Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2003
03/06/2003US20030045074 Method for semiconductor gate doping
03/06/2003US20030045066 Method for fabricating a bipolar transistor having self-aligned emitter and base
03/06/2003US20030045063 Semiconductor device and method for manufacturing the same
03/06/2003US20030045061 Method of forming a spacer
03/06/2003US20030045060 Crystalline or amorphous medium-k gate oxides, Y2O3 and Gd2O3
03/06/2003US20030045057 Method of making nonvolatile memory device having reduced capacitance between floating gate and substrate
03/06/2003US20030045056 Method for manufacturing a semiconductor memory
03/06/2003US20030045048 Dielectric material forming methods and enhanced dielectric materials
03/06/2003US20030045045 Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
03/06/2003US20030045043 Display device
03/06/2003US20030045042 Method of fabricating semiconductor device and semiconductor device
03/06/2003US20030045040 Method for the production of a field-effect structure and field-effect structure
03/06/2003US20030045039 Method of fabricating a semiconductor device having reduced contact resistance
03/06/2003US20030045038 Method of forming low-temperature polysilicon
03/06/2003US20030045037 Thin film transistor memory device
03/06/2003US20030045035 Novel edge termination structure for semiconductor devices
03/06/2003US20030044608 Nanowire, method for producing the nanowire, nanonetwork using the nanowires, method for producing the nanonetwork, carbon structure using the nanowire, and electronic device using the nanowire
03/06/2003US20030043637 Flash memory with low tunnel barrier interpoly insulators
03/06/2003US20030043633 Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
03/06/2003US20030043630 Low tunnel barrier intergate insulator includes insulator comprising oxide of nickel, aluminum, tantalum, titantium, zirconium, niobium, yttrium, gadolinium; strontium orlead titanate; lead zirconate; or strontium-bismuth tantalate
03/06/2003US20030043622 DRAM Cells with repressed floating gate memory, low tunnel barrier interpoly insulators
03/06/2003US20030043328 Plane display element
03/06/2003US20030043309 Active matrix substrate and manufacturing method thereof
03/06/2003US20030043307 Liquid crystal display device
03/06/2003US20030043104 Liquid crystal display apparatus
03/06/2003US20030043061 D/A conversion circuit and semiconductor device
03/06/2003US20030042607 Diffusion barrier layer for semiconductor wafer fabrication
03/06/2003US20030042604 Power layout structure of main bridge chip substrate and motherboard
03/06/2003US20030042602 Multi-chip semiconductor device
03/06/2003US20030042577 Semiconductor material having an equilibrium dopant solubility
03/06/2003US20030042576 Method for enhancing the solubiilty of dopants in silicon
03/06/2003US20030042575 Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device
03/06/2003US20030042574 Contact structure on a deep region formed in a semiconductor substrate
03/06/2003US20030042568 Method of manufacturing MOSEFT and structure thereof
03/06/2003US20030042566 Layout structure for providing stable power source to a main bridge chip substrate and a motherboard
03/06/2003US20030042565 Field-effect transistor based on embedded cluster structures and process for its production
03/06/2003US20030042562 Magnetoresistive device and electronic device
03/06/2003US20030042559 Semiconductor device and a method for manufacturing the same
03/06/2003US20030042558 Nonvolatile semiconductor memory device having erasing characteristic improved
03/06/2003US20030042557 Semiconductor device and manufacturing method thereof
03/06/2003US20030042556 Semiconductor devices and their manufacture
03/06/2003US20030042555 Transistor and diode
03/06/2003US20030042550 High aspect ratio contact structure with reduced silicon consumption
03/06/2003US20030042549 Semiconductor device
03/06/2003US20030042548 Stable dielectric transistor, capacitors over substrate
03/06/2003US20030042547 Metal source and drain mos transistor, and method for making same
03/06/2003US20030042545 Multilayer transistor over radiation transparent substrate; liquid crystals display; annealing, crystallization under vacuum
03/06/2003US20030042544 Semiconductor device having a shallow trench isolation and method of fabricating the same
03/06/2003US20030042543 Semiconductor device
03/06/2003US20030042542 Semiconductor device having a thin film transistor and manufacturing method thereof
03/06/2003US20030042541 Method of making a high-voltage transistor with buried conduction regions
03/06/2003US20030042540 Source-down power transistor
03/06/2003US20030042538 Silicon carbide power device having protective diode and method for manufacturing silicon carbide power device having protective diode
03/06/2003US20030042537 Semiconductor device
03/06/2003US20030042535 Semiconductor device and manufacturing thereof
03/06/2003US20030042534 Scalable flash/NV structures and devices with extended endurance
03/06/2003US20030042533 Semiconductor memory device and manufacturing method thereof
03/06/2003US20030042532 In service programmable logic arrays with low tunnel barrier interpoly insulators
03/06/2003US20030042531 Flash memory element and manufacturing method thereof
03/06/2003US20030042530 Non-volatile semiconductor memory device and fabrication method therefor
03/06/2003US20030042529 Non-volatile semiconductor memory device and semiconductor integrated circuit
03/06/2003US20030042528 Sram cells with repressed floating gate memory, low tunnel barrier interpoly insulators
03/06/2003US20030042527 Programmable array logic or memory devices with asymmetrical tunnel barriers
03/06/2003US20030042525 Semiconductor apparatus having vertical structure
03/06/2003US20030042520 Semiconductor integrated circuit device and a method of manufacturing the same
03/06/2003US20030042519 Joining active material on semiconductor substrate; etching isolation zone forming channel; insertion capacitor node
03/06/2003US20030042518 Semiconductor integrated circuit device
03/06/2003US20030042515 Improved silicide process using high k-dielectrics
03/06/2003US20030042512 Vertical transistor and method of making
03/06/2003US20030042504 High speed semiconductior substrate; forming plug, patterning electrode
03/06/2003US20030042503 Transistor with intentionally tensile mismatched base layer
03/06/2003US20030042502 Heterojunction field effect transistor and manufacturing method therefor
03/06/2003US20030042501 Formation of insulating aluminum oxide in semiconductor substrates
03/06/2003US20030042499 ESD protection for a CMOS output stage
03/06/2003US20030042498 Method of forming a substrate-triggered SCR device in CMOS technology
03/06/2003US20030042496 Forming nitrides; etching
03/06/2003US20030042491 Silicon carbide semiconductor device and manufacturing method
03/06/2003US20030042490 Image sensor having large micro-lenses at the peripheral regions
03/06/2003US20030042486 Semiconductor device and method of production thereof
03/06/2003US20030042484 Thin film transistor
03/06/2003US20030042482 Thin film transistor array substrate having laser illumination indicator
03/06/2003US20030042480 Power transistor, semiconductor substrate for devices and method for manufacturing same
03/06/2003US20030042478 Optical devices with heavily doped multiple quantum wells
03/06/2003US20030042397 Laser annealing apparatus and method of fabricating thin film transistor
03/05/2003EP1289025A1 Method to deposit an oxyde layer on a substrate and photovoltaic cell using such substrate
03/05/2003EP1289024A1 FAMOS memory cell with several programmation logic levels
03/05/2003EP1289023A2 Nonvolatile semiconductor memory device, fabricating method thereof and operation method thereof
03/05/2003EP1289022A2 Power MOSFET transistor and Schottky diode
03/05/2003EP1289018A2 Nonvolatile semiconductor memory device having divided bit lines
03/05/2003EP1289016A2 ESD protection for CMOS-output stage
03/05/2003EP1289005A2 Method for fabricating a bipolar transistor having self-aligned emitter and base
03/05/2003EP1288963A2 Semiconductor integrated circuit
03/05/2003EP1288703A2 Electric optical apparatus and manufacturing of the same, projection display, and electronic instrument
03/05/2003EP1287607A1 Reduced load switching device and method
03/05/2003EP1287564A1 Variable capacitance capacitor
03/05/2003EP1287563A1 Field effect transistor and method for producing a field effect transistor
03/05/2003EP1287562A1 Power mosfet and method of making the same
03/05/2003EP1287559A1 Power transistors for radio frequencies
03/05/2003EP1287553A1 Chip scale surface mounted device and process of manufacture
03/05/2003EP1287552A1 Method of making a power mosfet
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