Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2003
05/01/2003US20030080384 Semiconductor substrate, semiconductor device and method for fabricating the same
05/01/2003US20030080383 Active well schemes for SOI technology
05/01/2003US20030080382 Semiconductor device
05/01/2003US20030080381 Semiconductor component and method of operation
05/01/2003US20030080380 Field effect transistor on insulating layer and manufacturing method
05/01/2003US20030080379 Semiconductor device and method for manufacturing the same
05/01/2003US20030080378 Semiconductor component, trench structure transistor, trench MOSFET, IGBT, and field-plate transistor
05/01/2003US20030080377 Quick punch through IGBT having gate-controllable di/dt and reduced EMI during inductive turn off
05/01/2003US20030080376 Transistor device
05/01/2003US20030080375 Semiconductor device and method of manufacturing the same
05/01/2003US20030080374 Non-volatile semiconductor memory device and manufacturing method thereof
05/01/2003US20030080373 Nonvolatile memory device and fabricating method thereof
05/01/2003US20030080372 Semiconductor memory cell, method for fabricating the memory cell, and semiconductor memory device
05/01/2003US20030080370 Utilizing dielectric material positioned within memory cells for non-volatile charge storage that affect an operating parameter of the individual memory cells according to a level of charge stored in at least one common region thereof
05/01/2003US20030080362 Devices and methods for integrated circuit manufacturing
05/01/2003US20030080361 P-channel metal oxide semiconductor (MOS) field effect transistors; integrated circuits
05/01/2003US20030080359 Structure with through hole, production method thereof, and liquid discharge head
05/01/2003US20030080356 Semiconductor memory having storage cells storing multiple bits and a method of manufacturing the same
05/01/2003US20030080355 Semiconductor device
05/01/2003US20030080354 Method for manufacturing semiconductor device, and semiconductor device
05/01/2003US20030080352 Mosfet structure with reduced junction capacitance
05/01/2003US20030080351 Trench DMOS device with improved drain contact
05/01/2003US20030080350 Silicon-on-insulator diodes and ESD protection circuits
05/01/2003US20030080349 Power amplifier with base and collector straps
05/01/2003US20030080348 Heterojunction field-effect transistor
05/01/2003US20030080347 Method for manufacturing heterojunction field effect transistor device
05/01/2003US20030080346 Vertical transistor and transistor fabrication method
05/01/2003US20030080337 System and method for manufacturing a thin film transistor
05/01/2003US20030080332 Charge carrier extracting transistor
05/01/2003US20030080331 3-5 Group compound semiconductor and semiconductor device
05/01/2003US20030080316 Semiconductor device
05/01/2003US20030079677 Method for fabricating a semiconductor epitaxial wafer having doped carbon and a semiconductor epitaxial wafer
05/01/2003US20030079540 Control gate decoder for twin MONOS memory with two bit erase capability
05/01/2003CA2464110A1 Delta doped silicon carbide metal-semiconductor field effect transistors and methods of fabricating them
04/2003
04/30/2003CN1415118A 逆变器 Inverter
04/30/2003CN1415116A Spacer process to eliminate isolation trench corner transistor device
04/30/2003CN1414705A Equipment and method of insulator epitaxial silicon transistor used in programmable logic device
04/30/2003CN1414640A Biperpendicular passage film electric crystal body and its manufacturing method
04/30/2003CN1414637A Nonvolatile semiconductor memory and its manufacturing method
04/30/2003CN1414634A 半导体集成电路 The semiconductor integrated circuit
04/30/2003CN1414633A Electronic electrostatic discharge protection device and its manufacturing method
04/30/2003CN1414627A Periphery of high-voltage element
04/30/2003CN1414620A Manufacturing method of semiconductor device
04/30/2003CN1414617A Method for forming MOS device on silicon substrate
04/30/2003CN1414616A Laser ennealing equipment, TFT device and corresponding ennealing method
04/30/2003CN1414605A Semiconductor substrate, semiconductor element and its manufacturing method
04/30/2003CN1414581A Film for film capacitor and film capacitor
04/30/2003CN1414566A Method for reducing coupling effect between nonvolatile memory storage cell
04/30/2003CN1414563A Semiconductor device
04/30/2003CN1414423A Plane display device panel
04/30/2003CN1107351C Nonvolatile semiconductor memory and method of fabrication
04/30/2003CN1107344C Fabrication method of semiconductor device using selective epitaxial growth
04/30/2003CN1107340C Method for forming self-aligned contact in semiconductor device
04/30/2003CN1107339C Laminate for forming ohmic electrode and ohmic electrode
04/30/2003CN1107322C Nonvolatile memory and its method of programming
04/30/2003CN1107321C Multi-valued, fixed value storage location with improved signal-to noise ratio
04/29/2003US6556479 Nonvolatile semiconductor memory device
04/29/2003US6556475 Non-volatile memory and semiconductor device
04/29/2003US6556264 Prevents lowering of contrast and diffused reflection of light; chemical mechanical polishing; electrooptics; efficiency; performance
04/29/2003US6555913 Electronic component having a coil conductor with photosensitive conductive paste
04/29/2003US6555907 High-frequency integrated circuit and high-frequency circuit device using the same
04/29/2003US6555901 Semiconductor device including eutectic bonding portion and method for manufacturing the same
04/29/2003US6555895 Devices and methods for addressing optical edge effects in connection with etched trenches
04/29/2003US6555894 Device with patterned wells and method for forming same
04/29/2003US6555892 Semiconductor device with reduced line-to-line capacitance and cross talk noise
04/29/2003US6555887 Semiconductor device with multi-layer interconnection
04/29/2003US6555885 Semiconductor device and method of manufacturing the same
04/29/2003US6555884 Semiconductor device for providing a noise shield
04/29/2003US6555883 Lateral power MOSFET for high switching speeds
04/29/2003US6555882 Semiconductor element and semiconductor memory device using the same
04/29/2003US6555879 SOI device with metal source/drain and method of fabrication
04/29/2003US6555878 Umos-like gate-controlled thyristor structure for ESD protection
04/29/2003US6555877 NMOSFET with negative voltage capability formed in P-type substrate and method of making the same
04/29/2003US6555876 Thin film transistor array substrate having laser illumination indicator
04/29/2003US6555875 EL display device with a TFT
04/29/2003US6555874 Method of fabricating high performance SiGe heterojunction bipolar transistor BiCMOS on a silicon-on-insulator substrate
04/29/2003US6555873 High-voltage lateral transistor with a multi-layered extended drain structure
04/29/2003US6555872 Trench gate fermi-threshold field effect transistors
04/29/2003US6555871 Flash memory device having a bipolar transistor formed integral thereto and a method of manufacture therefor
04/29/2003US6555870 Nonvolatile semiconductor memory device and method for producing same
04/29/2003US6555869 Non-volatile memory device and method of manufacturing the same
04/29/2003US6555868 Semiconductor device and method of manufacturing the same
04/29/2003US6555867 Systems for improving gate coupling in flash memory elements
04/29/2003US6555865 Nonvolatile semiconductor memory device with a multi-layer sidewall spacer structure and method for manufacturing the same
04/29/2003US6555864 Ferroelectric capacitor having a PZT layer with an excess of Pb
04/29/2003US6555861 Semiconductor integrated circuit device and process for manufacturing the same
04/29/2003US6555860 Compositionally modified resistive electrode
04/29/2003US6555857 Suitable for use to connect electric condenser microphones
04/29/2003US6555852 Bipolar transistor having an emitter comprised of a semi-insulating material
04/29/2003US6555851 High electron mobility transistor
04/29/2003US6555850 Composite channel structure having first channel layer containing gallium indium phosphide semiconductor and second channel layer containing gallium arsenide semiconductor; improves avalanche breakdown voltage of transistor
04/29/2003US6555849 Deactivatable thyristor
04/29/2003US6555848 Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof
04/29/2003US6555847 Nitride based semiconductor light emitting element
04/29/2003US6555844 Semiconductor device with minimal short-channel effects and low bit-line resistance
04/29/2003US6555843 Semiconductor device and method for forming the same
04/29/2003US6555841 Testable substrate and a testing method
04/29/2003US6555840 Charge-transport structures
04/29/2003US6555839 Buried channel strained silicon FET using a supply layer created through ion implantation
04/29/2003US6555759 Interconnect structure
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