Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2003
02/13/2003US20030031890 Angular substrates
02/13/2003US20030031214 Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
02/13/2003US20030031068 Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
02/13/2003US20030031054 Semiconductor memory device
02/13/2003US20030030768 Transflective type LCD and method manufacturing the same
02/13/2003US20030030689 Method of forming film pattern, device for forming film pattern, conductive film wiring, electro-optical device, electronic device, and non-contact card medium
02/13/2003US20030030616 Precharge circuit and image display device using the same
02/13/2003US20030030488 Trench bipolar transistor
02/13/2003US20030030145 Method of forming a highly integrated non-volatile semiconductor memory device
02/13/2003US20030030144 Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
02/13/2003US20030030128 Transistor configuration for a bandgap circuit
02/13/2003US20030030127 Bipolar transistor and method of manufacturing same
02/13/2003US20030030126 Bipolar transistor and manufacturing method therefor
02/13/2003US20030030123 Semiconductor memory device equipped with memory transistor and peripheral transistor and method of manufacturing the same
02/13/2003US20030030122 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions
02/13/2003US20030030120 Diode and method for manufacturing the same
02/13/2003US20030030117 Semiconductor device
02/13/2003US20030030116 Bipolar ESD protection structure
02/13/2003US20030030115 Semiconductor device and manufacturing method thereof
02/13/2003US20030030114 Semiconductor device and method for fabricating the same
02/13/2003US20030030113 Semiconductor device
02/13/2003US20030030112 Semiconductor device having pocket and manufacture thereof
02/13/2003US20030030109 Semiconductor device
02/13/2003US20030030108 Thin film transistor and method for manufacturing the same
02/13/2003US20030030105 Semiconductor device
02/13/2003US20030030104 Trench MIS device with graduated gate oxide layer
02/13/2003US20030030103 Structure of semiconductor device and method for manufacturing the same
02/13/2003US20030030102 MOS field effect transistor configuration
02/13/2003US20030030101 Semiconductor device and manufacturing method thereof
02/13/2003US20030030100 Non-volatile memory device and method for fabricating the same
02/13/2003US20030030099 Flash memory structure
02/13/2003US20030030097 Non-volatile memory device having floating trap type memory cell and method of forming the same
02/13/2003US20030030092 Trench MIS device with reduced gate-to-drain capacitance
02/13/2003US20030030091 Dynamic random access memory trench capacitors
02/13/2003US20030030089 Method of fabricating a semiconductor device with a trench isolation structure and semiconductor device
02/13/2003US20030030088 Semiconductor device with copper wiring connected to storage capacitor
02/13/2003US20030030087 Semiconductor memory device
02/13/2003US20030030084 Fabricating an embedded ferroelectric memory cell
02/13/2003US20030030082 Method of forming an ultra thin dielectric film and a semiconductor device incorporating the same
02/13/2003US20030030081 Semiconductor device
02/13/2003US20030030080 Polysilicon TFT with a self-aligned LDD structure
02/13/2003US20030030078 MOS transistor having aluminum nitrade gate structure and method of manufacturing same
02/13/2003US20030030077 Semiconductor device and method for manufacturing the same
02/13/2003US20030030070 Bipolar transistor
02/13/2003US20030030069 Apparatus and method for fabricating a high reverse voltage semiconductor device
02/13/2003US20030030058 Semiconductor device
02/13/2003US20030030054 Electrostatic discharge protection for pixellated electronic device
02/13/2003US20030030052 Crystalline silicon thin film semiconductor device, crystalline silicon thin film photovoltaic device, and process for producing crystalline silicon thin film semiconductor device
02/13/2003US20030030051 Superjunction device with improved avalanche capability and breakdown voltage
02/13/2003DE10132136C1 Halbleiterbauelement mit Ladungskompensationsstruktur sowie zugehöriges Herstellungsverfahren A semiconductor device having charge compensation structure and associated production method
02/13/2003DE10128326C1 Fabrication of trench capacitor for memory cell, by forming trench in substrate, providing lower capacitor electrode adjoining wall of trench in lower trench region, and providing storage dielectric and upper capacitor electrode
02/13/2003CA2455230A1 Coupled quantum dot and quantum well semiconductor device and method of making the same
02/12/2003EP1283551A2 Angular substrates
02/12/2003EP1283526A1 Metallisation of nucleic acids via metal nanoparticles produced ex-situ
02/12/2003EP1282935A2 Thermal diode for energy conversion
02/12/2003EP1282918A1 Charge carrier extracting transistor
02/12/2003EP1282917A1 Vertical transistor
02/12/2003EP1282915A2 Uniform bitline strapping of a non-volatile memory cell
02/12/2003EP1282380A2 Noninvasive optical determination of hemoglobin and hematocrit
02/12/2003EP0717749B1 Self-addressable self-assembling microelectronic systems and devices for molecular biological analysis and diagnostics
02/12/2003CN1397094A 双极型晶体管 Bipolar transistor
02/12/2003CN1397093A Flexible electronic device
02/12/2003CN1397092A Passive alignment using slanted wall pedestal
02/12/2003CN1397027A Method of forming electrodes or fixel electrodes and liquid crystal display device
02/12/2003CN1397004A Angular rate sensor
02/12/2003CN1396665A Process for preparing optical filter plate
02/12/2003CN1396664A Manufacturing method of semiconductor device
02/12/2003CN1396663A Bipolar insulated-gate transistor device, its preparing process and method for controlling its switching speed
02/12/2003CN1396661A Nonvolatile semiconductor device and its making method
02/12/2003CN1396660A Semiconductor integrated circuit device and its manufacturing method
02/12/2003CN1396656A Electrostatic discharge protective circuit and method of thin film transistor liquid crystal display
02/12/2003CN1396638A Method for dipositing high-dielectric constant material on chip using atomic layer diposition method
02/12/2003CN1396633A Making method of compound semiconductor
02/12/2003CN1396629A Polysilicon crystallization method, thin film transistor and manufacture method of liquid crystal display thereof
02/12/2003CN1396628A Method for making compound semiconductor device
02/12/2003CN1396626A Semiconductor device and making method thereof
02/12/2003CN1396487A Pattern forming method and method for producing liquid crystal display using the method
02/12/2003CN1396486A 液晶显示器设备 The liquid crystal display devices
02/12/2003CN1396317A Amorphous silicon crystallizing method
02/12/2003CN1101599C SRAM cell andm ethod of manufacturing the same
02/12/2003CN1101555C Transmission type liquid crystal display device and method for manufacturing the same
02/11/2003US6518700 Organic light-emitting devices
02/11/2003US6518676 Metal interconnections and active matrix substrate using the same
02/11/2003US6518645 SOI-type semiconductor device and method of forming the same
02/11/2003US6518642 Contact to passive device of a semiconductor circuit device, the passive device being, for example, a resistor, an inductor, a fuse or the like. Adjacent, spaced, elevated, so-called dummy pattern (shoulder) regions are formed under
02/11/2003US6518637 Cubic (zinc-blende) aluminum nitride
02/11/2003US6518636 Semiconductor MISFET
02/11/2003US6518635 Semiconductor device and manufacturing method thereof
02/11/2003US6518634 A method of forming a capacitor and transistor are disclosed. a substrate having a semiconductor material on a firstsurface is provided. A layer of strontium nitride is then deposited over the first surface and a gate electrode formed over the
02/11/2003US6518631 Multi-Thickness silicide device formed by succesive spacers
02/11/2003US6518630 Thin film transistor array substrate for liquid crystal display and method for fabricating same
02/11/2003US6518629 Semiconductor device and process for producing the device
02/11/2003US6518625 Semiconductor device
02/11/2003US6518624 Trench-gate power semiconductor device preventing latch-up and method for fabricating the same
02/11/2003US6518623 Semiconductor device having a buried-channel MOS structure
02/11/2003US6518622 Vertical replacement gate (VRG) MOSFET with a conductive layer adjacent a source/drain region and method of manufacture therefor
02/11/2003US6518621 Trench DMOS transistor having reduced punch-through
02/11/2003US6518620 EEPROM memory cell with increased dielectric integrity
02/11/2003US6518619 Virtual-ground, split-gate flash memory cell arrangements and method for producing same
02/11/2003US6518618 Integrated memory cell and method of fabrication