| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 02/06/2003 | US20030025153 Semiconductor device and method for fabricating the same |
| 02/06/2003 | US20030025152 Field-effect controlled semiconductor component and method of manufacturing a field-effect controlled semiconductor component |
| 02/06/2003 | US20030025151 EEPROM memory cell and method of forming the same |
| 02/06/2003 | US20030025150 Non-volatile semiconductor memory device |
| 02/06/2003 | US20030025149 Semiconductor device |
| 02/06/2003 | US20030025148 Structure of a flash memory |
| 02/06/2003 | US20030025145 Semiconductor device and method for fabricating the same |
| 02/06/2003 | US20030025138 Three-dimensional island pixel photo-sensor |
| 02/06/2003 | US20030025137 Method for manufacturing a semiconductor device having self-aligned contacts |
| 02/06/2003 | US20030025136 Integral-type liquid crystal panel with image sensor function |
| 02/06/2003 | US20030025135 Semiconductor device and method of manufacturing same |
| 02/06/2003 | US20030025134 Predominantly <100> polycrystalline silicon thin film transistor |
| 02/06/2003 | US20030025133 Methods of fabricating single electron transistors in which the thickness of an insulating layer defines spacing between electrodes |
| 02/06/2003 | US20030025131 Formation of planar strained layers |
| 02/06/2003 | US20030025128 Low emitter resistance contacts to GaAs high speed HBT |
| 02/06/2003 | US20030025127 Thin film transistor device and method of manufacturing the same |
| 02/06/2003 | US20030025126 Ultra-thin SOI MOS transistors |
| 02/06/2003 | US20030025125 Lateral operation bipolar transistor and a corresponding fabrication process |
| 02/06/2003 | US20030025124 Circuit configuration for load-relieved switching |
| 02/06/2003 | US20030025122 Semiconductor integrated circuit |
| 02/06/2003 | US20030025119 LCD device with optimized channel characteristics |
| 02/06/2003 | US20030025118 Light emitting device, semiconductor device, and method of fabricating the devices |
| 02/06/2003 | US20030025115 III nitride compound semiconductor device |
| 02/06/2003 | US20030025114 Semiconductor device and method for fabricating the same |
| 02/06/2003 | US20030025113 Semiconductor structures having reduced contact resistance |
| 02/06/2003 | CA2452281A1 Electronic device using carbon nanotubes |
| 02/05/2003 | EP1282189A1 Semiconductor layer, solar cell using it, and production methods and applications therefor |
| 02/05/2003 | EP1282173A2 Field effect transistor and method of manufacturing the same as well as liquid crystal display using the same as well as method of manufacturing the same |
| 02/05/2003 | EP1282172A2 Bipolar semiconductor device and method for fabrication thereof |
| 02/05/2003 | EP1282164A2 Method to improve the adhesion of dielectric layers to copper |
| 02/05/2003 | EP1282160A1 Process for forming nitride-oxide dielectric layers |
| 02/05/2003 | EP1282158A1 Method of manufacturing a bipolar transistor in an integrated CMOS circuit |
| 02/05/2003 | EP1282135A2 Sector protection circuit and method for flash memory devices |
| 02/05/2003 | EP1281204A1 One-time uv-programmable non-volatile semiconductor memory and method of programming such a semiconductor memory |
| 02/05/2003 | EP1281200A2 Method of making a semiconductor device having a recessed insulating layer of varying thickness |
| 02/05/2003 | EP1281179A1 Semiconductor device |
| 02/05/2003 | EP1216397A4 Microfabricated tuning fork gyroscope and associated three-axis inertial measurement system to sense out-of-plane rotation |
| 02/05/2003 | EP0965133A4 Nonvolatile pmos two transistor memory cell and array |
| 02/05/2003 | CN1395747A Dual bit multi-level ballistic MONOS memory, and manufacturing method, programming, and operation process for memory |
| 02/05/2003 | CN1395746A Semiconductor device and its manufacturing method |
| 02/05/2003 | CN1395745A Silicon/germanium bipolar transistor with optimized germanium profile |
| 02/05/2003 | CN1395322A Method for manufacturing nitride semiconductor and method for making semiconductor device |
| 02/05/2003 | CN1395319A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/05/2003 | CN1395318A Electronic device with non-luminous display |
| 02/05/2003 | CN1395317A Electronic device with non-luminous display |
| 02/05/2003 | CN1395316A Semiconductor device and its manufacturing method |
| 02/05/2003 | CN1395315A Semiconductor and manufacturing method thereof |
| 02/05/2003 | CN1395314A Method for manufacturing semiconductor device and semiconductor device |
| 02/05/2003 | CN1395306A Semiconductor storage device and its manufacturing method |
| 02/05/2003 | CN1395299A Forming method for silicide film of semiconductor element |
| 02/05/2003 | CN1395292A Semiconductor device and method for manufacturing semiconductor device |
| 02/05/2003 | CN1395287A Semiconductor film, its forming mehtod and method for manufacturing semiconductor |
| 02/05/2003 | CN1395286A Method for manufacturing semiconductor |
| 02/05/2003 | CN1101078C Pin二极管可变衰减器 Pin diode variable attenuator |
| 02/05/2003 | CN1101059C Method for mfg. of semiconductor device |
| 02/04/2003 | US6515912 Semiconductor device |
| 02/04/2003 | US6515905 Nonvolatile semiconductor memory device having testing capabilities |
| 02/04/2003 | US6515902 Method and apparatus for boosting bitlines for low VCC read |
| 02/04/2003 | US6515839 Electronic discharge protection system for mixed voltage application specific circuit design |
| 02/04/2003 | US6515719 Liquid crystal display apparatus and manufacturing method for the same |
| 02/04/2003 | US6515534 Enhanced conductivity body biased PMOS driver |
| 02/04/2003 | US6515511 Semiconductor integrated circuit and semiconductor integrated circuit device |
| 02/04/2003 | US6515415 Triode carbon nanotube field emission display using barrier rib structure and manufacturing method thereof |
| 02/04/2003 | US6515349 Semiconductor device and process for the same |
| 02/04/2003 | US6515348 Semiconductor device with FET MESA structure and vertical contact electrodes |
| 02/04/2003 | US6515346 Microbar and method of its making |
| 02/04/2003 | US6515340 Separation and active region, gate oxide film; electrode coupled to source and drain region |
| 02/04/2003 | US6515339 Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method |
| 02/04/2003 | US6515338 Semiconductor device and manufacturing method therefor |
| 02/04/2003 | US6515336 Thin film transistors having tapered gate electrode and taped insulating film |
| 02/04/2003 | US6515334 Hybrid circuit and electronic device using same |
| 02/04/2003 | US6515333 Removal of heat from SOI device |
| 02/04/2003 | US6515332 Insulated-gate field-effect semiconductor device |
| 02/04/2003 | US6515330 Power device having vertical current path with enhanced pinch-off for current limiting |
| 02/04/2003 | US6515329 Flash memory device and method of making same |
| 02/04/2003 | US6515327 A memory cell and a method for making the same are provided. The trench capacitor includes a vertical trench formed in a semiconductor, a doping region formed around a low portion of the trench, a collar isolation layer formed on an inner |
| 02/04/2003 | US6515326 Semiconductor memory device and method of fabricating the same |
| 02/04/2003 | US6515325 Methods for making the same. An embodiment of the semiconductor devices comprises a vertical transistor/capacitor cell including a nanotube. The device includes a vertical transistor and a capacitor cell both using |
| 02/04/2003 | US6515323 Ferroelectric memory device having improved ferroelectric characteristics |
| 02/04/2003 | US6515322 Silicon substrate, a gate electrode formed through a gate insulator film on a principal surface of the semiconductor substrate, a pair of source/drain regions formed in a principal surface region of the semiconductor substrate to |
| 02/04/2003 | US6515320 Semiconductor device and method of manufacturing the same including thicker insulating layer on lower part of electrode |
| 02/04/2003 | US6515319 Field-effect-controlled transistor and method for fabricating the transistor |
| 02/04/2003 | US6515318 Charge transfer device |
| 02/04/2003 | US6515317 Sidewall charge-coupled device with multiple trenches in multiple wells |
| 02/04/2003 | US6515316 Partially relaxed channel HEMT device |
| 02/04/2003 | US6515302 Power devices in wide bandgap semiconductor |
| 02/04/2003 | US6515300 Method of making a TFT array with photo-imageable insulating layer over address lines |
| 02/04/2003 | US6515299 Semiconductor device with rod like crystals and a recessed insulation layer |
| 02/04/2003 | US6514883 Method of fabricating semiconductor device |
| 02/04/2003 | US6514879 Configuration of various chemical compound generators coupled to a furnace provides the environment for formation of thin oxides of silicon on a wafer; forming steam from dichloroethylene, oxygen and hydrogen |
| 02/04/2003 | US6514859 Method of salicide formation with a double gate silicide |
| 02/04/2003 | US6514843 Method of enhanced oxidation of MOS transistor gate corners |
| 02/04/2003 | US6514842 Low resistance gate flash memory |
| 02/04/2003 | US6514839 ESD implantation method in deep-submicron CMOS technology for high-voltage-tolerant applications with light-doping concentrations |
| 02/04/2003 | US6514832 Gunn diode, NRD guide Gunn oscillator, fabricating method of Gunn diode and structure for assembly of the same |
| 02/04/2003 | US6514829 Method of fabricating abrupt source/drain junctions |
| 02/04/2003 | US6514828 Method of fabricating a highly reliable gate oxide |
| 02/04/2003 | US6514827 Method for fabricating a dual metal gate for a semiconductor device |
| 02/04/2003 | US6514826 Method of forming a gate electrode in a semiconductor device |
| 02/04/2003 | US6514825 Technique for reducing 1/f noise in MOSFETs |