Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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12/23/1993 | WO1993026042A1 Method of manufacturing cmos semiconductor components with local interconnects |
12/23/1993 | WO1993026041A1 Bonded wafer processing |
12/23/1993 | WO1993026040A1 Method and device for stacking substrates which are to be joined by bonding |
12/23/1993 | WO1993026039A1 Using a nanochannel glass mask to form semiconductor devices |
12/23/1993 | WO1993026038A1 Semiconductor wafer processing method and apparatus with heat and gas flow control |
12/23/1993 | WO1993026037A1 Process for forming synapses in neural networks and resistor therefor |
12/23/1993 | WO1993026036A1 Process for producing a quantum wire________________________ |
12/23/1993 | WO1993026035A1 Centrifugal wafer carrier cleaning apparatus |
12/23/1993 | WO1993025893A1 Endpoint detection technique using signal slope determinations |
12/23/1993 | WO1993025878A1 Thermal isolation microstructure |
12/23/1993 | WO1993025724A1 Semiconductor wafer processing cvd reactor cleaning method and apparatus |
12/23/1993 | WO1993025723A1 Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten cvd |
12/23/1993 | WO1993025722A1 Methods of chemical vapor deposition (cvd) of films on patterned wafer substrates |
12/23/1993 | WO1993025721A1 Method of nucleating tungsten on titanium nitride by cvd without silane |
12/23/1993 | WO1993025347A1 Wafer polishing method and apparatus |
12/23/1993 | WO1993021365A3 Method for making a discontinuity lattice at the surface of a crystalline substrate |
12/23/1993 | DE4320313A1 Built=in test photodetector structure in CCD image sensor - is inserted into row of imaging detectors and provided with separate exposure control gate to corresp. exposure drain regions. |
12/23/1993 | DE4320060A1 Semiconductor memory cell capacitor prodn. - involves forming multilayer cylindrical storage electrode |
12/23/1993 | DE4320033A1 Metal pattern prodn. in semiconductor device mfr. - using anti-reflection film to avoid photoresist pattern recesses |
12/23/1993 | DE4319788A1 Single crystal growth process for prodn. of silicon single crystal with constant dopant concn. - by melting material in crucible with added impurities, maintaining solid layer and melting from upper portion while drawing |
12/23/1993 | DE4302396A1 Thin film solar cell prodn. for high reliability - using frangible anisotropic layer for thin semiconductor film transfer from prodn. to support substrate e.g of glass, for high quality solar cell mfr. |
12/23/1993 | DE4300806C1 Vertical MOS transistor prodn. - with reduced trench spacing, without parasitic bipolar effects |
12/23/1993 | DE4220158A1 Selective precipitation of aluminium structures from the gas phase - using locally applied thin aluminium@ layers as catalysts in the pptn. process |
12/23/1993 | DE4219935A1 Field effect transistor mfr., e.g. for MESFET or HEMT prodn. - applying mask on gate region active semiconductor layer and forming ohmic contact in second step between semiconductor layer and metallising material |
12/23/1993 | CA2137567A1 Methods of chemical vapor deposition (cvd) of films on patterned wafer substrates |
12/23/1993 | CA2136863A1 Semiconductor wafer processing method and apparatus with heat and gas flow control |
12/23/1993 | CA2136862A1 Method of nucleating tungsten on titanium nitride by cvd without silane |
12/23/1993 | CA2136861A1 Semiconductor wafer processing cvd reactor cleaning method and apparatus |
12/22/1993 | EP0575283A2 Advanced silicon on oxide semiconductor device structure for BICMOS integrated circuits |
12/22/1993 | EP0575282A2 Vertical-base CMOS compatible lateral bipolar transistor |
12/22/1993 | EP0575280A2 CMOS transistor with two-layer inverse-T tungsten gate structure |
12/22/1993 | EP0575278A2 Vertical gate transistor with low temperature epitaxial channel |
12/22/1993 | EP0575247A1 Method of manufacturing a bipolar heterojunction transistor and transistor obtained by this method |
12/22/1993 | EP0575194A1 Semiconductor device having capacitor |
12/22/1993 | EP0575126A1 Plasma reactor head and electrode assembly |
12/22/1993 | EP0575125A1 Method and apparatus for wet chemical processing of semiconductor wafers and other objects |
12/22/1993 | EP0575099A1 Method for making a MOS device |
12/22/1993 | EP0575098A1 Downstream ammonia plasma passivation of GaAs |
12/22/1993 | EP0575062A1 ESD protection of output buffers |
12/22/1993 | EP0574956A1 Metallized circuit substrate comprising nitride type ceramics |
12/22/1993 | EP0574947A1 Light emitting device |
12/22/1993 | EP0574939A1 Resist composition |
12/22/1993 | EP0574935A1 Apparatus made of silica for semiconductor device fabrication |
12/22/1993 | EP0574934A1 Method for forming a patterned polyimide coating film on a substrate |
12/22/1993 | EP0574911A2 Semiconductor device for driving heat generator |
12/22/1993 | EP0574893A2 Method of printed circuit panel manufacture |
12/22/1993 | EP0574861A1 System for continuous fabrication of micro-structures and thin film semiconductor devices on elongate substrates |
12/22/1993 | EP0574859A1 Method of removing particles in a plasma processing chamber |
12/22/1993 | EP0574827A1 Method of doping, semiconductor device, and method of fabricating semiconductor device |
12/22/1993 | EP0574809A1 Organic chlorides, showing a reduced effect upon the destruction of the ozone layer, for use during silicon thermal oxidation and furnace tube cleaning |
12/22/1993 | EP0574797A2 Pressure glass passing-through |
12/22/1993 | EP0574687A2 Method of depositing a planar layer containing aluminium on a substrate with a hole structure in its surface |
12/22/1993 | EP0574671A2 An asymmetric multilayered dielectric material and a flash EEPROM using the same |
12/22/1993 | EP0574662A2 Insulated semiconductor package |
12/22/1993 | EP0554396A4 Rapid-curing adhesive formulation for semiconductor devices |
12/22/1993 | EP0362275B1 Fabrication of a semiconductor base material |
12/22/1993 | CN1079827A Photoenhanced diffusion patterning for organic polymer films |
12/22/1993 | CN1079826A 液晶显示器件 Liquid crystal display device |
12/22/1993 | CN1023266C Redundant means of semiconductor memory device and method thereof |
12/21/1993 | USRE34484 Gold-plated electronic components |
12/21/1993 | US5272744 Reflection mask |
12/21/1993 | US5272671 Semiconductor memory device with redundancy structure and process of repairing same |
12/21/1993 | US5272666 Programmable semiconductor antifuse structure and method of fabricating |
12/21/1993 | US5272645 Channel routing method |
12/21/1993 | US5272586 Technique for improving ESD immunity |
12/21/1993 | US5272502 Double-surface concurrent exposure device |
12/21/1993 | US5272419 Flat visible display device and method of forming a picture |
12/21/1993 | US5272417 Device for plasma process |
12/21/1993 | US5272388 High-yield methods for programming antifuses |
12/21/1993 | US5272373 Internal gettering of oxygen in III-V compound semiconductors |
12/21/1993 | US5272372 High speed non-volatile programmable read only memory device fabricated by using selective doping technology |
12/21/1993 | US5272371 Electrostatic discharge protection structure |
12/21/1993 | US5272368 Complementary low power non-volatile reconfigurable EEcell |
12/21/1993 | US5272367 Fabrication of complementary n-channel and p-channel circuits (ICs) useful in the manufacture of dynamic random access memories (drams) |
12/21/1993 | US5272366 Bipolar transistor/insulated gate transistor hybrid semiconductor device |
12/21/1993 | US5272365 Silicon transistor device with silicon-germanium electron gas hetero structure channel |
12/21/1993 | US5272360 Thin film transistor having enhance stability in electrical characteristics |
12/21/1993 | US5272357 Semiconductor device and electronic device by use of the semiconductor |
12/21/1993 | US5272342 Diffused layer depth measurement apparatus |
12/21/1993 | US5272310 Soldering method |
12/21/1993 | US5272307 Method and apparatus for laser soldering of microelectronic lead-pad assemblies on ceramic substrates |
12/21/1993 | US5272171 Phosphonooxy and carbonate derivatives of taxol |
12/21/1993 | US5272119 Process for contamination removal and minority carrier lifetime improvement in silicon |
12/21/1993 | US5272117 Method for planarizing a layer of material |
12/21/1993 | US5272116 Method for pattern defect correction of a photomask |
12/21/1993 | US5272115 Method of leveling the laminated surface of a semiconductor substrate |
12/21/1993 | US5272114 Method for cleaving a semiconductor crystal body |
12/21/1993 | US5272113 Method for minimizing stress between semiconductor chips having a coefficient of thermal expansion different from that of a mounting substrate |
12/21/1993 | US5272111 Method for manufacturing semiconductor device contact |
12/21/1993 | US5272110 Method of forming wirings |
12/21/1993 | US5272107 Manufacture of silicon carbide (SiC) metal oxide semiconductor (MOS) device |
12/21/1993 | US5272106 Method for the making of an optoelectronic device |
12/21/1993 | US5272105 Method of manufacturing an heteroepitaxial semiconductor structure |
12/21/1993 | US5272104 Bonded wafer process incorporating diamond insulator |
12/21/1993 | US5272103 DRAM having a large dielectric breakdown voltage between an adjacent conductive layer and a capacitor electrode and method of manufacture thereof |
12/21/1993 | US5272102 Method of making semiconductor memory device and memory cells therefor |
12/21/1993 | US5272100 Field effect transistor with T-shaped gate electrode and manufacturing method therefor |
12/21/1993 | US5272099 Fabrication of transistor contacts |
12/21/1993 | US5272098 Vertical and lateral insulated-gate, field-effect transistors, systems and methods |
12/21/1993 | US5272097 Method for fabricating diodes for electrostatic discharge protection and voltage references |