Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2003
10/09/2003US20030190632 By electronic control of the transport and attachment of specific binding entities to specific microlocations; concentrate analytes and reactants, remove non-specifically bound molecules, and improve detection of analytes
10/09/2003US20030190556 Method of manufacturing TFT array
10/09/2003US20030189843 Refresh scheme for dynamic page programming
10/09/2003US20030189809 Capacity type pressure sensor and method of manufacturing the pressure sensor
10/09/2003US20030189678 Array substrate for liquid crystal display device and manufacturing method thereof
10/09/2003US20030189659 Reset driver circuit disposed on the same substrate as the image sensor
10/09/2003US20030189255 Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
10/09/2003US20030189251 Semiconductor device
10/09/2003US20030189240 Semiconductor device
10/09/2003US20030189239 Comprises silicon nitride/dioxide layers; high speed, bipolar transistors
10/09/2003US20030189238 Comprises isolation region wherein pillar is capped with dielectric to form void; dielectrics; integrated circuits
10/09/2003US20030189234 Hall effect device
10/09/2003US20030189233 Semiconductor device including low-resistance wires electrically connected to impurity layers
10/09/2003US20030189229 Semiconductor-on-insulator constructions; and methods of forming semiconductor-on-insulator constructions
10/09/2003US20030189228 Method and structure of a disposable reversed spacer process for high performance recessed channel CMOS
10/09/2003US20030189227 High speed SOI transistors
10/09/2003US20030189226 Structure of metal oxide semiconductor field effect transistor
10/09/2003US20030189220 Precision zener diodes and methods of manufacturing precision zener diodes
10/09/2003US20030189210 Semiconductor display device
10/09/2003US20030189206 Light emitting device and electronic equipment
10/09/2003US20030189205 Method of manufacturing thin film transistor
10/09/2003DE10204873C1 Herstellungsverfahren für Speicherzelle Manufacturing method of the memory cell
10/09/2003CA2479657A1 Doped group iii-v nitride materials, and microelectronic devices and device precursor structures comprising same
10/08/2003EP1351484A1 Aa display type image sensor
10/08/2003EP1351392A1 Semiconductor integrated circuit device operating with low power consumption
10/08/2003EP1351315A2 Electronic microcomponent integrating a capacitor structure and corresponding fabrication method
10/08/2003EP1351314A2 Electronic microcomponent comprising a capacitor structure and its method of fabrication
10/08/2003EP1351313A2 Structures of and methods of fabricating trench-gated MIS devices
10/08/2003EP1351312A2 A reset driver circuit disposed on the same substrate as the image sensor
10/08/2003EP1351310A2 Imaging array and methods for fabricating same
10/08/2003EP1351307A1 Method of driving a semiconductor device
10/08/2003EP1351292A2 Semiconductor device comprising a flexible region and method for manufacturing the same
10/08/2003EP1351287A2 Semiconductor device and method for manufacturing the same
10/08/2003EP1351286A2 Semiconductor component and method of manufacture
10/08/2003EP1351284A2 SiGe heterojunction bipolar transistor and method for fabricating the same
10/08/2003EP1351282A2 Method for preventing contamination during the fabrication of a semiconductor device
10/08/2003EP1351254A2 An integrated fuse with regions of different doping within the fuse neck
10/08/2003EP1351253A1 Memory structures
10/08/2003EP1351252A1 Erase scheme for non-volatile memory
10/08/2003EP1351251A1 Method of a read scheme for a non-volatile memory
10/08/2003EP1351044A1 Microsystem with a flexible membrane for pressure sensing
10/08/2003EP1350290A2 Silicon wafer with embedded optoelectronic material for monolithic oeic
10/08/2003EP1350277A2 System and method for electrically induced breakdown of nanostructures
10/08/2003EP1350273A1 Schottky diode
10/08/2003EP1350272A1 Thin film transistors
10/08/2003EP1350265A1 Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
10/08/2003EP1350264A1 Method for forming a pattern and a semiconductor device
10/08/2003EP1350078A1 Micromechanical flow sensor with a tensile coating
10/08/2003EP1115921B1 Method for producing an amorphous or polycrystalline layer on an insulating region
10/08/2003CN1447987A Power MOSFET and method of forming and operating same
10/08/2003CN1447986A Thick oxide layer on botton of trench structure in silicon
10/08/2003CN1447982A Power MOSFET and method for forming same using self-aligned body implant
10/08/2003CN1447916A Nanostructure-based high energy capacity material
10/08/2003CN1447450A Thermoelectric modular
10/08/2003CN1447445A Semiconductor device with reduced parasitic capacitance between impurity diffusion zone
10/08/2003CN1447444A Method for minimizing short channel effect of semiconductor devices and transistors
10/08/2003CN1447443A Charge-coupled device and its mfg. method
10/08/2003CN1447442A Bipolar transistor and semiconductor device applying same
10/08/2003CN1447440A Architecture of silicon/oxide/nitride/oxide/silicon parts possessing high dielectric substance
10/08/2003CN1447436A Semiconductor device and semiconductor memory adopting same
10/08/2003CN1447421A Semiconductor device and its mfg. method, electrooptical device and electronic machine
10/08/2003CN1447420A Method for manufacturing semiconductor device
10/08/2003CN1447403A Deep infra micro MOS devices and its manufacturing method
10/08/2003CN1447390A Semiconductor device and its mfg. method
10/08/2003CN1447389A Method for fabricating polysilicon thin films
10/08/2003CN1447388A Method of mfg. Ôàó-V family compound semiconductor
10/08/2003CN1447156A Wiring substrate for display device and its mfg. method
10/08/2003CN1447153A Electrooptical appts., its mfg. method and electronic machine
10/08/2003CN1447093A Micro inertia sensor and its mfg. method
10/08/2003CN1123934C Semiconductor mfg. tech., and tech. for mfg. semiconductor device
10/08/2003CN1123933C Semiconductor device
10/08/2003CN1123929C Ferroelectric memory and method of producing same
10/08/2003CN1123889C Non-volatile semiconductor memory device and overwriting remedial method thereof
10/07/2003USRE38266 Method for fabricating semiconductor thin film
10/07/2003US6631088 Twin MONOS array metal bit organization and single cell operation
10/07/2003US6631087 Low voltage single poly deep sub-micron flash eeprom
10/07/2003US6630977 Semiconductor device with capacitor formed around contact hole
10/07/2003US6630840 Array substrate inspection method with varying non-selection signal
10/07/2003US6630739 Planarization structure and method for dielectric layers
10/07/2003US6630715 Asymmetrical MOSFET layout for high currents and high speed operation
10/07/2003US6630712 Transistor with dynamic source/drain extensions
10/07/2003US6630711 Semiconductor structures with trench contacts
10/07/2003US6630710 Semiconductor device (e.g., MOSFET) having a channel above the surface of the wafer containing a well and a junction. The elevated channel may be selectively epitaxially grown and enables higher mobility, enabling a higher current flow at
10/07/2003US6630709 Multi-level flash EEPROM cell and method of manufacture thereof
10/07/2003US6630708 Non-volatile memory and method for fabricating the same
10/07/2003US6630707 Semiconductor device including logic circuit and memory circuit
10/07/2003US6630702 Method of using titanium doped aluminum oxide for passivation of ferroelectric materials and devices including the same
10/07/2003US6630699 Transistor device having an isolation structure located under a source region, drain region and channel region and a method of manufacture thereof
10/07/2003US6630698 High-voltage semiconductor component
10/07/2003US6630697 GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal
10/07/2003US6630688 Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same
10/07/2003US6630687 Active matrix display device having wiring layers which are connected over multiple contact parts
10/07/2003US6630409 Method of forming a polycide electrode in a semiconductor device
10/07/2003US6630394 System for reducing silicon-consumption through selective deposition
10/07/2003US6630393 Semiconductor device manufacturing method and semiconductor device manufacturing by the same method
10/07/2003US6630392 Method for fabricating flash memory device
10/07/2003US6630391 Boron incorporated diffusion barrier material
10/07/2003US6630389 Method for manufacturing semiconductor device
10/07/2003US6630388 Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same
10/07/2003US6630386 CMOS manufacturing process with self-amorphized source/drain junctions and extensions
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