Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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10/19/1993 | US5255234 Redundant means of a semiconductor memory device and method thereof |
10/19/1993 | US5255231 Architecture of realizing balance of bit line sense amplifier in DRAM cell array |
10/19/1993 | US5255230 Method and apparatus for testing the continuity of static random access memory cells |
10/19/1993 | US5255229 Dynamic random access memory including stress test circuitry |
10/19/1993 | US5255223 Semiconductor memory device having alternatively operated equalizing and erasing functions |
10/19/1993 | US5255219 Ultraviolet-erasable type nonvolatile semiconductor memory device having asymmetrical field oxide structure |
10/19/1993 | US5255157 Molded semiconductor package |
10/19/1993 | US5255153 Electrostatic chuck and plasma apparatus equipped therewith |
10/19/1993 | US5255146 Electrostatic discharge detection and clamp control circuit |
10/19/1993 | US5255099 Solid state pickup device with strap line in vertical register |
10/19/1993 | US5255089 Portable particle detector assembly |
10/19/1993 | US5255071 Photoreflectance method and apparatus utilizing acousto-optic modulation |
10/19/1993 | US5255070 Method for determining interface properties of semiconductor materials by photoreflectance |
10/19/1993 | US5255051 Small field scanner |
10/19/1993 | US5255050 Projection exposure method |
10/19/1993 | US5254874 High density local interconnect in a semiconductor circuit using metal silicide |
10/19/1993 | US5254873 Trench structure having a germanium silicate region |
10/19/1993 | US5254868 Solidstate image sensor device |
10/19/1993 | US5254867 Laminated insulating film; dielectric constants progresssively increasing; suppression of electric field intensity at lower corner of electrode |
10/19/1993 | US5254866 LDD CMOS with wider oxide sidewall on PMOS than NMOS |
10/19/1993 | US5254865 Semiconductor integrated circuit device employing MOSFETS |
10/19/1993 | US5254864 Semiconductor device |
10/19/1993 | US5254863 Semiconductor device such as a high electron mobility transistor |
10/19/1993 | US5254862 Diamond field-effect transistor with a particular boron distribution profile |
10/19/1993 | US5254833 Brittle material cleavage-cutting apparatus |
10/19/1993 | US5254830 System for removing material from semiconductor wafers using a contained plasma |
10/19/1993 | US5254811 Hybrid microchip bonding article |
10/19/1993 | US5254506 Method for the production of silicon oxynitride film where the nitrogen concentration at the wafer-oxynitride interface is 8 atomic precent or less |
10/19/1993 | US5254505 Process of forming capacitive insulating film |
10/19/1993 | US5254503 Process of making and using micro mask |
10/19/1993 | US5254501 Same-side gated process for encapsulating semiconductor devices |
10/19/1993 | US5254499 Injecting a gaseous titanium organometallic precursor, gaseous ammonia and a carrier gas over positioned, pre-heated wafer; reduces etch rate |
10/19/1993 | US5254498 Opening contact hole larger than intended size; forming oxidation layer until hole diameter reaches target size; etching; embedding metal |
10/19/1993 | US5254497 Spin-on-glass; free field inversion; illumination with ultraviolet radiation to neutralize charges in multilevel structure |
10/19/1993 | US5254496 Semiconductor mixed crystal quantum well device manufacture |
10/19/1993 | US5254495 Minimum lateral width diffusion and bird's beak encroachment |
10/19/1993 | US5254494 Method of manufacturing a semiconductor device having field oxide regions formed through oxidation |
10/19/1993 | US5254492 Method of fabricating an integrated circuit for providing low-noise and high-power microwave operation |
10/19/1993 | US5254491 Method of making a semiconductor device having improved frequency response |
10/19/1993 | US5254490 Forming, selective etching of refracotyr metal silicides and ) nitrides |
10/19/1993 | US5254489 Method of manufacturing semiconductor device by forming first and second oxide films by use of nitridation |
10/19/1993 | US5254488 Easily manufacturable thin film transistor structures |
10/19/1993 | US5254487 Method of manufacturing high and low voltage CMOS transistors on a single chip |
10/19/1993 | US5254486 Self-alignment of emitter and collector regions; no need to etch away oxide mask of base region due to previous patterning step |
10/19/1993 | US5254485 Prevents undesirable effect of native oxide film between substrate and electrode film |
10/19/1993 | US5254484 Method for recrystallization of preamorphized semiconductor surfaces zones |
10/19/1993 | US5254481 Polycrystalline solar cell manufacturing method |
10/19/1993 | US5254480 Process for producing a large area solid state radiation detector |
10/19/1993 | US5254419 Method for dust-proofing in the manufacture of electronic devices and pellicle therefor |
10/19/1993 | US5254417 Reflection mask and electrically charged beam exposing apparatus using the reflection mask |
10/19/1993 | US5254375 Apparatus for controllably separating framed working area from remainder of the membrane |
10/19/1993 | US5254370 Method for forming a silicon carbide film |
10/19/1993 | US5254319 Single crystal pulling apparatus |
10/19/1993 | US5254237 Plasma arc apparatus for producing diamond semiconductor devices |
10/19/1993 | US5254229 Electrified object neutralizing method and neutralizing device |
10/19/1993 | US5254218 Masking layer having narrow isolated spacings and the method for forming said masking layer and the method for forming narrow isolated trenches defined by said masking layer |
10/19/1993 | US5254217 Method for fabricating a semiconductor device having a conductive metal oxide |
10/19/1993 | US5254216 Oxygen scavenging in a plasma reactor |
10/19/1993 | US5254215 Using microwave activated gas |
10/19/1993 | US5254214 Etching corner edges of lands into taper shape with argon plasma |
10/19/1993 | US5254213 Method of forming contact windows |
10/19/1993 | US5254209 Method of making micromechanical components |
10/19/1993 | US5254208 Preheating glass substrate in hydrogen or carbon monoxide, forming amorphous semiconductor layer, heating to crystallize |
10/19/1993 | US5254207 Method of epitaxially growing semiconductor crystal using light as a detector |
10/19/1993 | US5254205 Wafer binding method and apparatus |
10/19/1993 | US5254201 Method of stripping off wafer-protective sheet |
10/19/1993 | US5254191 Method for reducing shrinkage during firing of ceramic bodies |
10/19/1993 | US5254176 Method of cleaning a process tube |
10/19/1993 | US5254172 Rotating furnace tube having a non-rotating slidable work holder for processing semiconductor substrates |
10/19/1993 | US5254171 Bias ECR plasma CVD apparatus comprising susceptor, clamp, and chamber wall heating and cooling means |
10/19/1993 | US5254170 Enhanced vertical thermal reactor system |
10/19/1993 | US5253755 Cushioned cover for disk container |
10/19/1993 | US5253663 Transfer apparatus |
10/19/1993 | US5253415 Method of making an integrated circuit substrate lead assembly |
10/19/1993 | US5253411 Method of securing semi-conductor wafer using retention clip |
10/19/1993 | CA2008024C Production process of single crystals |
10/19/1993 | CA1323410C Damping support structure |
10/14/1993 | WO1993020590A1 Metal-insulator-metal capacitor around via structure |
10/14/1993 | WO1993020587A1 Mos structure for reducing snapback |
10/14/1993 | WO1993020584A1 Process for producing a monocrystalline silicon layer on an embedded dielectric |
10/14/1993 | WO1993020583A1 METHOD AND STRUCTURE FOR SUPPRESSING CHARGE LOSS IN EEPROMs/EPROMs AND INSTABILITIES IN SRAM LOAD RESISTORS |
10/14/1993 | WO1993020582A1 Method of preparing semiconductor with good intrinsic gettering |
10/14/1993 | WO1993020581A1 Semiconductor optical devices and techniques |
10/14/1993 | WO1993020580A1 Device and method for handling objects |
10/14/1993 | WO1993020506A1 Semiconductor floor plan and method for a register renaming circuit |
10/14/1993 | WO1993020482A1 Method for forming a lithographic pattern in a process for manufacturing semiconductor devices |
10/14/1993 | WO1993019857A1 Layered chip structure |
10/14/1993 | DE4312084A1 HV power supply with voltage peak limiting network - coacts with two input lines, with capacitor coupled to one input line, and line between resistor and diode |
10/14/1993 | DE4311705A1 NOR or NAND type mask ROM - has two transistors of high and low threshold respectively, with two impurity atom regions and common impurity atom region, all of opposite conductivity to that of substrate |
10/14/1993 | DE4311484A1 Forming conducting structure on surface of substrate - comprises forming dielectric layer on substrate, forming conducting and protective layers, then removing parts of protective layer |
10/14/1993 | DE4311358A1 Flash EEPROM preventing excessive erasure - injects electrons into floating gate of memory cells during erasure and extracts electrons during programming to force cells to enhancement level determined by set voltage |
10/14/1993 | DE4309542A1 Semiconductor device with improved wire and contact resistance - comprising insulator with recesses and having patterned structure, and electrode intermediate connection |
10/14/1993 | DE4212231A1 Doping with amorphous silicon@ - by gas discharge with addn. of tri:methyl-phosphine to gas, used in prodn. of electrophotographic recording material |
10/14/1993 | DE4210900A1 Verfahren zur Herstellung eines haftfesten Verbundes zwischen Kupferschichten und Keramik A process for the preparation of a firmly adhesive bonding between the copper layers and ceramic |
10/14/1993 | CA2132747A1 Layered chip structure |
10/14/1993 | CA2132005A1 Method for improved lithographic patterning in a semiconductor fabrication process |
10/13/1993 | EP0565473A2 Mask structure and process to repair missing or unwanted phase-shifting elements |
10/13/1993 | EP0565461A2 Method of forming and aligning patterns in deposited overlayers on GaAs |
10/13/1993 | EP0565435A1 Complementary transistor semiconductor device |
10/13/1993 | EP0565414A1 Method of manufacturing heteroepitaxial thin films and electronic devices |