H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2001
12/18/2001	US6331727 Semiconductor device and method of fabricating the same
12/18/2001	US6331726 SOI voltage dependent negative-saturation-resistance resistor ballasting element for ESD protection of receivers and driver circuitry
12/18/2001	US6331724 Single transistor E2prom memory device with controlled erasing
12/18/2001	US6331723 Active matrix display device having at least two transistors having LDD region in one pixel
12/18/2001	US6331722 Hybrid circuit and electronic device using same
12/18/2001	US6331721 Memory cell with built in erasure feature
12/18/2001	US6331718 Thin film circuit with improved carrier mobility
12/18/2001	US6331717 Insulated gate semiconductor device and process for fabricating the same
12/18/2001	US6331716 Variable capacity device with quantum-wave interference layers
12/18/2001	US6331478 Methods for manufacturing semiconductor devices having chamfered metal silicide layers
12/18/2001	US6331476 Thin film transistor and producing method thereof
12/18/2001	US6331474 Defect compensation method for semiconductor element
12/18/2001	US6331469 Trench isolation structure, semiconductor device having the same, and trench isolation method
12/18/2001	US6331468 Formation of integrated circuit structure using one or more silicon layers for implantation and out-diffusion in formation of defect-free source/drain regions and also for subsequent formation of silicon nitride spacers
12/18/2001	US6331467 Method of manufacturing a trench gate field effect semiconductor device
12/18/2001	US6331466 Insulated gate semiconductor device and manufacturing method thereof
12/18/2001	US6331465 Alternate method and structure for improved floating gate tunneling devices using textured surface
12/18/2001	US6331463 Method for manufacturing low power high efficiency non-volatile erasable programmable memory cell structure
12/18/2001	US6331458 Active region implant methodology using indium to enhance short channel performance of a surface channel PMOS device
12/18/2001	US6331455 Power rectifier device and method of fabricating power rectifier devices
12/18/2001	US6331443 Method for manufacturing a liquid crystal display
12/18/2001	US6331356 Polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes, and blends
12/18/2001	US6331274 Advanced active circuits and devices for molecular biological analysis and diagnostics
12/18/2001	US6331238 Method of patterning a substrate with an atomic mask
12/13/2001	WO2001095399A1 Electrically inactive passivating layer for semiconductor devices
12/13/2001	WO2001095398A1 Power mosfet and method of making the same
12/13/2001	WO2001095397A1 Lateral semiconductor device with low on-resistance and method of making the same
12/13/2001	WO2001095396A2 Double-implant high performance varactor and method for manufacturing same
12/13/2001	WO2001095392A1 Damascene architecture electronic storage and method for making same
12/13/2001	WO2001095385A1 Method of making a power mosfet
12/13/2001	WO2001095384A1 A method of electronic component fabrication and an electronic component
12/13/2001	WO2001095383A1 Method for making an electronic component with self-aligned drain and gate, in damascene architecture
12/13/2001	WO2001095369A2 Halo-free non-rectifying contact on chip with halo source/drain diffusion
12/13/2001	WO2001093916A1 Purification of functionalized fluorescent nanocrystals
12/13/2001	WO2001039257A3 Silicon layer highly sensitive to oxygen and method for obtaining same
12/13/2001	WO2000004587A9 Nitride based transistors on semi-insulating silicon carbide substrates
12/13/2001	US20010051436 Fabrication method and structure for ferroelectric nonvolatile memory field effect transistor
12/13/2001	US20010051416 Semiconductor material and method for forming the same and thin film transistor
12/13/2001	US20010051412 Method of fabricating semiconductor device
12/13/2001	US20010051411 Manufacturing method of semiconductor device
12/13/2001	US20010051406 Fabrication of dram and other semiconductor devices with an insulating film using a wet rapid thermal oxidation process
12/13/2001	US20010051401 Production of a semiconductor device
12/13/2001	US20010051392 Semiconductor devices having protective layers thereon through which contact pads are exposed and stereolithographic methods of fabricating such semiconductor devices
12/13/2001	US20010051382 Method for fabricating epitaxial substrate
12/13/2001	US20010050835 Surge protection circuit for semiconductor devices
12/13/2001	US20010050799 Electro-optical device, method for making the same, and electronic apparatus
12/13/2001	US20010050730 Defect correcting method for liquid crystal panel
12/13/2001	US20010050549 Switch mode power supply with reduced switching losses
12/13/2001	US20010050421 Semiconductor apparatus
12/13/2001	US20010050415 Adjustable threshold isolation transistor
12/13/2001	US20010050406 Fuse programming circuit for programming fuses
12/13/2001	US20010050401 Insulated gate field effect semiconductor device and forming method thereof
12/13/2001	US20010050397 Semiconductor device and method of manufacturing the same
12/13/2001	US20010050396 Semiconductor device and method for fabricating the same
12/13/2001	US20010050395 Semiconductor device and method for fabricating the same
12/13/2001	US20010050394 Lateral super-junction semiconductor device
12/13/2001	US20010050393 GaAs MOSFET having low capacitance and on-resistance and method of manufacturing the same
12/13/2001	US20010050388 A dynamic-type semiconductor memory device
12/13/2001	US20010050387 Semiconductor non-volatile memory device and corresponding fabrication process
12/13/2001	US20010050383 Semiconductor device
12/13/2001	US20010050378 Semiconductor memory
12/13/2001	US20010050375 Semiconductor device
12/13/2001	US20010050374 Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof
12/13/2001	US20010050369 Edge termination for silicon power devices
12/13/2001	US20010050368 Liquid crystal display device array substrate and method of manufacturing the same
12/13/2001	US20010050365 Thin-film transistor and semiconductor device using thin-film transistors
12/13/2001	US20010050364 Semiconductor device and manufacturing method thereof
12/13/2001	US20010050349 Removal (oxy)nitride from surface of silicide semiconductor
12/13/2001	DE10032370C1 Carbon nanotube field effect transistor has two nanotubes spaced apart to prevent tunnel current between them
12/13/2001	DE10027914A1 Bauelement mit einem Transistor und Verfahren zu dessen Herstellung Component having a transistor and method for its production
12/13/2001	DE10026742A1 Two-way blocking semiconductor switch with control and two load terminals
12/13/2001	DE10019813A1 Avalanche resistant semiconductor component with body of one conductivity and surface zone of other conductivity
12/12/2001	EP1162744A1 Semiconductor integrated circuit device operating with low power consumption
12/12/2001	EP1162665A2 Trench gate MIS device and method of fabricating the same
12/12/2001	EP1162664A1 Lateral semiconductor device with low on-resistance and method of making the same
12/12/2001	EP1162657A2 Method of fabricating a one transistor memory with MOCVD metal oxide layers
12/12/2001	EP1161771A1 Silicon carbide lmosfet with gate break-down protection
12/12/2001	EP1161769A1 Method of manufacturing a semiconductor device comprising semiconductor elements formed in a top layer of a silicon wafer situated on a buried insulating layer
12/12/2001	EP1161767A2 Method for producing a body area for a vertical mos transistor array with reduced specific starting resistor
12/12/2001	EP0847593B1 Method of producing an eeprom semiconductor structure
12/12/2001	EP0834194B1 Semiconductor device fabrication
12/12/2001	CN1326231A Hole transferring agent and photoelectric conversing device containing it
12/12/2001	CN1326229A Transistor with high electron mobility and its preparing process
12/12/2001	CN1326228A High-frequency high-speed semiconductor device with wide range of safety operation
12/12/2001	CN1326227A Metal inter-connector and active matrix bottom therewith
12/12/2001	CN1325795A Ink container with semiconductor device, ink jet recorder and device, use and manufacture thereof
12/12/2001	CN1076124C Power amplifier circuit
12/12/2001	CN1076123C Semiconductor device equipped with antifuse elements and a method for manufacturing an fpga
12/11/2001	US6330191 Semiconductor storage device and production method thereof
12/11/2001	US6330189 Nonvolatile semiconductor memory device
12/11/2001	US6330187 Nonvolatile memory device and method for manufacturing the same
12/11/2001	US6330184 Method of operating a semiconductor device
12/11/2001	US6330165 Semiconductor device
12/11/2001	US6330044 Apparatus for providing light shielding in a liquid crystal display
12/11/2001	US6330042 Liquid crystal display and the method of manufacturing the same
12/11/2001	US6329716 Contact electrode for N-type gallium nitride-based compound semiconductor and method for forming the same
12/11/2001	US6329714 Hybrid S.C. devices and method of manufacture thereof
12/11/2001	US6329711 Semiconductor device and mounting structure
12/11/2001	US6329699 Bipolar transistor with trenched-groove isolation regions
12/11/2001	US6329698 Forming a self-aligned epitaxial base bipolar transistor

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