Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2003
03/12/2003CN1402359A 半导体装置 Semiconductor device
03/12/2003CN1402357A Field effect transistor and mfg. method thereof, and liquid crystal display device and mfg. method thereof
03/12/2003CN1402356A Semiconductor device of longitudinal structure
03/12/2003CN1402352A Semiconductor device with floating grid and mfg. method thereof
03/12/2003CN1402350A Semiconductor capable of preventing generating multiple reflection, and driving and setting method
03/12/2003CN1402337A Ferroelectric memory transistor mfg. method
03/12/2003CN1402307A Method for mfg. gate dielectric layer
03/12/2003CN1402297A 阴极射线管 A cathode ray tube
03/12/2003CN1402214A Electronic Device, Electro-optical device and electronic apparatus
03/12/2003CN1402066A Substrate with embedded structure, display device comprising same, method for mfg. said substrate and method for mfg. display device
03/12/2003CN1402064A Transmission-reflection LCD and mfg. method thereof
03/12/2003CN1402057A Electrooptical device, mfg. method thereof, and projection display device and electronic device
03/12/2003CN1103122C Non volatile memory device and method for fabricating same
03/12/2003CN1103121C CMOS output buffer with antistatic capacity
03/12/2003CN1103118C Method for fabricating self assembling microstructures
03/12/2003CN1103117C Manufacturing process for field effect transistor capable of changing its threshold voltage by hydrion
03/12/2003CN1103115C Integrated microstructures of semiconductor material and method of fabricating same
03/11/2003US6532438 Method and system for improving a transistor model
03/11/2003US6532173 Nonvolatile semiconductor memory device with mechanism to prevent leak current
03/11/2003US6532172 Steering gate and bit line segmentation in non-volatile memories
03/11/2003US6532166 Memory device using a transistor and its fabrication method
03/11/2003US6532165 Nonvolatile semiconductor memory and driving method thereof
03/11/2003US6531861 Movement actuator/sensor systems
03/11/2003US6531781 Fabrication of transistor having elevated source-drain and metal silicide
03/11/2003US6531760 Semiconductor device
03/11/2003US6531751 Semiconductor device with increased gate insulator lifetime
03/11/2003US6531750 Shallow junction transistors which eliminating shorts due to junction spiking
03/11/2003US6531749 Field effect transistor having a two layered gate electrode
03/11/2003US6531748 Semiconductor power component with a reduced parasitic bipolar transistor
03/11/2003US6531744 Integrated circuit provided with overvoltage protection and method for manufacture thereof
03/11/2003US6531743 SOI MOS field effect transistor and manufacturing method therefor
03/11/2003US6531741 Dual buried oxide film SOI structure and method of manufacturing the same
03/11/2003US6531738 High voltage SOI semiconductor device
03/11/2003US6531737 Semiconductor device having an improved interlayer contact and manufacturing method thereof
03/11/2003US6531736 Semiconductor device and method of manufacturing thereof
03/11/2003US6531735 Semiconductor integrated circuit
03/11/2003US6531734 Self-aligned split-gate flash memory cell having an integrated source-side erase structure and its contactless flash memory arrays
03/11/2003US6531733 Structure of flash memory cell and method for manufacturing the same
03/11/2003US6531732 Nonvolatile semiconductor memory device, process of manufacturing the same and method of operating the same
03/11/2003US6531731 Integration of two memory types on the same integrated circuit
03/11/2003US6531727 Open bit line DRAM with ultra thin body transistors
03/11/2003US6531722 InGaAs on the collector layer, an InP layer on the base layer, and an emitter contact layer made of InGaAs
03/11/2003US6531721 Structure for a heterojunction bipolar transistor
03/11/2003US6531720 Dual sidewall spacer for a self-aligned extrinsic base in SiGe heterojunction bipolar transistors
03/11/2003US6531718 Semiconductor device
03/11/2003US6531717 Very low voltage actuated thyristor with centrally-located offset buried region
03/11/2003US6531715 Multilayer contact electrode for compound semiconductors and production method thereof
03/11/2003US6531713 Electro-optical device and manufacturing method thereof
03/11/2003US6531410 Intrinsic dual gate oxide MOSFET using a damascene gate process
03/11/2003US6531396 Method of fabricating a nickel/platinum monsilicide film
03/11/2003US6531394 Method for forming gate electrode of semiconductor device
03/11/2003US6531392 Method of forming a thin film transistor array panel using photolithography techniques
03/11/2003US6531383 Method for manufacturing a compound semiconductor device
03/11/2003US6531380 Method of fabricating T-shaped recessed polysilicon gate transistors
03/11/2003US6531379 High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe
03/11/2003US6531369 Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe)
03/11/2003US6531368 Method of fabricating a semiconductor device having a metal oxide high-k gate insulator by localized laser irradiation and a device thereby formed
03/11/2003US6531364 Advanced fabrication technique to form ultra thin gate dielectric using a sacrificial polysilicon seed layer
03/11/2003US6531360 Method of manufacturing a flash memory device
03/11/2003US6531359 Method for fabricating a memory cell array
03/11/2003US6531355 LDMOS device with self-aligned RESURF region and method of fabrication
03/11/2003US6531354 Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors
03/11/2003US6531351 Method for forming a CMOS circuit of GaAS/Ge on Si substrate
03/11/2003US6531350 Twin MONOS cell fabrication method and array organization
03/11/2003US6531349 Method of etching polycrystalline silicon film by using two consecutive dry-etching processes
03/11/2003US6531348 Method for crystallizing amorphous silicon and fabricating thin film transistor using crystallized silicon
03/11/2003US6531346 Fabrication method of thin film transistor substrate for X-ray detector
03/11/2003US6531338 Method of manufacturing a semiconductor structure having stacked semiconductor devices
03/11/2003US6531337 Method of manufacturing a semiconductor structure having stacked semiconductor devices
03/11/2003US6531325 Memory transistor and method of fabricating same
03/11/2003US6531324 MFOS memory transistor & method of fabricating same
03/06/2003WO2003019764A1 Pulsed electron jump generator
03/06/2003WO2003019695A1 Molecular memory and method for making same
03/06/2003WO2003019693A2 Solutions of organic semiconductors
03/06/2003WO2003019673A1 A semiconductor rectifier
03/06/2003WO2003019672A1 Complete depletion soi transistor manufacturing method
03/06/2003WO2003019671A2 Vertical dual gate field effect transistor
03/06/2003WO2003019664A2 Non-volatile semiconductor memory
03/06/2003WO2003019644A1 Forming method and forming system for insulation film
03/06/2003WO2003019643A1 Semiconductor device having high-permittivity insulation film and production method therefor
03/06/2003WO2003019636A1 Production method and production device for semiconductor device
03/06/2003WO2003019632A1 Production method for semiconductor substrate and production method for field effect transistor and semiconductor substrate and field effect transistor
03/06/2003WO2003019623A2 Trench dmos transistor with embedded trench schottky rectifier
03/06/2003WO2003019586A1 Magnetoresistive device and electronic device
03/06/2003WO2003019573A1 Non-volatile semiconductor memory and method of operating the same
03/06/2003WO2003018882A1 Improved polycrystalline tft uniformity through microstructure mis-alignment
03/06/2003WO2003018465A1 Substituted donor atoms in silicon crystal for quantum computer
03/06/2003WO2002069410A3 Gallium nitride material devices including backside vias and methods of fabrication
03/06/2003WO2002065536A3 Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same
03/06/2003WO2002056385A3 Optically powered resonant tunneling device
03/06/2003WO2002035611A3 Unipolar spin diode and transistor and the applications of the same
03/06/2003WO2002031890A3 OPTOELECTRONIC AND MICROELECTRONIC DEVICES INCLUDING CUBIC ZnMgO AND/OR CdMgO ALLOYS AND METHODS OF FABRICATING SAME
03/06/2003WO2002019432A3 Trench mosfet with structure having low gate charge
03/06/2003US20030046603 Flash EEprom system
03/06/2003US20030045123 Method for fabrication of a high capacitance interpoly dielectric
03/06/2003US20030045082 Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators
03/06/2003US20030045081 MOSFET having a stacked silicon structure and method
03/06/2003US20030045080 Gate structure and method
03/06/2003US20030045078 Highly reliable amorphous high-K gate oxide ZrO2
03/06/2003US20030045077 Method for manufacturing semiconductor device, and semiconductor device
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