H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2001
11/29/2001	US20010046742 Barrier in gate stack for improved gate dielectric integrity
11/29/2001	US20010046739 Semiconductor device with alternating conductivity type layer and method of manufacturing the same
11/29/2001	US20010046736 Method for manufacturing a buried gate
11/29/2001	US20010046732 Angled implant to improve high current operation of bipolar transistors
11/29/2001	US20010046731 Semiconductor device architectures including UV transmissive nitride layers
11/29/2001	US20010046729 Method of manufacturing a semiconductor device
11/29/2001	US20010046727 Method for fabricating a gate conductive structure
11/29/2001	US20010046695 Method of forming silicide
11/29/2001	US20010046639 Nonvolatile floating gate tunneling oxide(FLOTOX) transistor, using self-structured masks and a controlled etch to form nanometer scale microtip arrays, and atomic layer epitaxy to create tunnel oxide layer; high tunneling current
11/29/2001	US20010046164 Dual floating gate programmable read only memory cell structure and method for its fabrication and operation
11/29/2001	US20010046158 Semiconductor memory device and method of fabricating the same
11/29/2001	US20010046150 Symmetric architecture for memory cells having widely spread metal bit lines
11/29/2001	US20010046147 Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup
11/29/2001	US20010046024 Liguid crystal display device
11/29/2001	US20010046016 Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
11/29/2001	US20010046001 Liquid crystal display device
11/29/2001	US20010045996 Active matrix substrate and producing method of the same
11/29/2001	US20010045995 Liquid crystal display and manufacturing method therfor
11/29/2001	US20010045930 Display device of active matrix type
11/29/2001	US20010045854 Semiconductor integrated circuit and method of compensating for device performance variations of semiconductor integrated circuit
11/29/2001	US20010045798 Electroluminescent devices and displays with integrally fabricated address and logic devices fabricated by printing or weaving
11/29/2001	US20010045660 Semiconductor device and process for forming amorphous titanium silicon nitride on substrate
11/29/2001	US20010045635 Vertical conduction flip-chip device with bump contacts on single surface
11/29/2001	US20010045624 High-voltage silicon diode
11/29/2001	US20010045621 GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal
11/29/2001	US20010045619 Semiconductor device and method of manufacturing same
11/29/2001	US20010045612 Method of forming an insulating zone
11/29/2001	US20010045610 Micro-machined surface structure
11/29/2001	US20010045608 Transister with a buffer layer and raised source/drain regions
11/29/2001	US20010045607 A method of recessing spacers to improve salicides resistance on polysilicon gates
11/29/2001	US20010045606 Semiconductor device and method for fabricating the same
11/29/2001	US20010045605 Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same
11/29/2001	US20010045604 Semiconductor device and manufacturing method
11/29/2001	US20010045603 Hybrid circuit and electronic device using same
11/29/2001	US20010045602 A partially depleted soi based tft
11/29/2001	US20010045601 Semiconductor device and method of manufacturing thereof
11/29/2001	US20010045599 Semiconductor device
11/29/2001	US20010045598 Method of fabricating trench-gated power MOSFET
11/29/2001	US20010045597 Mis semiconductor device and method of fabricating the same
11/29/2001	US20010045596 Method and structure for textured surfaces in floating gate tunneling oxide devices
11/29/2001	US20010045595 Ferroelectric memory transistor with resistively coupled floating gate
11/29/2001	US20010045594 One time programmable read only memory
11/29/2001	US20010045593 Integrated circuit provided with a substrate and with a memory, transponder, and method of programming a memory
11/29/2001	US20010045592 Eeprom with erasing gate adjacent floating gate and control gate
11/29/2001	US20010045590 Nonvolatile semiconductor memory device and process for producing the same
11/29/2001	US20010045586 Method and device for improved salicide resistance on polysilicon gates
11/29/2001	US20010045585 Non-volatile semiconductor memory device and method of manufacturing the same
11/29/2001	US20010045582 Field-effect transistor based on embedded cluster structures and process for its production
11/29/2001	US20010045580 Image sensor with a photodiode array
11/29/2001	US20010045578 Semiconductor device
11/29/2001	US20010045577 Semiconductor energy detector
11/29/2001	US20010045567 Semiconductor component having field-shaping regions
11/29/2001	US20010045566 Semiconductor device and manufacturing method thereof
11/29/2001	US20010045563 Method for producing insulated gate thin film semiconductor device
11/29/2001	US20010045561 Nitride based semiconductor light emitting element
11/29/2001	US20010045559 Semiconductor device and method of fabricating the same
11/29/2001	US20010045558 Semiconductor device and a method of manufacturing the same
11/29/2001	US20010045127 Sensing device and sensor apparatus
11/29/2001	DE10119411A1 Self-aligning double gate MOSFET with separate gates has channel region, first gate above channel region, second gate below channel region; gates are electrically mutually isolated
11/29/2001	DE10025833A1 Halbleiterschichtsystem und Verfahren zur Herstellung von einem Halbleiterschichtsystem mit erhöhter Resistenz gegen thermische Prozessierung Semiconductor layer system and method for the production of a semiconductor layer system with an increased resistance to thermal processing
11/29/2001	DE10025264A1 Feldeffekt-Transistor auf der Basis von eingebetteten Clusterstrukturen und Verfahren zu seiner Herstellung Field-effect transistor based on the embedded cluster structures and process for its preparation
11/29/2001	DE10024876A1 Vertikaler Transistor Vertical transistor
11/29/2001	DE10024518A1 Integrated semiconductor switch used as a MOSFET has impurity atoms inserted in the transition region between the first connecting zone and the substrate zone to produce an ohmic resistance
11/29/2001	DE10024480A1 Compensation component with improved robustness has nested regions doped so point of maximum electric strength of field resulting from two perpendicular fields is displaced
11/29/2001	DE10023116A1 Feldeffekttransistor-Struktur mit isoliertem Gate Field effect transistor structure insulated gate
11/29/2001	DE10023115A1 Halbleiter-Leistungsbauelement mit reduziertem parasitärem Bipolartransistor Semiconductor power device with reduced parasitic bipolar transistor
11/29/2001	DE10004387A1 CMOS compatible lateral DMOS transistor has drift space region depleted of free charge carriers if drain voltage lower than gate isolator breakdown voltage
11/28/2001	EP1158584A2 Semiconductor device having semiconductor resistance element and fabrication method thereof
11/28/2001	EP1158583A1 Low on-resistance LDMOS
11/28/2001	EP1158582A1 Pin diode with insulated gate and manufacturing method thereof
11/28/2001	EP1158580A2 Method of crystallizing a silicon layer
11/28/2001	EP1158570A1 Vertical interconnect process for silicon segments
11/28/2001	EP1158524A1 Semiconductor memory device having a boosted voltage generating circuit
11/28/2001	EP1157431A1 A hybrid electrical device with biological components
11/28/2001	EP1157426A1 Semiconductor device
11/28/2001	EP1157425A1 Igbt with pn insulation
11/28/2001	EP1157424A1 Method for regulating the breakdown voltage of a thyristor
11/28/2001	EP1157419A1 Non-volatile memory cells and periphery
11/28/2001	EP1157417A1 A method of manufacturing a semiconductor device
11/28/2001	EP1157416A1 Method for a tungsten silicide etch
11/28/2001	EP1157414A1 Method of achieving higher inversion layer mobility in silicon carbide semiconductor devices
11/28/2001	EP1157412A1 Superior silicon carbide integrated circuits and method of fabricating
11/28/2001	EP0931338B1 Method of producing a mos transistor
11/28/2001	CN1324495A Method for producing transistors
11/28/2001	CN1324486A Semiconductor device
11/28/2001	CN1324113A Self-alignment dual gate metal oxide semi-conductor field-effect transistor having separating gate
11/28/2001	CN1324112A Circular structure of contact hole in multiple emitter area diffusion layer
11/28/2001	CN1324111A Semi-conductor device
11/28/2001	CN1075668C 绝缘栅双极晶体管 Insulated gate bipolar transistor
11/27/2001	US6324101 Storage method involving change of resistance state
11/27/2001	US6324100 Nonvolatile semiconductor memory device
11/27/2001	US6324099 2-bit/cell type nonvolatile semiconductor memory
11/27/2001	US6324095 Low voltage flash EEPROM memory cell with improved data retention
11/27/2001	US6323931 LCD with external circuit having anti-short-circuit pattern and particular structure
11/27/2001	US6323917 Thin film transistor for a liquid crystal display device and a fabrication process thereof
11/27/2001	US6323718 Normally-on bidirectional switch
11/27/2001	US6323717 Semiconductor device, drive method, and drive apparatus
11/27/2001	US6323561 Spacer formation for precise salicide formation
11/27/2001	US6323547 Pressure contact type semiconductor device with ringshaped gate terminal
11/27/2001	US6323539 High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

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