Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2003
04/08/2003US6545327 Semiconductor device having different gate insulating films with different amount of carbon
04/08/2003US6545326 Method of fabricating semiconductor device
04/08/2003US6545324 Dual metal gate transistors for CMOS process
04/08/2003US6545323 Multilayer; semiconductor substrate, overcoating with dielectric, transistors; barrier, intake, drain zones
04/08/2003US6545322 Semiconductor protection device
04/08/2003US6545320 Electro-optical device and semiconductor device
04/08/2003US6545319 Thin film transistors
04/08/2003US6545318 Semiconductor device and manufacturing method thereof
04/08/2003US6545317 Semiconductor device having a gate electrode with a sidewall insulating film and manufacturing method thereof
04/08/2003US6545316 MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same
04/08/2003US6545315 Trench DMOS transistor having reduced punch-through
04/08/2003US6545314 Insulator traps for charge storage
04/08/2003US6545312 Nonvolatile semiconductor memory device and method for fabricating the same
04/08/2003US6545304 Solid-state image pickup device
04/08/2003US6545301 Solid-state image sensor and manufacturing method therefor
04/08/2003US6545300 Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby
04/08/2003US6545298 Compound semiconductor rectifier device structure
04/08/2003US6545297 High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown
04/08/2003US6545295 Transistor having ammonia free nitride between its gate electrode and gate insulation layers
04/08/2003US6545294 Electronic apparatus having semiconductor device including plurality of transistors formed on a polycrystalline layered structure in which the number of crystal grains in each polycrystalline layer is gradually reduced from lower to upper layer
04/08/2003US6545293 Thin film transistor flat display
04/08/2003US6545291 Transistor design for use in the construction of an electronically driven display
04/08/2003US6544908 Ammonia gas passivation on nitride encapsulated devices
04/08/2003US6544906 High dielectric constant (high-k) gate dielectric layer; ambient of hydrogen and an oxidizing gas prevents or reduces formation of lower dielectric constant (lower-k) material between the high-k gate dielectric and substrate
04/08/2003US6544900 In situ dielectric stacks
04/08/2003US6544876 Titanium boride gate electrode and interconnect and methods regarding same
04/08/2003US6544875 Chemical vapor deposition of silicate high dielectric constant materials
04/08/2003US6544873 Methods of fabricating integrated circuit field effect transistors including multilayer gate electrodes having narrow and wide conductive layers
04/08/2003US6544857 Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method
04/08/2003US6544854 Silicon germanium CMOS channel
04/08/2003US6544851 Method of manufacturing a semiconductor device having a pocket implant in channel region
04/08/2003US6544848 Method to form an asymmetrical non-volatile memory device using small in-situ doped polysilicon spacers
04/08/2003US6544846 Method of manufacturing a single electron resistor memory device
04/08/2003US6544845 Methods of fabricating nonvolatile memory devices including bird's beak oxide
04/08/2003US6544844 Method for forming a flash memory cell having contoured floating gate surface
04/08/2003US6544843 Process for manufacturing semiconductor device
04/08/2003US6544839 Semiconductor integrated circuit device and a method of manufacturing the same
04/08/2003US6544833 Semiconductor memory device and manufacturing method thereof
04/08/2003US6544832 Method of fabricating a stack capacitor DRAM
04/08/2003US6544831 Semiconductor device and method for manufacturing the same
04/08/2003US6544830 Method of manufacturing a semiconductor device with multiple emitter contact plugs
04/08/2003US6544828 Adding a poly-strip on isolation's edge to improve endurance of high voltage NMOS on EEPROM
04/08/2003US6544827 Metal-gate field effect transistor and method for manufacturing the same
04/08/2003US6544826 Method for producing semiconductor device
04/08/2003US6544823 Method of manufacturing semiconductor device
04/08/2003US6544822 Method for fabricating MOSFET device
04/08/2003US6544821 Stereolithographic methods of fabricating semiconductor devices having protective layers thereon through which contact pads are exposed
04/08/2003US6544674 Stable electrical contact for silicon carbide devices
04/08/2003US6544655 Semiconductors reduced; silicon wafer having reduced out-of-plane curvature
04/03/2003WO2003028125A2 Substituted pentacene semiconductors
04/03/2003WO2003028123A1 Matrix type piezoelectric/electrostrictive device and its manufacturing method
04/03/2003WO2003028113A1 Semiconductor device and its manufacturing method
04/03/2003WO2003028112A1 Semiconductor integrated circuit device and its manufacturing method
04/03/2003WO2003028111A1 Nonvolatile semiconductor memory device and its manufacturing method
04/03/2003WO2003028110A1 Semiconductor device
04/03/2003WO2003028109A1 Silicon carbide lateral metal oxide semiconductor field-effect transistor having a self-aligned dirft region and method for forming the same
04/03/2003WO2003028108A1 Semiconductor device and method for fabricating the same
04/03/2003WO2003028106A2 Rf circuits including transistors having strained material layers
04/03/2003WO2003028076A1 Method of manufacturing semiconductor device having composite buffer layer
04/03/2003WO2003028072A1 Method for manufacturing semiconductor device
04/03/2003WO2003009404A3 Transistor and method for making a transistor on a sige/soi substrate
04/03/2003WO2002049118A3 Trench schottky barrier rectifier and method of making the same
04/03/2003WO2002007312A3 Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
04/03/2003US20030064575 Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure
04/03/2003US20030064574 Asymmetrical mosfet layout for high currents and high speed operation
04/03/2003US20030064573 Method for producing a MOS transistor and MOS transistor
04/03/2003US20030064571 Process for producing polysilicon film
04/03/2003US20030064569 Method of peeling off and method of manufacturing semiconductor device
04/03/2003US20030064564 Method of fabrication a flash memory cell
04/03/2003US20030064560 Method for manufacturing a semiconductor device
04/03/2003US20030064555 Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit
04/03/2003US20030064554 CMOS process for double vertical channel thin film transistor
04/03/2003US20030064553 Method of producing semiconductor device and its structure
04/03/2003US20030064551 Method of forming predominantly <100> polycrystalline silicon thin film transistors
04/03/2003US20030064538 Bipolar transistor, semiconductor light emitting device and semiconductor device
04/03/2003US20030063498 Memory cell of the famos type having several programming logic levels
04/03/2003US20030063429 Capacitor, semiconductor device, electro-optic device, method of manufacturing capacitor, method of manufacturing semiconductor device, and electronic apparatus
04/03/2003US20030063249 Substrate for use in a liquid crystal display and liquid crystal display using the same
04/03/2003US20030063233 Liquid crystal display device having uniform feedthrough voltage components
04/03/2003US20030063229 Liquid crystal display device
04/03/2003US20030062946 Enhanced conductivity body biased PMOS driver
04/03/2003US20030062845 Display device
04/03/2003US20030062844 Unit circuit, electronic circuit, electronic apparatus, electro-optic apparatus, driving method, and electronic equipment
04/03/2003US20030062821 Radiation-emitting semiconductor component
04/03/2003US20030062622 Plural semiconductor devices in monolithic flip chip
04/03/2003US20030062613 Semiconductor device and manufacturing method thereof
04/03/2003US20030062598 Method for manufacturing and structure of semiconductor device with sinker contact region
04/03/2003US20030062597 Switching device
04/03/2003US20030062593 High dopant concentration diffused resistor and method of manufacture therefor
04/03/2003US20030062589 Method for manufacturing and structure of semiconductor device with shallow trench collector contact region
04/03/2003US20030062587 Forming a gate insulating film on a semiconductor substrate; forming a silicon film on insulating film; forming a pattern of an oxidation resisting film on silicon film; thermally oxidizing first silicon film; removing pattern; patterning
04/03/2003US20030062586 Gate structure and method
04/03/2003US20030062584 Reverse recovery characteristic
04/03/2003US20030062581 Pin diode and method for fabricating the diode
04/03/2003US20030062580 Spin-valve transistor
04/03/2003US20030062579 Micromechanical diaphragm
04/03/2003US20030062577 Method and system for forming dual work function gate electrodes in a semiconductor device
04/03/2003US20030062576 Semiconductor integrated circuit device
04/03/2003US20030062575 Method of manufacturing semiconductor device and semiconductor device
04/03/2003US20030062574 Efficiency