Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2003
12/25/2003US20030235992 Method for manufacturing electric capacitance type acceleration sensor
12/25/2003US20030235990 Method of forming a nanometer-gate mosfet device
12/25/2003US20030235987 Method for fabricating semiconductor device
12/25/2003US20030235974 Advanced RF enhancement-mode FETs with improved gate properties
12/25/2003US20030235971 Manufacturing method for a semiconductor device
12/25/2003US20030235970 Method for growing layers of group iii - nitride semiconductor having electrically passivated threading defects
12/25/2003US20030235967 Multi-bit memory unit and fabrication method thereof
12/25/2003US20030235965 Method for manufacturing a MOS transistor
12/25/2003US20030235962 Method of manufacturing a semiconductor integrated circuit device
12/25/2003US20030235961 Cyclical sequential deposition of multicomponent films
12/25/2003US20030235959 Self-aligned differential oxidation in trenches by ion implantation
12/25/2003US20030235958 Thicker oxide formation at the trench bottom by selective oxide deposition
12/25/2003US20030235957 Method and structure for graded gate oxides on vertical and non-planar surfaces
12/25/2003US20030235954 Method for fabricating floating gate
12/25/2003US20030235953 Semiconductor device and method of manufacturing the same
12/25/2003US20030235952 Method for manufacturing non-volatile memory device
12/25/2003US20030235951 Manufacturing method for semiconductor storage device
12/25/2003US20030235949 Memory device with reduced cell size
12/25/2003US20030235943 Notched damascene planar poly/metal gate and methods thereof
12/25/2003US20030235942 Semiconductor device
12/25/2003US20030235936 Schottky barrier CMOS device and method
12/25/2003US20030235934 Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths
12/25/2003US20030235932 Integrated driver process flow
12/25/2003US20030235931 Ge photodetectors
12/25/2003US20030235710 Semiconductor device comprising substrate having first layer of dielectric material, second layer of amorphous silicon, amorphous germanium or alloys thereof, and third layer; second layer provides adhesion between first and third layers
12/25/2003US20030235095 Semiconductor memory device with an improved memory cell structure and method of operating the same
12/25/2003US20030235085 Write once read only memory employing charge trapping in insulators
12/25/2003US20030235082 Single-poly EEPROM
12/25/2003US20030235079 Nor flash memory cell with high storage density
12/25/2003US20030235078 Deep wordline trench to shield cross coupling between adjacent cells for scaled nand
12/25/2003US20030235076 Multistate NROM having a storage density much greater than 1 Bit per 1F2
12/25/2003US20030235075 Vertical NROM having a storage density of 1bit per 1F2
12/25/2003US20030235067 Ferroelectric non-volatile memory device, and driving method thereof
12/25/2003US20030235064 Method of forming a non-volatile electron storage memory and the resulting device
12/25/2003US20030234971 Electro-optical device and electronic apparatus
12/25/2003US20030234899 Electro-optical device and electronic apparatus
12/25/2003US20030234452 Optical integrated circuit element package and process for making the same
12/25/2003US20030234439 SiGe gate electrodes on SiGe subtrates and methods of making the same
12/25/2003US20030234431 Led package
12/25/2003US20030234429 Hall effect device with multiple layers
12/25/2003US20030234424 Pixel thin film transistor (n-channel type TFT) in which an off current value is sufficiently low and the ratio of an on current value to the off current value is high
12/25/2003US20030234423 Trench fill process
12/25/2003US20030234422 Methods of fabricating a dielectric plug in mosfets to suppress short-channel effects
12/25/2003US20030234421 Structure of discrete nrom cell
12/25/2003US20030234420 Write once read only memory with large work function floating gates
12/25/2003US20030234419 Method for fabricating a memory structure having required scale spacers
12/25/2003US20030234418 Memory structure having required scale spacers
12/25/2003US20030234410 Solid-state image pick-up device
12/25/2003US20030234407 Nanotube permeable base transistor
12/25/2003US20030234405 Silicon controlled rectifier structure with guard ring controlled circuit
12/25/2003US20030234400 Semiconductor device, semiconductor layer and production method thereof
12/25/2003US20030234399 Thin film transistor array panel
12/25/2003US20030234398 Device, method of manufacturing device, electro-optic device, and electronic equipment
12/25/2003US20030234397 Semiconductor memory cell and semiconductor memory device
12/25/2003US20030234395 Semiconductor device and method of manufacturing the same
12/24/2003WO2003107661A1 Solid-state imaging device, method for driving solid-state imaging device, imaging method, and imager
12/24/2003WO2003107453A2 Material for a functional layer of an organic electronic component, method for the production thereof, and use thereof
12/24/2003WO2003107434A1 A method of forming a metal pattern and a method of fabricating tft array panel by using the same
12/24/2003WO2003107433A1 Field-effect transistor
12/24/2003WO2003107432A1 Power semiconductor device and method of manufacturing the same
12/24/2003WO2003107431A1 Semiconductor device having schottky junction electrode
12/24/2003WO2003107430A1 Enhanced structure and method for buried local interconnects
12/24/2003WO2003107429A1 Semiconductor device and method for fabricating the same
12/24/2003WO2003107428A1 Semiconductor device and method for fabricating the same
12/24/2003WO2003107422A1 Semiconductor device and its manufacturing method
12/24/2003WO2003107416A1 Method for the production of an nrom memory cell arrangement
12/24/2003WO2003107405A1 Method for producing a spacer structure
12/24/2003WO2003107016A1 Monolithic silicon acceleration sensor
12/24/2003WO2003107014A2 Method of manufacturing of a monolithic silicon acceleration sensor
12/24/2003WO2003106955A1 Sensor and method for producing a sensor
12/24/2003WO2003106326A2 Micro-electro-mechanical system (mems) variable capacitor apparatuses and related methods
12/24/2003WO2003092041A3 Method for fabricating a soi substrate a high resistivity support substrate
12/24/2003WO2003085743B1 Structure and method for an emitter ballast resistor in an hbt
12/24/2003WO2003083919A3 Method of manufacturing nanowires and electronic device
12/24/2003WO2003081833A3 Floating-gate analog circuit
12/24/2003WO2003054942A3 Method of introducing nitrogen into semiconductor dielectric layers
12/24/2003WO2003031687B1 Corrosion-proof pressure transducer
12/24/2003WO2003024865A8 Method for producing micro-electromechanical components
12/24/2003WO2002073695A3 Thyristor configuration and surge suppressor comprising a thyristor configuration of this type
12/24/2003CN1463466A Conductive thin film for semiconductor device, semiconductor device and methods for producing them
12/24/2003CN1463383A Active plate
12/24/2003CN1463382A Active matrix display substrate
12/24/2003CN1463045A Semiconductor device and its mfg. method
12/24/2003CN1462901A Active array base plate of LCD device and its manufacturing method
12/24/2003CN1462900A Active array base plate of LCD device and its manufacturing method
12/24/2003CN1132312C Method for turn-on regulation of IGBT and appts. for carrying out same
12/24/2003CN1132251C Solid state imaging device and mfg. method thereof
12/24/2003CN1132250C EEPROM device and mfg. method thereof
12/24/2003CN1132249C Static random memory unit and its mfg. method
12/24/2003CN1132241C Mfg. method of semiconductor element, driver circuit and active matrix display device
12/24/2003CN1132238C 半导体元件及其制造方法 Semiconductor device and manufacturing method
12/24/2003CN1132234C 通过采用光滑底电极结构具有改进的存储保持的薄膜铁电电容器 By using a smooth bottom electrode structure having improved storage holding film ferroelectric capacitor
12/24/2003CN1132226C 用于高频集成电路的衬底 Substrate for high-frequency integrated circuits
12/24/2003CN1132225C 通过受控退火制造碳化硅功率器件的方法 The method of producing a silicon carbide power devices by controlled annealing
12/24/2003CN1132222C Semiconductor mfg. tech. and semiconductor device mfg. tech
12/24/2003CN1132016C 用于单电子和核的自旋测量的电子设备 An electronic device for a single-electron and nuclear spin measured
12/23/2003US6668238 Pressure sensor
12/23/2003US6667909 Method of erasing a FAMOS memory cell and a corresponding memory cell
12/23/2003US6667907 Semiconductor memory and method for applying voltage to semiconductor memory device
12/23/2003US6667904 Multi-level non-volatile semiconductor memory device with verify voltages having a smart temperature coefficient