Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2003
04/01/2003US6541351 Method for limiting divot formation in post shallow trench isolation processes
04/01/2003US6541348 Semiconductor device and manufacturing method thereof
04/01/2003US6541345 Semiconductor device with SOI structure
04/01/2003US6541343 Methods of making field effect transistor structure with partially isolated source/drain junctions
04/01/2003US6541341 Method for fabricating MOS field effect transistor
04/01/2003US6541336 Method of fabricating a bipolar transistor having a realigned emitter
04/01/2003US6541328 Method of fabricating metal oxide semiconductor transistor with lightly doped impurity regions formed after removing spacers used for defining higher density impurity regions
04/01/2003US6541327 Method to form self-aligned source/drain CMOS device on insulated staircase oxide
04/01/2003US6541326 Nonvolatile semiconductor memory device and process of production and write method thereof
04/01/2003US6541324 Method of forming a semiconductor array of floating gate memory cells having strap regions and a peripheral logic device region
04/01/2003US6541323 Method for fabricating polysilicon thin film transistor
04/01/2003US6541322 Method for preventing gate depletion effects of MOS transistor
04/01/2003US6541321 Method of making transistors with gate insulation layers of differing thickness
04/01/2003US6541320 Method to controllably form notched polysilicon gate structures
04/01/2003US6541318 Manufacturing process of a high integration density power MOS device
04/01/2003US6541317 Polysilicon doped transistor
04/01/2003US6541316 Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction
04/01/2003US6541315 Semiconductor device and fabrication method thereof
04/01/2003US6541314 Semiconductor device with SOI structure and method of manufacturing the same
04/01/2003US6541313 Transistor and process for fabricating the same
04/01/2003US6541298 Method of making infrared sensor with a thermoelectric converting portion
04/01/2003US6541294 Semiconductor device and manufacturing method thereof
04/01/2003US6541293 Semiconductor light-emitting device and manufacturing method thereof
04/01/2003US6541285 Method of estimating lifetime of semiconductor device, and method of reliability simulation
04/01/2003US6541280 Dielectric layer of lanthanum aluminate over the semiconductor substrate; and an electrode layer over the dielectric layer
04/01/2003US6541278 Method of forming film for semiconductor device with supercritical fluid
04/01/2003US6540961 Flow cell includes inlet and outlet chambers connected to a flow cell chamber; an array containing electrodes is within the flow cell chamber; inlet and outlet chambers have constant cross-sectional flow areas
04/01/2003US6539928 Vehicle-mounted ignitor
03/2003
03/28/2003CA2357985A1 Method for manufacturing a semiconductor device
03/27/2003WO2003026034A1 Transistor assembly and method for the production thereof
03/27/2003WO2003026021A2 Gallium nitride based diodes with low forward voltage and low reverse current operation
03/27/2003WO2003026020A1 Low-capacity vertical diode
03/27/2003WO2003026019A1 Semiconductor device and production method therefor
03/27/2003WO2003026018A1 Semiconductor device and production method therefor
03/27/2003WO2003026014A1 Semiconductor memory element, production method and operational method
03/27/2003WO2003025995A1 Semiconductor device and high-frequency amplifier comprising it
03/27/2003WO2003025992A1 Dielectric film
03/27/2003WO2003025989A2 Formation of self-organized stacked islands for self-aligned contacts
03/27/2003WO2003025984A2 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
03/27/2003WO2003025977A2 Method for wrapped-gate mosfet
03/27/2003WO2003025949A1 Selective operation of a multi-state non-volatile memory system in a binary mode
03/27/2003WO2003024865A2 Method for producing micro-electromechanical components
03/27/2003WO2003001603A3 Bipolar transistor with raised extrinsic base fabricated in an integrated bicmos circuit
03/27/2003WO2002075791A3 Metal gate stack with etch stop layer improved through implantation of metallic atoms
03/27/2003WO2002059984A3 Stabilization of configurable molecular mechanical devices
03/27/2003WO2002037569A3 Trench gate mos semiconductor device
03/27/2003US20030060177 Integrated circuit and receiving device
03/27/2003US20030060058 Method and structure for oxide/silicon nitride interface substructure improvements
03/27/2003US20030060057 Method of forming ultrathin oxide layer
03/27/2003US20030060056 Etching solution for signal wire and method of fabricating thin film transistor array panel with the same
03/27/2003US20030060038 Forming interconnects
03/27/2003US20030060031 Manufacturing method of schottky barrier diode
03/27/2003US20030060026 Laser annealing method and apparatus
03/27/2003US20030060018 Metal gate CMOS and method of manufacturing the same
03/27/2003US20030060016 Method for fabricating semiconductor device
03/27/2003US20030060015 Multiple operating voltage vertical replacement-gate (VRG) transistor
03/27/2003US20030060014 Field effect transistor configuration with high latch-up resistance, and method for its production
03/27/2003US20030060013 Method of manufacturing trench field effect transistors with trenched heavy body
03/27/2003US20030060011 Semiconductor device and method of manufacturing the same
03/27/2003US20030060010 Fabrication method for a flash memory device with a split floating gate and a structure thereof
03/27/2003US20030060005 Increased capacitance trench capacitor
03/27/2003US20030060001 Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
03/27/2003US20030059998 Semiconductor devices and methods
03/27/2003US20030059995 Deep sub-micron raised source/drain CMOS structure and method of making the same
03/27/2003US20030059993 Method of manufacturing semiconductor device
03/27/2003US20030059990 Method for manufacturing semiconductor device
03/27/2003US20030059989 Method of manufacturing a thin-film transistor comprising a recombination center
03/27/2003US20030059988 Method for SOI device isolation
03/27/2003US20030059987 Inkjet-fabricated integrated circuits
03/27/2003US20030059986 Semiconductor device, manufacturing method thereof, and displaly device
03/27/2003US20030059984 Solution processing
03/27/2003US20030059976 Integrated package and methods for making same
03/27/2003US20030059975 Solution processed devices
03/27/2003US20030059929 Apparatus for use in the preparation or analysis of biopolymers
03/27/2003US20030058715 Nonvolatile semiconductor memory device and method for testing the same
03/27/2003US20030058709 Ferroelectric memory and method for fabricating the same
03/27/2003US20030058705 Semiconductor device and method of manufacturing the same
03/27/2003US20030058697 Programmable molecular device
03/27/2003US20030058399 Field sequential liquid crystal display apparatus using active matrix liquid crystal display device
03/27/2003US20030058378 Thin film transistor crystal liquid display device including plural conductive beads and manufacturing method thereof
03/27/2003US20030058376 Liquid crystal display device and method of manufacturing the same
03/27/2003US20030058374 Liquid crystal display and method of manufacturing the same
03/27/2003US20030058027 Circuits and methods for electrostatic discharge protection in integrated circuits
03/27/2003US20030057964 Method of and an apparatus for collecting RF input and output and biasing signal data of a device under test
03/27/2003US20030057856 EL display device, driving method thereof, and electronic equipment provided with the EL display device
03/27/2003US20030057563 Integrated package and methods for making same
03/27/2003US20030057554 Semiconductor structure with substantially etched nitride and/or oxynitride defects protruding therefrom
03/27/2003US20030057544 Substrate for receipt of packaged components face down or face up in such manner as to allow interconnection of packaged components using photolithographic techniques or direct laser writing so as to provide a monolithic integrated structure
03/27/2003US20030057525 Flexible integrated monolithic circuit
03/27/2003US20030057524 Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
03/27/2003US20030057523 Semiconductor device and drive circuit using the semiconductor devices
03/27/2003US20030057522 Process to create buried heavy metal at selected depth
03/27/2003US20030057521 Semiconductor structure used for fabricating bipolar transistors and method of fabricating the same
03/27/2003US20030057513 Membrane IC fabrication
03/27/2003US20030057510 Capacitance element and boosting circuit using the same
03/27/2003US20030057507 CMOS-compatible metal-semiconductor-metal photodetector
03/27/2003US20030057506 Dielectric film
03/27/2003US20030057505 Semiconductor device and method of manufacturing the same
03/27/2003US20030057504 Seminconductor device and method of manufacturing the same
03/27/2003US20030057503 Semiconductor device
1 ... 1637 1638 1639 1640 1641 1642 1643 1644 1645 1646 1647 1648 1649 1650 1651 1652 1653 1654 1655 1656 1657 ... 2182