Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2003
10/07/2003US6630385 MOSFET with differential halo implant and annealing strategy
10/07/2003US6630384 Method of fabricating double densed core gates in sonos flash memory
10/07/2003US6630383 Bi-layer floating gate for improved work function between floating gate and a high-K dielectric layer
10/07/2003US6630382 Current controlled field effect transistor
10/07/2003US6630381 Preventing dielectric thickening over a floating gate area of a transistor
10/07/2003US6630377 Method for making high-gain vertical bipolar junction transistor structures compatible with CMOS process
10/07/2003US6630376 Body-tied-to-body SOI CMOS inverter circuit
10/07/2003US6630375 Process for manufacturing a semiconductor wafer, a semiconductor wafer, process for manufacturing a semiconductor integrated circuit device, and semiconductor integrated circuit device
10/07/2003US6629640 Holographic laser scanning method and system employing visible scanning-zone indicators identifying a three-dimensional omni-directional laser scanning volume for package transport navigation
10/07/2003CA2212002C Uncooled ybacuo thin film infrared detector
10/02/2003WO2003081833A2 Floating-gate analog circuit
10/02/2003WO2003081694A2 Molybdenum-based electrode with carbon nanotube growth
10/02/2003WO2003081681A1 Semiconductor element and method for fabricating the same
10/02/2003WO2003081680A1 Tunneling magnetoresistance device, semiconductor junction device, magnetic memory, and semiconductor light-emitting device
10/02/2003WO2003081679A1 Semi-conductor structure comprising a switch element and an edge element
10/02/2003WO2003081678A1 Doping methods for fully-depleted soi structures, and device comprising the resulting doped regions
10/02/2003WO2003081677A1 Based, triple-well fully depleted soi structure, and various methods of making and operating same
10/02/2003WO2003081676A1 Thin film transistor, circuit device and liquid crystal display
10/02/2003WO2003081675A1 Method for producing an soi field effect transistor and corresponding field effect transistor
10/02/2003WO2003081674A1 Field effect transistor
10/02/2003WO2003081672A1 Magnetic memory device and manufacturing method thereof
10/02/2003WO2003081667A1 Semiconductor device and production method therefor
10/02/2003WO2003081660A1 Integrated circuit device and method therefor
10/02/2003WO2003081642A2 Power semiconductor device
10/02/2003WO2003081640A2 Strained fin fets structure and method
10/02/2003WO2003081339A2 Patterning semiconductor layers using phase shifting and assist features
10/02/2003WO2003080796A2 Ordered biological nanostructures formed from chaperonin polypeptides
10/02/2003WO2003058684A3 High voltage power mosfet having a voltage sustaining region and diffusion from regions of oppositely doped polysilicon
10/02/2003WO2003043092A3 Ohmic contact structure and method for the production of the same
10/02/2003WO2003040338A3 Micro-scale interconnect device with internal heat spreader and method for fabricating same
10/02/2003WO2003030267A3 Umosfet device and method of making the same
10/02/2003WO2003019664A3 Non-volatile semiconductor memory
10/02/2003WO2003015181B1 Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
10/02/2003WO2003010827A3 Trench-gate semiconductor devices, and their manufacture
10/02/2003WO2003007061A3 A method of forming a reflective electrode and a liquid crystal display device
10/02/2003WO2002076880A3 Method for producing micromechanic sensors and sensors produced by said method
10/02/2003US20030186562 Method for manufacturing semiconductor device employing solid phase diffusion
10/02/2003US20030186559 Method of manufacturing a compound semiconductor by heating a layered structure including rare earth transition metal
10/02/2003US20030186556 Methods used in fabricating gates in integrated circuit device structures
10/02/2003US20030186523 Method for forming an improved metal silicide portion in a silicon-containing conductive region in an integrated circuit
10/02/2003US20030186516 Method for fabricating semiconductor device
10/02/2003US20030186509 Method of manufacturing semiconductor device
10/02/2003US20030186507 Field-effect-controllable semiconductor component and method for fabricating the component
10/02/2003US20030186505 Method of manufacturing semiconductor device
10/02/2003US20030186503 Method of making self-aligned shallow trench isolation
10/02/2003US20030186499 Structure for oxide/silicon nitride interface substructure improvements
10/02/2003US20030186490 Semiconductor circuit and method of fabricating the same
10/02/2003US20030186489 Semiconductor device and method for preparing the same
10/02/2003US20030186488 Method for manufacturing thin film transistor panel
10/02/2003US20030186482 Integrated sensor packages and methods of making the same
10/02/2003US20030186480 Method for manufacturing thin-film structure
10/02/2003US20030186478 Thin film transistor array, fabrication method thereof, and liquid crystal display device employing the same
10/02/2003US20030186466 Passivation layer for molecular electronic device fabrication
10/02/2003US20030186173 Forming a high melting-point metal on an SOI (Silicon-on-Insulator) layer; transforming a layer of the high melting-point metal into a metal silicide layer by heat treatment; forming an interlayer insulating film; dry etching
10/02/2003US20030186074 Metal electrode using molybdenum-tungsten alloy as barrier layers and the fabrication method of the same
10/02/2003US20030186022 Charge-giving body, and pattern-formed body using the same
10/02/2003US20030185980 Supplying a compound containing at least one kind of metal element onto a substrate, irradiating substrate with energy particles in order to introduce metal element into substrates
10/02/2003US20030185073 Nonvolatile memory cells having split gate structure and methods of fabricating the same
10/02/2003US20030185071 Nonvolatile semiconductor memory device and method of manufacturing same
10/02/2003US20030185069 Semiconductor memory and method for applying voltage to semiconductor memory device
10/02/2003US20030185055 Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the same
10/02/2003US20030185054 File storage type non-volatile semiconductor memory device
10/02/2003US20030185053 Fast program to program verify method
10/02/2003US20030185052 Method and apparatus of a read scheme for non-volatile memory
10/02/2003US20030184707 Process for producing reflection type liquid crystal display device
10/02/2003US20030184704 Display device and method of manufacturing the same
10/02/2003US20030184699 In-plane switching mode liquid crystal display device
10/02/2003US20030184697 Substrate with a flattening film, display substrate, and method of manufacturing the substrates
10/02/2003US20030184507 Protection circuit for input and output of liquid crystal display
10/02/2003US20030184505 Display device
10/02/2003US20030184290 Magnetic sensor apparatus capable of directly producing digital sensor data from magnetic sensor element
10/02/2003US20030183953 Vertically staggered bondpad array
10/02/2003US20030183941 Semiconductor integrated circuit device and process for manufacturing the same
10/02/2003US20030183939 Semiconductor device with copper wirings
10/02/2003US20030183903 Semiconductor device
10/02/2003US20030183901 MOS transistor apparatus and method of manufacturing same
10/02/2003US20030183900 High-voltage diode and method for fabricating the high-voltage diode
10/02/2003US20030183899 Semiconductor component and method of manufacture
10/02/2003US20030183898 Semiconductor device and method for manufacturing the same
10/02/2003US20030183896 Epitaxially grown compound semiconductor film and compound semiconductor multi-layer structure
10/02/2003US20030183895 Semiconductor device and method of manufacturing the same
10/02/2003US20030183894 Light-receiving module
10/02/2003US20030183890 Device for sensing a magnetic field, magnetic field meter and an ammeter
10/02/2003US20030183886 Semiconductor device and method of fabricating the same
10/02/2003US20030183885 Field effect transistor and method of fabricating the same
10/02/2003US20030183883 Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration
10/02/2003US20030183882 UV-programmed P-type Mask ROM and fabrication thereof
10/02/2003US20030183881 Forming MOS transistors include forming lightly and heavily doped source/drain regions adjacent to one another in a substrate and a gate electrode with a sidewall spacer thereon. A salicide process is performed on a surface of the heavily
10/02/2003US20030183877 Semiconductor device and manufacturing method of semiconductor device
10/02/2003US20030183876 Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
10/02/2003US20030183875 Semiconductor device and semiconductor device production system
10/02/2003US20030183874 Semiconductor device
10/02/2003US20030183873 Nonvolatile semiconductor memory device and process of production and write method thereof
10/02/2003US20030183872 Semiconductor device and semiconductor memory using the same
10/02/2003US20030183871 Floating-gate analog circuit
10/02/2003US20030183870 Semiconductor memory device and manufacturing method thereof
10/02/2003US20030183869 Manufacturing process of an interpoly dielectric structure for non-volatile semiconductor integrated memories
10/02/2003US20030183868 Memory structures
10/02/2003US20030183866 Variable-capacitance capacitor
10/02/2003US20030183859 Single transistor rare earth manganite ferroelectric nonvolatile memory cell
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