Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2003
02/20/2003US20030036243 Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method
02/20/2003US20030036238 Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction
02/20/2003US20030036237 Transistor structure and method for making same
02/20/2003US20030036236 Method for radiation hardening N-channel MOS transistors
02/20/2003US20030036234 Method for fabricating nonvolatile semiconductor memory device
02/20/2003US20030036230 Combination of bpteos oxide film with cmp and rta to achieve good data retention
02/20/2003US20030036225 Method of forming a semiconductor device with gettering a group xv element by means of infrared light
02/20/2003US20030036221 Thin film transistor array panel for liquid crystal display and method for manufacturing the same
02/20/2003US20030035259 Protection configuration for schottky diode
02/20/2003US20030034940 Active matrix display device and method of manufacturing same
02/20/2003US20030034560 Wiring structure of semiconductor device, electrode, and method for forming them
02/20/2003US20030034543 Semiconductor device with trench isolation structure
02/20/2003US20030034533 Silicide stop layer in a damascene semiconductor structure
02/20/2003US20030034532 Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
02/20/2003US20030034530 Nonvolatile semiconductor storage device
02/20/2003US20030034528 Semiconductor device, and method for manufacturing the same
02/20/2003US20030034525 Method of increasing the conductivity of a transparent conductive layer
02/20/2003US20030034524 Semiconductor device and method of producing the same
02/20/2003US20030034523 Semiconductor thin-film manufacturing method, semiconductor device manufacturing method, semiconductor device, integrated circuit, electro-optical device, and electronic appliance
02/20/2003US20030034522 Power MOS device with asymmetrical channel stucture for enhanced linear operation capability
02/20/2003US20030034521 Fabrication method for punch-through defect resistant semiconductor memory device
02/20/2003US20030034520 Semiconductor device having gate electrode in which depletion layer can be generated
02/20/2003US20030034519 Dual epitaxial layer for high voltage vertical conduction power MOSFET devices
02/20/2003US20030034518 Method for manufacturing semiconductor memory
02/20/2003US20030034517 Structure of split-gate eeprom memory cell
02/20/2003US20030034516 Structure of a non-volatile memory
02/20/2003US20030034515 Capacitor Structures
02/20/2003US20030034514 Methods of utilizing a sacrificial layer during formation of a capacitor
02/20/2003US20030034513 Methods of forming a capacitor structure
02/20/2003US20030034511 FLASH memory circuitry
02/20/2003US20030034510 Memory array architectures based on a triple-polysilicon source-side injection non-volatile memory cell
02/20/2003US20030034504 Semiconductor device, semiconductor integrated circuit, and method for manufacturing semiconductor device
02/20/2003US20030034500 Semiconductor structure including a zintl material buffer layer, device including the structure, and method of forming the structure and device
02/20/2003US20030034499 Method of manufacture for 80 nanometer diameter resonant tunneling diode with improved peak-to- valley ratio and resonant tunneling diode therefrom
02/20/2003US20030034495 Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation
02/20/2003US20030034492 Semiconductor device and liquid crystal display device
02/20/2003US20030034491 Structure and method for fabricating semiconductor structures and devices for detecting an object
02/20/2003CA2456662A1 High electron mobility devices
02/19/2003EP1284507A2 MOS type semiconductor device
02/19/2003EP1284502A1 Device having resin package and method of producing the same
02/19/2003EP1284501A1 Device having resin package and method of producing the same
02/19/2003EP1284496A1 Junction field-effect transistor and method of manufacture thereof
02/19/2003EP1284433A2 Transflective liquid crystal display and method for manufacturing the same
02/19/2003EP1284021A1 Fabrication of low leakage-current backside illuminated photodiodes
02/19/2003EP1284020A2 Semiconductor structures for hemt
02/19/2003EP1284019A2 Semiconductor power component
02/19/2003EP1284014A1 Technique for suppression of edge current in semiconductor devices
02/19/2003EP1284013A2 Method for forming high quality multiple thickness oxide layers by reducing descum induced defects
02/19/2003EP1284012A1 Method for substrate noise distribution
02/19/2003EP0863553B1 Semiconductor device and production method thereof
02/19/2003EP0752121B1 Methods of fabricating active matrix pixel electrodes
02/19/2003CN1398432A Bipolar transistor and method of manufacture thereof
02/19/2003CN1398430A Semiconductor devices
02/19/2003CN1398429A Communicating device
02/19/2003CN1398423A Process for forming semiconductor structure
02/19/2003CN1398407A 半导体集成电路器件 The semiconductor integrated circuit device
02/19/2003CN1398359A Liquid crystal displays
02/19/2003CN1398007A Organic semiconductor device and its mfg. technique
02/19/2003CN1398005A Semiconductor device and its mfg. method
02/19/2003CN1398004A Sandwith FET containing organic semiconductor and its preparing process
02/19/2003CN1398002A Semiconductor component and semiconductor storage
02/19/2003CN1397995A Process for preparing thin film transistor and its structure
02/19/2003CN1397984A Semiconductor device and stripping method and method for mfg. semiconductor device
02/19/2003CN1397830A Method of mfg. active matrix base plate
02/19/2003CN1397829A Array base palte of liquid crystal display and mfg. thereof
02/18/2003US6523153 Method of design verification for integrated circuit system and method for generating interface model for design verification
02/18/2003US6523132 Flash EEprom system
02/18/2003US6523010 Assistance method and apparatus
02/18/2003US6522585 Dual-cell soft programming for virtual-ground memory arrays
02/18/2003US6522580 Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
02/18/2003US6522370 Liquid crystal display units
02/18/2003US6522369 Liquid crystal display device
02/18/2003US6522358 Charge transfer device and method of driving the charge transfer device
02/18/2003US6522203 Power amplifying transistors
02/18/2003US6522164 Switching circuit
02/18/2003US6522079 Electroluminescence display device
02/18/2003US6522066 Pixel structure of an organic light-emitting diode display device and its fabrication method
02/18/2003US6522012 Semiconductor device with HIHG resistivity
02/18/2003US6522011 Low capacitance wiring layout and method for making same
02/18/2003US6522007 Semiconductor device having dummy patterns for metal CMP
02/18/2003US6522002 Semiconductor device and method of manufacturing the same
02/18/2003US6521998 Electrode structure for nitride III-V compound semiconductor devices
02/18/2003US6521977 Deuterium reservoirs and ingress paths
02/18/2003US6521974 Bipolar transistor and manufacturing method thereof
02/18/2003US6521973 Semiconductor device with integrated power transistor and suppression diode
02/18/2003US6521966 Semiconductor strain sensor
02/18/2003US6521964 Device having spacers for improved salicide resistance on polysilicon gates
02/18/2003US6521963 Semiconductor device and method of manufacturing semiconductor device
02/18/2003US6521962 High voltage MOS devices
02/18/2003US6521961 Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor
02/18/2003US6521959 SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
02/18/2003US6521957 Method for forming a multilevel ROM memory in a dual gate CMOS process, and corresponding ROM memory cell
02/18/2003US6521956 Semiconductor device having contact of Si-Ge combined with cobalt silicide
02/18/2003US6521955 Semiconductor device including memory cells and manufacturing method thereof
02/18/2003US6521954 Semiconductor device and manufacturing method thereof
02/18/2003US6521949 SOI transistor with polysilicon seed
02/18/2003US6521948 SOI-structure MIS field-effect transistor with gate contacting body region
02/18/2003US6521947 Method of integrating substrate contact on SOI wafers with STI process
02/18/2003US6521946 Electrostatic discharge resistant extended drain metal oxide semiconductor transistor
02/18/2003US6521945 Method and composite for decreasing charge leakage