Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2003
10/15/2003CN1449510A Fabrication of nanoelectronic circuits
10/15/2003CN1449359A Single molecule array on silicon substrate for quantum computer
10/15/2003CN1449059A Semiconductor devices
10/15/2003CN1449058A Semiconductor devices
10/15/2003CN1449057A Field effect transistor and devices using same
10/15/2003CN1449056A Method for manufacturing semiconductor device
10/15/2003CN1449049A Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the same
10/15/2003CN1449048A Semiconductor memory and voltage application method to semiconductor memory
10/15/2003CN1449046A Memory structures
10/15/2003CN1449044A Semiconductor storage device and its making method
10/15/2003CN1449040A 半导体集成电路器件及其制造方法 The semiconductor integrated circuit device and manufacturing method thereof
10/15/2003CN1449034A Semiconductor device with copper wirings
10/15/2003CN1449025A Method of a read scheme for a non-volatile memory
10/15/2003CN1449024A Erase scheme for non-volatile memory
10/15/2003CN1449002A Method for preparing self-aligning silicide of metal oxide semiconductor
10/15/2003CN1449001A Method for manufacturing semiconductor device
10/15/2003CN1448987A Semiconductor device and manufacture thereof, electro-optic apparatus and electronic machine
10/15/2003CN1448911A Input output protective circuit of liquid crystal display device
10/15/2003CN1448909A Electro-optical device and driving method therefore, electronic device and projection type display device
10/15/2003CN1448902A Display equipment
10/15/2003CN1448762A In-plane switching mode liquid crystal display device
10/15/2003CN1124647C Interconnect structure in semiconductor device and method of formation
10/15/2003CN1124641C Method for making crystal semiconductor
10/14/2003US6634013 Wiring failure analysis method using simulation of electromigration
10/14/2003US6633496 Symmetric architecture for memory cells having widely spread metal bit lines
10/14/2003US6633473 Overcurrent control circuit of power semiconductor device
10/14/2003US6633421 A unit has an array of lasers having an emission surface through which beams can be emitted in a substantially vertical direction so as to define an emission side, drive electronics connected to a side opposite to the emission side of the array
10/14/2003US6633359 Liquid crystal display having signal lines on substrate intermittently extending and its manufacture
10/14/2003US6633075 Heterojunction bipolar transistor and method for fabricating the same
10/14/2003US6633072 Fabrication method for semiconductor integrated circuit devices and semiconductor integrated circuit device
10/14/2003US6633071 Contact on a P-type region
10/14/2003US6633070 Semiconductor device
10/14/2003US6633069 A bipolar transistor has metal silicide as a base lead-out electrode instead of conventional polysilicon, and the metal silicide film extends to an edge of an etching stopper layer, to reduce an emitter resistance and restrain an occurrence of
10/14/2003US6633068 Low-noise silicon controlled rectifier for electrostatic discharge protection
10/14/2003US6633067 Compact SOI body contact link
10/14/2003US6633066 CMOS integrated circuit devices and substrates having unstrained silicon active layers
10/14/2003US6633065 High-voltage transistor with multi-layer conduction region
10/14/2003US6633064 Compensation component with improved robustness
10/14/2003US6633063 Low voltage transient voltage suppressor and method of making
10/14/2003US6633059 Semiconductor device having MOS transistor
10/14/2003US6633057 Non-volatile semiconductor memory and fabricating method therefor
10/14/2003US6632749 Method for manufacturing silicon oxide film, method for manufacturing semiconductor device, semiconductor device, display device and infrared light irradiating device
10/14/2003US6632747 Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile
10/14/2003US6632731 Structure and method of making a sub-micron MOS transistor
10/14/2003US6632729 Laser thermal annealing of high-k gate oxide layers
10/14/2003US6632723 Semiconductor device
10/14/2003US6632717 Transistor of semiconductor device and method of manufacturing the same
10/14/2003US6632716 Better stable operation performance by preventing an element isolating film being etched away
10/14/2003US6632715 Semiconductor device having nonvolatile memory cell and field effect transistor
10/14/2003US6632714 Method for manufacturing semiconductor memory
10/14/2003US6632712 Method of fabricating variable length vertical transistors
10/14/2003US6632711 Process for producing thin film semiconductor device and laser irradiation apparatus
10/14/2003US6632710 Method for forming semiconductor device
10/14/2003US6632709 Electronic device manufacture
10/14/2003US6632708 Semiconductor device and method of manufacturing the same
10/14/2003US6632696 Manufacturing method of active matrix substrate plate and manufacturing method therefor
10/14/2003US6631662 Apparatus for sawing wafers employing multiple indexing techniques for multiple die dimensions
10/14/2003US6631646 Electrically insulated strain gage
10/14/2003US6631645 Semiconductor pressure sensor utilizing capacitance change
10/14/2003US6631643 Accelerometer
10/14/2003US6631642 External force detecting sensor
10/10/2003CA2424211A1 A memory device
10/09/2003WO2003083951A1 Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same
10/09/2003WO2003083950A1 Doped group iii-v nitride materials, and microelectronic devices and device precursor structures comprising same
10/09/2003WO2003083949A1 Nanowire and electronic device
10/09/2003WO2003083948A1 Molecular integrated circuit molecular electronic devices
10/09/2003WO2003083947A2 Folded bit line dram with vertical ultra thin body transistors
10/09/2003WO2003083937A2 Source-side stacking fault body-tie for partially-depleted soi mosfet hysteresis control
10/09/2003WO2003083936A1 Method for forming an improved metal silicide contact to a silicon-containing conductive region
10/09/2003WO2003083934A1 Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same
10/09/2003WO2003083929A1 Ion implantation of silicon oxid liner to prevent dopant out-diffusion from so urce/drain extensions
10/09/2003WO2003083928A2 A method for making nanoscale wires and gaps for switches and transistors
10/09/2003WO2003083927A1 Methods for manufacturing compound semiconductor and compound insulator using chemical reaction and diffusion by heating, compound semiconductor and compound insulator manufactured using the method, and photocell, electronic circuit, transistor, and memory using the same
10/09/2003WO2003083925A1 Method for forming insulation film
10/09/2003WO2003083919A2 Method of manufacturing nanowires and electronic device
10/09/2003WO2003083916A1 Memory wordline hard mask extension
10/09/2003WO2003082482A1 Method for producing boride thin films
10/09/2003WO2003063243B1 Thin films, structures having thin films, and methods of forming thin films
10/09/2003WO2003038904A3 Field effect transistor on insulating layer and manufacturing method
10/09/2003WO2003034499A3 Semiconductor structure having compensated resistance in the ldd region, and method for producing the same
10/09/2003WO2003032393A3 Double densed core gates in sonos flash memory
10/09/2003WO2003031317A3 Micromechanical sensor having a self-test function and optimization method
10/09/2003WO2002097891A3 Dram cell arrangement with vertical mos transistors and method for the production thereof
10/09/2003WO2002029949A3 Semiconductor device with protective functions
10/09/2003US20030190820 Titanium carbonate films for use in semiconductor processing
10/09/2003US20030190817 Electrode structure, and method for manufacturing thin-film structure
10/09/2003US20030190805 Method of manufacturing semiconductor device
10/09/2003US20030190800 Method of fabricating semiconductor device having metal conducting layer
10/09/2003US20030190798 Method for manufacturing a semiconductor device having a layered gate electrode
10/09/2003US20030190797 Laser irradiation apparatus and method of fabricating a semiconductor device
10/09/2003US20030190791 Germanium field effect transistor and method of fabricating the same
10/09/2003US20030190790 Method of fabricating gate dielectric for use in semiconductor device
10/09/2003US20030190789 Superjunction LDMOST using an insulator substrate for power integrated circuits
10/09/2003US20030190788 Semiconductor device and its manufacturing method
10/09/2003US20030190786 Memory manufacturing process with bitline isolation
10/09/2003US20030190780 Oxynitride gate dielectric and method of forming
10/09/2003US20030190778 Method for the fabrication of a DMOS transistor
10/09/2003US20030190777 Semiconductor thin flim forming method and semiconductor device
10/09/2003US20030190767 Method for the production and configuration of organic field-effect transistors (ofet)
10/09/2003US20030190765 Pressure transducer with composite diaphragm
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