Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2003
10/30/2003US20030201474 Reducing leakage current; semiconductor with silicide barrier
10/30/2003US20030201467 Method of forming memory arrays based on a triple-polysilicon source-side injection non-volatile memory cell
10/30/2003US20030201465 Semiconductor manufacturing method for low-k insulating film
10/30/2003US20030201464 Semiconductor device
10/30/2003US20030201461 Heterobipolar transistor and method of fabricating the same
10/30/2003US20030201460 Semiconductor layer
10/30/2003US20030201459 Nitride based transistors on semi-insulating silicon carbide substrates
10/30/2003US20030201458 Strained fin fets structure and method
10/30/2003US20030201457 Gate-coupled MOSFET ESD protection circuit
10/30/2003US20030201456 Insulated gate semiconductor device
10/30/2003US20030201455 Semiconductor device and manufacturing method thereof
10/30/2003US20030201454 Trench IGBT
10/30/2003US20030201450 Semiconductor device
10/30/2003US20030201442 Semiconductor device and method for fabricating the same
10/30/2003US20030201440 Thin film transistor formed on a transparent substrate
10/30/2003US20030201439 Display bright images; thin film transistor; pixel and drive circuit on substrate
10/30/2003US20030201438 Thin film transistor array panel for liquid crystal display
10/30/2003US20030201437 Semiconductor display devices and applications
10/30/2003US20030201436 Thin-film transistor display devices
10/30/2003US20030201435 Semiconductor device including active matrix circuit
10/30/2003US20030201433 Semiconductor light receiving device and electronic apparatus incorporating the same
10/30/2003US20030201396 Imaging array and methods for fabricating same
10/29/2003EP1357604A2 Field-plate mesfet
10/29/2003EP1357603A2 Semiconductor device
10/29/2003EP1356527A1 Bipolar transistor and method for producing the same
10/29/2003EP1356525A1 Charge-coupled device
10/29/2003EP1356523A2 Display device
10/29/2003EP1356521A1 Power transistor with internally combined low-pass and band-pass matching stages
10/29/2003EP1356507A1 Capping layer for improved silicide formation in narrow semiconductor structures
10/29/2003EP1356506A1 Manufacture of trench-gate semiconductor devices
10/29/2003EP1356505A1 Non-volatile memory with source side boron implantation
10/29/2003EP1356504A1 Silicon germanium bipolar transistor
10/29/2003EP1356500A2 Pod load interface equipment adapted for implementation in a fims system
10/29/2003EP1355864A2 Pre-polycoating of glass substrates
10/29/2003EP0995094B1 Method of manufacturing a semiconductor component
10/29/2003CN1452789A Single supply HFET with temp. compensation
10/29/2003CN1452317A Semiconductor switch circuit device
10/29/2003CN1452252A Panel display with black matrix and mfg. method thereof
10/29/2003CN1452251A Semiconductor device and method for mfg. same
10/29/2003CN1452250A Polysilicon thin film transistor and mfg method thereof
10/29/2003CN1452249A Nonvolatile semiconductor memory and method for mfg. same
10/29/2003CN1452246A Potential transformation circuit without transistor junction breakdown effect
10/29/2003CN1452225A Insulation grid film transistor and control system thereof
10/29/2003CN1452224A Film semiconductor epitaxial substrate and process for producing same
10/29/2003CN1452223A Semiconductor device and method for mfg. same
10/29/2003CN1452142A Display device and mfg. method thereof
10/29/2003CN1452002A Method for mfg. liquid crystal display device array substrate
10/29/2003CN1126181C Circuit breaking thyratron having barrier
10/29/2003CN1126180C Latch free power MOS bipolar transistor and forming method thereof
10/29/2003CN1126179C Transistor and semiconductor circuit
10/29/2003CN1126174C Monolithic high frequency integrated circuit structure and method of manufacturing the same
10/29/2003CN1126173C Semiconductor integrated capacitive acceleration sensor and relative fabrication method
10/29/2003CN1126154C Method of manufacturing active array display device
10/29/2003CN1126151C Fabrication method of semiconductor device equipped with silicide layer
10/29/2003CN1126150C Method for manufacturing semiconductor device
10/29/2003CN1126112C Circuit for resetting output potential of power supply generating postive or negative high voltage
10/29/2003CN1125977C Prssure sensor, pressure sensor control device and pressure sensor system
10/29/2003CN1125976C Capacitive pressure transducer
10/28/2003US6639835 Static NVRAM with ultra thin tunnel oxides
10/28/2003US6639828 Static memory cell having independent data holding voltage
10/28/2003US6639575 Liquid crystal display
10/28/2003US6639450 Enhanced conductivity body biased PMOS driver
10/28/2003US6639425 Process and temperature compensation circuit for integrated RF switching
10/28/2003US6639320 Reticle for creating resist-filled vias in a dual damascene process
10/28/2003US6639319 Conductive structure in an integrated circuit
10/28/2003US6639316 Electrode having substrate and surface electrode components for a semiconductor device
10/28/2003US6639303 Integrated circuits and methods for their fabrication
10/28/2003US6639301 Semiconductor device and manufacturing method thereof
10/28/2003US6639300 Semiconductor integrated circuit having an integrated resistance region
10/28/2003US6639296 Semiconductor device and method of manufacturing the same
10/28/2003US6639295 Semiconductor device
10/28/2003US6639293 Solid-state imaging device
10/28/2003US6639291 Spin dependent tunneling barriers doped with magnetic particles
10/28/2003US6639288 Semiconductor device with a particular conductor arrangement
10/28/2003US6639282 Semiconductor device on silicon-on-insulator and method for manufacturing the semiconductor device
10/28/2003US6639281 Method and apparatus for providing a high-performance active matrix pixel using organic thin-film transistors
10/28/2003US6639280 Semiconductor device and semiconductor chip using SOI substrate
10/28/2003US6639279 Semiconductor transistor having interface layer between semiconductor and insulating layers
10/28/2003US6639278 Semiconductor device
10/28/2003US6639277 High-voltage transistor with multi-layer conduction region
10/28/2003US6639276 Power MOSFET with ultra-deep base and reduced on resistance
10/28/2003US6639275 Semiconductor device with vertical MOSFET
10/28/2003US6639274 Semiconductor device
10/28/2003US6639273 Silicon carbide n channel MOS semiconductor device and method for manufacturing the same
10/28/2003US6639272 Charge compensation semiconductor configuration
10/28/2003US6639271 Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same
10/28/2003US6639270 Non-volatile memory cell
10/28/2003US6639269 Electrically programmable memory cell configuration and method for fabricating it
10/28/2003US6639268 Flash memory with ultra thin vertical body transistors
10/28/2003US6639264 With collar of fluorine doped silicon oxide
10/28/2003US6639263 Semiconductor device with copper wiring connected to storage capacitor
10/28/2003US6639260 Semiconductor device having a vertical semiconductor element
10/28/2003US6639259 Charge-coupled device
10/28/2003US6639257 Hetero-junction bipolar transistor having a dummy electrode
10/28/2003US6639256 Structure for eliminating collector-base band gap discontinuity in an HBT
10/28/2003US6639255 GaN-based HFET having a surface-leakage reducing cap layer
10/28/2003US6639254 Epitaxial layer capable of exceeding critical thickness
10/28/2003US6639253 Overvoltage protection device
10/28/2003US6639252 Integrated circuit and method for fabricating an integrated circuit
10/28/2003US6639247 Semi-insulating silicon carbide without vanadium domination
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