Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2003
12/03/2003EP0840930B1 Programmable non-volatile bidirectional switch for programmable logic
12/03/2003CN1460299A Matrix array devices with flexible substrates
12/03/2003CN1460298A Electronic devices comprising thin-film transistors, and their mfg.
12/03/2003CN1460297A Semiconductor device and mfg. method thereof
12/03/2003CN1460296A Semiconductor device, semiconductor layer and production method thereof
12/03/2003CN1460295A 显示装置 Display device
12/03/2003CN1459873A Indium phosphide base indium phosphide/indium gallium arsenic antimony/indium phosphide double hetero bipolar transistor
12/03/2003CN1459870A Semiconductor device and mfg. method thereof
12/03/2003CN1459863A Nonvolatile semiconductor storage capable of uniformly input/output data
12/03/2003CN1459862A Semiconductor storage capable of correctly writing data
12/03/2003CN1459861A Metal oxide semiconductor transistor and its mfg. method
12/03/2003CN1459850A Separated grid electrode type quick flashing storage and its manufacturing method
12/03/2003CN1459837A Method for forming transistor in semiconductor device
12/03/2003CN1459828A Semiconductor device and mfg. method thereof
12/03/2003CN1459824A Surface treating method and film pattern forming method
12/03/2003CN1459658A Liquid crystal display device with concave grid electrode and mfg. method thereof
12/03/2003CN1129967C Semiconductor device and method of production thereof
12/03/2003CN1129966C 钛酸钡晶体管 Barium titanate transistor
12/03/2003CN1129965C 钛酸锶晶体管 Strontium titanate transistor
12/03/2003CN1129961C Method for manufacture of semiconductor device
12/03/2003CN1129955C Method for manufacturing semiconductor
12/03/2003CN1129954C Method for forming high-melting point metal silicide layer of semi conductor device
12/02/2003US6657911 Semiconductor device with low power consumption memory circuit
12/02/2003US6657898 Nonvolatile semiconductor memory device and data erase method therefor
12/02/2003US6657893 Nonvolatile semiconductor memory device and method for driving the same
12/02/2003US6657892 Nonvolatile semiconductor memory
12/02/2003US6657692 Transmission liquid crystal display and method of forming the same
12/02/2003US6657688 Liquid crystal display device with reflector forming part of capacity element
12/02/2003US6657301 Contact structure, method of forming the same, semiconductor device, and method of manufacturing the same
12/02/2003US6657290 Semiconductor device having insulation layer and adhesion layer between chip lamination
12/02/2003US6657289 Apparatus relating to block configurations and fluidic self-assembly processes
12/02/2003US6657286 Microelectronic assembly formation with lead displacement
12/02/2003US6657282 Electrical and electronic apparatus comprising flip chips in pattern layouts having thermosetting resins such as polyimides or epoxy resins as seals or covering for stress relieving or shockproofing; packaging
12/02/2003US6657281 Bipolar transistor with a low K material in emitter base spacer regions
12/02/2003US6657280 Redundant interconnect high current bipolar device
12/02/2003US6657279 PNP lateral bipolar electronic device and corresponding manufacturing process
12/02/2003US6657278 Diverse band gap energy level semiconductor device
12/02/2003US6657276 Shallow trench isolation (STI) region with high-K liner and method of formation
12/02/2003US6657273 Termination for high voltage schottky diode
12/02/2003US6657269 Sensor cell
12/02/2003US6657268 Metal gate stack with etch stop layer having implanted metal species
12/02/2003US6657267 Semiconductor device and fabrication technique using a high-K liner for spacer etch stop
12/02/2003US6657265 Semiconductor device and its manufacturing method
12/02/2003US6657264 Layout method of latch-up prevention circuit of a semiconductor device
12/02/2003US6657263 MOS transistors having dual gates and self-aligned interconnect contact windows
12/02/2003US6657261 Ground-plane device with back oxide topography
12/02/2003US6657260 Thin film transistors having source wiring and terminal portion made of the same material as the gate electrodes
12/02/2003US6657259 Multiple-plane FinFET CMOS
12/02/2003US6657258 Semiconductor device having quasi-SOI structure
12/02/2003US6657257 Electrical and electronic apparatus comprising P and N-type junctions on doped silicon substrates, having electrodes in layouts to improve overvoltage
12/02/2003US6657256 Trench DMOS transistor having a zener diode for protection from electro-static discharge
12/02/2003US6657255 Trench DMOS device with improved drain contact
12/02/2003US6657254 Trench MOSFET device with improved on-resistance
12/02/2003US6657253 Memory of multilevel quantum dot structure and method for fabricating the same
12/02/2003US6657252 FinFET CMOS with NVRAM capability
12/02/2003US6657251 Semiconductor memory device having memory transistors with gate electrodes of a double-layer stacked structure and method of fabricating the same
12/02/2003US6657250 Vertical flash memory cell with buried source rail
12/02/2003US6657249 Nonvolatile semiconductor memory device with peripheral circuit part comprising at least one of two transistors having lower conductive layer same perpendicular structure as a floating gate
12/02/2003US6657248 Semiconductor device having groove isolation structure and gate oxide films with different thickness
12/02/2003US6657245 Resin-encapsulated semiconductor apparatus and process for its fabrication
12/02/2003US6657242 Trench-isolated bipolar devices
12/02/2003US6657241 ESD structure having an improved noise immunity in CMOS and BICMOS semiconductor devices
12/02/2003US6657240 Gate-controlled, negative resistance diode device using band-to-band tunneling
12/02/2003US6657239 Power-switching semiconductor device
12/02/2003US6657228 Semiconductor integrated circuit and fabrication method thereof
12/02/2003US6657227 Transistor with thin film active region having clusters of different crystal orientation
12/02/2003US6657226 Thin-film transistor array and method for manufacturing same
12/02/2003US6657225 Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate
12/02/2003US6657223 Strained silicon MOSFET having silicon source/drain regions and method for its fabrication
12/02/2003US6657175 TFT type optical detecting sensor implementing small-sized drive IC
12/02/2003US6657154 Multicompartment containers comprising vapor deposition, excimer laser annealing, hydrogen generators, insulator formation and vacuum transfer cells for forming transistors or integrated circuits
12/02/2003US6656854 Method of forming a low dielectric constant film with tetramethylcyclotetrasiloxane (TMCTS) and LPCVD technique
12/02/2003US6656853 Enhanced deposition control in fabricating devices in a semiconductor wafer
12/02/2003US6656852 Method for the selective removal of high-k dielectrics
12/02/2003US6656845 Method for forming semiconductor substrate with convex shaped active region
12/02/2003US6656843 Single mask trench fred with enlarged Schottky area
12/02/2003US6656824 Low resistance T-gate MOSFET device using a damascene gate process and an innovative oxide removal etch
12/02/2003US6656823 Semiconductor device with schottky contact and method for forming the same
12/02/2003US6656815 Process for implanting a deep subcollector with self-aligned photo registration marks
12/02/2003US6656812 Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process
12/02/2003US6656811 Carbide emitter mask etch stop
12/02/2003US6656810 Semiconductor device capable of reducing dispersion in electrical characteristics and operating at high speed and method for fabricating the same
12/02/2003US6656809 Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics
12/02/2003US6656808 Transistor having variable width gate electrode and method of manufacturing the same
12/02/2003US6656806 SOI structure and method of producing same
12/02/2003US6656804 Semiconductor device and production method thereof
12/02/2003US6656802 Process of manufacturing a semiconductor device including a buried channel field effect transistor
12/02/2003US6656800 Method of manufacturing semiconductor device including process for implanting impurities into substrate via MOS transistor gate electrode and gate insulation film
12/02/2003US6656799 Method for producing FET with source/drain region occupies a reduced area
12/02/2003US6656798 Gate processing method with reduced gate oxide corner and edge thinning
12/02/2003US6656797 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation
12/02/2003US6656796 Multiple etch method for fabricating split gate field effect transistor (FET) device
12/02/2003US6656795 Method of manufacturing semiconductor memory element
12/02/2003US6656794 Method of manufacturing semiconductor device including a memory area and a logic circuit area
12/02/2003US6656793 Method of forming a self-aligned floating gate in flash memory cell
12/02/2003US6656792 Nanocrystal flash memory device and manufacturing method therefor
12/02/2003US6656780 Method of manufacturing a semiconductor device having nitrogen ions by twice RTA processes
12/02/2003US6656779 Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof
12/02/2003US6656776 Thin film transistor and fabricating method thereof
12/02/2003US6656775 Semiconductor substrate, semiconductor device, and manufacturing method thereof