Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2003
12/23/2003US6667778 Liquid crystal display device having a transparent conductive film formed on an insulating film
12/23/2003US6667545 Rectifier diode with improved means for tension relief of the connected headwire
12/23/2003US6667539 Method to increase the tuning voltage range of MOS varactors
12/23/2003US6667538 Semiconductor device having semiconductor resistance element and fabrication method thereof
12/23/2003US6667526 Tunneling magnetoresistive storage unit
12/23/2003US6667525 Semiconductor device having hetero grain stack gate
12/23/2003US6667522 Silicon wafers for CMOS and other integrated circuits
12/23/2003US6667521 Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit
12/23/2003US6667517 Electrooptical device and electronic device
12/23/2003US6667516 RF LDMOS on partial SOI substrate
12/23/2003US6667515 High breakdown voltage semiconductor device
12/23/2003US6667514 Semiconductor component with a charge compensation structure and associated fabrication
12/23/2003US6667513 Semiconductor device with compensated threshold voltage and method for making same
12/23/2003US6667512 Asymmetric retrograde halo metal-oxide-semiconductor field-effect transistor (MOSFET)
12/23/2003US6667510 Self-aligned split-gate flash memory cell and its contactless memory array
12/23/2003US6667509 Method of forming sharp beak of poly by oxygen/fluorine implant to improve erase speed for split-gate flash
12/23/2003US6667508 Nonvolatile memory having a split gate
12/23/2003US6667507 Flash memory having memory section and peripheral circuit section
12/23/2003US6667506 Variable capacitor with programmability
12/23/2003US6667504 Self-aligned buried strap process using doped HDP oxide
12/23/2003US6667503 Semiconductor trench capacitor
12/23/2003US6667502 Structurally-stabilized capacitors and method of making of same
12/23/2003US6667501 Nonvolatile memory and method for driving nonvolatile memory
12/23/2003US6667499 Solid-state image sensing device and method of manufacturing the same
12/23/2003US6667498 Nitride semiconductor stack and its semiconductor device
12/23/2003US6667497 LED package
12/23/2003US6667495 Silicon carbide having first and second dopes
12/23/2003US6667494 Semiconductor device and semiconductor display device
12/23/2003US6667492 Quantum ridges and tips
12/23/2003US6667491 Semiconductor device
12/23/2003US6667489 Heterojunction bipolar transistor and method for production thereof
12/23/2003US6667251 Plasma nitridation for reduced leakage gate dielectric layers
12/23/2003US6667246 Wet-etching method and method for manufacturing semiconductor device
12/23/2003US6667232 Thin dielectric layers and non-thermal formation thereof
12/23/2003US6667227 Trenched gate metal oxide semiconductor device and method
12/23/2003US6667216 Semiconductor device and method of fabricating the same
12/23/2003US6667215 Method of making transistors
12/23/2003US6667214 Non-volatile semiconductor memory devices and methods for manufacturing the same
12/23/2003US6667213 Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
12/23/2003US6667211 Non-volatile semiconductor memory device and method of manufacturing the same
12/23/2003US6667207 High-dielectric constant insulators for FEOL capacitors
12/23/2003US6667204 Semiconductor device and method of forming the same
12/23/2003US6667203 Method of fabricating a MOS capacitor
12/23/2003US6667202 Semiconductor device and method for making the same
12/23/2003US6667201 Method for manufacturing flash memory cell
12/23/2003US6667200 Method for forming transistor of semiconductor device
12/23/2003US6667199 Semiconductor device having a replacement gate type field effect transistor and its manufacturing method
12/23/2003US6667198 Method and photo mask for manufacturing an array substrate
12/23/2003US6667188 Thin film transistor and method for fabricating same
12/23/2003US6667102 Microelectronics
12/23/2003US6666481 Shunt connection to emitter
12/23/2003CA2340059C Micromechanical sensor and method for producing same
12/18/2003WO2003105238A1 Polycrystalline thin-film solar cells
12/18/2003WO2003105236A1 Display unit and production method therefor, and projection type display unit
12/18/2003WO2003105235A1 Semiconductor device including insulated-gate field-effect transistor and its manufacturing method
12/18/2003WO2003105234A1 Semiconductor device and semiconductor device manufacturing method
12/18/2003WO2003105233A1 Elevated source and drain elements for strained-channel heteroju nction field-effect transistors
12/18/2003WO2003105232A1 Dopen region in an soi substrate
12/18/2003WO2003105231A1 Method for producing nrom-memory cells with trench transistors
12/18/2003WO2003105212A1 Double side igbt phase leg architecture and clocking method for reduced turn on loss
12/18/2003WO2003105211A1 Method for producing a hetero-bipolar transistor and hetero-bipolar-transistor
12/18/2003WO2003105206A1 Growing source and drain elements by selecive epitaxy
12/18/2003WO2003105205A1 Hafnium-aluminum oxide dielectric films
12/18/2003WO2003105204A2 Semiconductor devices having strained dual channel layers
12/18/2003WO2003105189A2 Strained-semiconductor-on-insulator device structures
12/18/2003WO2003104784A1 A cantilever sensor with a current shield and a method for its production
12/18/2003WO2003079413A3 High k dielectric film and method for making
12/18/2003WO2003079405A3 Method for forming thin film layers by simultaneous doping and sintering
12/18/2003WO2003058682A3 A METHOD FOR FORMING A POWER SEMICONDUCTOR AS IN FIGURE 5 HAVING A SUBSTRATE (2), A VOLTAGE SUSTAINING EPITAXIAL LAYER (1) WITH AT LEAST A TRENCH (52), A DOPED REGION (5a) ADJACENT AND SURROUNDING THE TRENCH.
12/18/2003WO2002082602A3 Semiconductor laser with reduced temperature sensitivity
12/18/2003US20030233193 Simulation method and apparatus, and computer-readable storage medium
12/18/2003US20030232491 Semiconductor device fabrication method
12/18/2003US20030232478 Method of manufacturing a hetero-junction bipolar transistor
12/18/2003US20030232477 High-voltage semiconductor component
12/18/2003US20030232476 Method for fabricating a semiconductor component having at least one transistor cell and an edge cell
12/18/2003US20030232475 Method of fabricating LDMOS semiconductor devices
12/18/2003US20030232470 Integrated semiconductor memory and fabrication method
12/18/2003US20030232468 Semiconductor device and a method for fabricating the device
12/18/2003US20030232466 Diffusion barrier layer in semiconductor substrates to reduce copper contamination from the back side
12/18/2003US20030232459 Manufacturing method for electro-optical device, electro-optical device, manufacturing method for semiconductor device,semiconductor device, projection-type display apparatus, and electronic apparatus
12/18/2003US20030232457 Method for fabricating a nitride semiconductor device
12/18/2003US20030232456 Thin film transistors of a thin film transistor liquid crystal display and method for fabricating the same
12/18/2003US20030232453 Conductive thin film, a capacitor using the same and a method of manufacturing thereof
12/18/2003US20030231842 Device for optical and/or electrical data transmission and/or processing
12/18/2003US20030231521 Semiconductor memory device and semiconductor device
12/18/2003US20030230811 Integrated circuit devices including raised source/drain structures having different heights and methods of forming same
12/18/2003US20030230789 Base for a NPN bipolar transistor
12/18/2003US20030230788 Semiconductor device
12/18/2003US20030230787 Reducing fuse programming time for non-volatile storage of data
12/18/2003US20030230786 Excellent electrical characteristics of MOS transistor devices by efficiently preventing a junction short circuit between sources and drains in a bulk area even if channel distance between sources and drains is reduced due to high integration
12/18/2003US20030230785 Semiconductor device having silicon oxide film
12/18/2003US20030230784 Semiconductor device and method for fabricating the same
12/18/2003US20030230783 Integrated memory circuit and method of forming an integrated memory circuit
12/18/2003US20030230782 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
12/18/2003US20030230780 Fully silicided NMOS device for electrostatic discharge protection
12/18/2003US20030230779 Semiconductor device and method for manufacturing the same
12/18/2003US20030230778 SOI structure having a SiGe Layer interposed between the silicon and the insulator
12/18/2003US20030230777 MOSFET and a method for manufacturing the same
12/18/2003US20030230776 System on chip
12/18/2003US20030230775 Split-gate flash memory structure and method of manufacture
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