Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2003
03/13/2003WO2003021666A1 Nonvolatile storage device and semiconductor integrated circuit
03/13/2003WO2003021662A1 Improved high k-dielectrics using nickel silicide
03/13/2003WO2003021640A2 Method for semiconductor gate doping
03/13/2003WO2003021639A2 Trench fet with self aligned source and contact
03/13/2003WO2003021633A1 Field-effect transistor with horizontal self-aligned gates and the production method therefor
03/13/2003WO2003021613A2 Electromechanical memory array using nanotube ribbons and method for making same
03/13/2003WO2002097899A3 Integrated tunable capacitor
03/13/2003WO2002089196A3 Trench-gate semiconductor devices and their manufacture
03/13/2003WO2002089177A3 A contact structure of a wiring line and method manufacturing the same, and thin film transistor array substrate including the contact structure and method manufacturing the same
03/13/2003WO2002050908A3 Gate length control for semiconductor chip design
03/13/2003WO2002037552A3 Doping for flash memory cell
03/13/2003WO2002023638A3 An optically addressed spin-polarised diode
03/13/2003US20030051093 Nonvolatile semiconductor memory device
03/13/2003US20030049942 Low temperature gate stack
03/13/2003US20030049940 Method for manufacturing field effect transistor
03/13/2003US20030049936 Semiconductor device having local interconnection layer and method for manufacturing the same
03/13/2003US20030049930 Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
03/13/2003US20030049919 Semiconductor device having smooth refractory metal silicide layers and process for fabrication thereof
03/13/2003US20030049917 Method for fabricating semiconductor device
03/13/2003US20030049909 Manufacturing method of a semiconductor device having a polysilicon electrode
03/13/2003US20030049907 Semiconductor device and manufacturing method therefor
03/13/2003US20030049905 Method of manufacturing semiconductor device
03/13/2003US20030049904 Method for fabricating a split gate flash memory cell
03/13/2003US20030049900 Graded composition gate insulators to reduce tunneling barriers in flash memory devices
03/13/2003US20030049895 Semiconductor integrated electronic device and corresponding manufacturing method
03/13/2003US20030049894 Si-based resonant interband tunneling diodes and method of making interband tunneling diodes
03/13/2003US20030049893 Method for isolating semiconductor devices
03/13/2003US20030049892 Thin film semiconductor device containing polycrystalline Si-Ge alloy and method for producing thereof
03/13/2003US20030049878 Micromechanical component and corresponding production method
03/13/2003US20030049876 Method of manufacturing semiconductor devices
03/13/2003US20030049874 Test element group, method of manufacturing a test element group, method of testing a semiconductor device, and semiconductor device
03/13/2003US20030048686 Semiconductor memory device
03/13/2003US20030048674 Nonvolatile semiconductor memory device
03/13/2003US20030048673 Test mode decoder in a flash memory
03/13/2003US20030048667 High-speed data programmable nonvolatile semiconductor memory device
03/13/2003US20030048666 Graded composition metal oxide tunnel barrier interpoly insulators
03/13/2003US20030048661 Nonvolatile semiconductor memory
03/13/2003US20030048395 Electric optical apparatus and manufacturing method of the same, projection display, and electronic instrument
03/13/2003US20030048370 Electrophoresis display device and electronic equiptments
03/13/2003US20030047804 Semiconductor device
03/13/2003US20030047796 Narrow channel field effect transistor and method of making the same
03/13/2003US20030047795 Compound semiconductor device, production method thereof, light-emitting device and transistor
03/13/2003US20030047793 High-voltage vertical transistor with a multi-layered extended drain structure
03/13/2003US20030047792 High-voltage lateral transistor with a multi-layered extended drain structure
03/13/2003US20030047788 High-voltage lateral transistor with a multi-layered extended drain structure
03/13/2003US20030047785 Thin film transistor and matrix display device
03/13/2003US20030047784 Semiconductor device
03/13/2003US20030047783 Liquid crystal display; configuration of an auxiliary capacitor connected to a pixel electrode in parallel and a configuration of a black matrix for preventing leakage of light at boundaries between adjacent pixels
03/13/2003US20030047782 Complementary MOS semiconductor device
03/13/2003US20030047781 Semiconductor device on silicon-on-insulator and method for manufacturing the semiconductor device
03/13/2003US20030047780 Semiconductor device and method for fabricating the same
03/13/2003US20030047779 Trench-gate semiconductor devices and their manufacture
03/13/2003US20030047778 Semiconductor device and method of manufacturing the same
03/13/2003US20030047777 Edge termination in a trench-gate MOSFET
03/13/2003US20030047776 Edge termination in MOS transistors
03/13/2003US20030047775 Capable of electric write and erase operations; quality
03/13/2003US20030047774 Nonvolatile semiconductor memory device, fabricating method thereof and operation method thereof
03/13/2003US20030047769 High-voltage vertical transistor with a multi-layered extended drain structure
03/13/2003US20030047768 High-voltage vertical transistor with a multi-layered extended drain structure
03/13/2003US20030047766 Split gate flash memory cell structure and method of manufacturing the same
03/13/2003US20030047763 Semiconductor device and method of manufacturing the same
03/13/2003US20030047756 Programmable memory address and decode circuits with ultra thin vertical body transistors
03/13/2003US20030047755 Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers and methods
03/13/2003US20030047753 Serving as a semiconductor device for amplifying a high-frequency electric power such as a microwave band, a millimeter wave band
03/13/2003US20030047751 Semiconductor integrated circuit device and method of manufacturing the same
03/13/2003US20030047750 Electrostatic discharge protection silicon controlled rectifier (ESD-SCR) for silicon germanium technologies
03/13/2003US20030047749 Vertical replacement-gate junction field-effect transistor
03/13/2003US20030047748 Large area silicon carbide devices
03/13/2003US20030047747 Non-volatile semiconductor memory with single layer gate structure
03/13/2003US20030047735 Photoelectric conversion device, glass composition for coating silicon, and insulating coating in contact with silicon
03/13/2003US20030047734 Bi-layer silicon film and method of fabrication
03/13/2003US20030047733 Active matrix display and electrooptical device
03/13/2003US20030047732 Semiconductor device and manufacturing method thereof
03/13/2003US20030047730 Light emitting device and manufacturing method thereof
03/13/2003US20030047720 For use as semiconductors or charge transport materials in optical, electrooptical or electronic devices including field effect transistors, electroluminescent, photovoltaic and sensor devices
03/13/2003US20030047719 For use as semiconductors or charge transport materials in optical, electrooptical or electronic devices including field effect transistors, electroluminescent, photovoltaics, sensors and electrophotographic recording devices
03/13/2003US20030047280 Peeling method and method of manufacturing semiconductor device
03/13/2003CA2454834A1 Electromechanical memory array using nanotube ribbons and method for making same
03/12/2003EP1291926A2 High-voltage semiconductor devices
03/12/2003EP1291925A1 Semiconductor device
03/12/2003EP1291924A1 MOS semiconductor device having a body region
03/12/2003EP1291923A2 Heterojunction bipolar transistor and production process therefore
03/12/2003EP1291922A1 Contact structure on a deep region formed in a semiconductor substrate
03/12/2003EP1291919A1 Nonvolatile memory
03/12/2003EP1291911A1 Method having resin package and method of producing the same
03/12/2003EP1291907A2 Method of making high-voltage semiconductor devices
03/12/2003EP1291905A2 Method for fabricating semiconductor device
03/12/2003EP1291879A2 Resistive memory array
03/12/2003EP1291841A2 Unit circuit, electronic circuit, electronic apparatus, electro-optic apparatus, driving method, and electronic equipment
03/12/2003EP1290735A1 A semiconductor device
03/12/2003EP1290734A1 Anode voltage sensor of a vertical power component and use for protecting against short circuits
03/12/2003EP1290733A1 Semiconductor device and method for manufacturing the same
03/12/2003EP1290732A1 Method for producing a field effect transistor having a floating gate
03/12/2003EP1290723A2 A semiconductor device and a method for forming patterns
03/12/2003EP1290719A2 Halo-free non-rectifying contact on chip with halo source/drain diffusion
03/12/2003EP1290059A1 Method of preparing a polymer, method of preparing a compound, compounds, polymers, and method of manufacturing an electronic device
03/12/2003CN1402882A Semiconductor circuit arrangement and method for producing same
03/12/2003CN1402881A Semiconductor circuit agrangement and method for producing same
03/12/2003CN1402363A Method for coating nucleic acid with metal by means of non-field produced metal nanoparticles
03/12/2003CN1402360A 半导体器件 Semiconductor devices
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