| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 12/25/2001 | US6333229 Method for manufacturing a field effect transitor (FET) having mis-aligned-gate structure |
| 12/25/2001 | US6333228 Method to improve the control of bird's beak profile of poly in split gate flash |
| 12/25/2001 | US6333222 Semiconductor device and manufacturing method thereof |
| 12/25/2001 | US6333217 Method of forming MOSFET with channel, extension and pocket implants |
| 12/25/2001 | US6333214 Memory of multilevel quantum dot structure and method for fabricating the same |
| 12/25/2001 | US6333111 Method of producing layered aluminum fine particles and use thereof |
| 12/25/2001 | US6333110 For visualization of soft tissue, medical imaging, contrast agents, diagnostic agents |
| 12/20/2001 | WO2001097293A1 Floating gate transistor having buried strained silicon germanium channel layer |
| 12/20/2001 | WO2001097292A1 Vertical channel floating gate transistor having silicon germanium channel layer |
| 12/20/2001 | WO2001097291A1 Method for producing a field effect transistor having a floating gate |
| 12/20/2001 | WO2001097290A2 Buried inverted gate field-effect transistor (bigfet) |
| 12/20/2001 | WO2001097274A2 Heterostructure field effect transistor and method of manufacturing it |
| 12/20/2001 | WO2001097273A1 Silicon bipolar transistor, circuit arrangement and method for production of a silicon bipolar transistor |
| 12/20/2001 | WO2001097272A1 A method for producing a pn-junction |
| 12/20/2001 | WO2001097266A1 Method of manufacturing thin-film semiconductor device |
| 12/20/2001 | WO2001097258A2 Fast recovery diode and method for its manufacture |
| 12/20/2001 | WO2001097257A2 Dual metal gate transistors for cmos process |
| 12/20/2001 | WO2001096847A1 Nanostructure-based high energy capacity material |
| 12/20/2001 | WO2001061733A3 Double recessed transistor |
| 12/20/2001 | WO2001057915A3 Trenched schottky rectifiers |
| 12/20/2001 | WO2000075966A3 Dual epitaxial layer for high voltage vertical conduction power mosfet devices |
| 12/20/2001 | US20010053842 Aromatic resins; electronics; films |
| 12/20/2001 | US20010053740 Bismuth lanthanum titanate (BLT), BLT thin film, and electronic device including the BLT thin film |
| 12/20/2001 | US20010053613 Transistor and method of forming the same |
| 12/20/2001 | US20010053601 Method of manufacturing MIS semiconductor device that can control gate depletion and has low resistance gate electrode to which germanium is added |
| 12/20/2001 | US20010053594 High-k gate dielectric process with self aligned damascene contact to damascene gate and a low-k inter level dielectric |
| 12/20/2001 | US20010053589 Method of manufacturing an integrated edge structure for high voltage semiconductor devices, and related integrated edge structure |
| 12/20/2001 | US20010053584 Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor |
| 12/20/2001 | US20010053581 Ldmos device with self-aligned resurf region and method of fabrication |
| 12/20/2001 | US20010053579 Manufacturing method of semiconductor device |
| 12/20/2001 | US20010053570 Infiltrating solution of organic solvent into film and reflowing, etching exposed region using film as mask |
| 12/20/2001 | US20010053569 Process for fabricating a MOS transistor having two gates, one of which is buried and corresponding transistor |
| 12/20/2001 | US20010053568 Method for manufacturing a semiconductor component |
| 12/20/2001 | US20010053561 Insulated-gate semiconductor element and method for manufacturing the same |
| 12/20/2001 | US20010053057 Capacitor with conductively doped Si-Ge alloy electrode |
| 12/20/2001 | US20010053052 Magnetic sensor |
| 12/20/2001 | US20010052976 Scanning optical detection system |
| 12/20/2001 | US20010052951 Liquid crystal display device |
| 12/20/2001 | US20010052950 Semiconductor display device and manufacturing method thereof |
| 12/20/2001 | US20010052949 Liquid crystal display apparatus and manufacturing method for the same |
| 12/20/2001 | US20010052889 Liquid crystal display device and deficiency correcting method thereof |
| 12/20/2001 | US20010052820 High frequency power amplifier having a bipolar transistor |
| 12/20/2001 | US20010052788 Array substrate inspection method |
| 12/20/2001 | US20010052651 Driver circuits and methods for manufacturing driver circuits |
| 12/20/2001 | US20010052648 Semiconductor device and method of manufacturing the same |
| 12/20/2001 | US20010052634 Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improved |
| 12/20/2001 | US20010052631 Semiconductor device having active area with angled portion |
| 12/20/2001 | US20010052628 Semiconductor pressure sensor having strain gauge and circuit portion on semiconductor substrate |
| 12/20/2001 | US20010052621 PD-SOI substrate with suppressed floating body effect and method for its fabrication |
| 12/20/2001 | US20010052620 Semiconductor device, method of manufacturing the same and resistor |
| 12/20/2001 | US20010052618 Semiconductor device having a plurality of gate insulating films of different thicknesses, and method of manufacturing such semiconductor device |
| 12/20/2001 | US20010052617 Transistor and method of manufacturing the same |
| 12/20/2001 | US20010052616 Nonvolatile semiconductor storage apparatus and production method of the same |
| 12/20/2001 | US20010052615 Nonvolatile semiconductor memory device and process of production and write method thereof |
| 12/20/2001 | US20010052613 Soi semiconductor device and method for manufacturing the same |
| 12/20/2001 | US20010052609 Multilayer electrode for a ferroelectric capacitor |
| 12/20/2001 | US20010052608 Multilayer electrode for a ferroelectric capacitor |
| 12/20/2001 | US20010052607 Nonvolatile semiconductor memory |
| 12/20/2001 | US20010052601 Semiconductor device |
| 12/20/2001 | US20010052598 Display device and semiconductor device having laser annealed semiconductor elements |
| 12/20/2001 | US20010052597 Light-emitting matrix array display devices with light sensing elements |
| 12/20/2001 | US20010052596 Semiconducting devices and method of making thereof |
| 12/20/2001 | US20010052323 Method and apparatus for forming material layers from atomic gasses |
| 12/20/2001 | DE10128577A1 Semiconductor pressure sensor for e.g., as intake pressure sensor in vehicle engine intake, has semiconductor substrate, diaphragm portion, strain gauge, circuit portion, and local oxidation of silicon film |
| 12/20/2001 | DE10124822A1 Sensorvorrichtung und Sensorgerät Sensor device and sensor device |
| 12/20/2001 | DE10120295A1 Vapor deposition apparatus for producing stacked layer structure, includes first and second run lines, vent lines, and line-switching mechanism |
| 12/20/2001 | DE10064200A1 Nichtflüchtige Halbleiterspeichervorrichtung und integrierte Halbleiterschaltung A non-volatile semiconductor memory device and a semiconductor integrated circuit |
| 12/20/2001 | DE10064199A1 Halbleitervorrichtung Semiconductor device |
| 12/20/2001 | DE10062232A1 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation |
| 12/20/2001 | DE10026925A1 Feldeffektgesteuertes, vertikales Halbleiterbauelement Field-effect-controlled, vertical semiconductor component |
| 12/20/2001 | DE10026924A1 Kompensationsbauelement Compensation component |
| 12/20/2001 | DE10026740A1 Semiconducting switch element with integral Schottky diode has first connection electrode electrically connected to first connection zone and to Schottky barrier in second connection zone |
| 12/20/2001 | CA2412977A1 Nanostructure-based high energy capacity material |
| 12/19/2001 | EP1164643A2 Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof |
| 12/19/2001 | EP1164642A2 Semiconductor memory |
| 12/19/2001 | EP1164640A1 Semiconductor device and manufacture thereof |
| 12/19/2001 | EP1164636A2 Method to form self aligned, L-shaped sidewall spacers |
| 12/19/2001 | EP1164635A2 Thin film transistors and semiconductor device |
| 12/19/2001 | EP1164634A2 Method of manufacturing a field effect transistor |
| 12/19/2001 | EP1164630A2 Graded/stepped silicide process to improve MOS transistor |
| 12/19/2001 | EP1164378A1 Sensor |
| 12/19/2001 | EP1163700A1 High-voltage transistor with multi-layer conduction region |
| 12/19/2001 | EP1163699A1 Virtual-ground, split-gate flash memory cell arrangements |
| 12/19/2001 | EP1163697A1 Method of making a high-voltage transistor with multiple lateral conduction layers |
| 12/19/2001 | EP1163696A1 A LATERAL FIELD EFFECT TRANSISTOR OF SiC, A METHOD FOR PRODUCTION THEREOF AND A USE OF SUCH A TRANSISTOR |
| 12/19/2001 | EP1163695A1 Method of manufacturing a transistor |
| 12/19/2001 | EP0782770B1 Self-aligned field-effect transistor for high frequency applications |
| 12/19/2001 | EP0766909B1 Vertical interconnect process for silicon segments |
| 12/19/2001 | EP0727045B1 Self-addressable self-assembling microelectronic systems and devices for molecular biological analysis and diagnostics |
| 12/19/2001 | CN1327615A 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate |
| 12/19/2001 | CN1327610A Vacuum field-effect device and fabrication process thereof |
| 12/19/2001 | CN1327564A Modelling electrical characteristics of thin film transistors |
| 12/19/2001 | CN1327563A Semiconductor device simulation method and simulator |
| 12/19/2001 | CN1327271A Vertical MOS triode and its producing method |
| 12/19/2001 | CN1327269A Solid photographic device and its producing method |
| 12/19/2001 | CN1327261A Method for producing fuly self alignment film field effect transistor by improved technology window |
| 12/19/2001 | CN1327168A Liquid crystal display device and its producing method |
| 12/19/2001 | CN1327167A Liquid crystal display device and its fault correcting method |
| 12/19/2001 | CN1076520C Semiconductor device and its making method |
| 12/18/2001 | US6331953 Intelligent ramped gate and ramped drain erasure for non-volatile memory cells |