Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2003
03/19/2003EP1294024A2 Semiconductor device
03/19/2003EP1294016A1 Formation of self-organized stacked islands for self-aligned contacts of low dimensional structures
03/19/2003EP1293987A1 Nonvolatile semiconductor memory device and method of manufacturing the same
03/19/2003EP1293788A2 Integrated semiconductor device
03/19/2003EP1292991A1 Vertical mos transistor with buried gate and method for making same
03/19/2003EP1292990A2 Trench mosfet with double-diffused body profile
03/19/2003EP1292989A1 A semiconductor device
03/19/2003EP1292984A1 Damascene architecture electronic storage and method for making same
03/19/2003EP1292982A2 Gate oxidation for vertical trench device
03/19/2003EP1292979A2 Method and apparatus for a direct buried strap for same level interconnections for semiconductor devices
03/19/2003EP1292974A1 Method for making an electronic component with self-aligned drain and gate, in damascene architecture
03/19/2003EP1292648A2 Heterostructure with rear-face donor doping
03/19/2003EP1292529A1 Vertical transistor comprising a mobile gate and a method for the production thereof
03/19/2003EP1137826B1 Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same
03/19/2003EP0812470B1 A method of manufacturing a self-aligned vertical bipolar transistor on an soi
03/19/2003EP0746905B1 A power semiconductor switch
03/19/2003CN1404626A A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device
03/19/2003CN1404192A Method for forming third main group nitride semiconductor layer and semiconductor device
03/19/2003CN1404161A Semiconductor element with channel isolating structure
03/19/2003CN1404160A Thin membrane transistor and producing method thereof
03/19/2003CN1404159A SCR with base triggering effect
03/19/2003CN1404152A Nonvolatile semiconductor storage and its producing method and operating method
03/19/2003CN1404150A Semiconductor storage unit and semiconductor memory
03/19/2003CN1404149A Semiconductor device with electrostatic discharge protective circuit
03/19/2003CN1404143A Semiconductor device
03/19/2003CN1404142A Method for producing semiconductor substrate, semiconductor substrate, electrooptical apparatus and electronic equipment
03/19/2003CN1404119A Method for metering metal oxide semi-conductor field effect transistor threshold voltage
03/19/2003CN1404101A Semiconductor and producing method thereof
03/19/2003CN1403860A Liquid crystal display
03/19/2003CN1103494C Producing method of semi-conductor
03/18/2003US6534998 Semiconductor device and control method thereof
03/18/2003US6534948 Motor driving circuit, a method for driving a motor, and a semiconductor integrated circuit device
03/18/2003US6534871 Device including an epitaxial nickel silicide on (100) Si or stable nickel silicide on amorphous Si and a method of fabricating the same
03/18/2003US6534857 Thermally balanced power transistor
03/18/2003US6534845 Semiconductor device
03/18/2003US6534840 Semiconductor device having self-aligned structure
03/18/2003US6534839 Nanomechanical switches and circuits
03/18/2003US6534836 MOSFET semiconductor device
03/18/2003US6534834 Polysilicon bounded snapback device
03/18/2003US6534832 Display device and glass member and substrate member having film comprising aluminum, nitrogen and oxygen
03/18/2003US6534831 Semiconductor integrated circuit device
03/18/2003US6534830 Low impedance VDMOS semiconductor component
03/18/2003US6534829 Semiconductor device and method for fabricating the same
03/18/2003US6534828 Integrated circuit device including a deep well region and associated methods
03/18/2003US6534827 MOS transistor
03/18/2003US6534826 Semiconductor device and manufacturing method thereof
03/18/2003US6534825 Power MOS device with improved gate charge performance
03/18/2003US6534823 Semiconductor device
03/18/2003US6534822 Silicon on insulator field effect transistor with a double Schottky gate structure
03/18/2003US6534817 Contactless channel write/erase flash memory cell and its fabrication method
03/18/2003US6534816 Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell
03/18/2003US6534812 Memory cell with stored charge on its gate and a resistance element having non-linear resistance elements
03/18/2003US6534802 Method for reducing base to collector capacitance and related structure
03/18/2003US6534801 GaN-based high electron mobility transistor
03/18/2003US6534790 Compound semiconductor field effect transistor
03/18/2003US6534789 Thin film transistor matrix having TFT with LDD regions
03/18/2003US6534788 Thin film transistor having dual gate structure and a fabricating method thereof
03/18/2003US6534787 Asymmetrical MOS channel structure with drain extension
03/18/2003US6534785 Reduced terminal testing system
03/18/2003US6534784 Metal-oxide electron tunneling device for solar energy conversion
03/18/2003US6534781 Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
03/18/2003US6534430 Material for measuring static and dynamic physical parameters
03/18/2003US6534421 Method to fabricate thin insulating film
03/18/2003US6534418 Use of silicon containing imaging layer to define sub-resolution gate structures
03/18/2003US6534413 Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch
03/18/2003US6534405 Method of forming a MOSFET device featuring a dual salicide process
03/18/2003US6534402 Method of fabricating self-aligned silicide
03/18/2003US6534401 Method for selectively oxidizing a silicon/metal composite film stack
03/18/2003US6534400 Method for depositing a tungsten silicide layer
03/18/2003US6534395 Method of forming graded thin films using alternating pulses of vapor phase reactants
03/18/2003US6534388 Method to reduce variation in LDD series resistance
03/18/2003US6534373 MOS transistor with reduced floating body effect
03/18/2003US6534371 C implants for improved SiGe bipolar yield
03/18/2003US6534370 Method for fabricating a semiconductor device having an elevated source/drain scheme
03/18/2003US6534369 Field effect transistor and method of fabrication
03/18/2003US6534367 Trench-gate semiconductor devices and their manufacture
03/18/2003US6534366 Method of fabricating trench-gated power MOSFET
03/18/2003US6534365 Method of fabricating TDMOS device using self-align technique
03/18/2003US6534364 Tunnel diode layout for an EEPROM cell for protecting the tunnel diode region
03/18/2003US6534355 Method of manufacturing a flash memory having a select transistor
03/18/2003US6534353 Method of fabricating a thin-film transistor
03/18/2003US6534352 Method for fabricating a MOSFET device
03/18/2003US6534351 Gate-controlled, graded-extension device for deep sub-micron ultra-high-performance devices
03/18/2003US6534350 Method for fabricating a low temperature polysilicon thin film transistor incorporating channel passivation step
03/18/2003US6534349 Method of manufacturing a semiconductor device having a two-layered electrode structure
03/18/2003US6534348 Ultrascaled MIS transistors fabricated using silicon-on-lattice-matched insulator approach
03/18/2003US6534347 Edge termination for silicon power devices
03/18/2003US6534335 Optimized low leakage diodes, including photodiodes
03/18/2003US6534329 Coating a self-supporting polymer with radiation transparent conductive layer
03/18/2003US6534326 Method of minimizing leakage current and improving breakdown voltage of polycrystalline memory thin films
03/18/2003US6533391 Self-aligned modules for a page wide printhead
03/18/2003CA2208762C Flat panel imaging system
03/13/2003WO2003021783A2 Method and system for systematic adjustments in high-speed nonstandard fet circuits
03/13/2003WO2003021737A1 An arrangement for esd protection of an integrated circuit
03/13/2003WO2003021692A2 Mutliple layer phase-change memory
03/13/2003WO2003021690A2 Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate
03/13/2003WO2003021685A1 Semiconductor device and production method thereof
03/13/2003WO2003021684A1 Method for producing a semiconductor device having an edge structure
03/13/2003WO2003021683A1 Semiconductor device and its manufacturing method
03/13/2003WO2003021676A2 Connecting the emitter contacts of a semiconductor device
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