Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2003
03/25/2003US6537885 Transistor and method of manufacturing a transistor having a shallow junction formation using a two step EPI layer
03/25/2003US6537884 Semiconductor device and method of manufacturing the same including an offset-gate structure
03/25/2003US6537882 Method of fabricating a semiconductor device in which no side walls are formed adjacent the gates of the MOSFETs of the memory cell
03/25/2003US6537880 Method of fabricating a high density NAND stacked gate flash memory device having narrow pitch isolation and large capacitance between control and floating gates
03/25/2003US6537869 Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the same
03/25/2003US6537865 Semiconductor device and process of fabricating same
03/25/2003US6537864 Method of fabricating a thin film transistor using electromagnetic wave heating of an amorphous semiconductor film
03/25/2003US6537862 Method of forming semiconductor device having a GAA type transistor
03/25/2003US6537861 SOI transistor with body contact and method of forming same
03/25/2003US6537860 Method of fabricating power VLSI diode devices
03/25/2003US6537843 Thin film transistor and method of manufacturing the same
03/25/2003US6537838 Forming semiconductor structures including activated acceptors in buried p-type III-V layers
03/25/2003US6537513 Depositing such as gallium or aluminum buffer layer at a temperature below crystalization point; lower defects
03/25/2003US6537369 SiGeC semiconductor crystal and production method thereof
03/25/2003US6537361 Method of the synthesis and control of PGO spin-coating precursor solutions
03/25/2003US6536282 Sensor, composed of a multilayer substrate, having a spring element that is delineated out of a semiconductor layer
03/20/2003WO2003023877A2 Surface modifying layers for organic thin film transistors
03/20/2003WO2003023871A2 Method for producing a device for direct thermoelectric energy conversion
03/20/2003WO2003023870A1 Large area silicon carbide devices and manufacturing methods therefor
03/20/2003WO2003023866A1 Thin film semiconductor device and method for fabricating the same
03/20/2003WO2003023865A1 Semiconductor device and its manufacturing method
03/20/2003WO2003023864A1 Production method for semiconductor device
03/20/2003WO2003023863A2 Trench-gate semiconductor devices and their manufacture
03/20/2003WO2003023862A1 Edge termination in a trench-gate mosfet
03/20/2003WO2003023861A2 Edge termination in mos transistors
03/20/2003WO2003023860A1 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods
03/20/2003WO2003023859A1 Bi-layer silicon film and method of fabrication
03/20/2003WO2003023838A1 n ELECTRODE FOR III GROUP NITRIDE BASED COMPOUND SEMICONDUCTOR ELEMENT
03/20/2003WO2003023837A1 ELECTRODE FOR p-TYPE SiC
03/20/2003WO2002080235A3 A method for fabrication of a high capacitance interpoly dielectric
03/20/2003US20030055618 Process variable identification method, process variable identification apparatus, and evaluation sample
03/20/2003US20030054669 Amorphous metal oxide gate dielectric structure and method thereof
03/20/2003US20030054665 Method of reducing boron outgassing at trench power IC's oxidation process for sacrificial oxide layer
03/20/2003US20030054663 Synthesis of layers, coatings or films using collection layer
03/20/2003US20030054653 Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same
03/20/2003US20030054624 Quantum dot of single electron memory device and method for fabricating thereof
03/20/2003US20030054615 Switching field effect transistor using abrupt metal-insulator transition
03/20/2003US20030054613 Semiconductor device and method of manufacturing thereof
03/20/2003US20030054611 Method of fabricating a split-gate semiconductor device
03/20/2003US20030054610 Method of manufacturing semiconductor device
03/20/2003US20030054609 Methods of writing/erasing of nonvolatile semiconductor storage device
03/20/2003US20030054601 Lateral heterojunction bipolar transistor and method of fabricating the same
03/20/2003US20030054599 Bipolar transistor, semiconductor device and method of manufacturing same
03/20/2003US20030054598 Method of fabricating a high-voltage transistor
03/20/2003US20030054597 Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate
03/20/2003US20030054595 Semiconductor device and method for manufacturing the same
03/20/2003US20030054594 Method of manufacturing a semiconductor integrated circuit
03/20/2003US20030054593 Thin film semiconductor device containing polycrystalline Si-Ge alloy and method for producing thereof
03/20/2003US20030054585 Solid-state imaging device and method for manufacturing same
03/20/2003US20030054572 Method of manufacturing ferroelectric substance thin film and ferroelectric memory using the ferroelectric substance thin film
03/20/2003US20030053345 Nonvolatile semiconductor storage device and production method therefor
03/20/2003US20030053334 Selective operation of a multi-state non-volatile memory system in a a binary mode
03/20/2003US20030053006 Thin film transistor array panel
03/20/2003US20030052721 Bipolar junction transistor compatible with vertical replacement gate transistors
03/20/2003US20030052417 Semiconductor device
03/20/2003US20030052406 Optimized buried-channel FETs based on SiGe heterostructures
03/20/2003US20030052389 Semiconductor device including a capacitance
03/20/2003US20030052388 Varactor having improved Q-factor and method of fabricating the same using SiGe heterojunction bipolar transistor
03/20/2003US20030052387 Bipolar transistor
03/20/2003US20030052386 An interlayer dielectric film covering the resistor layer has first and second embedded plugs providing the interconnection to reduce in temperature rise in resistor elements
03/20/2003US20030052383 Power semiconductor rectifier with ring-shaped trenches
03/20/2003US20030052380 Optical device carrier
03/20/2003US20030052378 Semiconductor device and method of manufacturing the same
03/20/2003US20030052377 Method of composite gate formation
03/20/2003US20030052376 Semiconductor device with high-k dielectric layer and method for manufacturing the same
03/20/2003US20030052375 Semiconductor device and method of manufacturing the same
03/20/2003US20030052374 Semiconductor device and method for fabricating the same
03/20/2003US20030052373 Field effect transistor formed on an insulating substrate and integrated circuit thereof
03/20/2003US20030052368 Input protection circuit
03/20/2003US20030052366 Semiconductor device and method of manufacturing same
03/20/2003US20030052365 Structure and fabrication method for capacitors integratible with vertical replacement gate transistors
03/20/2003US20030052364 Vertical dual gate field effect transistor
03/20/2003US20030052363 Non-volatile semiconductor memory with single layer gate structure
03/20/2003US20030052362 Semiconductor device
03/20/2003US20030052361 Triple self-aligned split-gate non-volatile memory device
03/20/2003US20030052360 EEPROM with split gate source side injection with sidewall spacers
03/20/2003US20030052359 Flash memory device and method for fabricating the same
03/20/2003US20030052350 Semiconductor device and method of manufacturing
03/20/2003US20030052348 Semiconductor device
03/20/2003US20030052347 Method of reducing the extrinsic body resistance in a silicon-on-insulator body contacted MOSFET
03/20/2003US20030052345 Semiconductor apparatus capable of preventing occurrence of multiple reflection, driving method, and setting method thereof
03/20/2003US20030052342 Method for forming a pattern and a semiconductor device
03/20/2003US20030052338 Dielectric layer for semiconductor device having less current leakage and increased capacitance
03/20/2003US20030052337 Thin film transistor and method for fabricating same
03/20/2003US20030052336 Electro-optical device and electronic equipment
03/20/2003US20030052335 Metal-insulator-metal capacitor and a method for producing same
03/20/2003US20030052334 Structure and method for a high-speed semiconductor device
03/20/2003US20030052333 Field effect transistor structure with self-aligned raised source/drain extensions
03/20/2003US20030052332 ESD protection circuit having a high triggering threshold
03/20/2003US20030052329 Semiconductor device
03/20/2003US20030052328 Group III nitride compound semiconductor light-emitting element
03/20/2003US20030052325 Semiconductor device
03/20/2003US20030052321 Polysilicon fet built on silicon carbide diode substrate
03/20/2003US20030052317 Quantum circuit device and method for quantum operation
03/20/2003US20030051905 Method of mounting electronic component on substrate without generation of voids in bonding material
03/20/2003US20030051657 Vacancy, dominated, defect-free silicon
03/20/2003CA2459336A1 Large area silicon carbide devices and manufacturing methods therefor
03/20/2003CA2458274A1 Method for producing a device for direct thermoelectric energy conversion
03/19/2003EP1294026A2 Method for adjusting ultra-thin SOI MOS transistor threshold voltages
03/19/2003EP1294025A2 Scr electrostatic discharge protection for integrated circuits
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