Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2003
12/02/2003US6656774 Method to enhance operating characteristics of FET, IGBT, and MCT structures
12/02/2003US6656771 Semiconductor device, method of connecting a semiconductor chip, circuit board, and electronic equipment
12/02/2003US6656747 Ferroelectric memory and method for manufacturing same
12/02/2003US6656693 Self assembled nano-devices using DNA
11/2003
11/27/2003WO2003098701A1 Semiconductor varactor and oscillating circuit constructed using the same
11/27/2003WO2003098700A2 Resurf super-junction devices having trenches
11/27/2003WO2003098699A1 Semiconductor device and display comprising same
11/27/2003WO2003098698A1 Semiconductor device and its manufacturing method
11/27/2003WO2003098697A1 Method for forming quantum dot, quantum semiconductor device, and its manufacturing method
11/27/2003WO2003098696A1 Circuit fabrication method
11/27/2003WO2003098694A1 Layer arrangement and memory arrangement
11/27/2003WO2003098693A2 Schottky barrier cmos device and method
11/27/2003WO2003098692A1 Integrated circuit with reverse engineering protection
11/27/2003WO2003098690A2 Soi-ldmos devices
11/27/2003WO2003098685A1 Method of making transistors with gate insulation layers of differing thickness
11/27/2003WO2003098679A1 Method of fabricating a bipolar transistor having a realigned emitter
11/27/2003WO2003098671A1 Active matrix display devices and the manufacture thereof
11/27/2003WO2003098663A2 Trench mosfet with field relief feature
11/27/2003WO2003098641A1 Wiring material and wiring board using the same
11/27/2003WO2003098204A1 Method for producing a hybrid organic silicon field effect transistor structure
11/27/2003WO2003097897A1 Vapor deposition method of low dielectric insulating film, thin film transistor using the same and preparation method thereof
11/27/2003WO2003085722A3 Field effect transistor having a lateral depletion structure
11/27/2003WO2003079400A3 Electronic device, method, monomer and polymer
11/27/2003WO2003073471A3 POWER SiC DEVICES HAVING RAISED GUARD RINGS
11/27/2003WO2003050813A3 A device and method to read a 2-transistor flash memory cell
11/27/2003WO2003047163A3 Semiconductor device having a byte-erasable eeprom memory
11/27/2003WO2003044833A3 Method for limiting divot formation in post shallow trench isolation processes
11/27/2003WO2003034379A3 Active matrix display device
11/27/2003WO2003024865A3 Method for producing micro-electromechanical components
11/27/2003WO2003017349A3 Dmos transistor
11/27/2003WO2003015142A3 Formation of planar strained layers
11/27/2003WO2003012860A3 Boron-doped titanium nitride layer for high aspect ratio semiconductor devices
11/27/2003WO2003009396A3 Algaas or ingap low turn-on voltage gaas-based heterojunction bipolar transistor
11/27/2003WO2003009368A3 Low emitter resistance contacts to gaas high speed hbt
11/27/2003WO2003003464A3 Hv-soi ldmos device with integrated diode to improve reliability and avalanche ruggedness
11/27/2003WO2002073527A3 Solid-state quantum dot devices and quantum computing using nanostructured logic dates
11/27/2003US20030219995 Method for fabricating semiconductor integrated circuit device
11/27/2003US20030219972 Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process
11/27/2003US20030219971 Method and structure for ultra-low contact resistance CMOS formed by vertically self-alligned CoSi2 on raised source drain Si/SiGe device
11/27/2003US20030219965 Method and structure for ultra-low contact resistance cmos formed by vertically self-aligned cosi2 on raised source drain si/sige device
11/27/2003US20030219964 Vertical power component manufacturing method
11/27/2003US20030219959 Methods for fabricating final substrates
11/27/2003US20030219954 Manufacturing method of semiconductor substrate
11/27/2003US20030219952 Semiconductor device and method of manufacturing same
11/27/2003US20030219950 Deuterium treatment of semiconductor device
11/27/2003US20030219949 Method of manufacturing and structure of semiconductor device with floating ring structure
11/27/2003US20030219948 Method of manufacturing a semiconductor device
11/27/2003US20030219945 Vertical double diffused MOSFET and method of fabricating the same
11/27/2003US20030219944 Method for manufacturing a nonvolatile memory device
11/27/2003US20030219938 CMOS gate electrode using selective growth and a fabrication method thereof
11/27/2003US20030219935 Method of fabricating semiconductor device
11/27/2003US20030219934 Method of manufacturing device, device, electro-optical device, and electronic apparatus
11/27/2003US20030219933 Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench
11/27/2003US20030219932 Method of manufacturing a semiconductor device
11/27/2003US20030219928 Substrate identification circuit and semiconductor device
11/27/2003US20030219920 Fabrication method of liquid crystal display device
11/27/2003US20030219911 Ultrasonicator, adapted to sonicate a stream of a liquid dispersion of agglomerated primary particles such as toners
11/27/2003US20030219540 Pre-polycoating of glass substrates
11/27/2003US20030218920 Highly compact Eprom and flash EEprom devices
11/27/2003US20030218913 Stepped pre-erase voltages for mirrorbit erase
11/27/2003US20030218912 Flash memory cell erase scheme using both source and channel regions
11/27/2003US20030218910 Semiconductor memory device capable of accurately writing data
11/27/2003US20030218897 Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data
11/27/2003US20030218841 Electrostatic discharge protection device
11/27/2003US20030218699 Liquid crystal display device having sunken gate electrode and fabricating method thereof
11/27/2003US20030218593 Electrooptic device, driving method therefor, electronic device, and projection display device
11/27/2003US20030218257 Semiconductor element, semiconductor device, and method for manufacturing semiconductor element
11/27/2003US20030218251 Image sensor module and method of fabricating the same
11/27/2003US20030218230 Semiconductor device and manufacturing method therefor
11/27/2003US20030218223 Multilayer semiconductor; intake, drain zones; barrier dielectric films; miniaturized transistors
11/27/2003US20030218222 Transistor structures and methods for making the same
11/27/2003US20030218221 Transistor structures and methods for making the same
11/27/2003US20030218220 Power semiconductor device and method of manufacturing the same
11/27/2003US20030218219 MOS transistor and method for fabricating the same
11/27/2003US20030218215 Process for fabricating semiconductor device
11/27/2003US20030218214 MIS semiconductor device and manufacturing method thereof
11/27/2003US20030218213 Semiconductor device allowing improvement in reliability of insulating film formed on main surface of substrate
11/27/2003US20030218211 SOI-LDMOS device with integral voltage sense electrodes
11/27/2003US20030218210 Semiconductor device
11/27/2003US20030218209 Microwave field effect transistor structure
11/27/2003US20030218208 Split gate flash memory cell and method for fabricating the same
11/27/2003US20030218207 Non-volatile semiconductor memory device and method of fabricating thereof
11/27/2003US20030218206 Flash memory device having poly spacers
11/27/2003US20030218205 Nonvolatile memory device
11/27/2003US20030218204 Self-aligned process for fabricating memory cells with two isolated floating gates
11/27/2003US20030218203 Split gate flash with strong source side injection and method of fabrication thereof
11/27/2003US20030218199 Open bit line DRAM with ultra-thin body transistors
11/27/2003US20030218198 Silicon on insulator field effect transistor having shared body contact
11/27/2003US20030218197 Magnetic random access memory
11/27/2003US20030218193 Insulated gate thin film transistor and control system therefor
11/27/2003US20030218188 Lateral DMOS transistor having reduced surface field
11/27/2003US20030218187 Multilayer lamination; substrate, current collector and electroconductive layer
11/27/2003US20030218185 Semiconductor device, manufacturing thereof and power amplifier module
11/27/2003US20030218184 Semiconductor substrate; current collectors; emitter contactor; reduced breaking of metal wires
11/27/2003US20030218183 High power-low noise microwave GaN heterojunction field effet transistor
11/27/2003US20030218182 Strees-controlled dielectric integrated circuit
11/27/2003US20030218178 Thin film transistor array panel for liquid crystal display
11/27/2003US20030218177 Semiconductor display device and method of manufacturing the same
11/27/2003US20030218175 Photo detect element and an optical semiconductor device
11/27/2003US20030218171 Laser crytsllization; transistor; strip pattern
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