H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2001
11/15/2001	WO2001059821A8 A process for forming a semiconductor structure
11/15/2001	WO2001059820A8 Semiconductor structure
11/15/2001	WO2001047006B1 Tunnel nitride for improved polysilicon emitter
11/15/2001	US20010041971 Method of generating mesh and storage medium storing mesh generating program
11/15/2001	US20010041463 Electo-optical apparatus and method for fabricating a film, semiconductor device and memory device
11/15/2001	US20010041461 Process for forming high voltage junction termination extension oxide
11/15/2001	US20010041438 Semiconductor device and method of manufacturing the same
11/15/2001	US20010041435 Formation of micro rough poly surface for low sheet resistance salicided sub-quarter micron poly lines
11/15/2001	US20010041434 Method of manufacturing non-volatile semiconductor memory device storing charge in gate insulating layer therein
11/15/2001	US20010041427 Etching underlying gallium nitride layer on sapphire substrate to selectively expose sapphire substrate and define post and trench in underlying gallium nitride layer, and laterally growing sidewall of post into trench
11/15/2001	US20010041421 Prevents a hump phenomenon and an inverse narrow width effect of transistors by rounding the top edges of a trench and increasing the amount of oxidation at the top edges of a trench
11/15/2001	US20010041415 Methods of forming capacitors
11/15/2001	US20010041414 Active matrix type display circuit and method of manufacturing the same
11/15/2001	US20010041407 Trench-gate semiconductor devices
11/15/2001	US20010041400 Angle implant process for cellular deep trench sidewall doping
11/15/2001	US20010041399 Field-effect transistor structure with an insulated gate
11/15/2001	US20010041397 Semiconductor manufacturing method
11/15/2001	US20010041395 Planar substrate with patterned silicon-on- insulator region and self-aligned trench
11/15/2001	US20010041394 Photolithography system and a method for fabricating a thin film transistor array substrate using the same
11/15/2001	US20010041393 Process of forming a thick oxide field effect transistor
11/15/2001	US20010041392 Semiconductor device and manufacturing method thereof
11/15/2001	US20010041391 Polycrystal thin film forming method and forming system
11/15/2001	US20010041377 Method of manufacturing semiconductor device
11/15/2001	US20010041376 Semiconductor apparatus and method for producing it
11/15/2001	US20010041373 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures
11/15/2001	US20010041372 Method for fabricating ferroelectric field effect transistor
11/15/2001	US20010041250 Graded thin films
11/15/2001	US20010040831 Dual floating gate programmable read only memory cell structure and method for its fabrication and operation
11/15/2001	US20010040822 Nonvolatile semiconductor memory
11/15/2001	US20010040820 Memory using insulator traps
11/15/2001	US20010040663 Thin film transistor array substrate for a liquid crystal display and method for fabricating the same
11/15/2001	US20010040649 Manufacturing method of a liquid crystal display
11/15/2001	US20010040648 Liquid crystal display device and fabrication method thereof
11/15/2001	US20010040646 Liquid crystal display apparatus and production method thereof
11/15/2001	US20010040644 Bonded layer semiconductor device
11/15/2001	US20010040541 Semiconductor device having laser-annealed semiconductor device, display device and liquid crystal display device
11/15/2001	US20010040440 Motor driving circuit, a method for driving a motor, and a semiconductor integrated circuit device
11/15/2001	US20010040298 Method of mounting chip onto printed circuit board in shortened working time
11/15/2001	US20010040292 Semiconductor device having a contact plug formed by a dual epitaxial layer and method for fabricating the same
11/15/2001	US20010040273 Semiconductor device
11/15/2001	US20010040262 Semiconductor sensor chip, method of manufacturing the same, and semiconductor sensor having the same
11/15/2001	US20010040261 Integrated circuit wiring and fabricating method thereof
11/15/2001	US20010040257 Semiconductor device and manufacturing method thereof
11/15/2001	US20010040255 Electrode contact section of semiconductor device
11/15/2001	US20010040253 Semiconductor device and method of manufacturing the same
11/15/2001	US20010040252 Semiconductor device having nonvolatile memory and method of manufacturing thereof
11/15/2001	US20010040249 Ferroelectric capacitor
11/15/2001	US20010040248 Sensor having membrane structure and method for manufacturing the same
11/15/2001	US20010040247 Hetero-junction field effect transistor having an intermediate layer
11/15/2001	US20010040246 GaN field-effect transistor and method of manufacturing the same
11/15/2001	US20010040245 Semiconductor device and its manufacturing method
11/15/2001	US20010040244 Relaxed InGaAs buffers
11/15/2001	US20010040243 Semiconductor device with a diode, and method of manufacturing such a device
11/15/2001	DE10021907A1 Fuel cell system has fuel cell stack with integrated polarity inversion protection diode on or in end plate with cooling device in end plate near diode and in thermal contact with diode
11/15/2001	DE10021871A1 Verfahren zum Herstellen einer Barriereschicht in einem elektronischen Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements mit einer Barriereschicht A method for producing a barrier layer in an electronic device and method for fabricating an electronic device with a barrier layer
11/15/2001	DE10011885A1 Verfahren zur Herstellung eines Feldeffekttransistors mit Seitenwandoxidation A process for producing a field effect transistor with side wall oxidation
11/15/2001	CA2409583A1 Anode voltage sensor of a vertical power component and use for protecting against short circuits
11/15/2001	CA2408582A1 Silicon carbide metal-semiconductor field effect transistors and methods of fabricating silicon carbide metal-semiconductor field effect transistors
11/15/2001	CA2308133A1 Hexagonal microelectronic integrated circuit chip
11/14/2001	EP1154494A2 Porous semiconductor material
11/14/2001	EP1154493A2 Light-emitting semiconductor device having quantum dots
11/14/2001	EP1154491A1 Semiconductor device and manufacturing method thereof
11/14/2001	EP1154490A2 Semiconductor device with reduced parasitic bipolar transistor
11/14/2001	EP1154487A1 Semiconductor memory and method of driving semiconductor memory
11/14/2001	EP1154475A1 Semiconductor device and semiconductor device manufacturing method
11/14/2001	EP1154437A2 Low voltage flash EEPROM mmory cell with improved data retention
11/14/2001	EP1153980A1 Epoxy resin composition
11/14/2001	EP1153752A2 Semiconductor device, ink tank provided with such device and method of manufacturing such device
11/14/2001	EP1153438A2 Offset drain fermi-threshold field effect transistors
11/14/2001	EP1153437A1 Bipolar transistor and method for producing same
11/14/2001	EP1153435A1 Mos transistor with dynamic threshold voltage equipped with a current limiting device and method for making same
11/14/2001	EP1153434A1 Microelectronic device for storing information and method thereof
11/14/2001	EP1153428A1 Thin film transistor and method of manufacturing the same
11/14/2001	EP0731972B1 A capacitorless dram device on silicon-on-insulator substrate
11/14/2001	CN2459758Y Structure improved power diode
11/14/2001	CN1322379A Nonvolatile memory
11/14/2001	CN1322016A Silicon and germanium layer-contg. complementary metal oxide semiconductor device and substrate, and forming method thereof
11/13/2001	US6317364 Multi-state memory
11/13/2001	US6317363 Multi-state memory
11/13/2001	US6317360 Flash memory and methods of writing and erasing the same as well as a method of forming the same
11/13/2001	US6317175 Single crystal silicon arrayed devices with optical shield between transistor and substrate
11/13/2001	US6316915 Charge/discharge protection circuit and battery pack having the charge/discharge protection circuit
11/13/2001	US6316832 Moldless semiconductor device and photovoltaic device module making use of the same
11/13/2001	US6316827 Semiconductor device having improved temperature distribution
11/13/2001	US6316819 Multilayer ZnO polycrystalline diode
11/13/2001	US6316818 Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process
11/13/2001	US6316817 MeV implantation to form vertically modulated N+ buried layer in an NPN bipolar transistor
11/13/2001	US6316813 Semiconductor device with insulated gate transistor
11/13/2001	US6316810 Display switch with double layered gate insulation and resinous interlayer dielectric
11/13/2001	US6316809 Analog MOSFET devices
11/13/2001	US6316808 T-Gate transistor with improved SOI body contact structure
11/13/2001	US6316807 Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same
11/13/2001	US6316806 Trench transistor with a self-aligned source
11/13/2001	US6316798 Ferroelectric memory device and method for manufacturing the same
11/13/2001	US6316796 Single crystal silicon sensor with high aspect ratio and curvilinear structures
11/13/2001	US6316795 Silicon-carbon emitter for silicon-germanium heterojunction bipolar transistors
11/13/2001	US6316794 Lateral high voltage semiconductor device with protective silicon nitride film in voltage withstanding region
11/13/2001	US6316793 Nitride based transistors on semi-insulating silicon carbide substrates
11/13/2001	US6316791 Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure
11/13/2001	US6316790 Active matrix assembly with light blocking layer over channel region

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