Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2003
11/20/2003US20030213956 Active matrix type display device and method of manufacturing the same
11/20/2003US20030213951 Low-forward-voltage molecular rectifier
11/20/2003US20030213949 Epitaxial substrates and semiconductor devices
11/20/2003CA2485561A1 Method for producing a semiconductor component and semiconductor component produced by the same
11/20/2003CA2484739A1 Ultra small thin windows in floating gate transistors defined by lost nitride spacers
11/20/2003CA2484653A1 Method and apparatus for two dimensional assembly of particles
11/20/2003CA2483541A1 Adaptive processor architecture incorporating a field programmable gate array control element having at least one embedded microprocessor core
11/19/2003EP1363334A1 Gallium nitride-based compound semiconductor device with a ZnO electrode
11/19/2003EP1363333A1 Semiconductor device and its manufacturing method
11/19/2003EP1363332A1 Semiconductor device and method of manufacturing the same
11/19/2003EP1363331A2 Semiconductor switching circuit device and manufacturing method thereof
11/19/2003EP1363330A2 Fabrication of an integrated voltage sensing capacitor
11/19/2003EP1363167A2 Method of producing compound semiconductor device
11/19/2003EP1363122A1 Method for producing a hybrid organic silicon field effect transistor structure
11/19/2003EP1362376A1 Pulsed bistable bidirectional electronic switch
11/19/2003EP1362375A1 Flexible display device
11/19/2003EP1362374A2 Organic light emitting diode display having shield electrodes
11/19/2003EP1362332A1 Time-detection device and time- detection method by using a semi-conductor element
11/19/2003CN1457515A Solar cells incorporating light harvesting arrays
11/19/2003CN1457514A SOI LDMOS transistor structure having improved switching characteristics
11/19/2003CN1457511A Thin film transistors and method of manufacture
11/19/2003CN1457508A Method of forming insulating film and method of producing semiconductor device
11/19/2003CN1457503A Dry isotropic removal of inorganic anti-reflective coating after poly gate etching
11/19/2003CN1457451A Display and its manufacturing method
11/19/2003CN1457450A 显示器装置 Display device
11/19/2003CN1457220A Active matrix organic electrogenerated luminescent device and manufacturing method thereof
11/19/2003CN1457103A 薄膜晶体管及其制造方法 A thin film transistor and manufacturing method thereof
11/19/2003CN1457101A Dynamic memory
11/19/2003CN1457097A Bidirectional controllable thyristors for electrostatic discharge protection
11/19/2003CN1457096A Electrostatic discharging protection element
11/19/2003CN1457090A Method for manufacturing semiconductor component
11/19/2003CN1457086A Base electrode producing method
11/19/2003CN1456931A Electrooptical device and manufacturing method for semiconductor device
11/19/2003CN1456930A Liquid crystal display device for reducing row creep
11/19/2003CN1128473C Silicon complementary metal oxide semiconductor body contact on insulator formed by grating
11/19/2003CN1128450C Nonvolatile memory cell and method for programming method
11/18/2003US6650591 Nonvolatile semiconductor memory device
11/18/2003US6650567 Nonvolatile semiconductor memories with a NAND logic cell structure
11/18/2003US6650565 Semiconductor memory device
11/18/2003US6650379 Thin film transistor array panel
11/18/2003US6650171 Low power operation mechanism and method
11/18/2003US6650151 Process insensitive electronic driver circuitry for integrated RF switching diodes
11/18/2003US6650001 Lateral semiconductor device and vertical semiconductor device
11/18/2003US6649999 Semiconductor chip configuration with a layer sequence with functional elements contacted by contact pads
11/18/2003US6649995 Semiconductor device and method of manufacturing the same
11/18/2003US6649989 Micromechanical diaphragm
11/18/2003US6649988 Semiconductor pressure sensor decreasing creep stress in <110> crystalline axis direction
11/18/2003US6649985 Insulated-gate semiconductor device for a rectifier
11/18/2003US6649983 Bipolar device may have a significant relative gain and is constructed with no additional mask steps.
11/18/2003US6649981 High breakdown voltage semiconductor device
11/18/2003US6649980 Semiconductor device with MOS transistors sharing electrode
11/18/2003US6649979 Method of manufacturing MOSFET and structure thereof
11/18/2003US6649977 Silicon on insulator self-aligned transistors
11/18/2003US6649976 Semiconductor device having metal silicide film and manufacturing method thereof
11/18/2003US6649975 Vertical power devices having trench-based electrodes therein
11/18/2003US6649974 Field-effect controlled semiconductor device having a non-overlapping gate electrode and drift region and its manufacturing method
11/18/2003US6649973 Semiconductor device and method for manufacturing the same
11/18/2003US6649972 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
11/18/2003US6649971 Nitride read-only memory cell for improving second-bit effect and method for making thereof
11/18/2003US6649969 Nonvolatile semiconductor device
11/18/2003US6649967 Non-volatile memory device with a floating gate having a tapered protrusion
11/18/2003US6649966 Quantum dot of single electron memory device and method for fabricating thereof
11/18/2003US6649965 Semiconductor device and method of manufacturing the same
11/18/2003US6649964 Body-to-substrate contact structure for SOI device and method for fabricating same
11/18/2003US6649963 Ferroelectric memory cell for VLSI RAM
11/18/2003US6649959 Method for increasing a very-large-scale-integrated (VLSI) capacitor size on bulk silicon and silicon-on-insulator (SOI) wafers and structure formed thereby
11/18/2003US6649958 Semiconductor device with MIS capacitors sharing dielectric film
11/18/2003US6649957 Thin film polycrystalline memory structure
11/18/2003US6649953 Magnetic random access memory having a transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell
11/18/2003US6649950 Active pixel having reduced dark current in a CMOS image sensor
11/18/2003US6649944 Diode with lower power density in a silicon-on-insulator CMOS process for ESD protection
11/18/2003US6649936 Thin-film transistor substrate and liquid crystal display
11/18/2003US6649935 Self-aligned, planarized thin-film transistors, devices employing the same
11/18/2003US6649934 Thin film transistor array panel for a liquid crystal display and methods for manufacturing the same
11/18/2003US6649933 Method of manufacturing thin film transistor liquid crystal display
11/18/2003US6649928 Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby
11/18/2003US6649823 Generating vibrationally highly excited reaction products and converting product energy directly into useful forms, such as electricity, hot electrons in metal surface, long lived carriers in semiconductor, radiation or coherent radiation
11/18/2003US6649543 Methods of forming silicon nitride, methods of forming transistor devices, and transistor devices
11/18/2003US6649542 Multi-level type nonvolatile semiconductor memory device
11/18/2003US6649539 Semiconductor contact fabrication method
11/18/2003US6649538 Method for plasma treating and plasma nitriding gate oxides
11/18/2003US6649518 Method of forming a conductive contact
11/18/2003US6649503 Methods of fabricating integrated circuit devices having spin on glass (SOG) insulating layers and integrated circuit devices fabricated thereby
11/18/2003US6649500 Semiconductor device including an insulated gate field effect transistor and method of manufacturing the same
11/18/2003US6649498 Metal film protection of the surface of a structure formed on a semiconductor substrate during etching of the substrate by a KOH etchant
11/18/2003US6649492 Strained Si based layer made by UHV-CVD, and devices therein
11/18/2003US6649482 Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor
11/18/2003US6649481 Methods of fabricating a semiconductor device structure for manufacturing high-density and high-performance integrated-circuits
11/18/2003US6649480 Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
11/18/2003US6649479 Method for fabricating MOSFET device
11/18/2003US6649478 Semiconductor device and method of manufacturing same
11/18/2003US6649477 Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
11/18/2003US6649475 Method of forming twin-spacer gate flash device and the structure of the same
11/18/2003US6649470 Dual floating gate programmable read only memory cell structure and method for its fabrication and operation
11/18/2003US6649462 Semiconductor device and method of manufacturing the same including T-shaped gate
11/18/2003US6649460 Fabricating a substantially self-aligned MOSFET
11/18/2003US6649459 Method for manufacturing a semiconductor component
11/18/2003US6649458 Method for manufacturing semiconductor device with hetero junction bipolar transistor
11/18/2003US6649457 Method for SOI device isolation
11/18/2003US6649455 SOI type MOS element and manufacturing method thereof
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