Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2003
04/03/2003US20030062573 SOI type MOS element and manufacturing method thereof
04/03/2003US20030062572 Transistor with bottomwall/sidewall junction capacitance reduction region and method
04/03/2003US20030062571 Low noise microwave transistor based on low carrier velocity dispersion control
04/03/2003US20030062570 Method for making trench MIS device with reduced gate-to-drain capacitance
04/03/2003US20030062569 Self-aligned dual-oxide umosfet device and a method of fabricating same
04/03/2003US20030062567 Non volatile dielectric memory cell structure with high dielectric constant capacitive coupling layer
04/03/2003US20030062560 Quantum tunneling transistor
04/03/2003US20030062555 Realistic formation method for such devices which does not require poor step coverage of the thin films employed.
04/03/2003US20030062553 Epitaxial template and barrier for the integration of functional thin film metal oxide heterostructures on silicon
04/03/2003US20030062548 High-voltage transistor with buried conduction layer
04/03/2003US20030062546 Semiconductor device and manufacturing method thereof
04/03/2003US20030062542 Electro-optical device, method for fabricating the same, and electronic apparatus
04/03/2003US20030062540 Silicon-on-insulator diodes and ESD protection circuits
04/03/2003US20030062539 Forming lateral bipolar junction transistor in CMOS flow
04/03/2003US20030062538 Semiconductor device and electronic device using the same
04/03/2003US20030062537 Field-effect type semiconductor device for power amplifier
04/03/2003US20030062535 Turn-off high power semiconductor device
04/03/2003US20030062526 Substrates having increased thermal conductivity for semiconductor structures
04/03/2003US20030062525 Gallium nitride based diodes with low forward voltage and low reverse current operation
04/03/2003US20030062524 Light emitting device, method of driving a light emitting device, element substrate, and electronic equipment
04/03/2003US20030062523 Electro-luminescent display and a method of manufacturing the same
04/03/2003US20030062522 Semiconductor device
04/03/2003US20030062519 Light emitting device, electronic equipment, and organic polarizing film
04/03/2003US20030062509 Field effect transistor, OLED, electroluminescent device, RFID tag, backlight, photovoltaic or sensor device, or electrophotographic recording device; security marking; charge injection layer, planarising layer, antistatic film
04/03/2003US20030062499 Electro-optical device and manufacturing method thereof
04/03/2003US20030062261 High purity zirconium or hafnium, sputtering target comprising the high purity zirconium of hafnium and thin film formed using the target, and method for producing high purity zirconium or hafnium and method for producing powder of high purity zirconium or hafnium
04/02/2003EP1298802A1 Method for controlling a power semiconductor
04/02/2003EP1298733A1 Turn-off high-power semiconductor device
04/02/2003EP1298732A1 Periphery of high-voltage components
04/02/2003EP1298730A2 Ferroelectric memory and method for fabricating the same
04/02/2003EP1298722A2 Method of forming dual work function gate electrodes in a semiconductor device
04/02/2003EP1298719A2 Method for manufacturing and structure of semiconductor device with shallow trench collector contact region
04/02/2003EP1298718A2 Method for manufacturing and structure of semiconductor device with sinker contact region
04/02/2003EP1298717A1 Method for manufacturing a semiconductor device having a pn junction area
04/02/2003EP1298712A2 Gate structure and method of forming the same
04/02/2003EP1298711A2 Manufacturing method of an integrated semiconductor arrangement and semiconductor arrangement thus produced
04/02/2003EP1298710A1 Method for protecting a tungsten element in semiconductor device fabrication
04/02/2003EP1298442A1 Acceleration sensor
04/02/2003EP1297575A1 Power semiconductor component and method for producing the same
04/02/2003EP1297568A2 Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same
04/02/2003EP1297567A1 Hydrogen implant for buffer zone of punch-through non epi igbt
04/02/2003EP1297563A1 Bottom anti-reflective coating using rapid thermal anneal with oxidizing gas
04/02/2003EP1297535A1 Reference cell for high speed sensing in non-volatile memories
04/02/2003EP1025449A4 Electron devices for single electron and nuclear spin measurement
04/02/2003EP0868750B1 Current-limiting semiconductor arrangement
04/02/2003CN1408126A Integrated component comprising metal-insulator-metal capacitor
04/02/2003CN1408123A Indium-enhanced bipolar transistor
04/02/2003CN1407796A 显示装置 Display device
04/02/2003CN1407633A Shottky barrier diode and its manufacture
04/02/2003CN1407632A Shottky barrier diode and its manufacture
04/02/2003CN1407631A Shottky barrier diode and its manufacture
04/02/2003CN1407630A Semiconductor device and its manufacture
04/02/2003CN1407629A Luminous device and its driving method, element substrate and electronic apparatus
04/02/2003CN1407627A Non-volatility memory unit with separate bit line structure
04/02/2003CN1407626A Vertical nitride read out-only memory unit
04/02/2003CN1407625A Semiconductor memory device, semiconductor device and its manufacture
04/02/2003CN1407621A Electrostatic discharge protection for output of CMDS device
04/02/2003CN1407615A Memory device of film transistor
04/02/2003CN1407609A Field effect transistor formed on insulative substrate and its integrated circuit thereof
04/02/2003CN1407608A Compound semiconductor device manufacture
04/02/2003CN1407601A Manufacture of semiconductor device
04/02/2003CN1407557A Method and structure for maximizing SN ratio of electric resistance array
04/02/2003CN1407527A 液晶显示装置 The liquid crystal display device
04/02/2003CN1406865A Nano Wire, production and use thereof
04/02/2003CN1104744C CMOSFET and method for fabricating the same
04/02/2003CN1104740C Method for mfg. of complementary MOS semiconductor device
04/01/2003US6542406 Row decoder of a NOR-type flash memory device
04/01/2003US6542137 With reduction in the off-current of a switching thin-film transistor (TFT) and an increase in the on-current of a current TFT in a current-drive TFT display
04/01/2003US6541871 Method for fabricating a stacked chip package
04/01/2003US6541866 Cobalt barrier for nickel silicidation of a gate electrode
04/01/2003US6541841 Semiconductor device including high frequency circuit with inductor
04/01/2003US6541840 On-chip capacitor
04/01/2003US6541836 Semiconductor radiation detector with internal gain
04/01/2003US6541833 Micromechanical component with sealed membrane openings and method of fabricating a micromechanical component
04/01/2003US6541830 Titanium boride gate electrode and interconnect
04/01/2003US6541829 Semiconductor device and method of manufacturing the same
04/01/2003US6541827 Semiconductor device having a patterned insulated gate
04/01/2003US6541826 Field effect semiconductor device and its production method
04/01/2003US6541825 Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same
04/01/2003US6541823 Semiconductor device including multiple field effect transistors and manufacturing method thereof
04/01/2003US6541822 Method of manufacturing an SOI type semiconductor that can restrain floating body effect
04/01/2003US6541821 SOI device with source/drain extensions and adjacent shallow pockets
04/01/2003US6541820 Low voltage planar power MOSFET with serpentine gate pattern
04/01/2003US6541818 Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region
04/01/2003US6541817 Trench-gate semiconductor devices and their manufacture
04/01/2003US6541816 Planar structure for non-volatile memory devices
04/01/2003US6541815 High-density dual-cell flash memory structure
04/01/2003US6541814 MOS variable capacitor with controlled dC/dV and voltage drop across W of gate
04/01/2003US6541805 Solid-state image pickup device
04/01/2003US6541804 Junction-isolated lateral MOSFET for high-/low-side switches
04/01/2003US6541801 Triac with a holding voltage that is greater than the dc bias voltages that are on the to-be-protected nodes
04/01/2003US6541795 Thin film semiconductor device and production method for the same
04/01/2003US6541794 Imaging device and method
04/01/2003US6541793 Active layer is a silicon film crystallized using a metal element; elimination of bad affection of such metal element to the thin film transistor characteristics using an n-type dopant; display device
04/01/2003US6541394 Method of making a graded grown, high quality oxide layer for a semiconductor device
04/01/2003US6541389 Method of patterning a thin layer by chemical etching
04/01/2003US6541373 Manufacture method for semiconductor with small variation in MOS threshold voltage
04/01/2003US6541362 Methods of forming semiconductor structures
04/01/2003US6541359 Optimized gate implants for reducing dopant effects during gate etching
04/01/2003US6541357 Semiconductor device and method of manufacturing the same