| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/13/2004 | US6677639 Non-volatile memory device and method for fabricating the same |
| 01/13/2004 | US6677638 Nonvolatile memory device and method for fabricating the same |
| 01/13/2004 | US6677633 Semiconductor device |
| 01/13/2004 | US6677629 Electric or electronic component and application as non volatile memory and device with surface acoustic waves |
| 01/13/2004 | US6677626 High inverse voltage of a super- junction semiconductor device, a driftlayer, an n-type high resistance region, and a low resistance region |
| 01/13/2004 | US6677625 Bipolar transistor |
| 01/13/2004 | US6677624 Carbon nanotubes transistor |
| 01/13/2004 | US6677622 Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure |
| 01/13/2004 | US6677616 Fabrication method of thin film transistor substrate for X-ray detector |
| 01/13/2004 | US6677613 Semiconductor device and method of fabricating the same |
| 01/13/2004 | US6677611 Thin film circuit |
| 01/13/2004 | US6677609 Thin film transistor, manufacturing method thereof, and circuit and liquid crystal display device using the thin film transistor |
| 01/13/2004 | US6677607 Organic semiconductor device having an oxide layer |
| 01/13/2004 | US6677606 Dopa and dopamine modification of metal oxide semiconductors, method for attaching biological molecules to semiconductors |
| 01/13/2004 | US6677234 Method of selectively forming silicide |
| 01/13/2004 | US6677230 Method of manufacturing semiconductor device |
| 01/13/2004 | US6677222 Method of manufacturing semiconductor device with polysilicon film |
| 01/13/2004 | US6677221 Semiconductor device and the fabricating method therefor |
| 01/13/2004 | US6677215 Method of fabricating a diode protecting a gate electrode of a field effect transistor |
| 01/13/2004 | US6677213 SONOS structure including a deuterated oxide-silicon interface and method for making the same |
| 01/13/2004 | US6677212 Elevated source/drain field effect transistor and method for making the same |
| 01/13/2004 | US6677210 High voltage transistors with graded extension |
| 01/13/2004 | US6677208 Transistor with bottomwall/sidewall junction capacitance reduction region and method |
| 01/13/2004 | US6677207 Vanishingly small integrated circuit diode |
| 01/13/2004 | US6677204 Multigate semiconductor device with vertical channel current and method of fabrication |
| 01/13/2004 | US6677203 Method of manufacturing a semiconductor memory device which reduces the minimum area requirements of the device |
| 01/13/2004 | US6677202 Power MOS device with increased channel width and process for forming same |
| 01/13/2004 | US6677201 Method of fabricating thermal CVD oxynitride and BTBAS nitride sidewall spacer for metal oxide semiconductor transistors |
| 01/13/2004 | US6677200 Method of forming non-volatile memory having floating trap type device |
| 01/13/2004 | US6677198 Structure of a low-voltage channel write/erase flash memory cell and fabricating method thereof |
| 01/13/2004 | US6677196 Semiconductor memory device and method of fabricating the same |
| 01/13/2004 | US6677193 Method of producing semiconductor device and its structure |
| 01/13/2004 | US6677192 Method of fabricating a relaxed silicon germanium platform having planarizing for high speed CMOS electronics and high speed analog circuits |
| 01/13/2004 | US6677191 Method of producing a top-gate thin film transistor |
| 01/13/2004 | US6677190 Self-aligned body contact in a semiconductor device |
| 01/13/2004 | US6677189 Method for forming polysilicon thin film transistor with a self-aligned LDD structure |
| 01/13/2004 | US6677183 Method of separation of semiconductor device |
| 01/13/2004 | US6677182 Technique for suppression of edge current in semiconductor devices |
| 01/13/2004 | US6677177 Solid state image sensor and method for manufacturing the same |
| 01/13/2004 | US6677176 Method of manufacturing an integrated electronic microphone having a floating gate electrode |
| 01/13/2004 | US6676857 Mono-, oligo- and poly-4-fluorothiophenes and their use as charge transport materials |
| 01/08/2004 | WO2004004022A1 Reduction in the contact resistance in organic field effect transistors with palladium contacts by the use of nitriles and isonitriles |
| 01/08/2004 | WO2004004015A2 Soi field effect transistor element having a recombination region and method of forming same |
| 01/08/2004 | WO2004004014A1 Semiconductor device and its manufacturing method |
| 01/08/2004 | WO2004004013A1 Lateral semiconductor device |
| 01/08/2004 | WO2004004011A1 Method for the production of a semiconductor structure comprising a plurality of gate stacks on a semiconductor substrate, and corresponding semiconductor structure |
| 01/08/2004 | WO2004004007A2 Overvoltage protection |
| 01/08/2004 | WO2004003997A2 Silicon-on-insulator wafer for integrated circuit |
| 01/08/2004 | WO2004003979A2 Method for the production of a nrom memory cell field |
| 01/08/2004 | WO2004003972A2 Transistor and sensors made from molecular materials with electric dipoles |
| 01/08/2004 | WO2004003970A2 A semiconductor device and method of fabricating a semiconductor device |
| 01/08/2004 | WO2004003763A1 High speed differential pre-driver using common mode pre-charge |
| 01/08/2004 | WO2004003535A1 Planar nanowire based sensor elements, devices, systems and methods for using and making same |
| 01/08/2004 | WO2003041169A3 Thermally balanced power transistor |
| 01/08/2004 | WO2002071449A3 COMPLEMENTARY ACCUMULATION-MODE JFET INTEGRATED CIRCUIT TOPOLOGY USING WIDE (> 2eV) BANDGAP SEMICONDUCTORS |
| 01/08/2004 | WO2002013235A3 Power mos device with asymmetrical channel structure |
| 01/08/2004 | US20040005763 Method of manufacturing low-leakage, high-performance device |
| 01/08/2004 | US20040005762 Vertical transistor, and a method for producing a vertical transistor |
| 01/08/2004 | US20040005761 Method for manufacturing non-volatile memory device |
| 01/08/2004 | US20040005760 Programmable memory devices comprising tungsten, and methods of forming programmable memory devices comprising tungsten |
| 01/08/2004 | US20040005759 Structure and manufacturing method of non-volatile semiconductor memory device |
| 01/08/2004 | US20040005751 Method for fabricating CMOS transistor of a semiconductor device |
| 01/08/2004 | US20040005749 Methods of forming dual gate semiconductor devices having a metal nitride layer |
| 01/08/2004 | US20040005748 Methods of forming a gate insulating layer in an integrated circuit device in which the gate insulating layer is nitrified and then annealed to cure defects caused by the nitridation process |
| 01/08/2004 | US20040005747 Thin-film semiconductor device, manufacturing method of the same and image display apparatus |
| 01/08/2004 | US20040005744 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, thin film transistor, and display |
| 01/08/2004 | US20040005743 Method of manufacturing thin film transistor |
| 01/08/2004 | US20040005741 Active matrix substrate, electrooptical device, and method of producing active matrix substrate |
| 01/08/2004 | US20040005740 Strained-semiconductor-on-insulator device structures |
| 01/08/2004 | US20040005739 Method of manufacturing device, device, and electronic apparatus |
| 01/08/2004 | US20040005408 Method of forming a dielectric film |
| 01/08/2004 | US20040005112 Electronic device having a diffusion barrier region including aluminum and a method of manufacture therefor |
| 01/08/2004 | US20040004982 Nanocrystal structures |
| 01/08/2004 | US20040004891 DRAM memory cell and memory cell array with fast read/write access |
| 01/08/2004 | US20040004879 Semiconductor integrated circuit device |
| 01/08/2004 | US20040004863 Nonvolatile electrically alterable memory device and array made thereby |
| 01/08/2004 | US20040004861 Differential EEPROM using pFET floating gate transistors |
| 01/08/2004 | US20040004859 Memory utilizing oxide nanolaminates |
| 01/08/2004 | US20040004678 Method of manufacturing device, device, and electronic apparatus |
| 01/08/2004 | US20040004496 Field programmable gate array with convertibility to application specific integrated circuit |
| 01/08/2004 | US20040004271 Improved heat radiation; either the ratio of one Si isotope or the ratio of one Ge isotope is set higher, whereby the heat can be scattered in the direction horizontal to the substrate plane. |
| 01/08/2004 | US20040004270 Germanium implanted HBT bipolar |
| 01/08/2004 | US20040004265 Flash memory devices having self aligned shallow trench isolation structures and methods of fabricating the same |
| 01/08/2004 | US20040004264 Semiconductor device and method of manufacturing the same |
| 01/08/2004 | US20040004263 MOS power transistor |
| 01/08/2004 | US20040004262 Semiconductor devices in compensated semiconductor |
| 01/08/2004 | US20040004261 Magneto-resistive devices |
| 01/08/2004 | US20040004258 Semiconductor device |
| 01/08/2004 | US20040004251 Insulated-gate field-effect thin film transistors |
| 01/08/2004 | US20040004250 Semiconductor device and method of fabricating the same |
| 01/08/2004 | US20040004249 High-voltage semiconductor component |
| 01/08/2004 | US20040004248 Semiconductor device and method for fabricating the same |
| 01/08/2004 | US20040004247 Memory utilizing oxide-nitride nanolaminates |
| 01/08/2004 | US20040004245 Memory utilizing oxide-conductor nanolaminates |
| 01/08/2004 | US20040004244 Structures, methods, and systems for ferroelectric memory transistors |
| 01/08/2004 | US20040004243 Programmable memory devices comprising tungsten |
| 01/08/2004 | US20040004242 Semiconductor device and method for fabricating the same |
| 01/08/2004 | US20040004239 Three dimensional integrated circuits |
| 01/08/2004 | US20040004238 Termination structure for mosgated power devices |
| 01/08/2004 | US20040004235 Formation position of nanotubes can be precisely controlled. |