Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2003
03/27/2003US20030057502 Semiconductor device
03/27/2003US20030057501 Semiconductor device and method of manufacturing the same
03/27/2003US20030057497 Semiconductor device
03/27/2003US20030057493 Semiconductor device and manufacturing method therefor
03/27/2003US20030057491 Semiconductor device and method of manufacturing the same
03/27/2003US20030057489 Method for manufacturing semiconductor substrate, semiconductor substrate, electrooptic device and electronic apparatus
03/27/2003US20030057488 Potential clamping region for connecting second semiconductor layer with first semiconductor layer is formed in insulation layer in order to fix potential of body portion to potential of first semiconductor layer
03/27/2003US20030057486 Fin field effect transistor with self-aligned gate
03/27/2003US20030057485 High-voltage periphery
03/27/2003US20030057482 Semiconductor device and method for manufacturing thereof
03/27/2003US20030057480 Voltage-controlled vertical bidirectional monolithic switch
03/27/2003US20030057479 Vertical high-voltage semiconductor component
03/27/2003US20030057478 Mos-gated power semiconductor device
03/27/2003US20030057477 CMOS integrated circuit having vertical transistors and a process for fabricating same
03/27/2003US20030057476 Semiconductor device
03/27/2003US20030057475 Non-volatile semiconductor memory device
03/27/2003US20030057474 Method of operation of a dual-bit double-polysilicon source-side injection flash EEPROM cell
03/27/2003US20030057473 Nonvolatile semiconductor memory device
03/27/2003US20030057466 Semiconductor device
03/27/2003US20030057465 Method and structure for modular, highly linear MOS capacitors using nitrogen implantation
03/27/2003US20030057460 High-voltage MOS transistor
03/27/2003US20030057459 High current field-effect transistor
03/27/2003US20030057458 Bipolar device having shallow junction raised extrinsic base and method for making the same
03/27/2003US20030057455 SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
03/27/2003US20030057450 Semiconductor device
03/27/2003US20030057447 Acceleration sensor
03/27/2003US20030057442 Production of single-pole components
03/27/2003US20030057441 Four-terminal system for reading the state of a phase qubit
03/27/2003US20030057440 Heterojunction field effect transistor
03/27/2003US20030057439 Dual layer CMOS devices
03/27/2003US20030057437 Compound semiconductor epitaxial wafer and devices using the same
03/27/2003US20030057432 Ultrathin high-k gate dielectric with favorable interface properties for improved semiconductor device performance
03/27/2003US20030057429 Radio frequency (RF) wireless integrated circuits including a transmit chip having a power amplifier and a receive chip adapted to work with the trasmit chip
03/27/2003US20030057425 Active matrix display device
03/27/2003US20030057424 Thin-film transistor
03/27/2003US20030057423 Three-dimensional device
03/27/2003US20030057419 Semiconductor device comprising a thin film transistor and method of manufacuring the same
03/27/2003US20030057416 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
03/27/2003US20030057415 Quantum logic gate and quantum logic operation method using exciton
03/27/2003US20030057376 X-ray image sensing device
03/27/2003US20030056598 Pressure sensor and pressure-measuring apparatus
03/27/2003CA2454310A1 Gallium nitride based diodes with low forward voltage and low reverse current operation
03/26/2003EP1296380A1 Variable capacitance capacitor
03/26/2003EP1296379A2 Schottky barrier diode and method for manufacturing it
03/26/2003EP1296378A1 MOS semiconductor device and manufacturing process thereof
03/26/2003EP1296366A2 Metal gate CMOS and method of manfacturing the same
03/26/2003EP1296151A1 Collecting RF input and output and biasing signal data
03/26/2003EP1295384A1 Electronic microcomponent, sensor and actuator incorporating same
03/26/2003EP1295343A2 Power mosfet and method of making the same
03/26/2003EP1295342A1 Field effect device
03/26/2003EP1295326A1 Silicon bipolar transistor, circuit arrangement and method for production of a silicon bipolar transistor
03/26/2003EP1295318A2 Crystal structure control of polycrystalline silicon in a single wafer chamber
03/26/2003EP0944916B1 Very long and highly stable atomic wires and method for making these wires
03/26/2003CN1406393A Semiconductor device and its manufacture method
03/26/2003CN1405899A ZnO Schottky diode
03/26/2003CN1405898A 薄膜晶体管及矩阵显示装置 Matrix thin film transistor and a display device
03/26/2003CN1405897A Power semiconducter device with RESURF layer
03/26/2003CN1405896A Semiconductor device and manufacture method thereof
03/26/2003CN1405895A Semiconductor device and manufacture method thereof
03/26/2003CN1405894A Semiconductor device structure and its producing method
03/26/2003CN1405887A 半导体器件 Semiconductor devices
03/26/2003CN1405880A Semiconductor device manufacture method
03/26/2003CN1405866A Transistor with super-short grating characteristic and storage device unit and their producing method
03/26/2003CN1405805A Capacitor, semiconductor device and its manufacture method, electrooptical device and electronic machine
03/26/2003CN1405778A Semi-conductor storage device
03/26/2003CN1405750A Unit circuit, electronic circuit, electronic apparatus, photoelectric apparatus, driving method and electronic machine thereof
03/26/2003CN1104087C Active rectifier having minimal energy losses
03/26/2003CN1104043C MOS gated device with self aligned cells and manufacture process thereof
03/26/2003CN1104010C Method for programming nonvolatile memory unit
03/25/2003US6538937 Nonvolatile semiconductor memory test circuit and method, nonvolatile semiconductor memory and method for fabricating nonvolatile semiconductor memory
03/25/2003US6538927 Semiconductor storage device and production method thereof
03/25/2003US6538926 Nonvolatile semiconductor memory system with capability of starting a new program operation while an existing program operation is being performed
03/25/2003US6538708 Liquid crystal display with static discharge circuit
03/25/2003US6538632 Thin film transistor circuit and a semiconductor display device using the same
03/25/2003US6538390 Organic LED display device of active matrix drive type and fabrication method therefor
03/25/2003US6538328 Structure including metal film formed on entire surface of front face, film including external gold layer resistant to reactive agent and forming protective layer against etching of at least one zone by potassium hydroxide reactive agent
03/25/2003US6538299 Silicon-on-insulator (SOI) trench photodiode
03/25/2003US6538294 Trenched semiconductor device with high breakdown voltage
03/25/2003US6538292 Twin bit cell flash memory device
03/25/2003US6538291 Input protection circuit
03/25/2003US6538290 Static protection device
03/25/2003US6538289 Smart power component
03/25/2003US6538284 SOI device with body recombination region, and method
03/25/2003US6538281 Low on-resistance LDMOS
03/25/2003US6538280 Trenched semiconductor device and method of fabricating the same
03/25/2003US6538277 Split-gate flash cell
03/25/2003US6538276 Split gate flash memory device with shrunken cell and source line array dimensions
03/25/2003US6538275 Nonvolatile semiconductor memory device and method for fabricating the same
03/25/2003US6538273 Ferroelectric transistor and method for fabricating it
03/25/2003US6538268 Semiconductor device and method of producing the same
03/25/2003US6538266 Protection device with a silicon-controlled rectifier
03/25/2003US6537938 A glass to be anodically bonded to a silicon crystal substrate and which contains substantially no Na2O and contains from 4 to 8 mol % of Li2O and from 3 to 9 mol % of B2O3, which is an aluminosilicate
03/25/2003US6537921 Vertical metal oxide silicon field effect semiconductor diodes
03/25/2003US6537920 Formation of vertical transistors using block copolymer lithography
03/25/2003US6537909 Method of preventing silicide spiking
03/25/2003US6537906 Methods for fabricating semiconductor devices
03/25/2003US6537901 Method of manufacturing a transistor in a semiconductor device
03/25/2003US6537899 Semiconductor device and a method of fabricating the same
03/25/2003US6537890 Poly-silicon thin film transistor having back bias effects and fabrication method thereof
03/25/2003US6537888 Method for fabricating a semiconductor device reducing junction leakage current and narrow width effect