Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2003
11/04/2003US6642114 Semiconductor device and method for fabricating the same
11/04/2003US6642110 Flash memory cell and method of manufacturing the same
11/04/2003US6642109 Method of manufacturing a flash memory cell
11/04/2003US6642108 Fabrication processes for semiconductor non-volatile memory device
11/04/2003US6642107 Non-volatile memory device having self-aligned gate structure and method of manufacturing same
11/04/2003US6642106 Method for increasing core gain in flash memory device using strained silicon
11/04/2003US6642105 Semiconductor device having multi-gate insulating layers and methods of fabricating the same
11/04/2003US6642103 Semiconductor device and method of manufacturing the same
11/04/2003US6642096 Bipolar transistor manufacturing
11/04/2003US6642095 First and second oxynitride layers are formed at a first interface between a SiO2 layer and a gate of p-doped polysilicon and a second interface between the SiO2 layer and a silicon substrate, respectively; improves threshold voltage
11/04/2003US6642094 Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide
11/04/2003US6642092 Thin-film transistors formed on a metal foil substrate
11/04/2003US6642091 Thin-film semiconductor device and apparatus for fabricating thin-film semiconductor device
11/04/2003US6642090 Fin FET devices from bulk semiconductor and method for forming
11/04/2003US6642087 Solid state imaging device having a photodiode and a MOSFET and method of manufacturing the same
11/04/2003US6642086 Method for fabricating thin film transistor array substrate for liquid crystal display
11/04/2003US6642085 Thin film transistors on plastic substrates with reflective coatings for radiation protection
11/04/2003US6642074 Method for manufacturing thin film transistor array panel for LCD having a quadruple layer by a second photolithography process
11/04/2003US6642071 Providing a substrate having pixels each of which has a switching device region and a pixel region; etching the first insulating layer and the second insulating layer of pixel region to form openings; forming a conductive layer over pixel
11/04/2003US6641938 An offcut angle of from about 6 to about 10 degrees; superior morphological and material properties.
11/04/2003US6640643 Capacitive pressure sensor with multiple capacitive portions
11/04/2003US6640642 Capacitance-type pressure sensor
11/04/2003US6640433 Forming organic thin film by building up of monomolecular film, baking to produce amorphous carbon or graphite, microcutting, applying electroconductive film
11/04/2003CA2292769C A titanium nitride diffusion barrier for use in non-silicon technologies and metallization method
10/2003
10/30/2003WO2003090272A2 Methods for the formation of thin film layers using short-time thermal processes
10/30/2003WO2003090268A1 Method of treating substrate and process for producing semiconductor device
10/30/2003WO2003089698A1 Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation
10/30/2003WO2003063202A3 Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate
10/30/2003WO2003061011A3 Non-volatile two-transistor semiconductor memory cell
10/30/2003WO2003046947A3 Bipolar transistor
10/30/2003WO2003044839A3 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
10/30/2003WO2003003472A3 Transistor-arrangement, method for operating a transistor-arrangement as a data storage element and method for producing a transistor-arrangement
10/30/2003WO2002095829A3 Non-volatile memory cells utilizing substrate trenches
10/30/2003WO2002065517A3 Deposition method over mixed substrates using trisilane
10/30/2003WO2002043115A8 Surface preparation prior to deposition
10/30/2003US20030203656 Semiconductor device, manufacturing method thereof, and electronic device
10/30/2003US20030203646 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
10/30/2003US20030203627 Method for fabricating thin film transistor
10/30/2003US20030203609 Metal gate electrode using silicidation and method of formation thereof
10/30/2003US20030203608 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers
10/30/2003US20030203607 Method of manufacturing a portion of a memory
10/30/2003US20030203606 Method for manufacturing a semiconductor device
10/30/2003US20030203604 Methods of fabricating layered structure and semiconductor device
10/30/2003US20030203600 Strained Si based layer made by UHV-CVD, and devices therein
10/30/2003US20030203599 Semiconductor wafer and method for fabricating the same
10/30/2003US20030203593 PD-SOI substrate with suppressed floating body effect and method for its fabrication
10/30/2003US20030203582 Method of forming semiconductor device with bipolar transistor having lateral structure
10/30/2003US20030203576 Method of manufacturing a transistor
10/30/2003US20030203575 Single-poly eprom and method for forming the same
10/30/2003US20030203574 Method of manufacturing nonvolatile memory cell
10/30/2003US20030203573 Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round
10/30/2003US20030203572 Nonvolatile semiconductor memory device and its manufacturing method
10/30/2003US20030203571 Non-volatile memory cells with selectively formed floating gate
10/30/2003US20030203560 CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereof
10/30/2003US20030203557 Method and structure for an improved floating gate memory cell
10/30/2003US20030203556 Semiconductor device and method for facticating the same
10/30/2003US20030203554 Semiconductor device and method for fabricating the same
10/30/2003US20030203552 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon
10/30/2003US20030203546 SOI transistor element having an improved backside contact and method of forming the same
10/30/2003US20030203545 Method of manufacturing a semiconductor device
10/30/2003US20030203536 Flip chip underfill process
10/30/2003US20030203534 Method for making interactive information devices with spacer elements
10/30/2003US20030203533 Single mask trench fred with enlarged schottky area
10/30/2003US20030203528 Method for manufacturing a dynamic quantity detection device
10/30/2003US20030203527 Electro-luminescent display and a method of manufacturing the same
10/30/2003US20030203526 Two layer mirror for LCD-on -silicon products and method of fabrication thereof
10/30/2003US20030203523 Method of driving a light emitting device
10/30/2003US20030203513 Chemical vapor deposition process for fabricating layered superlattice materials
10/30/2003US20030203284 Using holographic technique; particularly relates to method of forming micropores by off-axis exposure process by which a pattern having high resolution can be formed using diagonally applied light
10/30/2003US20030202397 Semiconductor memory device and manufacturing method therefor
10/30/2003US20030202377 Flash EEprom system
10/30/2003US20030202311 ESD protection of noise decoupling capacitors
10/30/2003US20030202267 Electro-optical device, method for manufacturing the same, and electronic apparatus
10/30/2003US20030202251 Apparatus and method for laser radiation
10/30/2003US20030202149 Display device
10/30/2003US20030201964 Driving circuit for electro-optical device, electro-optical device, and electronic apparatus
10/30/2003US20030201728 Display device
10/30/2003US20030201540 Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same
10/30/2003US20030201517 Epitaxial base bipolar transistor with raised extrinsic base
10/30/2003US20030201512 Semiconductor device having one of patterned SOI and SON structure
10/30/2003US20030201510 High voltage device and method for fabricating the same
10/30/2003US20030201508 SOI substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the SOI substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
10/30/2003US20030201506 Method of manufacturing semiconductor device capable of sensing dynamic quantity
10/30/2003US20030201505 Layer of silicon and germanium intermetallic; then polycrystalline silicon
10/30/2003US20030201504 Method and apparatus for making nitrided gate oxide
10/30/2003US20030201503 High voltage mos-gated power device and related manufacturing process
10/30/2003US20030201500 Dual gate logic device
10/30/2003US20030201497 Semiconductor device and method for fabricating the same
10/30/2003US20030201494 Semiconductor device and method of manufacturing the same
10/30/2003US20030201493 Semiconductor device and method of manufacturing the same
10/30/2003US20030201492 Double gate field effect transistor with diamond film
10/30/2003US20030201491 Semiconductor device containing oxide/nitride/oxide dielectric layer and method of forming the same
10/30/2003US20030201489 Flash memory cell and method for fabricating the same
10/30/2003US20030201488 Semiconductor device and manufacturing method thereof
10/30/2003US20030201487 Low voltage single-poly flash memory cell and array
10/30/2003US20030201484 Semiconductor capacitive element, method for manufacturing same and semiconductor device provided with same
10/30/2003US20030201483 Vertical type MOSFET and manufacturing method thereof
10/30/2003US20030201482 Wide bandgap semiconductor device and method for manufacturing the same
10/30/2003US20030201481 DRAM with vertical transistors and deep trench capacitors
10/30/2003US20030201477 Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
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