Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2003
12/18/2003US20030230774 Vertical access transistor with curved channel
12/18/2003US20030230773 Ferroelectric capacitor, process for manufacturing thereof and ferroelectric memory
12/18/2003US20030230772 Field effect transistor
12/18/2003US20030230767 Compensation semiconductor component
12/18/2003US20030230766 MOS transistor and switching power supply
12/18/2003US20030230765 Light emitting diode light source
12/18/2003US20030230764 Display device
12/18/2003US20030230762 Transistor with group III/VI emitter
12/18/2003US20030230760 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
12/18/2003US20030230759 80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio
12/18/2003US20030230754 Contacting scheme for large and small area semiconductor light emitting flip chip devices
12/18/2003US20030230750 Display device and electronic device using the same
12/18/2003US20030230749 Semiconductor device and semiconductor device producing system
12/18/2003US20030230748 Structure of TFT planar display panel and process for manufacturing the same
12/18/2003US20030230143 Monolithic silicon acceleration sensor
12/18/2003US20030229981 Method of manufacturing of a monolithic silicon acceleration sensor
12/18/2003CA2484791A1 Method for the production of a hetero-bipolar transistor, and hetero-bipolar transistor
12/17/2003EP1372197A1 Power device with variable parameters
12/17/2003EP1372196A1 Method for driving a power diode and circuit to implement this method
12/17/2003EP1372194A1 Method for fabricating shaped blocks
12/17/2003EP1372189A1 Oxide film forming method
12/17/2003EP1372160A1 Dielectric constant enhancement of HfO2 comprising compositions
12/17/2003EP1371993A2 Acceleration sensor and manufacturing method for the same
12/17/2003EP1371098A1 A modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit
12/17/2003EP1371097A1 Structure for protection against radio disturbances
12/17/2003EP1371089A1 Fabrication method of soi semiconductor devices
12/17/2003EP1371088A2 Metal gate stack with etch stop layer improved through implantation of metallic atoms
12/17/2003EP1371063A2 Passivation layer for molecular electronic device fabrication
12/17/2003EP1370619A1 Solutions and dispersions of organic semiconductors
12/17/2003CN1462484A Patterning method
12/17/2003CN1462482A Method for manufacturing thin-film structure
12/17/2003CN1462481A Thin film transistor and active matrix type display unit and production method thereof
12/17/2003CN1462480A Electronic device including thin film transistor
12/17/2003CN1462479A Semiconductor device and its manufacturing method
12/17/2003CN1462478A Non-volatile memory cell array and method of forming
12/17/2003CN1462473A Thin film transistor self-aligned to light-shield layer
12/17/2003CN1462472A Method of manufacturing film transistor
12/17/2003CN1462059A Semiconductor film device and its manufacturing method and image displaying device
12/17/2003CN1462036A Magnetroresistive direct access storage device and its manufacturing method
12/17/2003CN1131567C Semiconductor device
12/17/2003CN1131566C Electrostatic discharging protector for polysilicon diode
12/17/2003CN1131565C Subscriber interface protection circuit
12/16/2003US6665858 Manufacturing method of semiconductor device
12/16/2003US6665374 Active matrix substrate, method of manufacturing same, and flat-panel image sensor
12/16/2003US6665045 Liquid crystal display panel and method of manufacturing the same
12/16/2003US6664806 Memory address and decode circuits with ultra thin body transistors
12/16/2003US6664640 Semiconductor device
12/16/2003US6664624 Semiconductor device and manufacturing method thereof
12/16/2003US6664612 Semiconductor component having double passivating layers formed of two passivating layers of different dielectric materials
12/16/2003US6664610 Bipolar transistor and the method of manufacturing the same
12/16/2003US6664609 Stray capacity between the first emitter wiring and the second emitter wiring can be reduced
12/16/2003US6664607 Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof
12/16/2003US6664604 Metal gate stack with etch stop layer
12/16/2003US6664601 Method of orperating a dual mode FET & logic circuit having negative differential resistance mode
12/16/2003US6664600 Graded LDD implant process for sub-half-micron MOS devices
12/16/2003US6664599 ESD protection device
12/16/2003US6664598 Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
12/16/2003US6664596 Stacked LDD high frequency LDMOSFET
12/16/2003US6664595 Power MOSFET having low on-resistance and high ruggedness
12/16/2003US6664594 Power MOS device with asymmetrical channel structure for enhanced linear operation capability
12/16/2003US6664593 Field effect transistor structure and method of manufacture
12/16/2003US6664592 A step of forming a source/drain region, which involves a high temperature treatment, is carried out prior to burying the gate insulator
12/16/2003US6664591 Insulated gate semiconductor device
12/16/2003US6664590 Circuit configuration for load-relieved switching
12/16/2003US6664588 NROM cell with self-aligned programming and erasure areas
12/16/2003US6664587 EEPROM cell array structure with specific floating gate shape
12/16/2003US6664586 Memory device and manufacturing method thereof
12/16/2003US6664582 Fin memory cell and method of fabrication
12/16/2003US6664577 Semiconductor device includes gate insulating film having a high dielectric constant
12/16/2003US6664576 Polymer thin-film transistor with contact etch stops
12/16/2003US6664575 GaInP stacked layer structure and field-effect transistor manufactured using the same
12/16/2003US6664574 Heterojunction semiconductor device and method of manufacturing
12/16/2003US6664569 Liquid crystal display device array substrate and method of manufacturing the same
12/16/2003US6664567 Photoelectric conversion device, glass composition for coating silicon, and insulating coating in contact with silicon
12/16/2003US6664562 Device integrated antenna for use in resonant and non-resonant modes and method
12/16/2003US6664559 Supermolecular structures and devices made from same
12/16/2003US6664195 Method for forming damascene metal gate
12/16/2003US6664186 Method of film deposition, and fabrication of structures
12/16/2003US6664169 Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
12/16/2003US6664165 Semiconductor device and fabrication method therefor
12/16/2003US6664164 UV-programmed P-type Mask ROM and fabrication thereof
12/16/2003US6664163 Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same
12/16/2003US6664161 Method and structure for salicide trench capacitor plate electrode
12/16/2003US6664160 Gate structure with high K dielectric
12/16/2003US6664156 Method for forming L-shaped spacers with precise width control
12/16/2003US6664155 Method of manufacturing semiconductor device with memory area and logic circuit area
12/16/2003US6664154 Method of using amorphous carbon film as a sacrificial layer in replacement gate integration processes
12/16/2003US6664153 Method to fabricate a single gate with dual work-functions
12/16/2003US6664152 Method for crystallizing silicon film and thin film transistor and fabricating method using the same
12/16/2003US6664151 Method for manufacturing a thin film transistor using steam anneal process to reinforce the surface of the ONO layer
12/16/2003US6664150 Active well schemes for SOI technology
12/16/2003US6664147 Method of forming thin film transistors on predominantly <100> polycrystalline silicon films
12/16/2003US6664145 Semiconductor device and manufacturing method thereof
12/16/2003US6664144 Method of forming a semiconductor device using a group XV element for gettering by means of infrared light
12/16/2003US6664143 Methods of fabricating vertical field effect transistors by conformal channel layer deposition on sidewalls
12/16/2003US6664129 Integrated circuits and methods for their fabrication
12/16/2003US6664116 Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides
12/16/2003US6664115 Metal insulator structure with polarization-compatible buffer layer
12/16/2003US6664103 Chemically assembled nano-scale circuit elements
12/16/2003US6663797 Two crossed wires sandwiching an electrically addressable molecular species
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