Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2003
11/13/2003US20030209746 Integrated circuit memory devices having memory cells therein that utilize phase-change materials to support non-volatile data retention and methods of forming same
11/13/2003US20030209745 Tailored insulator properties for devices
11/13/2003US20030209741 Insulated gate semiconductor device
11/13/2003US20030209739 Vertical semiconductor device with tunnel insulator in current path controlled by gate electrode
11/13/2003US20030209737 Thin film transistor, method for manufacturing same, and liquid crystal display device using same
11/13/2003US20030209736 Image sensor and method of manufacturing the same
11/13/2003US20030209735 IT-CCD and manufacturing method thereof
11/13/2003US20030209729 Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers
11/13/2003US20030209726 Array substrate used for a display device and a method of making the same
11/13/2003US20030209724 Semiconductor device for low voltage protection with low capacitance
11/13/2003US20030209723 Gallium nitride-based compound semiconductor device
11/13/2003US20030209715 Semiconductor device with ohmic electrode formed on compound semiconductor having wide band gap and its manufacture method
11/13/2003US20030209712 Solid state image pickup device
11/13/2003US20030209711 Thin film transistor and fabricating method thereof
11/13/2003US20030209710 Semiconductor device and method of manufacturing the semiconductor device
11/13/2003US20030209709 Display device with an improved contact hole arrangement for contacting a semiconductor layer through an insulation film
11/13/2003US20030209703 Ferritin; controlling particle size; combustion ; forming metal aggregate
11/13/2003US20030209079 Pressure sensor and method of manufacturing pressure sensor
11/13/2003US20030209075 Acceleration sensor and manufacturing method for the same
11/13/2003CA2483403A1 High voltage switching devices and process for forming same
11/12/2003EP1361614A1 Semiconductor device manufacturing method
11/12/2003EP1361608A2 Providing electrical connection between an active region and a conductive layer in a semiconductor device using carbon nanotubes
11/12/2003EP1361607A1 Semiconductor device and its production method
11/12/2003EP1361606A1 Method of producing electronic device material
11/12/2003EP1360727A1 Bipolar diode with a trench gate
11/12/2003EP1360725A2 Non-uniform power semiconductor and method for making
11/12/2003EP1360718A2 Integrated circuit arrangement consisting of a flat substrate
11/12/2003EP1360693A1 Programmable fuse and antifuse and method therefor
11/12/2003EP1360646A2 Optimization method for quantum computing process
11/12/2003EP1186054B1 Current controlled field effect transistor
11/12/2003EP0985229B1 Method for mos transistor isolation
11/12/2003CN1455958A Semiconductor device
11/12/2003CN1455632A Organic electroluminescence device and its mfg. method
11/12/2003CN1455631A Active matrix organic electroluminescence device and its mfg. method
11/12/2003CN1455628A Organic-electroluminescence display device and its mfg. method
11/12/2003CN1455461A Back-gate MOS transistor, and manufacturing method thereof and static RAM
11/12/2003CN1455460A Semiconductor device and its making method therefor
11/12/2003CN1455459A Structure of groove-grid MIS device and producing method thereof
11/12/2003CN1455458A Semiconductor switch circuit device and making method therefor
11/12/2003CN1455454A Electrostatic discharge protective circuit structure and manufacturing method thereof
11/12/2003CN1455446A 半导体器件 Semiconductor devices
11/12/2003CN1455289A Photoelectrical device and electronic apparatus
11/12/2003CN1455234A Pressure sensor
11/12/2003CN1127765C CMOS semiconductor device and method of fabricating the same
11/12/2003CN1127760C Method for fabricating nonvolatile memory device
11/12/2003CN1127755C Integrated circuit having mixed layered superlattice materials and precruser solutions for use in process of making same
11/12/2003CN1127754C Semiconductor material
11/11/2003US6646924 Non-volatile memory and operating method thereof
11/11/2003US6646923 Methods of operating semiconductor memory devices having split gate-type non-volatile memory cells
11/11/2003US6646916 Non-volatile semiconductor memory device
11/11/2003US6646693 Flat panel display device incorporating peripheral drive circuits therein
11/11/2003US6646661 Method for making TFT-LCD having black matrix in source and drain region and in absence of insulator
11/11/2003US6646462 Extraction of drain junction overlap with the gate and the channel length for ultra-small CMOS devices with ultra-thin gate oxides
11/11/2003US6646352 Gate electrode comprising body centered cubic tantalum and tantalum nitride
11/11/2003US6646326 Method and system for providing source/drain-gate spatial overlap engineering for low-power devices
11/11/2003US6646325 Semiconductor device having a step-like section on the back side of the substrate, and method for manufacturing the same
11/11/2003US6646324 Method and apparatus for a linearized output driver and terminator
11/11/2003US6646322 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
11/11/2003US6646321 Power transistor with internally combined low-pass and band-pass matching stages
11/11/2003US6646319 Semiconductor device having isolating region for suppressing electrical noise
11/11/2003US6646315 Conductive film layer for hall effect device
11/11/2003US6646313 Semiconductor integrated circuit device and having deposited layer for gate insulation
11/11/2003US6646311 Vertical bipolar transistor formed using CMOS processes
11/11/2003US6646309 Electrostatic discharge trigger
11/11/2003US6646308 Flat panel display device
11/11/2003US6646307 MOSFET having a double gate
11/11/2003US6646306 Semiconductor device
11/11/2003US6646304 Universal semiconductor wafer for high-voltage semiconductor components
11/11/2003US6646303 Nonvolatile semiconductor memory device and a method of manufacturing the same
11/11/2003US6646302 Embedded metal nanocrystals
11/11/2003US6646301 Floating gate semiconductor device
11/11/2003US6646296 Semiconductor integrated circuit and method for manufacturing the same
11/11/2003US6646295 Semiconductor device
11/11/2003US6646293 Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
11/11/2003US6646288 Current control p-channel thin film transistor resistant to hot carrier injection; reliability; efficiency
11/11/2003US6646287 Semiconductor device with tapered gate and insulating film
11/11/2003US6646283 Semiconductor device, image display device, and method and apparatus for manufacture thereof
11/11/2003US6646282 Field emission display device
11/11/2003US6645882 Preparation of composite high-K/standard-K dielectrics for semiconductor devices
11/11/2003US6645875 Method of processing metal and method of manufacturing semiconductor device using the metal
11/11/2003US6645867 Structure and method to preserve STI during etching
11/11/2003US6645861 Process control; overcoating silicone with metal; anisotropic etching; rapid thermal annealing
11/11/2003US6645849 Method for manufacturing semiconductor device for suppressing detachment of conductive layer
11/11/2003US6645840 Forming two layers, etching the top one and oxidizing to form a notch, where the bottom layer oxidizes at a faster rate than the top layer; making a transistor gate
11/11/2003US6645836 Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon
11/11/2003US6645835 Semiconductor film forming method and manufacturing method for semiconductor devices thereof
11/11/2003US6645834 Method for manufacturing annealed wafer and annealed wafer
11/11/2003US6645831 Thermally stable crystalline defect-free germanium bonded to silicon and silicon dioxide
11/11/2003US6645829 Optoelectronic integrated circuit (OEIC); outermost epitaxial layer exposed to the chemical-mechanical processing equipment is always silicon or silicon dioxide
11/11/2003US6645826 Semiconductor device and method of fabricating the same
11/11/2003US6645821 Method of producing a thin film resistor in an integrated circuit
11/11/2003US6645820 Polycrystalline silicon diode string for ESD protection of different power supply connections
11/11/2003US6645815 Forming Metal-oxide-semiconductor field-effect transistor (MOSFET) by patterned implantation mask comprising insulating region and apertures over epitaxial layer, wherein electro-conductive dopant is implanted and diffused through
11/11/2003US6645812 Method for fabricating a non-volatile semiconductor memory cell with a separate tunnel window
11/11/2003US6645800 Method for the production of a field-effect structure
11/11/2003US6645798 Metal gate engineering for surface p-channel devices
11/11/2003US6645797 Method for forming fins in a FinFET device using sacrificial carbon layer
11/11/2003US6645796 Method and semiconductor structure for implementing reach through buried interconnect for silicon-on-insulator (SOI) devices
11/11/2003US6645795 Polysilicon doped transistor using silicon-on-insulator and double silicon-on-insulator
11/11/2003US6645790 System and method for prototyping and fabricating complex microwave circuits
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