Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2003
09/25/2003US20030178675 Semiconductor device and method of manufacturing same
09/25/2003US20030178674 Semiconductor device and its manufacturing method
09/25/2003US20030178673 Structures of and methods of fabricating trench-gated MIS devices
09/25/2003US20030178672 High-breakdown-voltage semiconductor device
09/25/2003US20030178671 Semiconductor memory device and manufacturing method thereof
09/25/2003US20030178670 Finfet CMOS with NVRAM capability
09/25/2003US20030178669 Storage of electrical charges; multilayer, semiconductor substrate, channel zones, embedded barrier, dielectric
09/25/2003US20030178668 Self aligned method of forming a semiconductor memory array of floating gate memory cells with buried bit-line and raised source line, and a memory array made thereby
09/25/2003US20030178662 Trench cell for a DRAM cell array
09/25/2003US20030178661 Memory cell structure with trench capacitor and method for fabrication thereof
09/25/2003US20030178656 Manufacturing method of electro line for liquid crystal display device
09/25/2003US20030178655 Dual sided power amplifier
09/25/2003US20030178654 Complementary Schottky junction transistors and methods of forming the same
09/25/2003US20030178652 Non-volatile memory device and fabrication method thereof
09/25/2003US20030178651 Charge-coupled device and method of fabricating the same
09/25/2003US20030178650 Display device
09/25/2003US20030178646 High-voltage transistor with buried conduction layer
09/25/2003US20030178639 Inductive storage capacitor
09/25/2003US20030178638 Semiconductor mounting system
09/25/2003US20030178633 Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
09/25/2003US20030178628 Display apparatus
09/25/2003US20030178625 Electronic write display projection system
09/25/2003US20030178624 Semiconductor device with minimal short-channel effects and low bit-line resistance
09/25/2003US20030178622 Biased, triple-well fully depleted SOI structure, and various methods of making and operating same
09/25/2003US20030178620 Organic rectifier, circuit, rfid tag and use of an organic rectifier
09/25/2003US20030178618 Semiconductor device, method of manufacturing the same, and apparatus for manufacturing semiconductor
09/25/2003US20030178571 Semiconductor ultraviolet detector
09/25/2003US20030178551 Image sensor apparatus having additional display device function
09/25/2003US20030177839 Force sensors
09/25/2003US20030177831 Semiconductor dynamic sensor having circuit chip mounted on package case with adhesive film interposed
09/25/2003DE10206133C1 Vertikaler Bipolartransistor mit innewohnendem Junction-Feldeffekttransistor (J-FET) A vertical bipolar transistor's innate with junction field effect transistor (J-FET)
09/25/2003CA2708358A1 Lateral junction field effect transistor and method of manufacturing the same
09/25/2003CA2465340A1 Lateral junction field effect transistor and method of manufacturing the same
09/24/2003EP1347507A1 Dielectric film and method of forming it, semiconductor device, nonvolatile semiconductor memory device, and production method for semiconductor device
09/24/2003EP1347506A1 Semiconductor device and its manufacturing method
09/24/2003EP1347503A2 Semiconductor device and method for manufacturing the same
09/24/2003EP1347502A2 Lead-based perovskite buffer layer for forming epitaxial indium phosphide on silicon
09/24/2003EP1346422A1 Organic field-effect transistor, method for structuring an ofet and integrated circuit
09/24/2003EP1346417A2 Trench schottky barrier rectifier and method of making the same
09/24/2003EP1346413A2 Circuit
09/24/2003EP1346410A1 Flexible electronic device
09/24/2003EP1346406A1 Method for the manufacture of a semiconductor device with a field-effect transistor
09/24/2003EP1346405A1 Method for making an island of material confined between electrodes, and application to transistors
09/24/2003EP1346403A2 Method for producing a microelectronic component and component produced according to said method
09/24/2003EP1346369A1 Semiconductor device comprising eeprom and a flash-eprom
09/24/2003EP1346192A1 Micromechanical inertial sensor
09/24/2003EP1345842A2 Method for producing a semiconductor component having a movable mass in particular, and semiconductor component produced according to this method
09/24/2003CN1444774A Method for producing multi-bit memory cell
09/24/2003CN1444289A Diode with high load-carrying ability, its preparation method and application
09/24/2003CN1444288A Film transistor and its mfg. method
09/24/2003CN1444287A Solid camera element and its mfg. method
09/24/2003CN1444286A Charge transfer device
09/24/2003CN1444285A Semiconductor element and semiconductor device using said element
09/24/2003CN1444284A Semiconductor storage with electric potential control circuit
09/24/2003CN1444282A Multi-crystal storage structure, method for forming said structure and semiconductor storage device using said structure
09/24/2003CN1444281A Film semiconductor device and method for mfg. said device
09/24/2003CN1444254A Nitride semiconductor, semiconductor device and mfg. method thereof
09/24/2003CN1444253A Method for producing relaxed SiGe Substrate
09/24/2003CN1444231A Programming for reducing nonvolatile memory and operation technique for fetching interference
09/24/2003CN1444200A Organic electroluminescent display whose power line and grid lind are parallel and its making method
09/24/2003CN1122318C Silicon-base dual potential barrier structure tunnel luminous diode and its manufacture method
09/24/2003CN1122316C Vertical type metal insulator semiconductor field effect transistor and method of its production
09/24/2003CN1122315C MOSFET structure and fabrication method thereof
09/24/2003CN1122314C Thin film semiconductor device
09/24/2003CN1122313C Fast memory and manufacturing method therefor
09/24/2003CN1122311C Semiconductor device having metal silicide film and manufacturing method thereof
09/24/2003CN1122308C Method for forming buried plate in silicon substrate
09/24/2003CN1122307C Complementary metal oxide semiconductor device and formation method thereof
09/24/2003CN1122303C Method for fabricating semiconductor device
09/24/2003CN1122294C Method for preparing plane field emission display screen and its plane display screen
09/23/2003US6624869 In-plane switching type liquid crystal display device with central common feed line and a method for manufacturing the same
09/23/2003US6624663 Low threshold voltage silicon-on-insulator clock gates
09/23/2003US6624513 Semiconductor device with multilayer conductive structure formed on a semiconductor substrate
09/23/2003US6624512 Semiconductor integrated circuit device and printed wired board for mounting the same
09/23/2003US6624497 Semiconductor device with a reduced mask count buried layer
09/23/2003US6624496 Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer
09/23/2003US6624495 Adjustable threshold isolation transistor
09/23/2003US6624494 Method for fabricating a power semiconductor device having a floating island voltage sustaining layer
09/23/2003US6624493 Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems
09/23/2003US6624490 Unipolar spin diode and the applications of the same
09/23/2003US6624488 Epitaxial silicon growth and usage of epitaxial gate insulator for low power, high performance devices
09/23/2003US6624487 Drain-extended MOS ESD protection structure
09/23/2003US6624486 Method for low topography semiconductor device formation
09/23/2003US6624483 Semiconductor device having an insulated gate and a fabrication process thereof
09/23/2003US6624482 Method for creating a useful bipolar junction transistor from a parasitic bipolar junction transistor on a MOSFET
09/23/2003US6624477 Semiconductor device and method for manufacturing the same
09/23/2003US6624475 SOI low capacitance body contact
09/23/2003US6624474 Semiconductor device with scalable withstanding voltage
09/23/2003US6624473 Thin-film transistor, panel, and methods for producing them
09/23/2003US6624472 Semiconductor device with voltage sustaining zone
09/23/2003US6624471 Lateral DMOS transistor with first and second drain electrodes in respective contact with high-and low-concentration portions of a drain region
09/23/2003US6624470 Semiconductor device and a method for manufacturing same
09/23/2003US6624469 Vertical MOS transistor having body region formed by inclined ion implantation
09/23/2003US6624468 Semiconductor device including insulated gate field effect transistors
09/23/2003US6624466 Implant method for forming Si3N4 spacer
09/23/2003US6624465 Multi-layer spacer technology for flash EEPROM
09/23/2003US6624464 Highly integrated non-volatile memory cell array having a high program speed
09/23/2003US6624463 Switching field effect transistor using abrupt metal-insulator transition
09/23/2003US6624459 Silicon on insulator field effect transistors having shared body contact
09/23/2003US6624455 Semiconductor device and method of manufacturing the same including drain pinned along channel width
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