Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2003
04/10/2003WO2003029354A1 Organic semiconductor material and organic semiconductor element employing the same
04/10/2003WO2003019671A3 Vertical dual gate field effect transistor
04/10/2003WO2003005415A3 Super gto-based power blocks
04/10/2003WO2002103758A3 Telecommunications switch array with thyristor addressing
04/10/2003WO2002101818A3 Method for isolating semiconductor devices
04/10/2003WO2002089195A3 Method of manufacturing a trench-gate semiconductor device
04/10/2003WO2002084727A3 Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
04/10/2003US20030068883 Self-aligned silicide (salicide) process for strained silicon MOSFET on SiGe and structure formed thereby
04/10/2003US20030068875 Semiconductor device having groove and method of fabricating the same
04/10/2003US20030068874 Semiconductor device and method of fabricating the same
04/10/2003US20030068872 Laser annealing method and laser annealing device
04/10/2003US20030068870 Method of manufacturing semiconductor element
04/10/2003US20030068869 Dopant precursors and processes
04/10/2003US20030068865 Methods of forming a field effect transistors
04/10/2003US20030068864 Method for fabricating power semiconductor device having trench gate structure
04/10/2003US20030068863 Method for fabricating a power semiconductor device having a floating island voltage sustaining layer
04/10/2003US20030068860 Non-volatile memory cells with selectively formed floating gate
04/10/2003US20030068854 Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating Islands
04/10/2003US20030068851 Dopant precursors and processes
04/10/2003US20030068849 Novel CMOS circuit of GaAs/Ge on Si substrate
04/10/2003US20030068848 MFOS memory transistor
04/10/2003US20030068845 Flash device having trench source line
04/10/2003US20030068836 Laser annealing apparatus, TFT device and annealing method of the same
04/10/2003US20030068519 Method for assembly of complementary-shaped receptacle site and device microstructures
04/10/2003US20030067822 Semiconductor device with improved latch arrangement
04/10/2003US20030067455 System and method for manufacturing an electro-optical device
04/10/2003US20030067342 Method for driving a power semiconductor
04/10/2003US20030067321 Apparatus and methods for silicon-on-insulator transistors in programmable logic devices
04/10/2003US20030067267 Mono-, oligo-and polyalkylidenefluorenes and their use as charge transport materials
04/10/2003US20030067064 Stack package using flexible double wiring substrate
04/10/2003US20030067046 Semiconductor device
04/10/2003US20030067045 Semiconductor device and method of manufacturing the same
04/10/2003US20030067044 Semiconductor-on-insulator resistor-capacitor circuit
04/10/2003US20030067041 Method for textured surfaces in floating gate tunneling oxide devices
04/10/2003US20030067040 ESD protection devices and methods to reduce trigger voltage
04/10/2003US20030067039 Electrostatic discharge protection structure
04/10/2003US20030067038 ITO film contact structure, TFT substrate and manufacture thereof
04/10/2003US20030067037 Melting surface layer of semiconductor; exposure laser beam to dopes
04/10/2003US20030067036 Reduced intake, drain capacitance
04/10/2003US20030067035 Gate processing method with reduced gate oxide corner and edge thinning
04/10/2003US20030067034 Rugged and fast power mosfet and IGBT
04/10/2003US20030067033 High withstand voltage semiconductor device
04/10/2003US20030067032 Process for manufacturing a dual charge storage location memory cell
04/10/2003US20030067030 Non-volatile semiconductor memory and its driving method
04/10/2003US20030067026 Gate-enhanced junction varactor
04/10/2003US20030067022 Semiconductor nonvolatile storage element and method of fabricating the same
04/10/2003US20030067021 Semiconductor device and manufacturing method of the same
04/10/2003US20030067020 Semiconductor device
04/10/2003US20030067019 Fast line dump structure for solid state image sensor
04/10/2003US20030067017 Variable threshold voltage double gated transistors and method of fabrication
04/10/2003US20030067012 Vertical bipolar transistor formed using CMOS processes
04/10/2003US20030067007 Thin film transistor, thin film transistor array substrate, liquid crystal display device, and electroluminescent display device
04/10/2003US20030067006 Image sensing apparatus and reading apparatus
04/10/2003US20030067005 Composition, method and electronic device
04/10/2003US20030067004 Crystalline semiconductor film, method of manufacturing the same, and semiconductor device
04/10/2003US20030067003 Tin oxide nanostructures
04/10/2003US20030066998 Quantum dots of Group IV semiconductor materials
04/10/2003US20030066740 Switching element, display device, light emitting device using the switching element, and semiconductor device
04/10/2003DE10146479C1 Production of deep trench capacitor used for DRAM comprises forming structured mask layer on the substrate, forming deep trench in the substrate using the mask layer as mask, forming doped region in the substrate, and further processing
04/10/2003CA2462766A1 Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus
04/09/2003EP1300888A1 Process for manufacturing a dual charge storage location memory cell
04/09/2003EP1300887A1 Semiconductor device and method for manufacture thereof
04/09/2003EP1300886A2 High-voltage semiconductor devices
04/09/2003EP1300880A2 Method for the photolithographic definition of a substrate area
04/09/2003EP1299914A1 Field effect transistor
04/09/2003EP1299904A2 Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
04/09/2003EP1299903A1 Interface control for film deposition by gas-cluster ion-beam processing
04/09/2003EP1299902A1 Method for producing a gate for a cmos transistor structure having a channel of reduced length
04/09/2003EP1299900A2 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
04/09/2003EP1095346A4 Two-dimensional to three-dimensional vlsi design
04/09/2003EP1008893B1 Active matrix liquid crystal display
04/09/2003EP0653793B1 Semiconductor device
04/09/2003CN1409868A Pendeoepitaxial growth of gallium nitride layers on sapphire substrates
04/09/2003CN1409488A Method for driving power semiconductor element
04/09/2003CN1409417A Organic film transistor and preparing method
04/09/2003CN1409410A Transparent n-type zinc oxide/p-type diamond film heterojunction and its preparation
04/09/2003CN1409409A Schottky-barrier diode and its producing method
04/09/2003CN1409408A Semiconductor and its producing method
04/09/2003CN1409406A Large power switchable semiconductor device
04/09/2003CN1409405A Semiconductor chip of semiconductor discharge tube
04/09/2003CN1409400A Complementary metal oxide semiconductor device
04/09/2003CN1409398A Strong dielectric memory device and its producing method
04/09/2003CN1409387A Method for producing semiconductor integrated circuit
04/09/2003CN1409382A Laser radiation method and laser radiation device, and method for producing semiconductor device
04/09/2003CN1409378A Method for producing polycrystal silicon film
04/09/2003CN1409374A Stripping method and method for producing semiconductor device
04/09/2003CN1409373A Stripping method and method for producing semiconductor device
04/09/2003CN1409118A Acceleration transducer
04/08/2003US6546372 Assistance method and apparatus
04/08/2003US6546268 Glucose sensor
04/08/2003US6545914 Method of erasing a flash memory cell
04/08/2003US6545893 Non-volatile semiconductor memory
04/08/2003US6545735 Reflective plate structure provided in a reflective liquid crystal display having a thin film transistor
04/08/2003US6545515 Semiconductor switch having a voltage detection function
04/08/2003US6545370 Composite silicon nitride sidewall spacers for reduced nickel silicide bridging
04/08/2003US6545356 Graded layer for use in semiconductor circuits and method for making same
04/08/2003US6545354 Semiconductor device having a barrier layer
04/08/2003US6545341 Power transistor
04/08/2003US6545340 Semiconductor device
04/08/2003US6545328 Semiconductor device
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