Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2003
05/06/2003US6559019 Breakdown drain extended NMOS
05/06/2003US6559017 Method of using amorphous carbon as spacer material in a disposable spacer process
05/06/2003US6559016 Method of manufacturing low-leakage, high-performance device
05/06/2003US6559015 Fabrication of field effect transistor with dual laser thermal anneal processes
05/06/2003US6559014 Preparation of composite high-K / standard-K dielectrics for semiconductor devices
05/06/2003US6559012 Method for manufacturing semiconductor integrated circuit device having floating gate and deposited film
05/06/2003US6559011 Dual level gate process for hot carrier control in double diffused MOS transistors
05/06/2003US6559008 Non-volatile memory cells with selectively formed floating gate
05/06/2003US6559007 Method for forming flash memory device having a tunnel dielectric comprising nitrided oxide
05/06/2003US6558998 SOI type integrated circuit with a decoupling capacity and process for embodiment of such a circuit
05/06/2003US6558997 Method for fabricating the control and floating gate electrodes without having their upper surface silicided
05/06/2003US6558996 Edge structure for relaxing electric field of semiconductor device having an embedded type diffusion structure
05/06/2003US6558995 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots
05/06/2003US6558993 Semiconductor device and method of manufacturing the same
05/06/2003US6558992 Method to fabricate flat panel display
05/06/2003US6558989 Method for crystallizing silicon film and thin film transistor and fabricating method using the same
05/06/2003US6558988 Method for manufacturing crystalline semiconductor thin film and thin film transistor
05/06/2003US6558987 Thin film transistor and method of fabricating the same
05/06/2003US6558986 Method of crystallizing amorphous silicon thin film and method of fabricating polysilicon thin film transistor using the crystallization method
05/06/2003US6558985 Charge coupled device and method of fabricating the same
05/06/2003US6558984 Trench schottky barrier rectifier and method of making the same
05/06/2003US6558983 Semiconductor apparatus and method for manufacturing the same
05/06/2003US6558977 Semiconductor device and method for fabricating the same
05/06/2003US6558008 Method of fabricating a matrix display system
05/06/2003US6557414 Inertia sensor and method of fabricating the same
05/02/2003EP1306905A2 Lateral power MOSFET
05/02/2003EP1306904A2 Controlled conduction device
05/02/2003EP1306903A1 Inverter
05/02/2003EP1306890A2 Semiconductor substrate and device comprising SiC and method for fabricating the same
05/02/2003EP1306889A2 Electronic device with electrode and its manufacture
05/02/2003EP1306862A1 Foil for a capacitor and foil capacitor
05/02/2003EP1306214A2 Print head with shielding element and its manufacturing method
05/02/2003EP1305834A1 Field effect transistor, circuit arrangement and method for production of a field effect transistor
05/02/2003EP1305832A2 Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes
05/02/2003EP1305831A2 Semiconductor device and a process for forming the same
05/02/2003EP1305825A2 Method for producing a multi-bit memory cell
05/02/2003EP1305805A1 Electrically-eraseable programmable read-only memory having reduced-page-size program and erase
05/02/2003EP1305789A1 Active matrix display device
05/02/2003EP1305586A2 Micro-machined absolute pressure sensor
05/02/2003EP1305257A2 A tunneling sensor or switch and a method of making same
05/02/2003EP0946792B1 Production process for a micromechanical building component
05/02/2003EP0780891B1 Method of manufacturing semiconductor device
05/01/2003WO2003036729A1 Delta doped silicon carbide metal-semiconductor field effect transistors and methods of fabricating them
05/01/2003WO2003036728A1 Contact portion of semiconductor device and method for manufacturing the same, and thin film transistor array panel for display device including the contact portion and method for manufacturing the same
05/01/2003WO2003036727A2 Transistor device
05/01/2003WO2003036725A1 Magnetic memory device
05/01/2003WO2003036701A1 Low-temperature post-dopant activation process
05/01/2003WO2003036699A2 Lateral semiconductor-on-insulator structure and corresponding manufacturing methods
05/01/2003WO2003036697A2 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices
05/01/2003WO2003036377A1 A etchant for wires, a method for manufacturing the wires using the etchant, a thin film transistor array substrate and a method for manufacturing the same including the method
05/01/2003WO2003036376A1 A thin film transistor substrate of using insulating layers having low dielectric constant and a method of manufacturing the same
05/01/2003WO2003036374A1 Thin film transistor array panel for liquid crystal display and method for manufacturing the same
05/01/2003WO2003009388A3 Bipolar transistors and high electron mobility transistors
05/01/2003WO2003007304A3 Magnetic memory unit and magnetic memory array
05/01/2003WO2003005414A3 Power mosfet with deep implanted junctions
05/01/2003WO2002101837A3 Lateral pin diode and method for producing the same
05/01/2003WO2002097876A3 Manufacture of trench-gate field-effect transistors
05/01/2003WO2002071410A3 Higher program threshold voltage and faster programming rates based on improved erase methods
05/01/2003WO2002065537A3 Formation of metal oxide gate dielectric
05/01/2003WO2002061821A3 Method of preparing indium phosphide heterojunction bipolar transistors
05/01/2003WO2002045158A3 Memory cell with vertical floating gate transistor
05/01/2003WO2002037561A3 Dual gate oxide process for uniform oxide thickness
05/01/2003US20030082922 Method of fabricating integrated circuit having shallow junction
05/01/2003US20030082909 High-k gate oxides with buffer layers of titanium for MFOS single transistor memory applications
05/01/2003US20030082893 Method of fabricating nitride semiconductor and method of fabricating semiconductor device
05/01/2003US20030082889 Semiconductor device and method of manufacturing the same
05/01/2003US20030082884 Method of forming low-leakage dielectric layer
05/01/2003US20030082882 Control of dopant diffusion from buried layers in bipolar integrated circuits
05/01/2003US20030082881 Method for manufacturing a self-aligned MOS transistor
05/01/2003US20030082880 Low-temperature post-dopant activation process
05/01/2003US20030082879 Non-volatile semiconductor memory device and method of manufacturing the same
05/01/2003US20030082878 Method for manufacturing semiconductor device
05/01/2003US20030082876 Vertical DRAM punchthrough stop self-aligned to storage trench
05/01/2003US20030082872 Fabricating a substantially self-aligned MOSFET
05/01/2003US20030082871 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
05/01/2003US20030082866 Method of manufacturing semiconductor device
05/01/2003US20030082865 Fabrication method of semiconductor integrated circuit device
05/01/2003US20030082862 Method for fabricating a gate layer stack for an integrated circuit configuration
05/01/2003US20030082861 Method for fabricating a MOSFET
05/01/2003US20030082860 Field effect transistor and manufacturing method therefor
05/01/2003US20030082842 On-chip temperature sensor formed of MOS tunneling diode
05/01/2003US20030082839 Method for calculating threshold voltage of pocket implant mosfet
05/01/2003US20030082300 Vapor deposition using silane compound; uniform thickness
05/01/2003US20030081458 Method and device for reading dual bit memory cells using multiple reference cells with two side read
05/01/2003US20030081457 Floating gate memory cell, method for fabricating it, and semiconductor memory device
05/01/2003US20030081456 Charge trapping memory cell, method for fabricating it, and semiconductor memory device
05/01/2003US20030081363 ESD protection device and method of manufacturing the device
05/01/2003US20030080842 Minimizing degradation of SiC bipolar semiconductor devices
05/01/2003US20030080782 Low threshold voltage silicon-on-insulator clock gates
05/01/2003US20030080760 Semiconductor pressure detecting device
05/01/2003US20030080436 Such as personal computer or goggle display; an aperture portion is formed in the dielectric film, the electrode or the semiconductor layer is formed in the aperture portion; achieves smoothing without using special means
05/01/2003US20030080429 Semiconductor device
05/01/2003US20030080427 Multiple layer phase-change memory
05/01/2003US20030080394 Forming collector region of a conductivity type, at semiconducting surface of a body; forming base layer of single-crystal silicon doped to second conductivity type; forming insulating film; forming layer of emitter polysilicon
05/01/2003US20030080391 Magnetic memory device and manufacturing method thereof
05/01/2003US20030080389 Semiconductor device having a dielectric layer with a uniform nitrogen profile
05/01/2003US20030080388 Lateral power mosfet for high switching speeds
05/01/2003US20030080387 CMOS of semiconductor device and method for manufacturing the same
05/01/2003US20030080386 Silicon-on-insulator diodes and ESD protection circuits
05/01/2003US20030080385 Silicon on insulator device and layout method of the same