| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/29/2003 | CN1393935A Semiconductor device with small bag and its mfg. |
| 01/29/2003 | CN1393934A Flash memory structure |
| 01/29/2003 | CN1393933A 化合物半导体装置 The compound semiconductor device |
| 01/29/2003 | CN1100344C Method for mfg. semiconductor device |
| 01/28/2003 | US6512703 Nonvolatile semiconductor memory |
| 01/28/2003 | US6512700 Non-volatile memory cell having channel initiated secondary electron injection programming mechanism |
| 01/28/2003 | US6512699 Nonvolatile semiconductor memory device having a hierarchial bit line structure |
| 01/28/2003 | US6512567 Liquid crystal display device wherein gate terminal and drain terminal are formed by same layer of counter electrode |
| 01/28/2003 | US6512504 Electronic device and electronic apparatus |
| 01/28/2003 | US6512299 Semiconductor device and a manufacturing process therefor |
| 01/28/2003 | US6512296 Semiconductor structure having heterogenous silicide regions having titanium and molybdenum |
| 01/28/2003 | US6512282 Semiconductor device and method for fabricating the same |
| 01/28/2003 | US6512278 Stacked semiconductor integrated circuit device having an inter-electrode barrier to silicide formation |
| 01/28/2003 | US6512275 Apparatus including active device formed in substantially continuous mesa region of semiconductor material formed on one or more sides of isolation region, and conductive path formed in mesa region which extends in linear direction |
| 01/28/2003 | US6512274 CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same |
| 01/28/2003 | US6512272 Increased gate to body coupling and application to dram and dynamic circuits |
| 01/28/2003 | US6512271 Semiconductor device |
| 01/28/2003 | US6512270 Thin film transistor substrate and process for producing the same |
| 01/28/2003 | US6512269 High-voltage high-speed SOI MOSFET |
| 01/28/2003 | US6512268 Super-junction semiconductor device |
| 01/28/2003 | US6512267 Superjunction device with self compensated trench walls |
| 01/28/2003 | US6512266 Method of fabricating SiO2 spacers and annealing caps |
| 01/28/2003 | US6512265 Method of fabricating semiconductor device |
| 01/28/2003 | US6512264 Flash memory having pre-interpoly dielectric treatment layer and method of forming |
| 01/28/2003 | US6512263 Closely spaced rows of memory cells are electrically isolated from one another with trenches in substrate which are filled with dielectric; isolated source and drain memory cell diffusions are connected by bit lines formed above substrate |
| 01/28/2003 | US6512262 Non-volatile semiconductor memory device and method of manufacturing the same |
| 01/28/2003 | US6512258 Semiconductor device and method of manufacturing same |
| 01/28/2003 | US6512256 Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating same |
| 01/28/2003 | US6512254 Solid-state image pickup device |
| 01/28/2003 | US6512252 Semiconductor device |
| 01/28/2003 | US6512251 Semiconductor switching element that blocks in both directions |
| 01/28/2003 | US6512247 Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them |
| 01/28/2003 | US6512246 Thin film transistor |
| 01/28/2003 | US6512244 SOI device with structure for enhancing carrier recombination and method of fabricating same |
| 01/28/2003 | US6512242 Resonant-tunneling electronic transportors |
| 01/28/2003 | US6512241 Phase change material memory device |
| 01/28/2003 | US6511925 Process for forming high dielectric constant gate dielectric for integrated circuit structure |
| 01/28/2003 | US6511918 Method of structuring a metal-containing layer |
| 01/28/2003 | US6511913 Method for manufacturing a membrane |
| 01/28/2003 | US6511911 Metal gate stack with etch stop layer |
| 01/28/2003 | US6511900 Boron incorporated diffusion barrier material |
| 01/28/2003 | US6511886 Method for manufacturing trench-gate type power semiconductor device |
| 01/28/2003 | US6511885 Vertical MOS transistor and method of manufacturing the same |
| 01/28/2003 | US6511884 Method to form and/or isolate vertical transistors |
| 01/28/2003 | US6511881 Method for fabricating split gate flash memory cell |
| 01/28/2003 | US6511879 Interconnect line selectively isolated from an underlying contact plug |
| 01/28/2003 | US6511876 High mobility FETS using A1203 as a gate oxide |
| 01/28/2003 | US6511875 Method for making high K dielectric gate for semiconductor device |
| 01/28/2003 | US6511873 High-dielectric constant insulators for FEOL capacitors |
| 01/28/2003 | US6511872 Device having a high dielectric constant material and a method of manufacture thereof |
| 01/28/2003 | US6511871 Method of fabricating thin film transistor |
| 01/28/2003 | US6511870 Self-aligned LDD poly-Si thin-film transistor |
| 01/28/2003 | US6511869 Thin film transistors with self-aligned transparent pixel electrode |
| 01/28/2003 | US6511859 IC-compatible parylene MEMS technology and its application in integrated sensors |
| 01/28/2003 | US6511187 Method of fabricating a matrix display system |
| 01/28/2003 | US6510742 Sensor formed on silicon on insulator structure and having reduced power up drift |
| 01/23/2003 | WO2003007445A1 Semiconductor quantum dot⋅device |
| 01/23/2003 | WO2003007399A2 Low melting point polymer alignment |
| 01/23/2003 | WO2003007398A1 Progressive aligned deposition |
| 01/23/2003 | WO2003007397A2 Solution influenced alignment |
| 01/23/2003 | WO2003007396A2 Lamellar polymer architecture |
| 01/23/2003 | WO2003007385A1 Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes |
| 01/23/2003 | WO2003007384A2 Single-electron transistors and fabrication methods |
| 01/23/2003 | WO2003007383A2 Algan/gan hemts having a gate contact on a gan based cap segment and methods of fabricating same |
| 01/23/2003 | WO2003007381A2 Low voltage threshold dynamic biasing |
| 01/23/2003 | WO2003007380A1 Semiconductor apparatus with improved esd withstanding voltage |
| 01/23/2003 | WO2003007359A1 Method of improving gate activation by employing atomic oxygen oxidation |
| 01/23/2003 | WO2003007356A1 Manufacturing of a low-noise mos device |
| 01/23/2003 | WO2003007305A1 Semiconductor storage, mobile electronic device, and detachable storage |
| 01/23/2003 | WO2003007304A2 Magnetic memory unit and magnetic memory array |
| 01/23/2003 | WO2003007234A2 Information register |
| 01/23/2003 | WO2003007061A2 A method of forming a reflective electrode and a liquid crystal display device |
| 01/23/2003 | WO2003006702A1 Hafnium silicide target for gate oxide film formation and its production method |
| 01/23/2003 | WO2002095805A3 Laser parrering of devices |
| 01/23/2003 | WO2002061841A3 Partially silicide diode and method of manufacture |
| 01/23/2003 | WO2002058158A3 Field effect transistor with redued gate delay and method of fabricating the same |
| 01/23/2003 | WO2002045156A3 Cmos fabrication process utilizing special transistor orientation |
| 01/23/2003 | US20030017715 Composite gate dielectric layer |
| 01/23/2003 | US20030017689 Methods of forming a transistor gate |
| 01/23/2003 | US20030017683 Structure and method for fabricating heterojunction bipolar transistors and high electron mobility transistors utilizing the formation of a complaint substrates for materials used to form the same |
| 01/23/2003 | US20030017676 Operating method for a semiconductor component |
| 01/23/2003 | US20030017672 Nonvolatile memory device |
| 01/23/2003 | US20030017671 Non-volatile memory device and method for fabricating the same |
| 01/23/2003 | US20030017670 Method of manufacturing a semiconductor memory device with a gate dielectric stack |
| 01/23/2003 | US20030017660 GaAs MESFET having LDD and non-uniform P-well doping profiles |
| 01/23/2003 | US20030017659 Polysilicon film forming method |
| 01/23/2003 | US20030017656 Method for fabricating thin-film transistor |
| 01/23/2003 | US20030017644 Compound semiconductor device and manufacturing method thereof |
| 01/23/2003 | US20030017642 Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates |
| 01/23/2003 | US20030017639 High-dielectric constant insulators for FEOL capacitors |
| 01/23/2003 | US20030017422 Method for producing liquid crystal display apparatus |
| 01/23/2003 | US20030016566 Semiconductor device, microcomputer and flash memory |
| 01/23/2003 | US20030016561 Erasing method in non-volatile memory device |
| 01/23/2003 | US20030016479 Electrostatic discharge (ESD) protection circuit of silicon-controlled rectifier (SCR) structure operable at a low trigger voltage |
| 01/23/2003 | US20030016311 Liquid crystal display device |
| 01/23/2003 | US20030016310 Liquid crystal display device |
| 01/23/2003 | US20030016309 Array substrate for liquid crystal display device and manufacturing method of the same |
| 01/23/2003 | US20030016308 Thin film transistor substrate for liquid crystal display panel and manufacturing method thereof |
| 01/23/2003 | US20030016201 Active matrix display devices |
| 01/23/2003 | US20030016196 Thin film transistors suitable for use in flat panel displays |