Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2003
10/23/2003US20030197216 pn Varactor
10/23/2003US20030197213 Semiconductor integrated circuit device with connections formed using a conductor embedded in a contact hole
10/23/2003US20030197211 Magnetic shielding for MRAM devices
10/23/2003US20030197207 Method of fabricating CMOS thin film transistor
10/23/2003US20030197206 Semiconductor device and method for fabricating the same
10/23/2003US20030197203 Array of flash memory cells and data program and erase methods of the same
10/23/2003US20030197200 TAB tape for semiconductor package
10/23/2003US20030197194 Fin memory cell and method of fabrication
10/23/2003US20030197193 Method of fabricating a bipolar transistor
10/23/2003US20030197190 Semiconductor device with reduced parasitic capacitance between impurity diffusion regions
10/23/2003US20030197185 Thin-film semiconductor epitaxial substrate and process for production thereof
10/23/2003US20030197179 Overlapping barrier wires; transistors
10/23/2003US20030197178 Semiconductor device and display element using semiconductor device
10/23/2003US20030197177 Thin film transistor array panel for a liquid crystal display
10/23/2003US20030197173 Solid image pickup device and method for producing the same
10/23/2003US20030197172 Optical semiconductor device and method of fabricating the same
10/23/2003US20030197166 Semiconductor Device and Semiconductor Substrate, and Method of Fabricating the Same
10/22/2003EP1355363A2 Semiconductor device and method for fabricating the same
10/22/2003EP1355362A1 Semiconductor device
10/22/2003EP1355361A1 Method of forming an electric charge in a body of a semiconductor component
10/22/2003EP1355355A2 Protection circuit section for semiconductor circuit system
10/22/2003EP1355063A1 Ignition device of internal combustion engine
10/22/2003EP1354362A2 Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same
10/22/2003EP1354361A2 Solid state imager arrangements
10/22/2003EP1354342A2 Method for producing a semiconductor component comprising a t-shaped contact electrode
10/22/2003EP1354338A2 Quantum dot devices
10/22/2003EP1354181A1 Sensor for determining the state of parameters on mechanical components while using amorphous carbon layers having piezoresistive properties
10/22/2003EP1184984B1 Power module
10/22/2003EP1050076B1 Method for producing diodes
10/22/2003EP0769207B1 Method of fabricating self-aligned contact trench dmos transistors
10/22/2003CN1451180A Planar hybrid diode rectifier bridge
10/22/2003CN1451173A Methods of fabricating gallium nitride semicnductor layers on substrates including non-gallium nitride posts and gallium nitride
10/22/2003CN1451102A Method of increasing the conductivity of a transparent conductive layer
10/22/2003CN1450839A Method for mfg of electroluminescence display apparatus
10/22/2003CN1450746A Detection power range adjustable photoelectric detector and array thereof
10/22/2003CN1450665A Semiconductor display device
10/22/2003CN1450662A 薄膜晶体管 Thin film transistor
10/22/2003CN1450661A Grid dielectric material zirconium aluminate film used for MOS field effect transistor and making method thereof
10/22/2003CN1450660A Grid dielectric material zirconium aluminate film used for MOS field effect transistor and making method thereof
10/22/2003CN1450658A Semiconductor device and mfg method thereof
10/22/2003CN1450657A Vertical high-power field-effect transistor unit structure
10/22/2003CN1450656A Grid medium stacking structure
10/22/2003CN1450655A SOI metal-oxide-semifield-effect electric crystal
10/22/2003CN1450654A Compound crytal silicon inter grid dielectric layer structure with high dielectric constant and formation method thereof
10/22/2003CN1450653A Field effect transistor adapted for extra-dup submicrometer field and preparation process thereof
10/22/2003CN1450652A Semiconductor device and mfg method and power amplifier moudle
10/22/2003CN1450650A Semiconductor device and mfg method thereof
10/22/2003CN1450649A Semiconductor device and mfg method, SOI substrate and mfg method, and display device thereof
10/22/2003CN1450648A Method for forming semiconductor memory array and the made memory arroy by same
10/22/2003CN1450647A Semiconductor device
10/22/2003CN1450643A Memory device utilizing carbon nanotubes and method of fabricating the memory device
10/22/2003CN1450631A Electro-optical deivce, semiconductor device and its mfg method and projection circuit and electric appliances
10/22/2003CN1450602A Method for forming MOS transistor with self-alignment
10/22/2003CN1450594A Semiconductor device and mfg method thereof
10/22/2003CN1450593A Semiconductor device and mfg method thereof
10/22/2003CN1450385A Array sabstrate for LCD device and mfg method thereof
10/22/2003CN1125482C Manufacture of MOS transistor with P+ polysillcon crid
10/22/2003CN1125466C Nonvolatile semiconductor memory
10/21/2003US6636441 Semiconductor memory device including non-volatile memory cell array having MOS structure in well region formed on semiconductor substrate
10/21/2003US6636439 Fast program to program verify method
10/21/2003US6636438 Control gate decoder for twin MONOS memory with two bit erase capability
10/21/2003US6636433 Electronic device and recording method using the same
10/21/2003US6636294 Microdevice and structural components of the same
10/21/2003US6636280 Forming an amorphous silicon semiconductor film, then annealing and converting into a polycrystalline silicon layer, then cleaning a surface of semiconductor layer, then forming a second amorphous silicon film and annealing
10/21/2003US6636279 Display device and method of manufacturing the same
10/21/2003US6636185 Head-mounted display system
10/21/2003US6636078 Semiconductor device having a reduced leakage current
10/21/2003US6635969 Semiconductor device having chip-on-chip structure, and semiconductor chip used therefor
10/21/2003US6635952 Semiconductor device
10/21/2003US6635950 Semiconductor device having buried boron and carbon regions, and method of manufacture thereof
10/21/2003US6635946 Semiconductor device with trench isolation structure
10/21/2003US6635945 Semiconductor device having element isolation structure
10/21/2003US6635944 Power semiconductor component having a PN junction with a low area edge termination
10/21/2003US6635939 Boron incorporated diffusion barrier material
10/21/2003US6635938 Semiconductor device and manufacturing method thereof
10/21/2003US6635934 Semiconductor integrated circuit device operating with low power consumption
10/21/2003US6635932 Thin film crystal growth by laser annealing
10/21/2003US6635929 Uniform thin film semiconductor device
10/21/2003US6635927 Semiconductor device and method for fabricating the same
10/21/2003US6635926 Field effect transistor with high withstand voltage and low resistance
10/21/2003US6635925 Semiconductor device and method of manufacturing the same
10/21/2003US6635923 Damascene double-gate MOSFET with vertical channel regions
10/21/2003US6635922 Method to fabricate poly tip in split gate flash
10/21/2003US6635921 Semiconductor memory device having a multiple tunnel junction layer pattern and method of fabricating the same
10/21/2003US6635920 Non-volatile semiconductor memory device and manufacturing method thereof
10/21/2003US6635919 High Q-large tuning range micro-electro mechanical system (MEMS) varactor for broadband applications
10/21/2003US6635915 Semiconductor device having trench capacitor formed in SOI substrate
10/21/2003US6635909 Strained fin FETs structure and method
10/21/2003US6635907 Type II interband heterostructure backward diodes
10/21/2003US6635906 Voltage sustaining layer with opposite-doped islands for semi-conductor power devices
10/21/2003US6635900 Semiconductor film having a single-crystal like region with no grain boundary
10/21/2003US6635898 Quantum computer
10/21/2003US6635588 Method for laser thermal processing using thermally induced reflectivity switch
10/21/2003US6635581 Method for forming a thin-film transistor
10/21/2003US6635559 Formation of insulating aluminum oxide in semiconductor substrates
10/21/2003US6635555 Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films
10/21/2003US6635545 Transistor is produced such that connection region of its base is provided with silicide layer, so that base resistance of bipolar transistor is small
10/21/2003US6635544 Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
10/21/2003US6635542 Compact body for silicon-on-insulator transistors requiring no additional layout area
10/21/2003US6635541 Method for annealing using partial absorber layer exposed to radiant energy and article made with partial absorber layer
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