Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2003
11/27/2003US20030218170 Semiconductor element and semiconductor device comprising the same
11/27/2003US20030218169 Laser crystallization; patterned semiconductor
11/27/2003US20030218116 Image sensor with photosensitive thin film transistors
11/27/2003US20030217603 Diaphragm-type semiconductor pressure sensor
11/27/2003US20030217597 Inertia force sensor
11/26/2003EP1365452A2 Non-volatile semiconductor memory device and method of fabricating thereof
11/26/2003EP1365447A2 Manufacturing method of semiconductor substrate
11/26/2003EP1365277A2 Electro-optical device and electronic apparatus
11/26/2003EP1364411A1 Relaxed silicon germanium platform for high speed cmos electronics and high speed analog circuits
11/26/2003EP1364410A2 Semiconductor devices and their peripheral termination
11/26/2003EP1364409A2 Method for the production of metallic bitlines for memory cell arrays, method for the production of memory cell arrays and memory cell arrays
11/26/2003EP1364405A1 High voltage semiconductor device
11/26/2003EP1364400A1 Method for producing thin layers on a specific support and an application thereof
11/26/2003EP1364393A1 Flash memory with ultra thin vertical body transistors
11/26/2003EP0734586B1 Method for fabricating self-assembling microstructures
11/26/2003CN2588537Y Novel structure for miniature diode
11/26/2003CN1459126A Method for forming dielectric film
11/26/2003CN1458812A Display device
11/26/2003CN1458743A Latch circuit
11/26/2003CN1458698A Film semiconductor device
11/26/2003CN1458697A Semiconductor device and its producing method
11/26/2003CN1458696A Electric charge coupling device barrier width partly rducing in communication path
11/26/2003CN1458694A Silicon nitride film semiconductor device and its producing method
11/26/2003CN1458693A Semiconductor storage device and its producing method
11/26/2003CN1458683A Method for producing semiconductor device with increased effective groove length
11/26/2003CN1458676A Semiconductor device and its producing method
11/26/2003CN1458675A Method for preparing semiconductor device with super shallow and super steep backword surface groove
11/26/2003CN1129190C FEMFET device and method for producing same
11/26/2003CN1129189C Non-volatile semiconductor memory device and process for producing same
11/26/2003CN1129185C Semiconductor device, semiconductor equipment, and method for mfg. same
11/26/2003CN1129174C Method for manufacturing bipolar transistor capable of suppressing deterioration of transistor characteristics
11/26/2003CN1129025C Improved active matrix ESD protection and testing scheme
11/26/2003CN1128893C Corrosion apparatus
11/25/2003US6654604 Equipment for communication system
11/25/2003US6654284 Channel write/erase flash memory cell and its manufacturing method
11/25/2003US6654282 Nonvolatile semiconductor memory device
11/25/2003US6654075 Liquid crystal display device and method for fabricating the same
11/25/2003US6653996 Display device
11/25/2003US6653885 On-chip integrated mixer with balun circuit and method of making the same
11/25/2003US6653740 Vertical conduction flip-chip device with bump contacts on single surface
11/25/2003US6653720 Semiconductor electronic parts
11/25/2003US6653717 Enhancement in throughput and planarity during CMP using a dielectric stack containing an HDP oxide
11/25/2003US6653716 Varactor and method of forming a varactor with an increased linear tuning range
11/25/2003US6653715 Bipolar transistor
11/25/2003US6653714 Lateral bipolar transistor
11/25/2003US6653711 Reducing fuse programming time for non-volatile storage of data
11/25/2003US6653707 Low leakage Schottky diode
11/25/2003US6653704 Magnetic memory with tunnel junction memory cells and phase transition material for controlling current to the cells
11/25/2003US6653702 Semiconductor pressure sensor having strain gauge and circuit portion on semiconductor substrate
11/25/2003US6653700 Forming intrinsic silicon film on insulating substrate, forming gate dielectric layer, gate electrode comprising thin mid-gap work function film, doped polysilicon film, forming pair of source/drain regions on opposite sides of silicon body
11/25/2003US6653699 Polysilicon/Amorphous silicon gate structures for integrated circuit field effect transistors
11/25/2003US6653696 Semiconductor device, memory system, and electronic instrument
11/25/2003US6653695 Semiconductor device with an improved gate electrode pattern
11/25/2003US6653693 Semiconductor integrated circuit device
11/25/2003US6653691 Devices having plurality of field effect transistor unit cells which utilize Faraday shield layers to reduce parasitic gate-to-drain capacitance and concomitantly improve high frequency switching performance
11/25/2003US6653690 Semiconductor device comprising high density integrated circuit having a large number of insulated gate field effect transistors
11/25/2003US6653689 Semiconductor device having electrostatic protection circuit
11/25/2003US6653687 Insulated gate semiconductor device
11/25/2003US6653686 Structure and method of controlling short-channel effect of very short channel MOSFET
11/25/2003US6653685 Nonvolatile memory device
11/25/2003US6653682 Non-volatile electrically alterable semiconductor memory device
11/25/2003US6653679 Reduced 1/f noise in MOSFETs
11/25/2003US6653674 Vertical source/drain contact semiconductor
11/25/2003US6653670 Silicon-on-insulator diodes and ESD protection circuits
11/25/2003US6653669 Device for the adjustment of circuits after packaging
11/25/2003US6653668 Radio frequency modules and modules for moving target detection
11/25/2003US6653667 GaAs-based semiconductor field-effect transistor
11/25/2003US6653666 Vertical J-FET semiconductor configuration having region on surface including first contact with highly doped contact layer serving as source between two second contacts serving as gate; low-loss, fast, short circuit-proof switching element
11/25/2003US6653665 Substrate having semiconductor layer insulated by insulating film, thyristor with gate laterally formed in layer, transistor formed in layer and connected to one terminal of thyristor; small cell area
11/25/2003US6653659 Silicon carbide inversion channel mosfets
11/25/2003US6653658 Electrical and electronic structures having improved thermoconductivity, comprising doped layers on germanium, sapphire, silicon and/or carbide substrates; heat exchangers
11/25/2003US6653657 Semiconductor device and a method of manufacturing the same
11/25/2003US6653656 Semiconductor device formed on insulating layer and method of manufacturing the same
11/25/2003US6653655 Integrated semiconductor device including high-voltage interconnections passing through low-voltage regions
11/25/2003US6653653 Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes
11/25/2003US6653221 Method of forming a ground in SOI structures
11/25/2003US6653211 Semiconductor substrate, SOI substrate and manufacturing method therefor
11/25/2003US6653206 Method and apparatus for processing composite member
11/25/2003US6653200 Trench fill process for reducing stress in shallow trench isolation
11/25/2003US6653189 Source side boron implant and drain side MDD implant for deep sub 0.18 micron flash memory
11/25/2003US6653188 Method of forming poly tip of floating gate in split-gate memory
11/25/2003US6653185 Method of providing trench walls by using two-step etching processes
11/25/2003US6653183 Single-poly EPROM and method for forming the same
11/25/2003US6653181 At least three layers of material are formed on the substrate, structure is selectively doped to form an n-type region and a p-type region in the structure
11/25/2003US6653180 Transistors including gate dielectric layers having different nitrogen concentrations and related structures
11/25/2003US6653179 Method for manufacturing a thin film semiconductor device, method for manufacturing a display device, method for manufacturing a thin film transistors, and method for forming a semiconductor thin film
11/25/2003US6653178 Thin film transistor and method for manufacturing the same
11/25/2003US6653177 Patterning method, thin film transistor matrix substrate manufacturing method, and exposure mask
11/25/2003US6653176 Method for manufacturing x-ray detector
11/25/2003US6653175 Stability in thyristor-based memory device
11/25/2003US6653174 Thyristor-based device over substrate surface
11/25/2003US6653161 Method and apparatus for forming a capacitive structure including single crystal silicon
11/25/2003US6653159 Glass transparent substrate; patterned overcoatings; pixel electrode; passivation layer
11/25/2003US6653157 Manufacturing method for device including function block, and light transmitting device
11/25/2003US6653030 Optical-mechanical feature fabrication during manufacture of semiconductors and other micro-devices and nano-devices that include micron and sub-micron features
11/25/2003US6653028 Radiation transparent substrate; sheild pattern
11/25/2003US6652989 Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface
11/25/2003US6652808 Electric field assisted self-assembly of functionalized programmable nucleic acids, modified structures and other selective affinity or binding moieties
11/25/2003US6651508 Pressure sensor having semiconductor sensor chip
11/20/2003WO2003096434A1 Metal dielectric semiconductor floating gate variable capacitor
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