Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2003
03/05/2003EP1287551A1 A method of electronic component fabrication and an electronic component
03/05/2003EP1287549A1 An apparatus and a method for forming a pattern using a crystal structure of material
03/05/2003EP1287527A2 Programming of nonvolatile memory cells
03/05/2003EP1183555A4 Hydrophone assembly
03/05/2003EP1175628A4 Accelerometer transducer used for seismic recording
03/05/2003EP1169657A4 Calibration of sensors
03/05/2003EP0931187B1 A METHOD FOR PRODUCING A REGION DOPED WITH BORON IN A SiC-LAYER
03/05/2003CN1401141A Vertical conduction flip chip device with bump contacts on single surface
03/05/2003CN1401140A Dense arrays and charge storage devices, and methods for making same
03/05/2003CN1401135A Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same
03/05/2003CN1401134A Semiconductor layer doping, method, thin-film semiconductor device manufacturing method, andthin-film semiconductor device
03/05/2003CN1401080A Accelerometer
03/05/2003CN1400672A schottky-barrier diode and its manufacture
03/05/2003CN1400671A Schottky-barrier diode and its manufacture
03/05/2003CN1400670A Film transistor array base plate structure
03/05/2003CN1400669A Longitudinal transistor, memory device and longitudinal transistor making process
03/05/2003CN1400668A Metal oxide semiconductor and its formation method
03/05/2003CN1400667A Metal oxide semiconductor field-effect transistor
03/05/2003CN1400641A Manufacture of Schottky-barrier diode
03/05/2003CN1400640A Silicide full-automatic aligned chennel gate isolated gate bipolar transistor design and its preparation process
03/05/2003CN1400628A Semiconductor apparatus and its making process
03/04/2003US6529414 Nonvolatile semiconductor memory device including a circuit for providing a boosted potential
03/04/2003US6529407 Semiconductor device with improved latch arrangement
03/04/2003US6529258 Liquid crystal display device having wiring layer and semiconductor layer crossing each other
03/04/2003US6529251 Liquid crystal display device and method of manufacturing the same
03/04/2003US6529062 Power module
03/04/2003US6529059 Output stage ESD protection for an integrated circuit
03/04/2003US6529034 Integrated series schottky and FET to allow negative drain voltage
03/04/2003US6528896 Scalable two transistor memory device
03/04/2003US6528863 Integrated passive components
03/04/2003US6528862 Bipolar transistor with a box-type germanium profile that lies outside of the emitter-base depletion region
03/04/2003US6528861 High performance bipolar transistor architecture
03/04/2003US6528858 MOSFETs with differing gate dielectrics and method of formation
03/04/2003US6528856 High dielectric constant metal oxide gate dielectrics
03/04/2003US6528855 MOSFET having a low aspect ratio between the gate and the source/drain
03/04/2003US6528854 Semiconductor device having a thick oxide layer under gate side walls and method for manufacturing the same
03/04/2003US6528853 Method and semiconductor structure for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors
03/04/2003US6528852 Double gated electronic device and method of forming the same
03/04/2003US6528851 Post-silicidation implant for introducing recombination center in body of SOI MOSFET
03/04/2003US6528850 High voltage MOS transistor with up-retro well
03/04/2003US6528849 Dual-gate resurf superjunction lateral DMOSFET
03/04/2003US6528848 Semiconductor device and a method of manufacturing the same
03/04/2003US6528847 Metal oxide semiconductor device having contoured channel region and elevated source and drain regions
03/04/2003US6528846 Asymmetric high voltage silicon on insulator device design for input output circuits
03/04/2003US6528845 Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection
03/04/2003US6528844 Split-gate flash memory cell with a tip in the middle of the floating gate
03/04/2003US6528843 Self-aligned split-gate flash memory cell having a single-side tip-shaped floating-gate structure and its contactless flash memory arrays
03/04/2003US6528842 Electronically erasable memory cell using CMOS technology
03/04/2003US6528840 Semiconductor device
03/04/2003US6528830 Thin film transistor
03/04/2003US6528829 Integrated circuit structure having a charge injection barrier
03/04/2003US6528828 Differential negative resistance HBT and process for fabricating the same
03/04/2003US6528826 High breakdown voltage
03/04/2003US6528822 High display quality
03/04/2003US6528821 Optimized reachthrough implant for simultaneously forming an MOS capacitor
03/04/2003US6528820 Semiconductor device and method of fabricating same
03/04/2003US6528816 Integrated inorganic/organic complementary thin-film transistor circuit and a method for its production
03/04/2003US6528431 Method for fabricating semiconductor integrated circuit drive using an oxygen and hydrogen catalyst
03/04/2003US6528405 Enhancement mode RF device and fabrication method
03/04/2003US6528404 Semiconductor device and fabrication method thereof
03/04/2003US6528403 Fabrication process of a semiconductor integrated circuit device
03/04/2003US6528402 Dual salicidation process
03/04/2003US6528399 MOSFET transistor with short channel effect compensated by the gate material
03/04/2003US6528397 Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same
03/04/2003US6528396 Transistor and method of making the same
03/04/2003US6528393 Method of making a semiconductor package by dicing a wafer from the backside surface thereof
03/04/2003US6528388 Method for manufacturing semiconductor device and ultrathin semiconductor device
03/04/2003US6528381 Method of forming silicide
03/04/2003US6528379 Method for manufacturing semiconductor integrated circuit device
03/04/2003US6528378 Semiconductor device
03/04/2003US6528377 Semiconductor substrate and method for preparing the same
03/04/2003US6528376 Sacrificial spacer layer method for fabricating field effect transistor (FET) device
03/04/2003US6528375 Bipolar transistor compatible with CMOS utilizing tilted ion implanted base
03/04/2003US6528374 Method for forming dielectric stack without interfacial layer
03/04/2003US6528373 Layered dielectric on silicon carbide semiconductor structures
03/04/2003US6528370 Semiconductor device and method of manufacturing the same
03/04/2003US6528363 Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch
03/04/2003US6528362 Metal gate with CVD amorphous silicon layer for CMOS devices and method of making with a replacement gate process
03/04/2003US6528361 Process for preparing a polycrystalline silicon thin film
03/04/2003US6528360 Semiconductor device and process for manufacturing the same, and electronic device
03/04/2003US6528358 Semiconductor device and method for fabricating the same
03/04/2003US6528357 Method of manufacturing array substrate
03/04/2003US6528356 Manufacture of semiconductor capacitively-coupled NDR device for applications such as high-density high-speed memories and power switches
03/04/2003US6528355 Method for fabricating a trench MOS power transistor
03/04/2003US6528351 Integrated package and methods for making same
03/04/2003US6528340 Pressure transducer with composite diaphragm
03/04/2003US6527964 Methods and apparatuses for improved flow in performing fluidic self assembly
03/04/2003US6527961 Method of manufacturing pressure microsensors
03/04/2003US6527858 Comprising a single crystal of zinc oxide (ZnO) that contains a p-type dopant composed of nitrogen (N), and an n-type dopant composed of any one or more elements selected from boron, aluminum, gallium, and hydrogen
02/2003
02/27/2003WO2003017383A1 Semiconductor device and method of its manufacture
02/27/2003WO2003017374A2 Memory cell
02/27/2003WO2003017371A2 Integrated semiconductor circuit with a varactor
02/27/2003WO2003017349A2 Dmos transistor
02/27/2003WO2003017336A2 Dram trench capacitor and method of making the same
02/27/2003WO2003016209A1 Nanoscale electronic devices & fabrication methods
02/27/2003WO2002103802A3 Transistor with intentionally tensile mismatched base layer
02/27/2003WO2002101819A3 Leaky, thermally conductive insulator material (ltcim) in a semiconductor-on-insulator (soi) structure
02/27/2003WO2002092505A3 Nanotube array and method for producing a nanotube array
02/27/2003WO2002058157A3 Solid state imager arrangements
02/27/2003US20030040187 Method for fabricating semiconductor device
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