Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2003
10/28/2003US6639246 Semiconductor device
10/28/2003US6639245 Active matrix display device having high intensity and high precision and manufacturing method thereof
10/28/2003US6638877 Ultra-thin SiO2using N2O as the oxidant
10/28/2003US6638876 Method of forming dielectric films
10/28/2003US6638874 Methods used in fabricating gates in integrated circuit device structures
10/28/2003US6638873 Semiconductor device producing method
10/28/2003US6638872 Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates
10/28/2003US6638871 Method for forming openings in low dielectric constant material layer
10/28/2003US6638869 Process for manufacturing reflective TFT-LCD with rough diffuser
10/28/2003US6638861 Method of eliminating voids in W plugs
10/28/2003US6638850 Method of fabricating a semiconductor device having a trench-gate structure
10/28/2003US6638827 Semiconductor device and method of manufacturing it
10/28/2003US6638826 Power MOS device with buried gate
10/28/2003US6638825 Method for fabricating a high voltage device
10/28/2003US6638824 Metal gate double diffusion MOSFET with improved switching speed and reduced gate tunnel leakage
10/28/2003US6638823 Ultra small size vertical MOSFET device and method for the manufacture thereof
10/28/2003US6638820 Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
10/28/2003US6638807 Technique for gated lateral bipolar transistors
10/28/2003US6638806 Semiconductor device and method of fabricating the same
10/28/2003US6638804 Method of manufacturing semiconductor device with high and low breakdown transistors
10/28/2003US6638803 Semiconductor device and method for manufacturing the same
10/28/2003US6638801 Semiconductor device and its manufacturing method
10/28/2003US6638799 Method for manufacturing a semiconductor device having a silicon on insulator substrate
10/28/2003US6638798 Method of fabricating a semiconductor device of high-voltage CMOS structure
10/28/2003US6638797 High performance poly-SiGe thin film transistor and a method of fabricating such a thin film transistor
10/28/2003US6638786 Image sensor having large micro-lenses at the peripheral regions
10/28/2003US6638781 Semiconductor device and method of fabricating the same
10/28/2003US6638482 Stacked, reconfigurable system is provided. The stacked, reconfigurable system includes an inlet for receipt of a sample, a first chamber defined by a bottom support, an intermediate member, and a first spacer, the first chamber
10/28/2003CA2177150C Electrostatic discharge protection circuit
10/23/2003WO2003088366A1 Non-volatile, programmable, electrically erasable memory semiconductor device having a single grid material layer and corresponding magnetic core plane
10/23/2003WO2003088365A1 Semiconductor device and its manufacturing method
10/23/2003WO2003088364A2 Trench-gate semiconductor devices
10/23/2003WO2003088363A1 Bipolar transistor with graded base layer
10/23/2003WO2003088362A1 Semiconductor device and manufacturing method thereof
10/23/2003WO2003088360A1 N-fet and p-fet fabrication on the same wafer using different crystal planes for the optimization of carrier transport
10/23/2003WO2003088357A1 Semiconductor device and its manufacturing method
10/23/2003WO2003088353A1 Memory manufacturing process with bitline isolation
10/23/2003WO2003088345A1 Material for electronic device and process for producing the same
10/23/2003WO2003088341A1 Method for forming underlying insulation film
10/23/2003WO2003088331A1 Semiconductor device having semiconductor thin-films of different crystallinities, substrate thereof, process for producing these, liquid crystal display unit and process for producing the same
10/23/2003WO2003088328A2 Method for production of a capacitive structure above a metallisation level of an electronic component
10/23/2003WO2003088322A2 Semiconductor device
10/23/2003WO2003088312A2 Superjunction device with improved avalanche capability and breakdown voltage
10/23/2003WO2003088310A2 Substrate and method for producing a substrate
10/23/2003WO2003088260A1 Algorithm dynamic reference programming
10/23/2003WO2003088259A1 Refresh scheme for dynamic page programming
10/23/2003WO2003088251A2 Thin film diode integrated with chalcogenide memory cell
10/23/2003WO2003088193A1 Substrate, liquid crystal display having the substrate, and method for producing substrate
10/23/2003WO2003087850A1 Frequency characteristics measuring method and device for acceleration sensor
10/23/2003WO2003087747A1 Semiconductor force sensor
10/23/2003WO2003086729A1 Device for the injection moulding of moulded bodies made from plastic
10/23/2003WO2003067640A3 Method for the production of a memory cell and structure thereof
10/23/2003WO2003038905A3 Lateral soi field-effect transistor
10/23/2003US20030200071 Simulation method
10/23/2003US20030199166 Structure and method to preserve STI during etching
10/23/2003US20030199156 Manufacturing method of semiconductor device
10/23/2003US20030199155 Methods providing oxide layers having reduced thicknesses at central portions thereof
10/23/2003US20030199153 Method of producing SI-GE base semiconductor devices
10/23/2003US20030199145 Method for fabricating transistor
10/23/2003US20030199144 Mask, method of manufacturing a mask, method of manufacturing an organic electroluminescence device, and organic electroluminescence device
10/23/2003US20030199143 Method for fabricating non-volatile memory having P-type floating gate
10/23/2003US20030199129 Insulated gate field effect transistor and method for forming the same
10/23/2003US20030199128 SOI device with reduced junction capacitance
10/23/2003US20030199127 Method of forming a thin film transistor on a plastic sheet
10/23/2003US20030199123 Clock distribution networks and conductive lines in semiconductor integrated
10/23/2003US20030199117 Method for fabricating array substrate for x-ray detector
10/23/2003US20030199109 Wafer-level test structure for edge-emitting semiconductor lasers
10/23/2003US20030198878 Resist pattern of a resist film is formed by exposing the resist film using a gate electrode forming mask (a Levenson phase shift mask), and developing the resist film. An antireflection film is etched using the resist pattern as an
10/23/2003US20030198106 Floating trap type nonvolatile memory device and method of fabricating the same
10/23/2003US20030198104 Nonvolatile memory devices and methods of fabricating the same
10/23/2003US20030198103 Non-volatile semiconductor memory device
10/23/2003US20030198102 Non-volatile semiconductor memory device
10/23/2003US20030198095 Memory device and manufacturing method thereof
10/23/2003US20030198091 Semiconductor device
10/23/2003US20030198087 Low voltage single poly deep sub-micron flash EEPROM
10/23/2003US20030198086 Semiconductor integrated circuit device and a method of manufacturing the same
10/23/2003US20030198077 Semiconductor device and method for driving the same
10/23/2003US20030197456 Devices containing a carbon nanotube
10/23/2003US20030197288 Positioning to reduce axial displacement of wire bonding
10/23/2003US20030197281 Integrated circuit package having reduced interconnects
10/23/2003US20030197274 Semiconductor device and method of manufacturing the same
10/23/2003US20030197268 Semiconductor device with stacked memory and logic substrates and method for fabricating the same
10/23/2003US20030197265 Automotive diode; gradient thickness of connector frame; solder dies
10/23/2003US20030197248 Method for making a multi-die chip
10/23/2003US20030197247 Controlling doping concentration at anode, cathode zones
10/23/2003US20030197242 Structure and fabrication method of electrostatic discharge protection circuit
10/23/2003US20030197240 Lateral type power MOS transistor and fabrication method thereof
10/23/2003US20030197239 Clock distribution networks and conductive lines in semiconductor integrated circuits
10/23/2003US20030197235 Conductive film layer for hall effect device
10/23/2003US20030197232 Semiconductor device and method of producing the same
10/23/2003US20030197231 Semiconductor device and method of manufacturing the same
10/23/2003US20030197230 High performance CMOS device structure with mid-gap metal gate
10/23/2003US20030197228 Overcoating aperture with tungsten; annealing; prevent damage
10/23/2003US20030197224 Methods for fabricating field effect transistors having elevated source/drain regions
10/23/2003US20030197223 Semiconductor device
10/23/2003US20030197222 Method for manufacturing semiconductor device, semiconductor device, electro-optical device, and electronic apparatus
10/23/2003US20030197221 Non-volatile semiconductor memory and method of manufacturing the same
10/23/2003US20030197220 High-voltage vertical transistor with a multi-layered extended drain structure
10/23/2003US20030197219 Flash memory device and fabricating method therefor
10/23/2003US20030197217 Electrically-programmable non-volatile memory cell
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