Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2003
12/31/2003WO2004001811A2 A method for improving hole mobility enhancement in strained silicon p-type mosfet
12/31/2003WO2004001808A2 Method and system for atomic layer removal and atomic layer exchange
12/31/2003WO2004001802A2 Nrom memory cell, memory array, related devices and methods
12/31/2003WO2004001801A2 Insulated-gate semiconductor device and approach involving junction-induced intermediate region
12/31/2003WO2004001798A2 A silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide
12/31/2003WO2004001358A1 High-pressure sensor comprising silicon membrane and solder layer
12/31/2003WO2004000972A1 An etchant for a wiring, a method for manufacturing the wiring using the etchant, a thin film transistor array panel including the wiring, and a method for manufacturing the same
12/31/2003WO2004000003A2 Controlled alignment of catalytically grown nanostructures in a large-scale synthesis process
12/31/2003WO2003075361A3 Monolithic integrated soi circuit with capacitor
12/31/2003WO2003073565A3 Long wavelength vcsel comprising a tunnel junction with carbon doped gaassb
12/31/2003WO2003073477A3 Tiered structure having a multi-layered resist stack
12/31/2003WO2003073468A3 Silicon carbide bipolar junction transistor with overgrown base region
12/31/2003WO2003056630A3 Transistor
12/31/2003WO2003050849A3 High power-low noise microwave gan heterojunction field effet transistor
12/31/2003WO2003046974A3 Capacitor and a method for producing a capacitor
12/31/2003WO2002086905A3 Ferroelectric memory and operating method therefor
12/31/2003WO2002047168A3 Cmos inverter circuits utilizing strained silicon surface channel mosfets
12/31/2003CN1465100A Organic electroluminescent device and a method of manufacturing thereof
12/31/2003CN1465094A Reactor having a movable shutter
12/31/2003CN1465093A Method of producing semiconductor thin film, method of producing semiconductor device, semiconductor device, integrated circuit, electrooptical device and electronic apparatus
12/31/2003CN1465092A Thin film semiconductor device and its production method
12/31/2003CN1465091A Pod load interface equipment adapted for implementation in a fims system
12/31/2003CN1465072A Steering gate and bit line segmentation in non-volatile memories
12/31/2003CN1464565A Silicon controlled rectifier having protective ring control circuit
12/31/2003CN1464564A GaAs based composite collecting region trajectory transmitting heterojunction bipolar transistor
12/31/2003CN1464563A Composite quantum point device and a process for making it
12/31/2003CN1133213C Flash memory unit with high coupling ratio and its manufacture
12/31/2003CA2489827A1 Nanotube permeable base transistor and method of making same
12/31/2003CA2489567A1 Ge photodetectors
12/31/2003CA2485614A1 System for digitizing transient signals
12/30/2003US6671710 Methods of computing with digital multistate phase change materials
12/30/2003US6671152 Power MOS transistor with overtemperature protection circuit
12/30/2003US6671010 Array substrate for LCD device and method of fabricating the same
12/30/2003US6670711 Semiconductor device including low dielectric constant insulating film formed on upper and side surfaces of the gate electrode
12/30/2003US6670705 Protective layer for a semiconductor device
12/30/2003US6670694 Semiconductor device
12/30/2003US6670692 Semiconductor chip with partially embedded decoupling capacitors
12/30/2003US6670688 Semiconductor device including at least one schottky metal layer surrounding PN junction
12/30/2003US6670687 Semiconductor device having silicon carbide layer of predetermined conductivity type and module device having the same
12/30/2003US6670685 Method of manufacturing and structure of semiconductor device with floating ring structure
12/30/2003US6670683 Composite transistor having a slew-rate control
12/30/2003US6670680 Semiconductor device comprising a dual gate CMOS
12/30/2003US6670679 Semiconductor device having an ESD protective circuit
12/30/2003US6670677 SOI substrate having an etch stop layer and an SOI integrated circuit fabricated thereon
12/30/2003US6670675 Simplified but effective structure which does not require additional circuitry; conserves space
12/30/2003US6670673 Semiconductor device and method for manufacturing semiconductor device
12/30/2003US6670672 Structure of discrete NROM cell
12/30/2003US6670671 Nonvolatile semiconductor memory device and manufacturing method thereof
12/30/2003US6670670 Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same
12/30/2003US6670669 Multiple-bit non-volatile memory utilizing non-conductive charge trapping gate
12/30/2003US6670667 Asymmetric gates for high density DRAM
12/30/2003US6670666 Nonvolatile semiconductor memory device and manufacturing method thereof
12/30/2003US6670661 Ferroelectric memory cell with diode structure to protect the ferroelectric during read operations
12/30/2003US6670658 Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same
12/30/2003US6670655 SOI CMOS device with body to gate connection
12/30/2003US6670654 Silicon germanium heterojunction bipolar transistor with carbon incorporation
12/30/2003US6670653 InP collector InGaAsSb base DHBT device and method of forming same
12/30/2003US6670652 Monolithically integrated E/D mode HEMT and method for fabricating the same
12/30/2003US6670651 Metal sulfide-oxide semiconductor transistor devices
12/30/2003US6670650 Power semiconductor rectifier with ring-shaped trenches
12/30/2003US6670649 Triodic rectifier switch
12/30/2003US6670642 Semiconductor memory device using vertical-channel transistors
12/30/2003US6670641 Thin film transistor, method of manufacturing the same and thin film transistor liquid crystal display device
12/30/2003US6670638 Liquid crystal display element and method of manufacturing the same
12/30/2003US6670637 Electronic device
12/30/2003US6670636 Substrate device, method of manufacturing the same, and electro-optical device
12/30/2003US6670635 Semiconductor device and semiconductor display device
12/30/2003US6670631 Low-forward-voltage molecular rectifier
12/30/2003US6670542 Semiconductor device and manufacturing method thereof
12/30/2003US6670289 High-pressure anneal process for integrated circuits
12/30/2003US6670277 Method of manufacturing semiconductor device
12/30/2003US6670263 Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size
12/30/2003US6670262 Method of manufacturing semiconductor device
12/30/2003US6670260 Transistor with local insulator structure
12/30/2003US6670253 Fabrication method for punch-through defect resistant semiconductor memory device
12/30/2003US6670252 Method of manufacturing semiconductor device
12/30/2003US6670250 MOS transistor and method for forming the same
12/30/2003US6670248 Triple gate oxide process with high-k gate dielectric
12/30/2003US6670246 Method for forming a vertical nitride read-only memory
12/30/2003US6670244 Method for fabricating a body region for a vertical MOS transistor arrangement having a reduced on resistivity
12/30/2003US6670243 Method of making a flash memory device with an inverted tapered floating gate
12/30/2003US6670242 Method for making an integrated circuit device including a graded, grown, high quality gate oxide layer and a nitride layer
12/30/2003US6670240 Twin NAND device structure, array operations and fabrication method
12/30/2003US6670236 Semiconductor device having capacitance element and method of producing the same
12/30/2003US6670231 Method of forming a dielectric layer in a semiconductor device
12/30/2003US6670230 CMOS process for double vertical channel thin film transistor
12/30/2003US6670229 Bipolar transistor produced using processes compatible with those employed in the manufacture of MOS device
12/30/2003US6670228 Method of fabricating a polysilicon capacitor utilizing FET and bipolar base polysilicon layers
12/30/2003US6670225 Method of manufacturing a semiconductor device
12/30/2003US6670224 Method for manufacturing thin film transistors
12/30/2003US6670212 Micro-machining
12/30/2003US6670211 Semiconductor laser device
12/30/2003US6670104 Pattern forming method and method of manufacturing thin film transistor
12/30/2003US6669825 Modifying dielectric overcoating on substrate
12/30/2003US6668614 Capacitive type physical quantity detecting sensor for detecting physical quantity along plural axes
12/30/2003CA2207020C Excitation of polysilicon-based pressure sensors
12/25/2003WO2003107399A2 Method for improving nitrogen profile in plasma nitrided gate dielectric layers
12/25/2003US20030236738 Replicated derivatives having demand-based, adjustable returns, and trading exchange therefor
12/25/2003US20030236001 Fabrication process of a semiconductor device
12/25/2003US20030236000 Method of making nanotube permeable base transistor
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