| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 10/04/2001 | DE10054098A1 Semiconductor device with element-insulating insulation films, has stacked structure comprising semiconductor substrate, insulating layer, and semiconductor layer in given sequence |
| 10/04/2001 | DE10029501C1 Vertical field effect transistor made from a semiconductor wafer comprises a residual transistor consisting of a source region, a channel region, a drain region, and a moving gate structure made from the semiconductor material |
| 10/04/2001 | DE10014916A1 Adjusting threshold voltage of MOS transistor having a polycrystalline silicon gate comprises implanting germanium ions into gate to change electron affinity of gate |
| 10/04/2001 | DE10014384A1 Mittels Feldeffekt steuerbare Halbleiteranordnung mit lateral verlaufender Kanalzone Using field-effect-controllable semiconductor device having laterally extending channel zone |
| 10/04/2001 | DE10014269A1 Halbleiterbauelement zur Ansteuerung von Leistungshalbleiterschaltern Semiconductor device for actuating power semiconductor switches |
| 10/03/2001 | CN2452134Y Large current metal diode |
| 10/03/2001 | CN1315747A Semiconductor device |
| 10/03/2001 | CN1315746A Power semiconductor device |
| 10/02/2001 | US6297994 Single electron MOSFET memory device and method |
| 10/02/2001 | US6297987 Magnetoresistive spin-injection diode |
| 10/02/2001 | US6297700 RF power transistor having cascaded cells with phase matching between cells |
| 10/02/2001 | US6297686 Semiconductor integrated circuit for low-voltage high-speed operation |
| 10/02/2001 | US6297539 Zicronium or hafnium oxide doped with calcium, strontium, aluminum, lanthanum, yttrium, or scandium |
| 10/02/2001 | US6297538 Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate |
| 10/02/2001 | US6297536 Diode structure compatible with silicide processes for ESD protection |
| 10/02/2001 | US6297535 Transistor having a gate dielectric which is substantially resistant to drain-side hot carrier injection |
| 10/02/2001 | US6297534 Power semiconductor device |
| 10/02/2001 | US6297533 LDMOS structure with via grounded source |
| 10/02/2001 | US6297532 Semiconductor device and method of manufacturing the same |
| 10/02/2001 | US6297530 Self aligned channel implantation |
| 10/02/2001 | US6297529 Semiconductor device with multilayered gate structure |
| 10/02/2001 | US6297527 Platinum-rhodium alloy layer; random access memory |
| 10/02/2001 | US6297526 Process for producing barrier-free semiconductor memory configurations |
| 10/02/2001 | US6297523 Field effect transistors |
| 10/02/2001 | US6297521 Graded anti-reflective coating for IC lithography |
| 10/02/2001 | US6297519 TFT substrate with low contact resistance and damage resistant terminals |
| 10/02/2001 | US6297518 Active matrix display and electrooptical device |
| 10/02/2001 | US6297173 Process for forming a semiconductor device |
| 10/02/2001 | US6297161 Method for forming TFT array bus |
| 10/02/2001 | US6297135 Method for forming silicide regions on an integrated device |
| 10/02/2001 | US6297132 Process to control the lateral doping profile of an implanted channel region |
| 10/02/2001 | US6297119 Semiconductor device and its manufacture |
| 10/02/2001 | US6297118 Vertical bipolar semiconductor power transistor with an interdigitzed geometry, with optimization of the base-to-emitter potential difference |
| 10/02/2001 | US6297117 Formation of confined halo regions in field effect transistor |
| 10/02/2001 | US6297115 Cmos processs with low thermal budget |
| 10/02/2001 | US6297114 Semiconductor device and process and apparatus of fabricating the same |
| 10/02/2001 | US6297113 Method of manufacturing a semiconductor device, and a semiconductor device manufactured thereby |
| 10/02/2001 | US6297109 Method to form shallow junction transistors while eliminating shorts due to junction spiking |
| 10/02/2001 | US6297107 High dielectric constant materials as gate dielectrics |
| 10/02/2001 | US6297106 Transistors with low overlap capacitance |
| 10/02/2001 | US6297105 Method of forming asymmetric source/drain for a DRAM cell |
| 10/02/2001 | US6297104 Methods to produce asymmetric MOSFET devices |
| 10/02/2001 | US6297101 Method for producing an MOS transistor structure with elevated body conductivity |
| 10/02/2001 | US6297100 Method of manufacturing silicon carbide semiconductor device using active and inactive ion species |
| 10/02/2001 | US6297099 Method to free control tunneling oxide thickness on poly tip of flash |
| 10/02/2001 | US6297097 Method for forming a semiconductor memory device with increased coupling ratio |
| 10/02/2001 | US6297096 NROM fabrication method |
| 10/02/2001 | US6297095 Memory device that includes passivated nanoclusters and method for manufacture |
| 10/02/2001 | US6297094 Semiconductor device with salicide structure and fabrication method thereof |
| 10/02/2001 | US6297093 Method of making an electrically programmable memory cell |
| 10/02/2001 | US6297082 Method of fabricating a MOS transistor with local channel ion implantation regions |
| 10/02/2001 | US6297079 Method of electrically connecting IGBT transistor chips mounted on an integrated-circuit wafer |
| 10/02/2001 | US6297063 In-situ nano-interconnected circuit devices and method for making the same |
| 10/02/2001 | CA2109310C Blue-green laser diode |
| 09/27/2001 | WO2001071849A2 Reconfigurable antenna |
| 09/27/2001 | WO2001071819A2 Surface pin device |
| 09/27/2001 | WO2001071818A1 Metal source and drain mos transistor, and method for making same |
| 09/27/2001 | WO2001071817A2 Dmos transistor having a trench gate electrode and method of making the same |
| 09/27/2001 | WO2001071816A1 Ferroelectric fet with polycrystalline crystallographically oriented ferroelectric material |
| 09/27/2001 | WO2001071815A2 High voltage semiconductor device having a field plate arrangement |
| 09/27/2001 | WO2001071814A1 METHOD FOR PREPARING LOW-RESISTANT p-TYPE SrTiO¿3? |
| 09/27/2001 | WO2001071813A1 Multi color detector |
| 09/27/2001 | WO2001071812A1 Quantum dots infrared for optoelectronic devices |
| 09/27/2001 | WO2001071811A1 Multi-spectral quantum well infrared photodetectors |
| 09/27/2001 | WO2001071810A2 High voltage solid state device termination |
| 09/27/2001 | WO2001071804A2 Lateral asymmetric lightly doped drain mosfet |
| 09/27/2001 | WO2001071803A1 A dual spacer process for non-volatile memory devices |
| 09/27/2001 | WO2001071795A2 Method for forming high quality multiple thickness oxide layers by reducing descum induced defects |
| 09/27/2001 | WO2001071793A2 Method for forming high quality multiple thickness oxide layers by using high temperature descum |
| 09/27/2001 | WO2001071783A1 Method of manufacturing a transistor |
| 09/27/2001 | WO2001070625A2 Micromechanical component and balancing method |
| 09/27/2001 | US20010025367 Method for modeling diffusion of impurities in a semiconductor |
| 09/27/2001 | US20010025230 Electric Characteristic evaluating apparatus for a semiconductor device |
| 09/27/2001 | US20010024870 Fabrication process of a semiconductor integrated circuit device |
| 09/27/2001 | US20010024866 Method of manufacturing a transistor |
| 09/27/2001 | US20010024865 Method for manufacturing a thin-layer component, in particular a thin-layer high-pressure sensor |
| 09/27/2001 | US20010024863 Silicon-on-insulator chip having an isolation barrier for reliability |
| 09/27/2001 | US20010024860 Method for manufacturing a gate structure incorporating therein aluminum oxide as a gate dielectric |
| 09/27/2001 | US20010024859 Semiconductor integrated circuit device and a method of manufacturing thereof |
| 09/27/2001 | US20010024858 Method for producing a vertical MOS transistor |
| 09/27/2001 | US20010024856 Semiconductor device and fabrication method thereof |
| 09/27/2001 | US20010024853 High charge storage density integrated circuit capacitor |
| 09/27/2001 | US20010024851 Method of manufacturing insulating-gate semiconductor device |
| 09/27/2001 | US20010024850 Single-layer-electrode type two-phase charge coupled device having smooth charge transfer |
| 09/27/2001 | US20010024847 MOSFET device and manufacturing method |
| 09/27/2001 | US20010024846 Field effect transistor and fabrication process thereof |
| 09/27/2001 | US20010024845 Process of manufacturing a semiconductor device including a buried channel field effect transistor |
| 09/27/2001 | US20010024841 High density vertical sram cell using bipolar latchup induced by gated diode breakdown |
| 09/27/2001 | US20010024711 Micromechanical component with sealed membrane openings and method of fabricating a micromechanical component |
| 09/27/2001 | US20010024394 Split gate type flash memory |
| 09/27/2001 | US20010024391 Nonvolatile ferroelectric memory and its manufacturing method |
| 09/27/2001 | US20010024385 Code addressable memory cell in flash memory device |
| 09/27/2001 | US20010024247 Active matrix substrate and manufacturing method thereof |
| 09/27/2001 | US20010024185 Semiconductor display device |
| 09/27/2001 | US20010024138 Electronic switching device having at least two semiconductor components |
| 09/27/2001 | US20010023979 Method and system for dicing wafers, and semiconductor structures incorporating the products thereof |
| 09/27/2001 | US20010023973 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions |
| 09/27/2001 | US20010023967 Power semiconductor device having a protection circuit |
| 09/27/2001 | US20010023964 Group III nitride based FETs and hemts with reduced trapping and method for producing the same |
| 09/27/2001 | US20010023963 Semiconductor device with reverse conducting faculty |