| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/17/2003 | CA2454269A1 Insulating gate algan/gan hemt |
| 04/16/2003 | EP1302987A1 Trench-gated vertical MOSFET having gate oxide layer containing cesium and process of forming the same |
| 04/16/2003 | EP1302978A2 Method of making a self-aligned ferroelectric memory transistor |
| 04/16/2003 | EP1302977A2 Method for producing group III nitride compound semiconductor |
| 04/16/2003 | EP1302976A1 Single crystal wafer and solar battery cell |
| 04/16/2003 | EP1302962A1 Quantum size effect type micro electron gun and flat display unit using it and method for manufacturing the same |
| 04/16/2003 | EP1302950A2 Electrically conducting organic compound and electronic device |
| 04/16/2003 | EP1302949A2 Electrically conductive organic compound and electronic device |
| 04/16/2003 | EP1302810A2 Photosemiconductor device and method for fabricating the same |
| 04/16/2003 | EP1302772A1 Acceleration switch |
| 04/16/2003 | EP1301950A1 Method for the production and configuration of organic field-effect transistors (ofet) |
| 04/16/2003 | EP1166174B1 Active matrix substrate for liquid crystal display and method for making the same |
| 04/16/2003 | EP0912185B1 Novel pharmaceutical compositions having steroid nitrate ester derivatives useful as anti-inflammatory drugs |
| 04/16/2003 | CN1411611A Metal-insulator-metal capacitor and method for producing same |
| 04/16/2003 | CN1411609A Matrix array display devices with light sensing elements |
| 04/16/2003 | CN1411602A Method to provide reduced constant E-field during erase of EEPROM for reliability improvement |
| 04/16/2003 | CN1411266A Image sensor and reader |
| 04/16/2003 | CN1411076A Semiconductor device and mfg. method thereof |
| 04/16/2003 | CN1411075A 半导体装置 Semiconductor device |
| 04/16/2003 | CN1411051A Method for mfg. semiconductor device and structure thereof |
| 04/16/2003 | CN1411042A Threshold valtage regulating method for ultrathin epitaxial silicon metal oxide semiconductor transistor based on insulator |
| 04/16/2003 | CN1411036A Mathod of manufacturing semi conductor device having composite buffer layer |
| 04/16/2003 | CN1410804A Electrooptics device, mfg. method and electronic apparatus thereof |
| 04/16/2003 | CN1106044C Thin film transistor for antistatic circuit and method for fabricating same |
| 04/16/2003 | CN1106042C Method of forming floating gate in flash memory device |
| 04/16/2003 | CN1105908C Micromechanical sensor |
| 04/15/2003 | US6550039 Circuit design method for designing conductive members with a multilayered structure to have antenna sized of proper values |
| 04/15/2003 | US6549889 Assistance method and apparatus |
| 04/15/2003 | US6549465 Nonvolatile semiconductor memory well voltage setting circuit without latchup and semiconductor memory device provided with the circuit |
| 04/15/2003 | US6549463 Fast program to program verify method |
| 04/15/2003 | US6548903 Semiconductor integrated circuit |
| 04/15/2003 | US6548890 Press-contact type semiconductor device |
| 04/15/2003 | US6548882 Power transistor cell |
| 04/15/2003 | US6548877 Metal oxide semiconductor field effect transistor for reducing resistance between source and drain |
| 04/15/2003 | US6548876 Semiconductor device of sub-micron or high voltage CMOS structure and method for manufacturing the same |
| 04/15/2003 | US6548875 Sub-tenth micron misfet with source and drain layers formed over source and drains, sloping away from the gate |
| 04/15/2003 | US6548874 Higher voltage transistors for sub micron CMOS processes |
| 04/15/2003 | US6548873 Semiconductor device and manufacturing method of the same |
| 04/15/2003 | US6548871 Semiconductor device achieving reduced wiring length and reduced wiring delay by forming first layer wiring and gate upper electrode in same wire layer |
| 04/15/2003 | US6548870 Semiconductor device |
| 04/15/2003 | US6548867 Semiconductor device having thin film transistor for supplying current to driven element |
| 04/15/2003 | US6548866 Field effect transistor with reduced narrow channel effect |
| 04/15/2003 | US6548865 High breakdown voltage MOS type semiconductor apparatus |
| 04/15/2003 | US6548864 High density MOS technology power device |
| 04/15/2003 | US6548863 Lateral DMOS transistor integratable in semiconductor power devices |
| 04/15/2003 | US6548862 Structure of semiconductor device and method for manufacturing the same |
| 04/15/2003 | US6548861 Memory cell, memory cell arrangement and fabrication method |
| 04/15/2003 | US6548860 DMOS transistor structure having improved performance |
| 04/15/2003 | US6548859 MOS semiconductor device and method of manufacturing the same |
| 04/15/2003 | US6548854 Compound, high-K, gate and capacitor insulator layer |
| 04/15/2003 | US6548847 Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal film |
| 04/15/2003 | US6548842 Field-effect transistor for alleviating short-channel effects |
| 04/15/2003 | US6548840 Monolithic temperature compensation scheme for field effect transistor integrated circuits |
| 04/15/2003 | US6548839 LDMOS transistor structure using a drain ring with a checkerboard pattern for improved hot carrier reliability |
| 04/15/2003 | US6548838 Field-effect transistor, bipolar transistor, and methods of fabricating the same |
| 04/15/2003 | US6548831 For removing an etching stopper layer on an intersection portion of gate line without additional exposure; photoresists |
| 04/15/2003 | US6548830 Semiconductor device formed of single crystal grains in a grid pattern |
| 04/15/2003 | US6548829 Thin-film transistor |
| 04/15/2003 | US6548828 Thin-film transistor and method of manufacturing thin-film transistor with tapered gate of 20 degrees or less |
| 04/15/2003 | US6548825 Semiconductor device including barrier layer having dispersed particles |
| 04/15/2003 | US6548424 Process for producing oxide thin films |
| 04/15/2003 | US6548422 Method and structure for oxide/silicon nitride interface substructure improvements |
| 04/15/2003 | US6548421 Method for forming a refractory-metal-silicide layer in a semiconductor device |
| 04/15/2003 | US6548403 Silicon oxide liner for reduced nickel silicide bridging |
| 04/15/2003 | US6548388 Semiconductor device including gate electrode having damascene structure and method of fabricating the same |
| 04/15/2003 | US6548380 Semiconductor thin film, semiconductor device employing the same, methods for manufacturing the same and device for manufacturing a semiconductor thin film |
| 04/15/2003 | US6548370 Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces |
| 04/15/2003 | US6548366 Method of two-step annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile |
| 04/15/2003 | US6548364 Self-aligned SiGe HBT BiCMOS on SOI substrate and method of fabricating the same |
| 04/15/2003 | US6548363 Method to reduce the gate induced drain leakage current in CMOS devices |
| 04/15/2003 | US6548362 Method of forming MOSFET with buried contact and air-gap gate structure |
| 04/15/2003 | US6548361 SOI MOSFET and method of fabrication |
| 04/15/2003 | US6548356 Thin film transistor |
| 04/15/2003 | US6548354 Process for producing a semiconductor memory device comprising mass-storage memory cells and shielded memory cells for storing reserved information |
| 04/15/2003 | US6548353 Method of making nonvolatile memory device having reduced capacitance between floating gate and substrate |
| 04/15/2003 | US6548352 Multi-layered gate for a CMOS imager |
| 04/15/2003 | US6548342 Method of producing oxide dielectric element, and memory and semiconductor device using the element |
| 04/15/2003 | US6548341 Process for producing a first electrode and a second electrode, electronic component and electronic memory element |
| 04/15/2003 | US6548339 Methods of forming memory circuitry, and method of forming dynamic random access memory (DRAM) circuitry |
| 04/15/2003 | US6548333 Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment |
| 04/15/2003 | US6548332 Thermal treatment process for forming thin film transistors without the use of plasma treatment to further improve the output property of the thin film transistor |
| 04/15/2003 | US6548331 Method for fabricating thin film transistor including crystalline silicon active layer |
| 04/15/2003 | US6548325 Wafer thickness compensation for interchip planarity |
| 04/15/2003 | US6546799 Method for compensating the position offset of a capacitive inertial sensor, and capacitive inertial sensor |
| 04/10/2003 | WO2003030278A2 Composition, method and electronic device |
| 04/10/2003 | WO2003030268A1 Flash memory cell with entrenched floating gate and method for operating said flash memory cell |
| 04/10/2003 | WO2003030267A2 Umosfet device and method of making the same |
| 04/10/2003 | WO2003030266A1 Transistor with an electron and a vertical channel and the production methods thereof |
| 04/10/2003 | WO2003030265A1 Switching device |
| 04/10/2003 | WO2003030264A1 Non volatile memory cell structure using multilevel trapping dielectric |
| 04/10/2003 | WO2003030262A2 Silicon-on-insulator high voltage device structure |
| 04/10/2003 | WO2003030258A1 Plural semiconductor devices in monolithic flip chip |
| 04/10/2003 | WO2003030253A2 Salicided gate for virtual ground arrays |
| 04/10/2003 | WO2003030245A2 Method for assembly of complementary-shaped receptacle site and device microstructures |
| 04/10/2003 | WO2003030244A1 Method for fabricating a power semiconductor device having a floating island voltage sustaining layer |
| 04/10/2003 | WO2003030243A1 Incorporation of nitrogen into high k dielectric film |
| 04/10/2003 | WO2003030242A1 Method of forming dielectric films |
| 04/10/2003 | WO2003030220A2 Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands |
| 04/10/2003 | WO2003029510A1 Aluminum alloy thin film and wiring circuit having the thin film and target material for forming the tin film |
| 04/10/2003 | WO2003029431A2 Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus |