Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2003
11/11/2003US6645784 Microelectromechanically tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter
11/11/2003US6645576 Includes a liquid crystal layer containing a liquid crystal molecule having negative dielectric anisotropy and a dopant having a dissociative group; after image remaining after removing direct current voltage is suppressed
11/11/2003US6645454 System and method for regulating lateral growth in laser irradiated silicon films
11/11/2003US6644126 Sensor device for detecting mechanical deformation
11/11/2003US6644125 Pressure sensor
11/10/2003CA2385911A1 Method and apparatus for two dimensional assembly of particles
11/06/2003WO2003092079A1 Enhanced cutoff frequency silicon germanium transistor
11/06/2003WO2003092078A1 Semiconductor element and manufacturing method thereof
11/06/2003WO2003092077A2 Electronic displays
11/06/2003WO2003092047A2 THz DETECTION EMPLOYING MODULATION DOPED QUANTUM WELL DEVICE STRUCTURES
11/06/2003WO2003092041A2 Method for fabricating a soi substrate a high resistivity support substrate
11/06/2003WO2003091795A1 Active matrix display device
11/06/2003WO2003071585A3 High voltage power mosfet having low on-resistance
11/06/2003WO2003052812A3 Non volatile memory cell with a trench transistor
11/06/2003WO2003041185A3 Organic thin film transistor with polymeric interface
11/06/2003WO2003038860A3 Gate-controllable quick punch through igbt and reduced emi
11/06/2003WO2003031687A3 Corrosion-proof pressure transducer
11/06/2003WO2003021690A3 Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate
11/06/2003WO2003015180A3 Mis device having a trench gate electrode and method of making the same
11/06/2003WO2003015138A3 Optimized buried-channel fets based on sige heterostructures
11/06/2003WO2003009339A3 Graded base gaassb for high speed gaas hbt
11/06/2003WO2002089182A3 Recessed gat dram transistor and method
11/06/2003WO2002063656A3 Chemical monolayer and micro-electronic junctions and devices containing same
11/06/2003WO2002048701A8 Nanosensors
11/06/2003WO2002041378A3 Semiconductor structure and process for fabricating same
11/06/2003US20030208725 Method of designing semiconductor integrated circuit device and semiconductor integrated circuit device
11/06/2003US20030207590 Lower temperature method for forming high quality silicon-nitrogen dielectrics
11/06/2003US20030207571 Gate technology for strained surface channel and strained buried channel MOSFET devices
11/06/2003US20030207569 Process for forming a low resistivity titanium silicide layer on a silicon semiconductor substrate and the resulting device
11/06/2003US20030207567 Metal film pattern and manufacturing method thereof
11/06/2003US20030207556 Forming a conductive structure in a semiconductor device
11/06/2003US20030207555 Semiconductor device and method of fabricating the same
11/06/2003US20030207554 Method for making semiconductor device
11/06/2003US20030207551 Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby
11/06/2003US20030207549 Method of forming a silicate dielectric layer
11/06/2003US20030207548 Semiconductor device and method of manufacturing the same
11/06/2003US20030207545 SOI substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the SOI substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
11/06/2003US20030207543 Structure and method of MOS transistor having increased substrate resistance
11/06/2003US20030207541 Method for protecting MOS components from antenna effect and the apparatus thereof
11/06/2003US20030207540 Atomic layer-deposited laaio3 films for gate dielectrics
11/06/2003US20030207538 Trench DMOS transistor with embedded trench schottky rectifier
11/06/2003US20030207536 Semiconductor device with alternating conductivity type layer and method of manufacturing the same
11/06/2003US20030207533 Forming electronic structures having dual dielectric thicknesses and the structure so formed
11/06/2003US20030207532 Method and structure for salicide trench capacitor plate electrode
11/06/2003US20030207523 Chip design with power rails under transistors
11/06/2003US20030207520 Nonvolatile memory device with reduced floating gate and increased coupling ratio and manufacturing method thereof
11/06/2003US20030207517 Flash memory cell and method for fabricating a flash
11/06/2003US20030207516 Stacked die in die BGA package
11/06/2003US20030207515 Stacked die in die BGA package
11/06/2003US20030207512 Self-aligned SiGe HBT on a SOI substrate
11/06/2003US20030207508 Double recessed transistor
11/06/2003US20030207507 Method of manufacturing a semiconductor device and a process of a thin film transistor
11/06/2003US20030207505 Method of making transistors
11/06/2003US20030207504 Transistors with controllable threshold voltages, and various methods of making and operating same
11/06/2003US20030207502 Semiconductor device and manufacturing method therefor
11/06/2003US20030207496 Semiconductor device and method for manufacturing the same
11/06/2003US20030207480 Method of manufacturing semiconductor device
11/06/2003US20030207477 Devices and methods for integrated circuit manufacturing
11/06/2003US20030207473 Method of forming ferroelectric thin films on a high-k layer
11/06/2003US20030207470 Metal insulator semiconductor structure with polarization-compatible buffer layer
11/06/2003US20030207097 Multilayer structure used especially as a material of high relative permittivity
11/06/2003US20030206472 Semiconductor memory device including an SOI substrate
11/06/2003US20030206445 Flash memory with nanocrystalline silicon film floating gate
11/06/2003US20030206443 Nonvolatile semiconductor memory and method of manufacturing the same
11/06/2003US20030206440 Bi-directional floating gate nonvolatile memory
11/06/2003US20030206439 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
11/06/2003US20030206437 Floating-gate semiconductor structures
11/06/2003US20030205973 Active matrix organic electroluminescent device and fabricating method thereof
11/06/2003US20030205969 Organic electroluminescent display device and method of fabricating the same
11/06/2003US20030205968 Organic electoluminescent device and fabricating method thereof
11/06/2003US20030205829 Rad Hard MOSFET with graded body diode junction and reduced on resistance
11/06/2003US20030205808 Semiconductor device
11/06/2003US20030205787 Semiconductor device having a fuse
11/06/2003US20030205784 Capable of preventing bubble defects.
11/06/2003US20030205781 Method of manufacturing a device with epitaxial base
11/06/2003US20030205777 Integrated fuse with regions of different doping within the fuse neck
11/06/2003US20030205776 Non-volatile semiconductor memory device and its manufacturing method
11/06/2003US20030205775 Low- voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
11/06/2003US20030205774 Semiconductor device with an L-shaped/reversed L-shaped gate side-wall insulating film
11/06/2003US20030205772 Semiconductor structure and process for forming a metal oxy-nitride dielectric layer
11/06/2003US20030205771 Semiconductor memory device and manufacturing method
11/06/2003US20030205769 Method of making a polycide interconnection layer having a silicide film formed on a polycrystal silicon for a semiconductor device
11/06/2003US20030205767 Dual metal gate CMOS devices
11/06/2003US20030205765 Semiconductor device and method for manufacturing the same
11/06/2003US20030205762 Low voltage transient voltage suppressor and method of making
11/06/2003US20030205761 Bi-directional silicon controlled rectifier for electrostatic discharge protection
11/06/2003US20030205760 Method of manufacturing SOI element having body contact
11/06/2003US20030205759 Reduction of parasitic bipolar leakage current in silicon on insulator devices
11/06/2003US20030205758 Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique
11/06/2003US20030205757 Field-effect-controllable semiconductor configuration with a laterally extending channel zone
11/06/2003US20030205755 Substrate, a floating gate, a control gate, a tunnel layer, a first doping region, and a second doping region; increasing the integration of ICs by decreasing the lateral dimension of the memory cell.
11/06/2003US20030205754 Dynamic electrically alterable programmable read only memory device
11/06/2003US20030205753 Non-volatile semiconductor memory device
11/06/2003US20030205751 Semiconductor memory device
11/06/2003US20030205748 DRAM cell structure capable of high integration and fabrication method thereof
11/06/2003US20030205747 Self-aligned source pocket for flash memory cells
11/06/2003US20030205742 Single transistor ferroelectric transistor structure with high-k insulator
11/06/2003US20030205740 Memory cell transistor having different source/drain junction profiles connected to DC node and BC node and manufacturing method thereof
11/06/2003US20030205739 Single crystal silicon sensor with high aspect ratio and curvilinear structures and associated method
11/06/2003US20030205735 Semiconductor device and a process for producing same
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