Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2003
01/09/2003WO2003003423A1 Topside active optical device apparatus and method
01/09/2003WO2003003377A2 Low-voltage and interface damage-free polymer memory device
01/09/2003WO2002089190A3 Method for minimizing tungsten oxide evaporation during selective sidewall oxidation of tungsten-silicon gates
01/09/2003WO2002084743A8 Metal insulator power semiconductor component (mis) and a method for producing the same
01/09/2003WO2002069373A3 Gallium nitride material based semiconductor devices including thermally conductive regions
01/09/2003WO2002031875A3 Dielectric interface films and methods therefor
01/09/2003WO2002029898A3 Reset transistor for cmos imagers
01/09/2003WO2002012115A3 Methods for reducing the curvature in boron-doped silicon micromachined structures
01/09/2003WO2001057927A9 Silicon nanoparticle field effect transistor and transistor memory device
01/09/2003US20030008523 Method for forming insulating film and for manufacturing integrated circuit
01/09/2003US20030008515 Method of fabricating a vertical MOS transistor
01/09/2003US20030008514 Piezoresistive device and manufacturing processes of this device
01/09/2003US20030008496 Method for making an electronic component with self-aligned drain and gate, in damascene architecture
01/09/2003US20030008488 Method for manufacturing non-volatile semiconductor memory and non-volatile semiconductor memory manufactured thereby
01/09/2003US20030008487 MOS transistors and methods for manufacturing the same
01/09/2003US20030008486 Method of fabricating a MOS transistor with a drain extension and corresponding transistor
01/09/2003US20030008484 Angled implant process
01/09/2003US20030008483 Distance between diode and well resistor of device is shortened to achieve high integration without degradation in insulating characteristics
01/09/2003US20030008472 Semiconductor device and fabrication process thereof
01/09/2003US20030008466 Semiconductor device and method of fabricating the same
01/09/2003US20030008464 Method for forming shallow retrograde wells in semiconductor device and shallow retrograde wells formed thereby
01/09/2003US20030008462 Insulated gate field effect transistor and manufacturing thereof
01/09/2003US20030008461 Flash memory with ultra thin vertical body transistors
01/09/2003US20030008460 Trench mosfet having implanted drain-drift region
01/09/2003US20030008459 Method of manufacturing semiconductor device and flash memory
01/09/2003US20030008458 Semiconductor integrated circuit device and method of producing the same
01/09/2003US20030008457 Semiconductor device and process for same
01/09/2003US20030008452 Semiconductor device and its fabrication method
01/09/2003US20030008451 Contactless channel write/erase flash memory cell and its fabrication method
01/09/2003US20030008445 MOSgated device with trench structure and remote contact and process for its manufacture
01/09/2003US20030008444 Protected against leakage of doped impurity to channel region; threshold voltage and electrical reliability
01/09/2003US20030008442 Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor
01/09/2003US20030008440 GaInP epitaxial stacking structure and fabrication method thereof and a FET transistor using this structure
01/09/2003US20030008439 Method of manufacturing a semiconductor device
01/09/2003US20030008438 Method of forming a field effect transistor
01/09/2003US20030008437 Method of separating thin film device, method of transferring thin film device, thin film device, active matrix substrate and liquid crystal display device
01/09/2003US20030008436 Active matrix substrate and manufacturing method thereof
01/09/2003US20030007387 CG-WL voltage boosting scheme for twin MONOS
01/09/2003US20030007106 Method for manufacturing active matrix type liquid crystal display device
01/09/2003US20030006508 Electronic device including stacked microchips
01/09/2003US20030006507 Semiconductor device and method of manufacturing the same
01/09/2003US20030006504 Contact structure, method of forming the same, semiconductor device, and method of manufacturing the same
01/09/2003US20030006503 Device having resin package and method of producing the same
01/09/2003US20030006497 Semiconductor device
01/09/2003US20030006493 Semiconductor device and manufacturing method thereof
01/09/2003US20030006487 Semiconductor device having element isolation structure
01/09/2003US20030006486 Silicon-germanium bipolar transistor with optimized germanium profile
01/09/2003US20030006485 Bipolar transistor
01/09/2003US20030006484 Bipolar transistor and method manufacture thereof
01/09/2003US20030006483 Short channel power MOSFET with increased breakdown voltage
01/09/2003US20030006482 MOS integrated circuit with reduced on resistance
01/09/2003US20030006475 Nonvolatile memory device with reduced floating gate and increased coupling ratio and manufacturing method thereof
01/09/2003US20030006473 Power diode having improved on resistance and breakdown voltage
01/09/2003US20030006472 Method of manufacturing a schottky device
01/09/2003US20030006471 Semiconductor device having silicon carbide layer of predetermined conductivity type and module device having the same
01/09/2003US20030006467 Lateral MOS power transistor
01/09/2003US20030006464 Layout configurable electrostatic discharge device for integrated circuits
01/09/2003US20030006463 Protection transistor with improved edge structure
01/09/2003US20030006462 Vertical source/drain contact semiconductor
01/09/2003US20030006461 Integrated circuit device
01/09/2003US20030006460 Semiconductor device formed on a single semiconductor substrate having semiconductor elements operated at a predetermined voltage and a voltage lower than that
01/09/2003US20030006459 Method of controlling floating body effects in an asymmetrical SOI device
01/09/2003US20030006458 Semiconductor device
01/09/2003US20030006457 MIS semiconductor device and method of fabricating the same
01/09/2003US20030006456 Semiconductor device and manufacturing method thereof
01/09/2003US20030006455 Semiconductor devices having group III-V compound layers
01/09/2003US20030006454 Trench MOSFET having implanted drain-drift region and process for manufacturing the same
01/09/2003US20030006453 Power MOSFET having enhanced breakdown voltage
01/09/2003US20030006452 Trench structure for semiconductor devices
01/09/2003US20030006451 Structure of flash memory
01/09/2003US20030006450 Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structure
01/09/2003US20030006449 Semiconductor device comprising a non-volatile memory
01/09/2003US20030006446 Memory address and decode circuits with ultra thin body transistors
01/09/2003US20030006445 Semiconductor memory reducing current consumption and narrow channel effect and method of manufacturing the same
01/09/2003US20030006442 Semiconductor device and manufacture thereof
01/09/2003US20030006438 Semiconductor device with function of modulating gain coefficient and semiconductor integrated circuit including the same
01/09/2003US20030006437 Field effect transistor
01/09/2003US20030006436 Radio frequency modules and modules for moving target detection
01/09/2003US20030006431 Integrated semiconductor DRAM-type memory device and corresponding fabrication process
01/09/2003US20030006428 Memory cell, memory cell arrangement and fabrication method
01/09/2003US20030006427 Thin film crystal wafer with pn-junction and its manufacturing process
01/09/2003US20030006426 GaAs-based semiconductor field-effect transistor
01/09/2003US20030006425 Manufacturing process and termination structure for fast recovery diode
01/09/2003US20030006415 Semiconductor device
01/09/2003US20030006414 Semiconductor device and method for forming the same
01/09/2003US20030006410 Quantum wire gate device and method of making same
01/09/2003US20030006409 Nitride compound semiconductor element
01/09/2003US20030006407 Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit
01/09/2003US20030005774 Electrical capacitance presssure sensor having electrode with fixed area and manufacturing method thereof
01/09/2003CA2447364A1 Topside active optical device apparatus and method
01/08/2003EP1274135A1 GaAs-based semiconductor field-effect transistor
01/08/2003EP1274134A2 MOS transistor and its fabrication method
01/08/2003EP1274133A2 Thin-film crystal wafer having a pn junction and its manufacturing method
01/08/2003EP1274132A2 Semiconductor non volatile memory device and method of producing the same
01/08/2003EP1274131A1 Antistatic contact for a line in polycrystalline silicon
01/08/2003EP1274096A2 Control gate and word line voltage boosting scheme for twin MONOS memory cells
01/08/2003EP1274095A2 Twin MONOS cell array metal bitline organization and single cell operation
01/08/2003EP1274093A2 A control gate decoder for twin MONOS memory with two bit erase capability
01/08/2003EP1273961A2 Method for producing a liquid-crystal display apparatus
01/08/2003EP1273203A1 Method of manufacturing a membrane sensor