| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 12/11/2001 | US6329696 Semiconductor device with electric converter element |
| 12/11/2001 | US6329692 Circuit and method for reducing parasitic bipolar effects during eletrostatic discharges |
| 12/11/2001 | US6329688 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 12/11/2001 | US6329687 Two bit flash cell with two floating gate regions |
| 12/11/2001 | US6329685 Self aligned method of forming a semiconductor memory array of floating gate memory cells and a memory array made thereby |
| 12/11/2001 | US6329677 Field effect transistor |
| 12/11/2001 | US6329675 Self-aligned bipolar junction silicon carbide transistors |
| 12/11/2001 | US6329673 Liquid-crystal display apparatus, transistor, and display apparatus |
| 12/11/2001 | US6329672 Thin film transistor having a second gate metal layer preventing formation of hillocks |
| 12/11/2001 | US6329300 Method for manufacturing conductive pattern layer by two-step wet etching process |
| 12/11/2001 | US6329276 Method of forming self-aligned silicide in semiconductor device |
| 12/11/2001 | US6329275 Target formed by sputtering and a second element of carbon, oxygen, nitrogen and hydrogen |
| 12/11/2001 | US6329273 Solid-source doping for source/drain to eliminate implant damage |
| 12/11/2001 | US6329271 Self-aligned channel implantation |
| 12/11/2001 | US6329270 Laser annealed microcrystalline film and method for same |
| 12/11/2001 | US6329269 Semiconductor device manufacturing with amorphous film cyrstallization using wet oxygen |
| 12/11/2001 | US6329262 Method for producing semiconductor integrated circuit |
| 12/11/2001 | US6329259 Collector-up RF power transistor |
| 12/11/2001 | US6329258 Semiconductor device and method of manufacturing the same |
| 12/11/2001 | US6329257 Method for laterally peaked source doping profiles for better erase control in flash memory devices |
| 12/11/2001 | US6329253 Thick oxide MOS device used in ESD protection circuit |
| 12/11/2001 | US6329248 Method for making split gate flash memory cells with high coupling efficiency |
| 12/11/2001 | US6329247 Nonvolatile semiconductor memory device and manufacturing method thereof |
| 12/11/2001 | US6329246 Method for fabricating flash memory |
| 12/11/2001 | US6329232 Method of manufacturing a semiconductor device |
| 12/11/2001 | US6329231 Distributed constant circuit with active element |
| 12/11/2001 | US6329230 High-speed compound semiconductor device having an improved gate structure |
| 12/11/2001 | US6329225 Tight pitch gate devices with enlarged contact areas for deep source and drain terminals and method |
| 12/11/2001 | US6329219 Method of processing a semiconductor device |
| 12/11/2001 | US6329214 Manufacture of field emission device |
| 12/11/2001 | US6329124 Method to produce high density memory cells and small spaces by using nitride spacer |
| 12/11/2001 | US6329088 Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00> |
| 12/11/2001 | US6328904 Manufacture of a field emission element with fined emitter electrode |
| 12/11/2001 | US6327859 Pre-equilibrium chemical reaction energy converter |
| 12/06/2001 | WO2001093384A1 Single photon source based on transmitters with selectively distributed frequencies |
| 12/06/2001 | WO2001093343A2 Nanostructured thermoelectric materials and devices |
| 12/06/2001 | WO2001093339A1 Misfet |
| 12/06/2001 | WO2001093338A1 Buried channel strained silicon fet using an ion implanted doped layer |
| 12/06/2001 | WO2001093337A1 Bipolar transistor |
| 12/06/2001 | WO2001093336A1 Semiconductor device and method for manufacturing the same |
| 12/06/2001 | WO2001093335A1 Component with a transistor and method for production thereof |
| 12/06/2001 | WO2001092896A1 Acceleration switch |
| 12/06/2001 | WO2001092428A1 Heterostructure with rear-face donor doping |
| 12/06/2001 | WO2001092369A1 Method of preparing a polymer, method of preparing a compound, compounds, polymers, and method of manufacturing an electronic device |
| 12/06/2001 | WO2001054167A3 Silicon/germanium bipolar transistor with an optimized germanium profile |
| 12/06/2001 | WO2001053887A3 An active matrix electro-optic display |
| 12/06/2001 | WO2001050534A3 Qubit using a josephson junction between s-wave and d-wave superconductors |
| 12/06/2001 | WO2001047044A3 Forming interconnects |
| 12/06/2001 | WO2001045142A3 Lateral insulated-gate bipolar transistor (ligbt) device in silicon-on-insulator (soi) technology |
| 12/06/2001 | WO2001041194A3 Semiconductor circuit arrangement and a method for producing same |
| 12/06/2001 | WO2001041187A3 Semiconductor circuit arrangement and a method for producing same |
| 12/06/2001 | WO2001027981A3 Indium-enhanced bipolar transistor |
| 12/06/2001 | WO2001024251A3 Manufacture of trench-gate semiconductor devices |
| 12/06/2001 | US20010049197 Method of fabricating a light emitting device |
| 12/06/2001 | US20010049194 Patent withdrawn after electronic o.g. published |
| 12/06/2001 | US20010049186 Method for establishing ultra-thin gate insulator using anneal in ammonia |
| 12/06/2001 | US20010049180 Surface pin device |
| 12/06/2001 | US20010049173 Methods of forming field effect transistors and related field effect transistor constructions |
| 12/06/2001 | US20010049169 Semiconductor memory and its manufacturing method |
| 12/06/2001 | US20010049167 Method of manufacturing a trench mosfet using selective growth epitaxy |
| 12/06/2001 | US20010049166 Method of manufacturing an electrically programmable, non-volatile memory and high-performance logic circuitry in the same semiconductor chip |
| 12/06/2001 | US20010049165 MOS transistors having dual gates and self-aligned interconnect contact windows |
| 12/06/2001 | US20010049164 One-time UV-programmable non-volatile semiconductor memory and method of programming such a semiconductor memory |
| 12/06/2001 | US20010049163 Semiconductor device and method for producing it |
| 12/06/2001 | US20010049155 Semiconductor device using substrate having cubic structure and method of manufacturing the same |
| 12/06/2001 | US20010049151 Method for manufacturing semiconductor device capable of improving manufacturing yield |
| 12/06/2001 | US20010049064 Radiation transparent substrate; sheild pattern |
| 12/06/2001 | US20010049029 Process control |
| 12/06/2001 | US20010048612 Array of flash memory cells and data program and erase methods of the same |
| 12/06/2001 | US20010048609 Nonvolatile semiconductor memory device having testing capabilities |
| 12/06/2001 | US20010048499 Liquid crystal displaying apparatus and method for manufacturing array substrate used therefor |
| 12/06/2001 | US20010048494 Liquid crystal display with light shielding film |
| 12/06/2001 | US20010048491 Color liquid crystal display device and manufacturing method of the same |
| 12/06/2001 | US20010048490 Liquid crystal display device and method for manufacturing the same |
| 12/06/2001 | US20010048337 Diode element circuit and switch circuit using the same |
| 12/06/2001 | US20010048144 Compensation component and process for producing the compensation component |
| 12/06/2001 | US20010048142 Semiconductor substrate and method for manufacturing semiconductor device using the same |
| 12/06/2001 | US20010048134 Bipolar junction transistors having trench-based base electrodes |
| 12/06/2001 | US20010048133 Low on-resistance LDMOS |
| 12/06/2001 | US20010048132 Semiconductor device and manufacturing method of the same |
| 12/06/2001 | US20010048131 Semiconductor device |
| 12/06/2001 | US20010048130 Semiconductor device |
| 12/06/2001 | US20010048129 Semiconductor memory device and method of manufacturing the same |
| 12/06/2001 | US20010048128 Semiconductor element and semiconductor memory device using the same |
| 12/06/2001 | US20010048124 Solid-state image pickup device and a method of producing the same |
| 12/06/2001 | US20010048122 Semiconductor device |
| 12/06/2001 | US20010048120 Heterojunction bipolar transistor composed of emitter layer which includes orderly structured layer and disorderly structured layer |
| 12/06/2001 | US20010048119 Semiconductor device and method of manufacturing the same |
| 12/06/2001 | US20010048117 Differential negative resistance element and process for fabricating the same |
| 12/06/2001 | US20010048112 Semiconductor light-emitting device and manufacturing method thereof |
| 12/06/2001 | US20010048109 Electro-optical device, method for fabricating the same, and electronic apparatus |
| 12/06/2001 | US20010048108 Thin-film semiconductor integrated circuit device and picture display device with using thereof and manufacturing method thereof |
| 12/06/2001 | US20010048107 Thin film transistor and method of manufacturing the same |
| 12/06/2001 | US20010048106 Electronic device and method of driving the same |
| 12/06/2001 | US20010047687 Gyroscope and input unit using the same |
| 12/06/2001 | EP1145299A3 Manufacture of trench-gate semiconductor devices |
| 12/06/2001 | DE10125339A1 Semiconductor device used as a bipolar transistor comprises a silicon substrate, a first silicon film, a silicon-germanium, a second silicon film, a third silicon film, and electrodes |
| 12/06/2001 | DE10058737A1 Programming flash memory module such as EEPROM by removing electrons caught in insulating layer but not in floating gate electrode of memory cells |
| 12/06/2001 | DE10025567A1 Production of deep-doped regions of one conductivity type in a semiconductor body with conductivity of the opposite type comprises inserting protons or hydrogen atoms in the direction of the current flow between the electrodes |
| 12/06/2001 | DE10024859A1 Schaltungsanordnung zum entlasteten Schalten Circuitry for switching relieved |