Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2003
05/15/2003WO2003041184A2 Organic field effect transistors
05/15/2003WO2003041176A2 A scalable flash eeprom memory cell with floating gate spacer wrapped by control gate, and method of manufacturing the same
05/15/2003WO2003041170A1 Surge protection semiconductor device
05/15/2003WO2003041169A2 Thermally balanced power transistor
05/15/2003WO2003041168A1 Silicon on insulator device with improved heat removal and method of manufacture
05/15/2003WO2003041167A1 Semiconductor device comprising low dielectric material film and its production method
05/15/2003WO2003041152A1 Silicon-germanium mesa transistor
05/15/2003WO2003041151A1 Method and device for forming oxide film
05/15/2003WO2003041133A2 Electrothermal self-latching mems switch and method
05/15/2003WO2003041124A2 Method of fabricating a gate stack at low temperature
05/15/2003WO2003041117A2 Integrated semiconductor component for conducting high-frequency measurements and the use thereof
05/15/2003WO2003040821A1 Active matrix pixel device
05/15/2003WO2003040441A1 Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
05/15/2003WO2003040436A1 Method of eliminating voids in w plugs
05/15/2003WO2003040338A2 Micro-scale interconnect device with internal heat spreader and method for fabricating same
05/15/2003WO2002099807A3 Method and apparatus for boosting bitlines for low vcc read
05/15/2003WO2002093662A3 A method of providing a layer including a metal or silicon or germanium and oxygen on a surface
05/15/2003WO2002065530A3 Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics
05/15/2003WO2002065393A3 Optimization method for quantum computing process
05/15/2003WO2002058161A3 Mos device having a trench gate electrode
05/15/2003US20030093711 Flash EEprom system
05/15/2003US20030092287 Process for forming hafnium oxide films
05/15/2003US20030092286 Semiconductor device producing method
05/15/2003US20030092285 Method for manufacturing semiconductor integrated circuit device
05/15/2003US20030092239 Method of fabricating a stacked poly-poly and MOS capacitor using a sige integration scheme
05/15/2003US20030092238 Method of forming insulating film and method of producing semiconductor device
05/15/2003US20030092234 Split-gate flash memory and method of manufacturing the same
05/15/2003US20030092233 Method for manufacturing semiconductor integrated circuit device
05/15/2003US20030092227 Method of forming a quantum dot and a gate electrode using the same
05/15/2003US20030092226 Photoelectric conversion element and method of manufacturing the same
05/15/2003US20030092224 Semiconductor doping method and liquid crystal display device fabricating method using the same
05/15/2003US20030092223 Method for adjusting ultra-thin SOI MOS transistor threshold voltages
05/15/2003US20030092220 Stereolithographic methods of fabricating semiconductor devices having protective layers thereon through which contact pads are exposed
05/15/2003US20030092213 Semiconductor device and method for its fabrication
05/15/2003US20030090941 Flash EEprom system
05/15/2003US20030090612 Liquid crystal display device
05/15/2003US20030090604 Thin film transistor array panel for a liquid crystal display and methods for manufacturing the same
05/15/2003US20030090214 Display apparatus
05/15/2003US20030090002 Semiconductor device and method of manufacturing the same
05/15/2003US20030089999 Semiconductor devices having stereolithographically fabricated protective layers thereon through which contact pads are exposed and assemblies including the same
05/15/2003US20030089991 Light emitting apparatus and method for manufacturing the same
05/15/2003US20030089967 Silicon wafer and fabricating method therefor
05/15/2003US20030089966 IGBT (Insulated Gate Bipolar Transistor) where the pinch-off of the channel is generated in the position closer to the n-type base layer than to the junction between the p-type base layer and the n-type emitter layer
05/15/2003US20030089965 Bipolar transistor circuit and usage method of bipolar transistor
05/15/2003US20030089960 Asymmetric high-voltage metal-oxide-semiconductor device
05/15/2003US20030089959 Schottky barrier diode
05/15/2003US20030089951 ESD (electrostatic discharge) implantation with a lightly-doped concentration in the ESD regions of ESD-protection devices; complementary metal oxide semiconductors (CMOS); protection from ESD damage
05/15/2003US20030089949 Multilayer stack convex structure that can control the reflection angle by the specific taper angle and can effectively control the light reflection direction; less expensive process, saves one photo-masking step
05/15/2003US20030089948 Substrate contact in SOI and method therefor
05/15/2003US20030089947 Power MOSFET device
05/15/2003US20030089946 Trench MOSFET having low gate charge
05/15/2003US20030089945 Mosfet with reduced threshold voltage and on resistance and process for its manufacture
05/15/2003US20030089942 Scalable gate and storage dielectric
05/15/2003US20030089936 Structure and method for embedding capacitors in Z-connected multi-chip modules
05/15/2003US20030089935 Non-volatile semiconductor memory device with multi-layer gate insulating structure
05/15/2003US20030089932 Semiconductor device, method of manufacutre thereof, and information processing device
05/15/2003US20030089930 Double-gated vertical junction field effect power transistor
05/15/2003US20030089928 Semiconductor device
05/15/2003US20030089922 Semiconductor device and method of manufacturing same
05/15/2003US20030089911 Semiconductor device and method of manufacturing the same
05/15/2003US20030089910 Semiconductor element, electric circuit, display device and light-emitting device
05/15/2003US20030089909 Thin film transistors; field effect mobility increased, by performing the introduction of oxygen into the film after performing heat treatment
05/15/2003US20030089907 Thin-film transistor device, its manufacturing process, and image display using the device
05/15/2003US20030089906 Semiconductor device and method for fabricating the same
05/15/2003US20030089905 Light emitting device
05/15/2003US20030089904 Electrically conducting organic compound and electronic device
05/15/2003US20030089901 Relaxed silicon germanium platform for high speed cmos electronics and high speed analog circuits
05/15/2003US20030089900 Tunneling emitter with nanohole openings
05/15/2003US20030089899 Nanoscale wires and related devices
05/15/2003CA2465162A1 Silicon on insulator device with improved heat removal and method of manufacture
05/14/2003EP1311067A1 Integrated series schottky and FET to allow negative drain voltage
05/14/2003EP1311000A2 Semiconductor memory having storage cells storing multiple bits and a method of manufacturing the same
05/14/2003EP1310997A2 Light emitting device
05/14/2003EP1310994A1 Nonvolatile memory device and method for manufacturing the same
05/14/2003EP1310993A2 Method for enhancing the electric connection between a power electronic device and its package
05/14/2003EP1310004A2 Organic field-effect transistor (ofet), a production method therefor, an integrated circuit constructed from the same and their uses
05/14/2003EP1310000A1 A power mos transistor comprising a plurality of transistor segments with different threshold voltages
05/14/2003EP1309995A2 Method and apparatus for measuring parameters of an electronic device
05/14/2003EP1309991A2 A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device
05/14/2003EP1222738B1 Thyristor arrangement with turnoff protection
05/14/2003EP0979531B1 Silicon carbide field conrolled bipolar switch
05/14/2003EP0836232B1 Tunnelling device and method of producing a tunnelling device
05/14/2003CN1418377A Kusunoki Shigeru
05/14/2003CN1418372A Method for forming high quality multiple thickness oxide layers by using high temperature descum
05/14/2003CN1417871A Light-emitting device
05/14/2003CN1417867A Integrated schottky barrier diode and its manufacture
05/14/2003CN1417866A Active pixel with weakened dark current in CMOS image sensor
05/14/2003CN1417859A Semiconductor device
05/14/2003CN1417852A Semiconductor device and its manufacture
05/14/2003CN1417845A Manufacture of semiconductor integrated circuit device
05/14/2003CN1417841A Semiconductor device and its manufacture
05/14/2003CN1417803A Magnetic memory with SOI base board and its making process
05/14/2003CN1417383A Etchant and substrate with etched copper wire array
05/14/2003CN1108630C Method for manufacturing semiconductor device having metal silicide film
05/14/2003CN1108613C Method for manufacturing non-volatile memory cell
05/14/2003CN1108539C 有源矩阵液晶显示器 An active matrix liquid crystal display
05/13/2003US6563733 Memory array architectures based on a triple-polysilicon source-side injection non-volatile memory cell
05/13/2003US6563728 Semiconductor memory device and method for operation thereof
05/13/2003US6563558 Liquid crystal display with light shielding film
05/13/2003US6563541 Solid state image device with a vertical charge transfer portion
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