| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/08/2004 | US20040004234 Semiconductor device with a disposable gate and method of manufacturing the same |
| 01/08/2004 | US20040004233 Semiconductor circuit configuration and associated fabrication method |
| 01/08/2004 | US20040004230 Back-biasing to populate strained layer quantum wells |
| 01/08/2004 | US20040004222 Polysilicon thin film transistor used in a liquid crystal display and the fabricating method |
| 01/08/2004 | US20040004221 Electro-optical device |
| 01/08/2004 | US20040004220 Thin film transistor |
| 01/08/2004 | US20040004219 Polycrystalline silicon thin film used in a thin film transistor and a device using the same |
| 01/08/2004 | US20040004218 Transistor circuit |
| 01/08/2004 | DE19630341B4 Halbleitereinrichtung mit hoher Durchbruchsspannung A semiconductor device with high breakdown voltage |
| 01/08/2004 | DE19531618B4 Bipolartransistor, Halbleitereinrichtung mit einem Bipolartransistor und Verfahren zum Herstellen derselben Bipolar transistor semiconductor device having a bipolar transistor and method for manufacturing the same |
| 01/08/2004 | DE10326771A1 Integrierte Speicherschaltung und Verfahren zum Bilden einer integrierten Speicherschaltung An integrated circuit memory and method of forming an integrated circuit memory |
| 01/08/2004 | DE10324491A1 Herstellungsverfahren für Dual-Workfunction-Logikbauelemente in vertikalen DRAM-Prozessen Manufacturing method for dual workfunction logic components in vertical DRAM processes |
| 01/08/2004 | DE10323400A1 Löschschema für eine Flashspeicherzelle unter Verwendung sowohl des Source- als auch des Kanalbereichs Erase scheme for a flash memory cell using both the source and the channel region |
| 01/08/2004 | DE10320598A1 Transistor und Verfahren zur Herstellung eines Transistors mit der Ausbildung einer flachen Implantierung unter Verwendung einer Epitaxieschicht Transistor and method of manufacturing a transistor with the formation of a shallow implantation using an epitaxial layer |
| 01/08/2004 | DE10307125A1 Dotiertes organisches Halbleitermaterial sowie Verfahren zu dessen Herstellung Doped organic semiconductor material, and methods for its preparation |
| 01/08/2004 | DE10252818A1 Halbleitervorrichtung mit Kondensator A semiconductor device having capacitor |
| 01/08/2004 | DE10245769A1 Nichtflüchtige Speicherzelle mit Ladungseinfangstruktur, Speicherbauelement und Herstellungsverfahren A non-volatile memory cell having charge trapping memory device and manufacturing method |
| 01/08/2004 | DE10228000A1 Vorrichtung zur Druckmessung A device for pressure measurement |
| 01/08/2004 | DE10227544A1 Vorrichtung zur optischen und/oder elektrischen Datenübertragung und/oder -verarbeitung An apparatus for optical and / or electrical data transmission and / or processing |
| 01/08/2004 | DE10226965A1 Integrierter Halbleiterspeicher und Herstellungsverfahren Integrated semiconductor memory and manufacturing processes |
| 01/08/2004 | DE10226964A1 Verfahren zur Herstellung einer NROM-Speicherzellenanordnung Process for the preparation of an NROM memory cell array |
| 01/08/2004 | DE10226914A1 Verfahren zur Herstellung einer Spacerstruktur A method for producing a spacer structure |
| 01/08/2004 | DE10226665A1 Bidirektionaler Halbleiterschalter Bidirectional semiconductor switch |
| 01/08/2004 | DE10226664A1 Kompensations-Halbleiterbauelement Compensation semiconductor component |
| 01/08/2004 | DE10226660A1 Flächenoptimierte Arrayanordnung für DRAM-Speicherzellen Optimised surface array arrangement for DRAM memory cells |
| 01/08/2004 | DE10226583A1 DRAM-Speicherzelle für schnellen Schreib-/Lesezugriff DRAM memory cell for fast read / write access |
| 01/08/2004 | DE10225410A1 Verfahren zur Herstellung von NROM-Speicherzellen mit Grabentransistoren Process for the preparation of NROM memory cells having transistors grave |
| 01/08/2004 | DE10224956A1 Verfahren zur Einstellung der Einsatzspannung eines Feldeffekttansistors, Feldeffekttransistor sowie integrierte Schaltung Method for adjusting the threshold voltage of a Feldeffekttansistors, field effect transistor and integrated circuit |
| 01/08/2004 | DE10220584B3 Dynamische Speicherzelle und Verfahren zum Herstellen derselben Dynamic memory cell and method for manufacturing the same |
| 01/07/2004 | EP1378945A2 Semiconductor device for electrostatic discharge protection comprising a thyristor |
| 01/07/2004 | EP1378943A1 Semiconductor device and its manufacturing method |
| 01/07/2004 | EP1378788A2 Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device |
| 01/07/2004 | EP1378017A1 Heterostructure component |
| 01/07/2004 | EP1378015A1 Method and apparatus for providing a high-performance active matrix pixel using organic thin-film transistors |
| 01/07/2004 | EP1378012A2 Gallium nitride material devices including backside vias and methods of fabrication |
| 01/07/2004 | EP1378009A2 Field-effect transistor structure and method of manufacture |
| 01/07/2004 | EP1378006A2 Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment |
| 01/07/2004 | EP1377439A2 Chemical monolayer and micro-electronic junctions and devices containing same |
| 01/07/2004 | EP0990159B1 Suspension arrangement for semiconductor accelerometer |
| 01/07/2004 | CN1466780A Pressure sensor and method for manufcturing pressure sensor |
| 01/07/2004 | CN1466779A Semiconductor device and its manufacturing method |
| 01/07/2004 | CN1466775A Electrode structure, and method for manufacturing thin-film structure |
| 01/07/2004 | CN1466773A Substrate and method for producing same, and thin film structure |
| 01/07/2004 | CN1466226A EFT with neck shape channel and mfg. method thereof |
| 01/07/2004 | CN1466225A Double carrier transistor and making method thereof |
| 01/07/2004 | CN1466222A Semiconductor device with capacitor |
| 01/07/2004 | CN1466221A Non-volatile memory cell and fabrication method thereof |
| 01/07/2004 | CN1466214A Carbon nano tube type integrated EFI and preparation process thereof |
| 01/07/2004 | CN1466177A Method for making metal semiconductor transistor |
| 01/07/2004 | CN1466175A EFT structure with elongation strain channel layer and mfg. method thereof |
| 01/07/2004 | CN1466009A LCD board |
| 01/07/2004 | CN1465755A Method for crystallizing amorphous silicon using nanoparticles |
| 01/07/2004 | CN1134070C 半导体器件 Semiconductor devices |
| 01/07/2004 | CN1134069C Improved TFT, method of making it and matrix displays incorporating TFT |
| 01/07/2004 | CN1134068C Semiconductor device and manufacturing methods thereof |
| 01/07/2004 | CN1134059C Method for manufacturing semiconductor integrated circuit |
| 01/07/2004 | CN1134054C Nonvolatile semiconductor memory and fabricating method |
| 01/07/2004 | CN1134046C Method for manufacturing semiconductor device |
| 01/07/2004 | CN1133889C Active matrix baseboard, photo-electric apparatus and method for producing active matrix base board |
| 01/06/2004 | US6674777 Protective side wall passivation for VCSEL chips |
| 01/06/2004 | US6674667 Programmable fuse and antifuse and method therefor |
| 01/06/2004 | US6674622 Dynamic floating SCR (semiconductor-controlled-rectifier) ESD protection |
| 01/06/2004 | US6674502 Thin film transistors; a surface treated with an oxygen plasma and a nitrogen plasma-treated layer formed over said surface; molybdenum nitride |
| 01/06/2004 | US6674499 Active matrix liquid crystal display apparatus |
| 01/06/2004 | US6674469 Driving method for solid-state image pickup device |
| 01/06/2004 | US6674152 Bipolar diode |
| 01/06/2004 | US6674150 Heterojunction bipolar transistor and method for fabricating the same |
| 01/06/2004 | US6674149 Bipolar transistor device having phosphorous |
| 01/06/2004 | US6674148 Lateral components in power semiconductor devices |
| 01/06/2004 | US6674147 Semiconductor device having a bipolar transistor structure |
| 01/06/2004 | US6674145 Flash memory circuitry |
| 01/06/2004 | US6674139 Inverse T-gate structure using damascene processing |
| 01/06/2004 | US6674138 Use of high-k dielectric materials in modified ONO structure for semiconductor devices |
| 01/06/2004 | US6674137 Semiconductor device and its manufacturing method |
| 01/06/2004 | US6674136 Semiconductor device having driver circuit and pixel section provided over same substrate |
| 01/06/2004 | US6674135 Semiconductor structure having elevated salicided source/drain regions and metal gate electrode on nitride/oxide dielectric |
| 01/06/2004 | US6674133 Twin bit cell flash memory device |
| 01/06/2004 | US6674131 Requiring a high breakdown voltage and a large current |
| 01/06/2004 | US6674130 High performance PD SOI tunneling-biased MOSFET |
| 01/06/2004 | US6674129 ESD diode structure |
| 01/06/2004 | US6674127 Semiconductor integrated circuit |
| 01/06/2004 | US6674126 Semiconductor device |
| 01/06/2004 | US6674125 Semiconductor power component and a corresponding manufacturing method |
| 01/06/2004 | US6674124 Trench MOSFET having low gate charge |
| 01/06/2004 | US6674123 MOS control diode and method for manufacturing the same |
| 01/06/2004 | US6674122 Semiconductor integrated circuit |
| 01/06/2004 | US6674121 Method and system for molecular charge storage field effect transistor |
| 01/06/2004 | US6674120 Nonvolatile semiconductor memory device and method of operation thereof |
| 01/06/2004 | US6674119 Non-volatile semiconductor memory device and semiconductor integrated circuit |
| 01/06/2004 | US6674117 Semiconductor element and semiconductor memory device using the same |
| 01/06/2004 | US6674116 Variable capacitor using MOS gated diode with multiple segments to limit DC current |
| 01/06/2004 | US6674115 Multiple layer phrase-change memory |
| 01/06/2004 | US6674110 Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric |
| 01/06/2004 | US6674109 Nonvolatile memory |
| 01/06/2004 | US6674108 Gate length control for semiconductor chip design |
| 01/06/2004 | US6674106 Liquid crystal display and an organic electroluminescent display; pixels disposed in a matrix on a transparent base plate |
| 01/06/2004 | US6674104 Bipolar transistor |
| 01/06/2004 | US6674103 HBT with nitrogen-containing current blocking base collector interface and method for current blocking |
| 01/06/2004 | US6674102 Sti pull-down to control SiGe facet growth |
| 01/06/2004 | US6674101 GaN-based semiconductor device |