Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2003
11/06/2003US20030205733 Method of fabricating a semiconductor component
11/06/2003US20030205731 Semiconductor integrated circuit device and manufacturing method thereof
11/06/2003US20030205728 Non-volatile memory device having a metal-oxide-nitride-oxide-semiconductor gate structure and fabrication method thereof
11/06/2003US20030205727 Flash memory device and a method for fabricating the same
11/06/2003US20030205722 Semiconductor device
11/06/2003US20030205721 Insulating oxide film formed in a peripheral portion of said active region on said substrate by oxidizing the nitride
11/06/2003US20030205720 High-resistivity metal in a phase-change memory cell
11/06/2003US20030205719 Semiconductor device and power amplifier using the same
11/06/2003US20030205715 Heterojunction p-i-n diode and method of making the same
11/06/2003US20030205662 Image sensor with photosensitive thin film transistors and dark current compensation
11/06/2003US20030205483 Method for fabricating trench capacitors for large scale integrated semiconductor memories
11/06/2003US20030205194 Process for manufacturing a semiconductor device
11/06/2003US20030205090 Pressure sensor
11/06/2003US20030205089 Absolute pressure sensor
11/05/2003EP1359624A2 Vertical type MOSFET and manufacturing method thereof
11/05/2003EP1359623A2 Method of fabricating a high-voltage transistor
11/05/2003EP1359620A2 ESD Protection Of Noise Decoupling Capacitors
11/05/2003EP1359402A1 Pressure sensor
11/05/2003EP1358684A1 Organic field effect transistor with a photostructured gate dielectric, method for the production and use thereof in organic electronics
11/05/2003EP1358682A2 Electron-jump chemical energy converter
11/05/2003EP1358681A2 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
11/05/2003EP1358680A1 Isoelectronic co-doping
11/05/2003EP1358678A1 Programmable memory address and decode circuits with ultra thin vertical body transistors
11/05/2003EP1358669A2 Dynamic memory based on single electron storage
11/05/2003EP1358445A1 Micromachined silicon gyro using tuned accelerometer
11/05/2003EP1153980B1 Epoxy resin composition
11/05/2003EP0950173B1 Method for making a thin film resonant microbeam absolute pressure sensor
11/05/2003CN1453882A Semiconductor device and producing method thereof
11/05/2003CN1453881A Insulated-gate semiconductor apparatus
11/05/2003CN1453880A MOSFET and its manufacture
11/05/2003CN1453878A Method for forming semiconductor memory array and memory array produced thereby
11/05/2003CN1453877A Monocrystalline/polycrystalline flash memory unit structure and array with low operation voltage
11/05/2003CN1453872A Flash memory and its producing method
11/05/2003CN1453864A Power semiconductor device produced with package in chip size
11/05/2003CN1453850A Semiconductor with Si-Ge grid and producing method thereof
11/05/2003CN1453848A Semiconductor element and producing method thereof
11/05/2003CN1453756A Display
11/05/2003CN1453619A Electrooptical apparatus and electronic equipment
11/05/2003CN1453616A Display
11/05/2003CN1453615A Array base plate for liquid crystal display device and producing method thereof
11/05/2003CN1127148C Insulated gate type semiconductor device and manufacturing method thereof
11/05/2003CN1127126C Method of manufacturing thin film transistor
11/05/2003CN1127125C Method for manufacturing semiconductor device capable of effectively carrying out hydrogen passivation
11/04/2003US6643434 Passive alignment using slanted wall pedestal
11/04/2003US6643193 Semiconductor device, microcomputer and flash memory
11/04/2003US6643188 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
11/04/2003US6643170 Method for operating a multi-level memory cell
11/04/2003US6642621 Capacitor-type semiconductor device
11/04/2003US6642607 Semiconductor device
11/04/2003US6642606 Method for producing siliconized polysilicon contacts in integrated semiconductor structures
11/04/2003US6642605 Semiconductor device and a process for producing same
11/04/2003US6642604 An interlayer dielectric film covering the resistor layer has first and second embedded plugs providing the interconnection to reduce in temperature rise in resistor elements
11/04/2003US6642600 Insulated gate semiconductor device having first trench and second trench connected to the same
11/04/2003US6642599 Semiconductor device and method of manufacturing the same
11/04/2003US6642594 Single chip multiple range pressure transducer device
11/04/2003US6642592 Semiconductor device and method for fabricating same
11/04/2003US6642591 Field-effect transistor
11/04/2003US6642590 Metal gate with PVD amorphous silicon layer and barrier layer for CMOS devices and method of making with a replacement gate process
11/04/2003US6642589 Suppressing short channel effect
11/04/2003US6642586 Can store data of two bits in one memory cell
11/04/2003US6642585 Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same
11/04/2003US6642584 Dual work function semiconductor structure with borderless contact and method of fabricating the same
11/04/2003US6642581 Semiconductor device comprising buried channel region
11/04/2003US6642579 Method of reducing the extrinsic body resistance in a silicon-on-insulator body contacted MOSFET
11/04/2003US6642577 Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same
11/04/2003US6642575 MOS transistor with vertical columnar structure
11/04/2003US6642574 Semiconductor memory device and manufacturing method thereof
11/04/2003US6642573 Use of high-K dielectric material in modified ONO structure for semiconductor devices
11/04/2003US6642572 Nonvolatile semiconductor memory device and method for fabricating the same
11/04/2003US6642571 Nonvolatile semiconductor memory
11/04/2003US6642570 Structure of flash memory with high coupling ratio
11/04/2003US6642569 Semiconductor memory with nonvolatile memory cell array and semiconductor device with nonvolatile memory cell array and logic device
11/04/2003US6642568 Semiconductor device and method of manufacturing the same
11/04/2003US6642567 Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices
11/04/2003US6642563 Eliminates deterioration problems due to hydrogen reduction and titanium oxide adhesives
11/04/2003US6642560 MOSFET with a thin gate insulating film
11/04/2003US6642558 Method and apparatus of terminating a high voltage solid state device
11/04/2003US6642557 Isolated junction structure for a MOSFET
11/04/2003US6642553 Bipolar transistor and method for producing same
11/04/2003US6642552 Inductive storage capacitor
11/04/2003US6642551 Stable high voltage semiconductor device structure
11/04/2003US6642541 Image sensor having dual-gate transistors
11/04/2003US6642539 Epitaxial template and barrier for the integration of functional thin film metal oxide heterostructures on silicon
11/04/2003US6642538 Voltage controlled nonlinear spin filter based on paramagnetic ion doped nanocrystal
11/04/2003US6642536 Hybrid silicon on insulator/bulk strained silicon technology
11/04/2003US6642297 Insulating binder and doped and undoped semiconductive particles
11/04/2003US6642156 Method for forming heavy nitrogen-doped ultra thin oxynitride gate dielectrics
11/04/2003US6642137 Method for manufacturing a package structure of integrated circuits
11/04/2003US6642133 Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering
11/04/2003US6642132 Cmos of semiconductor device and method for manufacturing the same
11/04/2003US6642131 Method of forming a silicon-containing metal-oxide gate dielectric by depositing a high dielectric constant film on a silicon substrate and diffusing silicon from the substrate into the high dielectric constant film
11/04/2003US6642130 Method for fabricating highly integrated transistor
11/04/2003US6642123 Method of fabricating a silicon wafer including steps of different temperature ramp-up rates and cool-down rates
11/04/2003US6642122 Dual laser anneal for graded halo profile
11/04/2003US6642121 Control of amount and uniformity of oxidation at the interface of an emitter region of a monocrystalline silicon wafer and a polysilicon layer formed by chemical vapor deposition
11/04/2003US6642120 Semiconductor circuit
11/04/2003US6642119 Silicide MOSFET architecture and method of manufacture
11/04/2003US6642117 Method for forming composite dielectric layer
11/04/2003US6642116 Method for fabricating a split gate flash memory cell
11/04/2003US6642115 Double-gate FET with planarized surfaces and self-aligned silicides