H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2001
12/05/2001	EP1160888A1 Hole transporting agents and photoelectric conversion device comprising the same
12/05/2001	EP1160874A2 Vertical semiconductor device driven by field effect
12/05/2001	EP1160873A1 MOS technology power device
12/05/2001	EP1160872A2 Trenched semiconductor device
12/05/2001	EP1160871A2 Charge compensation semiconductor device and method of making the same
12/05/2001	EP1160852A2 Method of fabricating a trenched semiconductor device
12/05/2001	EP1160851A2 Method for fabricating a multilayer semiconductor device
12/05/2001	EP1160850A2 Bipolar transistor and method for manufacturing same
12/05/2001	EP1160845A2 Method for fabricating a silicon carbide semiconductor device
12/05/2001	EP1160574A1 Capacitance-type external-force detecting device with improved sensitivity
12/05/2001	EP1159763A1 Multi-layer diodes and method of producing same
12/05/2001	EP1159762A1 Silicon carbide n-channel power lmosfet
12/05/2001	EP1159761A1 Nanostructure device and apparatus
12/05/2001	EP1159758A1 Flash memory cell having a flexible element
12/05/2001	EP1159757A1 Method and apparatus for elimination of parasitic bipolar action in complementary oxide semiconductor (cmos) silicon on insulator (soi) circuits
12/05/2001	EP1149409A4 Method for forming a silicide region on a silicon body
12/05/2001	EP0792525B1 A varicap diode and method of manufacturing a varicap diode
12/05/2001	EP0774167B1 A power semiconductor device
12/05/2001	CN1325560A Battery polarity insensitive integrated circuit amplifier
12/05/2001	CN1325549A Ferroelectric transistor, its use in storage cell system and its method of production
12/05/2001	CN1325548A Transistor array
12/05/2001	CN1325547A Semiconductor circuit
12/05/2001	CN1325544A Method for semiconductor manufacturing
12/05/2001	CN1075891C Monolithic acceleration transducer
12/05/2001	CN1075762C Preparation method of colour-variable film
12/04/2001	US6327211 Inverter having a variable threshold potential
12/04/2001	US6327187 EPROM and flash memory cells with source-side injection and a gate dielectric that traps hot electrons during programming
12/04/2001	US6327186 Non-volatile semiconductor memory including memory cells having different charge exchange capability
12/04/2001	US6327180 Semiconductor memory device for effecting erasing operation in block unit
12/04/2001	US6327179 Semiconductor memory device and method for producing same
12/04/2001	US6327172 Ferroelectric non-volatile memory device
12/04/2001	US6327015 Manufacturing method of display device
12/04/2001	US6327006 TFT-LCD having shielding layers on TFT-substrate
12/04/2001	US6326936 Electrode means, comprising polymer materials, with or without functional elements and an electrode device formed of said means
12/04/2001	US6326698 Semiconductor devices having protective layers thereon through which contact pads are exposed and stereolithographic methods of fabricating such semiconductor devices
12/04/2001	US6326681 Semiconductor device
12/04/2001	US6326674 Integrated injection logic devices including injection regions and tub or sink regions
12/04/2001	US6326670 Semiconductor device and method for manufacturing the same
12/04/2001	US6326667 Semiconductor devices and methods for producing semiconductor devices
12/04/2001	US6326665 Semiconductor device with insulating films
12/04/2001	US6326664 Transistor with ultra shallow tip and method of fabrication
12/04/2001	US6326661 Semiconductor device
12/04/2001	US6326656 Lateral high-voltage transistor
12/04/2001	US6326650 Method of forming a semiconductor structure
12/04/2001	US6326648 Power switch with a controlled DI/DT
12/04/2001	US6326647 Packaging and mounting of spherical semiconductor devices
12/04/2001	US6326642 Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
12/04/2001	US6326640 Organic thin film transistor with enhanced carrier mobility
12/04/2001	US6326316 Method of manufacturing semiconductor devices
12/04/2001	US6326315 Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same
12/04/2001	US6326311 Microstructure producing method capable of controlling growth position of minute particle or thin and semiconductor device employing the microstructure
12/04/2001	US6326308 Method for manufacturing semiconductor storage element
12/04/2001	US6326294 Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices
12/04/2001	US6326292 Semiconductor component and manufacturing method for semiconductor component
12/04/2001	US6326291 Fabrication of a wide metal silicide on a narrow polysilicon gate structure
12/04/2001	US6326290 Low resistance self aligned extended gate structure utilizing A T or Y shaped gate structure for high performance deep submicron FET
12/04/2001	US6326284 Semiconductor device and production thereof
12/04/2001	US6326273 Method of fabricating a field effect transistor with trapezoidal shaped gate dielectric and/or gate electrode
12/04/2001	US6326272 Method for forming self-aligned elevated transistor
12/04/2001	US6326271 Asymmetric MOS technology power device
12/04/2001	US6326267 Method of forming non-volatile semiconductor memory
12/04/2001	US6326265 Device with embedded flash and EEPROM memories
12/04/2001	US6326264 Semiconductor device and method for manufacturing same
12/04/2001	US6326263 Method of fabricating a flash memory cell
12/04/2001	US6326253 Method for fabricating semiconductor device including MIS and bipolar transistors
12/04/2001	US6326252 Method for fabricating MOS transistor having dual gate
12/04/2001	US6326251 Method of making salicidation of source and drain regions with metal gate MOSFET
12/04/2001	US6326249 Semiconductor device and process for producing same
12/04/2001	US6326246 Method for manufacturing thin film transistor
12/04/2001	US6326236 Semiconductor light-emitting device and manufacturing method thereof
12/04/2001	US6326221 Methods for manufacturing field emitter arrays on a silicon-on-insulator wafer
12/04/2001	US6326216 Process for producing semiconductor integrated circuit device
12/04/2001	US6325606 Apparatus for filling a gap between spaced layers of a semiconductor
12/04/2001	US6325017 Apparatus for forming a high dielectric film
12/04/2001	US6324904 Miniature pump-through sensor modules
11/2001
11/29/2001	WO2001091277A1 Reduced load switching device and method
11/29/2001	WO2001091192A1 A thin film field effect transistor
11/29/2001	WO2001091191A1 Semiconductor device
11/29/2001	WO2001091190A1 A semiconductor device
11/29/2001	WO2001091189A1 Field effect device
11/29/2001	WO2001091188A2 Semiconductor structures for hemt
11/29/2001	WO2001091187A1 A semiconductor device
11/29/2001	WO2001091186A2 Semiconductor multilayer system and a method for producing a semiconductor multilayer system with increased resistance to thermal processing
11/29/2001	WO2001091172A2 A semiconductor device and a method for forming patterns
11/29/2001	WO2001091168A1 Bottom anti-reflective coating using rapid thermal anneal with oxidizing gas
11/29/2001	WO2001091162A2 Bipolar transistor and method of manufacture thereof
11/29/2001	WO2001091155A1 Quantum size effect type micro electron gun and flat display unit using it and method for manufacturing the same
11/29/2001	WO2001037348A8 Type ii interband heterostructure backward diodes
11/29/2001	US20010046788 Method for fabricating thin insulating films, a semiconductor device and a method for fabricating a semiconductor device
11/29/2001	US20010046775 Method for forming semiconductor device to prevent electric field concentration from being generated at corner of active region
11/29/2001	US20010046766 Semiconductor devices and methods for manufacturing the same
11/29/2001	US20010046765 Method for producing a barrier layer in an electronic component and method for producing an electronic component with a barrier layer
11/29/2001	US20010046762 Method for manufacturing semiconductor device having trench filled with polysilicon
11/29/2001	US20010046761 Method of fabricating contact pads of a semiconductor device
11/29/2001	US20010046760 Transistor having improved gate structure
11/29/2001	US20010046759 Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor
11/29/2001	US20010046757 Method for fabricating semiconductor device
11/29/2001	US20010046755 By uniformly arranging vias around the bump on an integrated circuit, current can uniformly flow to and from the bump, effectively leading to reduced current density around the bump.
11/29/2001	US20010046747 Heterojunction bipolar transistor and manufacturing method therefor
11/29/2001	US20010046745 Forming p-type halo surrounding n+ bitline diffusion region allows normally implanted channel doping concentration to be greatly reduced, thus achieving improved array threshold voltage control without increased node diffusion leakage

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